KR102328443B1 - 액체조성물 및 이것을 이용한 에칭방법 - Google Patents

액체조성물 및 이것을 이용한 에칭방법 Download PDF

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Publication number
KR102328443B1
KR102328443B1 KR1020150165660A KR20150165660A KR102328443B1 KR 102328443 B1 KR102328443 B1 KR 102328443B1 KR 1020150165660 A KR1020150165660 A KR 1020150165660A KR 20150165660 A KR20150165660 A KR 20150165660A KR 102328443 B1 KR102328443 B1 KR 102328443B1
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KR
South Korea
Prior art keywords
acid
liquid composition
copper
mass
etching
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KR1020150165660A
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English (en)
Korean (ko)
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KR20160064013A (ko
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히데노리 타케우치
쿠니오 유베
Original Assignee
미쯔비시 가스 케미칼 컴파니, 인코포레이티드
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Publication of KR20160064013A publication Critical patent/KR20160064013A/ko
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/18—Acidic compositions for etching copper or alloys thereof
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • ing And Chemical Polishing (AREA)
  • Weting (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Thin Film Transistor (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
KR1020150165660A 2014-11-27 2015-11-25 액체조성물 및 이것을 이용한 에칭방법 KR102328443B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2014-239524 2014-11-27
JP2014239524 2014-11-27

Publications (2)

Publication Number Publication Date
KR20160064013A KR20160064013A (ko) 2016-06-07
KR102328443B1 true KR102328443B1 (ko) 2021-11-18

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KR1020150165660A KR102328443B1 (ko) 2014-11-27 2015-11-25 액체조성물 및 이것을 이용한 에칭방법

Country Status (4)

Country Link
JP (1) JP6657770B2 (zh)
KR (1) KR102328443B1 (zh)
CN (2) CN115125536A (zh)
TW (1) TWI667373B (zh)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105803459B (zh) * 2016-05-03 2019-01-15 苏州晶瑞化学股份有限公司 一种微电子用多层金属膜蚀刻液及其应用
CN105970225B (zh) * 2016-07-01 2018-07-13 苏州博洋化学股份有限公司 一种铝蚀刻剂及其制备方法
JP6167444B1 (ja) * 2016-09-09 2017-07-26 パナソニックＩｐマネジメント株式会社 多層膜用エッチング液とエッチング濃縮液およびエッチング方法
JP7027323B2 (ja) * 2016-10-21 2022-03-01 株式会社Adeka エッチング液組成物及びエッチング方法
KR20180060489A (ko) 2016-11-29 2018-06-07 삼성전자주식회사 식각용 조성물 및 이를 이용한 반도체 장치 제조 방법
CN106498398A (zh) * 2016-12-01 2017-03-15 深圳市华星光电技术有限公司 用于铜/钼膜层的金属蚀刻液及其蚀刻方法
JP6850650B2 (ja) * 2017-03-27 2021-03-31 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
KR102527728B1 (ko) 2017-03-31 2023-04-28 간또 가가꾸 가부시끼가이샤 티타늄층 또는 티타늄 함유층의 에칭액 조성물 및 에칭 방법
US20190040316A1 (en) * 2017-08-04 2019-02-07 Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd. Etching solution of igzo film layer and etching method of the same
CN107978607B (zh) * 2017-11-21 2020-04-28 深圳市华星光电半导体显示技术有限公司 背沟道蚀刻型氧化物半导体tft基板的制作方法
JP6443649B1 (ja) * 2018-03-23 2018-12-26 パナソニックＩｐマネジメント株式会社 銅厚膜用エッチング液
CN111902569B (zh) * 2018-03-26 2022-03-29 三菱瓦斯化学株式会社 蚀刻液
TWI759450B (zh) * 2018-03-27 2022-04-01 日商三菱瓦斯化學股份有限公司 蝕刻液、蝕刻方法、及顯示裝置之製造方法
CN109112545A (zh) * 2018-09-25 2019-01-01 惠州市宙邦化工有限公司 一种铜钼合金膜的化学蚀刻用组合物
KR102562490B1 (ko) * 2018-10-29 2023-08-03 솔브레인 주식회사 식각액 조성물 및 이를 이용한 금속막 식각 방법
CN109576717A (zh) * 2018-11-29 2019-04-05 广东工业大学 一种坡莫合金丝表面退铜剂及其制备方法和应用
JP6485587B1 (ja) * 2018-12-25 2019-03-20 三菱瓦斯化学株式会社 エッチング液
CN110644001A (zh) * 2019-10-22 2020-01-03 湖北兴福电子材料有限公司 一种铜蚀刻液
CN114032548A (zh) * 2021-11-11 2022-02-11 河南慧泽生物工程有限公司 一种印刷电路板铜箔蚀刻液
CN114989826A (zh) * 2022-06-06 2022-09-02 江苏和达电子科技有限公司 一种用于金属层和半导体层形态控制的蚀刻液及其应用
CN116497355B (zh) * 2023-04-10 2024-03-22 珠海市裕洲环保科技有限公司 一种酸性铜蚀刻液及其应用

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4378270A (en) * 1981-10-29 1983-03-29 Learonal, Inc. Method of etching circuit boards and recovering copper from the spent etch solutions
DE102005038414A1 (de) * 2005-08-12 2007-02-15 Basf Aktiengesellschaft Stabilisierte Ätzlösungen zum Ätzen von Cu- und Cu/Ni-Schicht
US20100320457A1 (en) 2007-11-22 2010-12-23 Masahito Matsubara Etching solution composition
JP5403922B2 (ja) * 2008-02-26 2014-01-29 富士フイルム株式会社 研磨液および研磨方法
WO2011021860A2 (en) 2009-08-20 2011-02-24 Dongwoo Fine-Chem Co., Ltd. Method of fabricating array substrate for liquid crystal display
CN102696097B (zh) * 2009-12-25 2015-08-05 三菱瓦斯化学株式会社 蚀刻液及使用其的半导体装置的制造方法
WO2013015322A1 (ja) * 2011-07-26 2013-01-31 三菱瓦斯化学株式会社 銅／モリブデン系多層薄膜用エッチング液
JP2014032998A (ja) * 2012-08-01 2014-02-20 Panasonic Liquid Crystal Display Co Ltd 薄膜トランジスタの製造方法
KR20140118492A (ko) * 2013-03-29 2014-10-08 동우 화인켐 주식회사 구리계 금속막 식각액 조성물 및 이를 이용한 배선 형성 방법
JP6531612B2 (ja) * 2014-11-27 2019-06-19 三菱瓦斯化学株式会社 液体組成物およびこれを用いたエッチング方法

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Publication number Publication date
CN105648439A (zh) 2016-06-08
JP2016108659A (ja) 2016-06-20
TW201627533A (zh) 2016-08-01
KR20160064013A (ko) 2016-06-07
TWI667373B (zh) 2019-08-01
CN115125536A (zh) 2022-09-30
JP6657770B2 (ja) 2020-03-04

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