JP2005243988A - プラズマ処理装置 - Google Patents
プラズマ処理装置 Download PDFInfo
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- JP2005243988A JP2005243988A JP2004052808A JP2004052808A JP2005243988A JP 2005243988 A JP2005243988 A JP 2005243988A JP 2004052808 A JP2004052808 A JP 2004052808A JP 2004052808 A JP2004052808 A JP 2004052808A JP 2005243988 A JP2005243988 A JP 2005243988A
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- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 3
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
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- RBORBHYCVONNJH-UHFFFAOYSA-K yttrium(iii) fluoride Chemical compound F[Y](F)F RBORBHYCVONNJH-UHFFFAOYSA-K 0.000 description 2
- CPELXLSAUQHCOX-UHFFFAOYSA-M Bromide Chemical compound [Br-] CPELXLSAUQHCOX-UHFFFAOYSA-M 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
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Abstract
【解決手段】処理室内に配置された試料台を備え、試料台の保持ステージを保護する電極カバー3を具備し、プラズマを発生して保持ステージに載置されたウエハWをプラズマ処理するプラズマ処理装置において、電極カバー3は、少なくともウエハ端部の直下に位置する表面、又はプラズマと接する表面を、Y2O3、Yb2O3、YF3のいずれかを主成分とした耐プラズマ性材料またはこれらの混合材で被覆する。
【選択図】図2
Description
前記電極カバーは、少なくともウエハ端部の直下に位置する表面、又は前記プラズマと接する表面を、Y2O3、Yb2O3、YF3のいずれかを主成分とした耐プラズマ性材料またはこれらの混合材で被覆しているプラズマ処理装置である。
以下、本発明のプラズマ処理装置について、図示の実施の形態により詳細に説明する。
100…処理室、101…アンテナ、105…ハウジング、102…磁場形成手段、150…静電吸着電極、W…半導体ウエハ、103…真空排気系、104…排気調整手段、106…高電圧電源、107…バイアス電源、108…マッチング回路、109…温調ユニット、121…アンテナ電源、122…マッチング回路、
Claims (2)
- 処理室内に配置された試料台を備え、該試料台の保持ステージを保護する電極カバーを具備し、プラズマを発生して前記保持ステージに載置されたウエハをプラズマ処理するプラズマ処理装置において、
前記電極カバーは、少なくともウエハ端部の直下に位置する表面、又は前記プラズマと接する表面を、Y2O3、Yb2O3、YF3のいずれかを主成分とした耐プラズマ性材料またはこれらの混合材で被覆していることを特徴とするプラズマ処理装置。 - 請求項1記載のプラズマ処理装置において、
上記電極カバーの表面は、ウエハ端部の直下の部分の耐プラズマ性の被覆層の厚さが、他の部分の耐プラズマ性材料の被覆の厚さより厚いことを特徴とするプラズマ処理装置。
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JP2004052808A JP4098259B2 (ja) | 2004-02-27 | 2004-02-27 | プラズマ処理装置 |
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JP2007312196A Division JP2008098660A (ja) | 2007-12-03 | 2007-12-03 | プラズマ処理装置 |
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JP2005243988A5 JP2005243988A5 (ja) | 2005-11-17 |
JP4098259B2 JP4098259B2 (ja) | 2008-06-11 |
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Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007080912A (ja) * | 2005-09-12 | 2007-03-29 | Matsushita Electric Ind Co Ltd | プラズマ処理装置およびプラズマ処理装置用の電極部材ならびに電極部材の製造方法およびリサイクル方法 |
JP2007115973A (ja) * | 2005-10-21 | 2007-05-10 | Shin Etsu Chem Co Ltd | 耐食性部材 |
WO2007055185A1 (ja) * | 2005-11-08 | 2007-05-18 | Tohoku University | シャワープレート及びシャワープレートを用いたプラズマ処理装置 |
WO2008035508A1 (fr) * | 2006-09-20 | 2008-03-27 | Sharp Kabushiki Kaisha | Composant pour appareil de traitement, appareil de traitement, procédé pour fabriquer un composant pour appareil de traitement et procédé pour fabriquer cet appareil de traitement |
JP2008227427A (ja) * | 2007-03-16 | 2008-09-25 | Hitachi High-Technologies Corp | プラズマ処理方法及びプラズマ処理装置 |
JP2008270595A (ja) * | 2007-04-23 | 2008-11-06 | Texas Instr Japan Ltd | 反応生成物剥離防止構造及びその製作方法、並びに当該構造を用いる半導体装置の製造方法 |
US9238863B2 (en) | 2012-02-03 | 2016-01-19 | Tocalo Co., Ltd. | Method for blackening white fluoride spray coating, and fluoride spray coating covered member having a blackened layer on its surface |
US9421570B2 (en) | 2012-02-09 | 2016-08-23 | Tocalo Co., Ltd. | Method for forming fluoride spray coating and fluoride spray coating covered member |
TWI563563B (ja) * | 2013-12-05 | 2016-12-21 | ||
JP2017212427A (ja) * | 2016-05-25 | 2017-11-30 | 韓國東海炭素株式會社 | 半導体製造用部品の再生方法、その再生装置及び再生部品 |
WO2019187785A1 (ja) * | 2018-03-26 | 2019-10-03 | 日本碍子株式会社 | 静電チャックヒータ |
-
2004
- 2004-02-27 JP JP2004052808A patent/JP4098259B2/ja not_active Expired - Lifetime
Cited By (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007080912A (ja) * | 2005-09-12 | 2007-03-29 | Matsushita Electric Ind Co Ltd | プラズマ処理装置およびプラズマ処理装置用の電極部材ならびに電極部材の製造方法およびリサイクル方法 |
JP4508054B2 (ja) * | 2005-09-12 | 2010-07-21 | パナソニック株式会社 | 電極部材の製造方法 |
KR101259524B1 (ko) * | 2005-09-12 | 2013-05-06 | 파나소닉 주식회사 | 플라즈마 처리장치 및 플라즈마 처리장치용의 전극 부재 및전극 부재의 제조방법 및 재사용 방법 |
JP2007115973A (ja) * | 2005-10-21 | 2007-05-10 | Shin Etsu Chem Co Ltd | 耐食性部材 |
WO2007055185A1 (ja) * | 2005-11-08 | 2007-05-18 | Tohoku University | シャワープレート及びシャワープレートを用いたプラズマ処理装置 |
JP4993610B2 (ja) * | 2005-11-08 | 2012-08-08 | 国立大学法人東北大学 | シャワープレート及びシャワープレートを用いたプラズマ処理装置 |
WO2008035508A1 (fr) * | 2006-09-20 | 2008-03-27 | Sharp Kabushiki Kaisha | Composant pour appareil de traitement, appareil de traitement, procédé pour fabriquer un composant pour appareil de traitement et procédé pour fabriquer cet appareil de traitement |
JP2008227427A (ja) * | 2007-03-16 | 2008-09-25 | Hitachi High-Technologies Corp | プラズマ処理方法及びプラズマ処理装置 |
JP2008270595A (ja) * | 2007-04-23 | 2008-11-06 | Texas Instr Japan Ltd | 反応生成物剥離防止構造及びその製作方法、並びに当該構造を用いる半導体装置の製造方法 |
US9238863B2 (en) | 2012-02-03 | 2016-01-19 | Tocalo Co., Ltd. | Method for blackening white fluoride spray coating, and fluoride spray coating covered member having a blackened layer on its surface |
US9421570B2 (en) | 2012-02-09 | 2016-08-23 | Tocalo Co., Ltd. | Method for forming fluoride spray coating and fluoride spray coating covered member |
TWI563563B (ja) * | 2013-12-05 | 2016-12-21 | ||
JP2017212427A (ja) * | 2016-05-25 | 2017-11-30 | 韓國東海炭素株式會社 | 半導体製造用部品の再生方法、その再生装置及び再生部品 |
CN107437495A (zh) * | 2016-05-25 | 2017-12-05 | 韩国东海炭素株式会社 | 半导体制造用部件的再生方法和其再生装置及再生部件 |
US10586687B2 (en) | 2016-05-25 | 2020-03-10 | Tokai Carbon Korea Co., Ltd. | Method and apparatus for reproducing component of semiconductor manufacturing apparatus, and reproduced component |
CN107437495B (zh) * | 2016-05-25 | 2021-01-29 | 韩国东海炭素株式会社 | 半导体制造用部件的再生方法和其再生装置及再生部件 |
WO2019187785A1 (ja) * | 2018-03-26 | 2019-10-03 | 日本碍子株式会社 | 静電チャックヒータ |
JPWO2019187785A1 (ja) * | 2018-03-26 | 2021-04-15 | 日本碍子株式会社 | 静電チャックヒータ |
JP7239560B2 (ja) | 2018-03-26 | 2023-03-14 | 日本碍子株式会社 | 静電チャックヒータ |
US11664203B2 (en) | 2018-03-26 | 2023-05-30 | Ngk Insulators, Ltd. | Electrostatic-chuck heater |
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