JP6628284B2 - 半導体製造用部品の再生方法及びその再生装置 - Google Patents
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- H01J37/32—Gas-filled discharge tubes
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02032—Preparing bulk and homogeneous wafers by reclaiming or re-processing
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
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- C—CHEMISTRY; METALLURGY
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
- C23C16/0254—Physical treatment to alter the texture of the surface, e.g. scratching or polishing
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- C—CHEMISTRY; METALLURGY
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/04—Coating on selected surface areas, e.g. using masks
- C23C16/042—Coating on selected surface areas, e.g. using masks using masks
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/56—After-treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/3255—Material
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02079—Cleaning for reclaiming
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
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- Microelectronics & Electronic Packaging (AREA)
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Description
Claims (13)
- 損傷した半導体製造用部品を備える準備ステップと、
前記損傷した半導体製造用部品を洗浄する第1洗浄ステップと、
洗浄済みの前記損傷した半導体製造用部品の非損傷の部分を含む領域のうち少なくともいずれか1つをジグによってマスキングするマスキングステップと、
マスキング済みの前記損傷した半導体製造用部品に化学気相蒸着法で再生部を形成する再生部形成ステップと、
前記再生部が形成された損傷した半導体製造用部品を加工する後加工ステップと、
後加工済みの前記再生部が形成された損傷した半導体製造用部品を洗浄する第2洗浄ステップと、
を含み、
前記マスキングステップは、前記損傷した半導体製造用部品の底面、外側面、及び内側面からなるグループより選択される少なくともいずれか1つの非損傷面をマスキングすることを含み、
前記ジグは、前記損傷した半導体製造用部品の非損傷面のうちの一面を支持する基準ジグと、前記損傷した半導体製造用部品の非損傷面のうちの前記一面ではない他の面を支持する他面ジグとを含み、
前記基準ジグの前記損傷した半導体製造用部品の非損傷面のうちの一面への接触面の面積は、前記損傷した半導体製造用部品の非損傷面のうちの一面の面積以下である、半導体製造用部品の再生方法。 - 前記準備ステップと前記第1洗浄ステップとの間に前加工ステップをさらに含む、請求項1に記載の半導体製造用部品の再生方法。
- 前記前加工ステップ、後加工ステップ又はこの両方は、ダイヤモンドホイールで切削加工する、請求項2に記載の半導体製造用部品の再生方法。
- 前記前加工ステップは、準備済みの前記損傷した半導体製造用部品の損傷部を0.8mm〜1.7mmの厚さだけ切削して加工する、請求項2に記載の半導体製造用部品の再生方法。
- 前記後加工ステップは、前記再生部から余剰部を切削収得するステップを含み、
前記余剰部を加工して別途の半導体製造用部品を製造する、請求項1に記載の半導体製造用部品の再生方法。 - 前記第2洗浄ステップは、第1物理的又は化学的洗浄ステップ、熱処理洗浄ステップ、及び第2物理的又は化学的洗浄ステップを含む、請求項1に記載の半導体製造用部品の再生方法。
- 前記熱処理洗浄ステップの熱処理温度は、800℃〜1400℃である、請求項6に記載の半導体製造用再生部品の再生方法。
- 化学気相蒸着チャンバーと、
前記チャンバー内に位置し、損傷した半導体製造用部品の非損傷の部分を含む領域をマスキングするマスキング部と、
を含む半導体製造用部品の再生装置であって、
前記マスキング部はジグを含み、
前記ジグは、前記損傷した半導体製造用部品の非損傷面のうちの一面を支持する基準ジグと、前記損傷した半導体製造用部品の非損傷面のうちの前記一面ではない他の面を支持する他面ジグとを含み、
前記基準ジグの前記損傷した半導体製造用部品の非損傷面のうちの一面への接触面の面積は、前記損傷した半導体製造用部品の非損傷面のうちの一面の面積以下である、半導体製造用部品の再生装置。 - 前記基準ジグはポイントジグである、請求項8に記載の半導体製造用部品の再生装置。
- 前記他面ジグは、前記損傷した半導体製造用部品の外側面を支持する外側面ジグと、前記損傷した半導体製造用部品の内側面を支持する内側面ジグと、を含む、請求項8に記載の半導体製造用部品の再生装置。
- 前記基準ジグと前記他面ジグは一体型である、請求項8に記載の半導体製造用部品の再生装置。
- 前記他面ジグの前記損傷した半導体製造用部品に接触する面の形状は、前記損傷した半導体製造用部品の接触面の形状に対応する、請求項8に記載の半導体製造用部品の再生装置。
- 前記半導体製造用部品の再生方法は、請求項8に記載の半導体製造用部品の再生装置を用いて実行される、請求項1に記載の半導体製造用再生部品の再生方法。
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JP6920244B2 (ja) * | 2018-04-23 | 2021-08-18 | 東京エレクトロン株式会社 | プラズマ処理方法 |
JP7138474B2 (ja) * | 2018-05-15 | 2022-09-16 | 東京エレクトロン株式会社 | 部品の修復方法及び基板処理システム |
KR102262330B1 (ko) * | 2019-04-16 | 2021-06-09 | 주식회사 티씨케이 | 반도체 제조용 부품의 재생 방법 및 재생된 반도체 제조용 부품 |
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US11230762B2 (en) | 2019-06-13 | 2022-01-25 | Admap Inc. | Film structure reproduction method and reproduction film structure |
JP6598132B1 (ja) * | 2019-06-13 | 2019-10-30 | 株式会社アドマップ | 成膜構造体の再生方法および再生成膜構造体 |
KR20230082958A (ko) * | 2021-12-02 | 2023-06-09 | 주식회사 케이엔제이 | 반도체 제조용 부품의 재생방법 및 재생부품 |
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