TWI563563B - - Google Patents

Info

Publication number
TWI563563B
TWI563563B TW103141174A TW103141174A TWI563563B TW I563563 B TWI563563 B TW I563563B TW 103141174 A TW103141174 A TW 103141174A TW 103141174 A TW103141174 A TW 103141174A TW I563563 B TWI563563 B TW I563563B
Authority
TW
Taiwan
Application number
TW103141174A
Other languages
Chinese (zh)
Other versions
TW201533798A (zh
Inventor
guo-feng Yao
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of TW201533798A publication Critical patent/TW201533798A/zh
Application granted granted Critical
Publication of TWI563563B publication Critical patent/TWI563563B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/3255—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32559—Protection means, e.g. coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
TW103141174A 2013-12-05 2014-11-27 氣體分布板 TW201533798A (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201310654159.0A CN104701125A (zh) 2013-12-05 2013-12-05 气体分布板

Publications (2)

Publication Number Publication Date
TW201533798A TW201533798A (zh) 2015-09-01
TWI563563B true TWI563563B (ja) 2016-12-21

Family

ID=53348133

Family Applications (1)

Application Number Title Priority Date Filing Date
TW103141174A TW201533798A (zh) 2013-12-05 2014-11-27 氣體分布板

Country Status (2)

Country Link
CN (1) CN104701125A (ja)
TW (1) TW201533798A (ja)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101861983B1 (ko) * 2015-09-07 2018-05-28 미쓰이금속광업주식회사 옥시불화이트륨, 안정화 옥시불화이트륨 제조용 원료 분말 및 안정화 옥시불화이트륨의 제조 방법
KR102545922B1 (ko) 2015-12-28 2023-06-21 닛폰 이트륨 가부시키가이샤 막 형성용 재료
US11572617B2 (en) 2016-05-03 2023-02-07 Applied Materials, Inc. Protective metal oxy-fluoride coatings
TWM563652U (zh) * 2016-10-13 2018-07-11 美商應用材料股份有限公司 用於電漿處理裝置的腔室部件及包含其之裝置
US10563303B2 (en) 2017-05-10 2020-02-18 Applied Materials, Inc. Metal oxy-flouride films based on oxidation of metal flourides
CN109920715A (zh) * 2017-12-12 2019-06-21 中微半导体设备(上海)股份有限公司 一种等离子体刻蚀反应器
CN112053929A (zh) * 2019-06-06 2020-12-08 中微半导体设备(上海)股份有限公司 用于等离子体腔室内部的部件及其制作方法
CN112908822B (zh) * 2019-12-04 2024-04-05 中微半导体设备(上海)股份有限公司 形成耐等离子体涂层的方法、零部件和等离子体处理装置
CN113802094B (zh) * 2020-06-16 2024-04-05 中微半导体设备(上海)股份有限公司 耐腐蚀涂层的镀膜方法及等离子体刻蚀零部件和反应装置
CN114256047B (zh) * 2020-09-25 2023-12-22 中微半导体设备(上海)股份有限公司 半导体零部件、涂层形成方法和等离子体反应装置

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005243988A (ja) * 2004-02-27 2005-09-08 Hitachi High-Technologies Corp プラズマ処理装置
JP2007324186A (ja) * 2006-05-30 2007-12-13 Hitachi High-Technologies Corp プラズマ処理装置
US20080099148A1 (en) * 2006-10-30 2008-05-01 Elmira Ryabova Method for fabricating plasma reactor parts
KR20080079584A (ko) * 2007-02-27 2008-09-01 어드밴스드 마이크로 패브리케이션 이큅먼트 인코퍼레이티드 아시아 플라즈마 에칭 챔버용 실리콘 카바이드제 가스 공급판 및ｒｆ 전극
JP2008273823A (ja) * 2007-04-27 2008-11-13 Applied Materials Inc ハロゲン含有プラズマに露出された表面の浸食速度を減じる装置及び方法
TW201036060A (en) * 2009-03-20 2010-10-01 Hannstar Display Corp Gas distribution plate for plasma etching process
US20110036874A1 (en) * 2002-02-14 2011-02-17 Applied Materials, Inc. Solid yttrium oxide-containing substrate which has been cleaned to remove impurities

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7311797B2 (en) * 2002-06-27 2007-12-25 Lam Research Corporation Productivity enhancing thermal sprayed yttria-containing coating for plasma reactor
KR20110088549A (ko) * 2008-11-04 2011-08-03 프랙스에어 테크놀로지, 인코포레이티드 반도체 응용을 위한 열 분무 코팅
US8206829B2 (en) * 2008-11-10 2012-06-26 Applied Materials, Inc. Plasma resistant coatings for plasma chamber components
US9017765B2 (en) * 2008-11-12 2015-04-28 Applied Materials, Inc. Protective coatings resistant to reactive plasma processing

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110036874A1 (en) * 2002-02-14 2011-02-17 Applied Materials, Inc. Solid yttrium oxide-containing substrate which has been cleaned to remove impurities
JP2005243988A (ja) * 2004-02-27 2005-09-08 Hitachi High-Technologies Corp プラズマ処理装置
JP2007324186A (ja) * 2006-05-30 2007-12-13 Hitachi High-Technologies Corp プラズマ処理装置
US20080099148A1 (en) * 2006-10-30 2008-05-01 Elmira Ryabova Method for fabricating plasma reactor parts
KR20080079584A (ko) * 2007-02-27 2008-09-01 어드밴스드 마이크로 패브리케이션 이큅먼트 인코퍼레이티드 아시아 플라즈마 에칭 챔버용 실리콘 카바이드제 가스 공급판 및ｒｆ 전극
JP2008273823A (ja) * 2007-04-27 2008-11-13 Applied Materials Inc ハロゲン含有プラズマに露出された表面の浸食速度を減じる装置及び方法
TW201036060A (en) * 2009-03-20 2010-10-01 Hannstar Display Corp Gas distribution plate for plasma etching process

Also Published As

Publication number Publication date
CN104701125A (zh) 2015-06-10
TW201533798A (zh) 2015-09-01

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