JP6645396B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

Info

Publication number
JP6645396B2
JP6645396B2 JP2016199127A JP2016199127A JP6645396B2 JP 6645396 B2 JP6645396 B2 JP 6645396B2 JP 2016199127 A JP2016199127 A JP 2016199127A JP 2016199127 A JP2016199127 A JP 2016199127A JP 6645396 B2 JP6645396 B2 JP 6645396B2
Authority
JP
Japan
Prior art keywords
chip
lead
semiconductor device
lead frame
current path
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2016199127A
Other languages
English (en)
Japanese (ja)
Other versions
JP2018060966A5 (enExample
JP2018060966A (ja
Inventor
敬昌 林
敬昌 林
俊介 戸本
俊介 戸本
勇輔 森
勇輔 森
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Denso Corp
Original Assignee
Denso Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Denso Corp filed Critical Denso Corp
Priority to JP2016199127A priority Critical patent/JP6645396B2/ja
Priority to CN201780060940.1A priority patent/CN109791926A/zh
Priority to PCT/JP2017/034829 priority patent/WO2018066420A1/ja
Publication of JP2018060966A publication Critical patent/JP2018060966A/ja
Publication of JP2018060966A5 publication Critical patent/JP2018060966A5/ja
Priority to US16/360,341 priority patent/US10998295B2/en
Application granted granted Critical
Publication of JP6645396B2 publication Critical patent/JP6645396B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/20—Modifications of basic electric elements for use in electric measuring instruments; Structural combinations of such elements with such instruments
    • G01R1/203—Resistors used for electric measuring, e.g. decade resistors standards, resistors for comparators, series resistors, shunts
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R15/00—Details of measuring arrangements of the types provided for in groups G01R17/00 - G01R29/00, G01R33/00 - G01R33/26 or G01R35/00
    • G01R15/14—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks
    • G01R15/146—Measuring arrangements for current not covered by other subgroups of G01R15/14, e.g. using current dividers, shunts, or measuring a voltage drop
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
    • G01R19/0092—Arrangements for measuring currents or voltages or for indicating presence or sign thereof measuring current only

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Inverter Devices (AREA)
  • Measuring Instrument Details And Bridges, And Automatic Balancing Devices (AREA)
JP2016199127A 2016-10-07 2016-10-07 半導体装置 Active JP6645396B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2016199127A JP6645396B2 (ja) 2016-10-07 2016-10-07 半導体装置
CN201780060940.1A CN109791926A (zh) 2016-10-07 2017-09-27 半导体装置
PCT/JP2017/034829 WO2018066420A1 (ja) 2016-10-07 2017-09-27 半導体装置
US16/360,341 US10998295B2 (en) 2016-10-07 2019-03-21 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2016199127A JP6645396B2 (ja) 2016-10-07 2016-10-07 半導体装置

Publications (3)

Publication Number Publication Date
JP2018060966A JP2018060966A (ja) 2018-04-12
JP2018060966A5 JP2018060966A5 (enExample) 2018-12-20
JP6645396B2 true JP6645396B2 (ja) 2020-02-14

Family

ID=61831648

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016199127A Active JP6645396B2 (ja) 2016-10-07 2016-10-07 半導体装置

Country Status (4)

Country Link
US (1) US10998295B2 (enExample)
JP (1) JP6645396B2 (enExample)
CN (1) CN109791926A (enExample)
WO (1) WO2018066420A1 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11107761B2 (en) * 2018-02-06 2021-08-31 Denso Corporation Semiconductor device
JP2019186403A (ja) 2018-04-11 2019-10-24 トヨタ自動車株式会社 半導体装置
DE102018207308B4 (de) * 2018-05-09 2020-07-02 Infineon Technologies Ag Halbleiterbauteil mit integriertem shunt-widerstand und verfahren zu dessen herstellung
JP2020047725A (ja) * 2018-09-18 2020-03-26 トヨタ自動車株式会社 半導体装置
JP7338204B2 (ja) * 2019-04-01 2023-09-05 富士電機株式会社 半導体装置
JP7479759B2 (ja) * 2020-06-02 2024-05-09 三菱電機株式会社 半導体装置の製造方法、および、半導体装置
US11555832B2 (en) * 2021-03-02 2023-01-17 Allegro Microsystems, Llc Integrated shunt and magnetic field current sensor
EP4156253A1 (en) * 2021-09-22 2023-03-29 Infineon Technologies Austria AG Resin encapsulated semiconductor package comprising an external recess with exposed electrical contacts and a semiconductor module using the same
EP4443734A1 (en) * 2023-04-06 2024-10-09 Hamilton Sundstrand Corporation Shoot-through protection and current monitoring scheme for multilevel power converters

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003199350A (ja) 2001-12-27 2003-07-11 Sanken Electric Co Ltd ３相交流‐直流変換装置
JP4471967B2 (ja) * 2006-12-28 2010-06-02 株式会社ルネサステクノロジ 双方向スイッチモジュール
JP5592073B2 (ja) 2009-02-09 2014-09-17 富士電機株式会社 双方向スイッチの電流検出回路
JP5467799B2 (ja) * 2009-05-14 2014-04-09 ルネサスエレクトロニクス株式会社 半導体装置
JP2011254387A (ja) * 2010-06-03 2011-12-15 Rohm Co Ltd 交流スイッチ
JP5477669B2 (ja) * 2012-02-28 2014-04-23 株式会社デンソー 半導体モジュール
US9263563B2 (en) * 2013-10-31 2016-02-16 Infineon Technologies Austria Ag Semiconductor device package
US20160261132A1 (en) * 2013-12-27 2016-09-08 Intel Corporation Hybrid power delivery system for an electronic device
JP6384112B2 (ja) * 2014-04-25 2018-09-05 三菱マテリアル株式会社 パワーモジュール用基板及びヒートシンク付パワーモジュール用基板
JP6384211B2 (ja) * 2014-09-03 2018-09-05 株式会社デンソー シャント抵抗器
JP6315103B2 (ja) * 2014-11-13 2018-04-25 株式会社村田製作所 パワー半導体のパッケージ素子
US9979187B2 (en) * 2015-11-12 2018-05-22 Infineon Technologies Austria Ag Power device with overvoltage arrester

Also Published As

Publication number Publication date
US10998295B2 (en) 2021-05-04
CN109791926A (zh) 2019-05-21
WO2018066420A1 (ja) 2018-04-12
US20190221549A1 (en) 2019-07-18
JP2018060966A (ja) 2018-04-12

Similar Documents

Publication Publication Date Title
JP6645396B2 (ja) 半導体装置
US10861756B2 (en) Semiconductor device including sensor and driving terminals spaced away from the semiconductor device case wall
US7247929B2 (en) Molded semiconductor device with heat conducting members
JP4985810B2 (ja) 半導体装置
CN103314437B (zh) 功率半导体模块及电源单元装置
JP6665926B2 (ja) 半導体装置および半導体装置の製造方法
JP6727428B2 (ja) 半導体装置
CN110771027B (zh) 功率半导体装置及使用该装置的电力转换装置
JP2013123014A (ja) 半導体装置
CN110176446B (zh) 半导体装置
JP4985809B2 (ja) 半導体装置
US20240321693A1 (en) Semiconductor device
CN111418049B (zh) 半导体装置
JP7734505B2 (ja) 半導体装置
US20210247243A1 (en) Circuit board assembly
JP2011199148A (ja) 半導体装置
US11315850B2 (en) Semiconductor device
US10109603B2 (en) Semiconductor device
JP2013062551A (ja) 半導体装置
JP4403166B2 (ja) パワーモジュールおよび電力変換装置
JP5132407B2 (ja) 半導体装置
JP2017069351A (ja) 半導体装置
JP2017069352A (ja) 半導体装置
KR20210044788A (ko) 제어 유닛의 회로 캐리어를 전기적으로 외부 접촉하는데 적합한, 제어 유닛용 하우징 프레임
JP2011199150A (ja) 半導体装置

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20181105

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20181105

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20191210

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20191223

R151 Written notification of patent or utility model registration

Ref document number: 6645396

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R151

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250