JP4098259B2 - プラズマ処理装置 - Google Patents
プラズマ処理装置 Download PDFInfo
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- JP4098259B2 JP4098259B2 JP2004052808A JP2004052808A JP4098259B2 JP 4098259 B2 JP4098259 B2 JP 4098259B2 JP 2004052808 A JP2004052808 A JP 2004052808A JP 2004052808 A JP2004052808 A JP 2004052808A JP 4098259 B2 JP4098259 B2 JP 4098259B2
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- 239000011248 coating agent Substances 0.000 claims description 7
- 238000000576 coating method Methods 0.000 claims description 7
- 239000000203 mixture Substances 0.000 claims description 3
- 235000012431 wafers Nutrition 0.000 description 32
- 238000005530 etching Methods 0.000 description 27
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 13
- 239000004065 semiconductor Substances 0.000 description 13
- 239000007789 gas Substances 0.000 description 12
- 238000000034 method Methods 0.000 description 12
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 10
- 150000002500 ions Chemical class 0.000 description 10
- 238000001179 sorption measurement Methods 0.000 description 10
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- 238000004544 sputter deposition Methods 0.000 description 7
- 238000012360 testing method Methods 0.000 description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000011069 regeneration method Methods 0.000 description 6
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- 230000008859 change Effects 0.000 description 4
- 239000000460 chlorine Substances 0.000 description 4
- 229910052801 chlorine Inorganic materials 0.000 description 4
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 230000003628 erosive effect Effects 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 3
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- 239000000126 substance Substances 0.000 description 3
- CPELXLSAUQHCOX-UHFFFAOYSA-N Hydrogen bromide Chemical compound Br CPELXLSAUQHCOX-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
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- 238000009826 distribution Methods 0.000 description 2
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- 230000007246 mechanism Effects 0.000 description 2
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- 239000000047 product Substances 0.000 description 2
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- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 229940105963 yttrium fluoride Drugs 0.000 description 2
- RBORBHYCVONNJH-UHFFFAOYSA-K yttrium(iii) fluoride Chemical compound F[Y](F)F RBORBHYCVONNJH-UHFFFAOYSA-K 0.000 description 2
- CPELXLSAUQHCOX-UHFFFAOYSA-M Bromide Chemical compound [Br-] CPELXLSAUQHCOX-UHFFFAOYSA-M 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
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- 238000002048 anodisation reaction Methods 0.000 description 1
- 238000007743 anodising Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000005422 blasting Methods 0.000 description 1
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- 238000011109 contamination Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 229910000042 hydrogen bromide Inorganic materials 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
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- 239000007921 spray Substances 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
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Description
以下、本発明のプラズマ処理装置について、図示の実施の形態により詳細に説明する。
100…処理室、101…アンテナ、105…ハウジング、102…磁場形成手段、150…静電吸着電極、W…半導体ウエハ、103…真空排気系、104…排気調整手段、106…高電圧電源、107…バイアス電源、108…マッチング回路、109…温調ユニット、121…アンテナ電源、122…マッチング回路、
Claims (1)
- その内部にプラズマが形成される処理室と、該処理室の内側の下部に配置されその上に基板状の試料が載置される試料台と、該試料台に高周波電力を印加する電源と、前記試料台における前記試料が載置される面の外周側に配置されて前記試料台を覆うカバーとを有し、前記処理室内の前記試料台の上方の空間に生成したプラズマを用いて前記試料を処理するプラズマ処理装置であって、
前記カバーが、前記試料の外周端の直下方の部分と該部分の外周側で前記外周端の外周側に位置してその断面がテーパー状の部分、又は、前記試料の外周端の直下方の部分及び前記テーパー状の部分の少なくとも一部を被覆するY2O3、Yb2O3又はYF3を主成分とした材料あるいはこれらの混合材から構成された被膜であって、前記試料の外周端の直下方の部分が他の部分より厚くされた被膜を備えたことを特徴とするプラズマ処理装置。
Priority Applications (1)
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JP2004052808A JP4098259B2 (ja) | 2004-02-27 | 2004-02-27 | プラズマ処理装置 |
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JP2004052808A JP4098259B2 (ja) | 2004-02-27 | 2004-02-27 | プラズマ処理装置 |
Related Child Applications (1)
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JP2007312196A Division JP2008098660A (ja) | 2007-12-03 | 2007-12-03 | プラズマ処理装置 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2005243988A JP2005243988A (ja) | 2005-09-08 |
JP2005243988A5 JP2005243988A5 (ja) | 2005-11-17 |
JP4098259B2 true JP4098259B2 (ja) | 2008-06-11 |
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JP2004052808A Expired - Lifetime JP4098259B2 (ja) | 2004-02-27 | 2004-02-27 | プラズマ処理装置 |
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Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4508054B2 (ja) * | 2005-09-12 | 2010-07-21 | パナソニック株式会社 | 電極部材の製造方法 |
JP2007115973A (ja) * | 2005-10-21 | 2007-05-10 | Shin Etsu Chem Co Ltd | 耐食性部材 |
KR101046902B1 (ko) * | 2005-11-08 | 2011-07-06 | 도쿄엘렉트론가부시키가이샤 | 샤워 플레이트 및 샤워 플레이트를 사용한 플라즈마 처리장치 |
WO2008035508A1 (fr) * | 2006-09-20 | 2008-03-27 | Sharp Kabushiki Kaisha | Composant pour appareil de traitement, appareil de traitement, procédé pour fabriquer un composant pour appareil de traitement et procédé pour fabriquer cet appareil de traitement |
JP5193481B2 (ja) * | 2007-03-16 | 2013-05-08 | 株式会社日立ハイテクノロジーズ | プラズマ処理方法及びプラズマ処理装置 |
JP2008270595A (ja) * | 2007-04-23 | 2008-11-06 | Texas Instr Japan Ltd | 反応生成物剥離防止構造及びその製作方法、並びに当該構造を用いる半導体装置の製造方法 |
KR101617984B1 (ko) | 2012-02-03 | 2016-05-18 | 도카로 가부시키가이샤 | 백색 불화물 용사 피막의 흑색화 방법 및 표면에 흑색층을 갖는 불화물 용사 피막 피복 부재 |
KR20140110069A (ko) | 2012-02-09 | 2014-09-16 | 도카로 가부시키가이샤 | 불화물 용사 피막의 형성 방법 및 불화물 용사 피막 피복 부재 |
CN104701125A (zh) * | 2013-12-05 | 2015-06-10 | 中微半导体设备(上海)有限公司 | 气体分布板 |
KR101671671B1 (ko) | 2016-05-25 | 2016-11-01 | 주식회사 티씨케이 | 반도체 제조용 부품의 재생방법과 그 재생장치 및 재생부품 |
WO2019187785A1 (ja) * | 2018-03-26 | 2019-10-03 | 日本碍子株式会社 | 静電チャックヒータ |
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2004
- 2004-02-27 JP JP2004052808A patent/JP4098259B2/ja not_active Expired - Lifetime
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