經濟部中央標準局負工消費合作社印裝 A7 B7 五、發明説明（） 發明領域： 本發明與一種製造積體電路以及平面顯示器（flat panel display)的製程系統有關。特別是一種於處理系統 中’用以避免晶片背面生成 和；物的承載裝置（s u s c e p t 〇 r) 以及淨氣導管（purge guide)。 發明背景： 一般來說’積體電路以及平面顯示器（flat pane! display)的製程係沉積多層的薄膜（例如金屬層或介電層） 於基板上’然後將其圖案化以形成不同的結構。在主要的 應用當中，單一基板（例如1 0 0楚米、2 0 0以及3 0 0的基板） 係用來形成多個晶粒（die)於其上。目前的趨勢是增加基板 的面積同時減少元件的尺寸’使得更多的晶粒（die)可形成 於其上。因此’ 一個關於製造積體電路以及平面顯示器的 重要觀點是：使無法製作完整晶粒的邊緣殘留區域（edge exclusion)全面減少。 吾人想要的是將沉積物排除於基板的背面以及邊緣 外’使得基板不會黏附於支撐基板的承載裝置（susceptor) 上’以及避免沉積物無法附著或形成於易剝落（flaking)之 基板區域上。基板背面以及邊緣的沉積物都可能會在系統 中造成微粒（particle)。 為了消除基板背面以及邊緣的沉積物，吾人使用一種 由基板背面以及淨氣導管或淨化環傳來的淨化氣體（purge gases)。該淨氣導管見於一篇標題為"Chemical Vapor __ 第4頁 本紙張尺度適用中國國家標年（CNS ) Λ4規格（2丨〇χ297公缝） ----i---^---艾--；---„--訂------線 (請先閱讀背面之注意事項再填寫本頁) · 經濟部中央標準局貞工消費合作社印裝 Λ7 Β7 五、發明説明（）Printed by the Central Standards Bureau of the Ministry of Economic Affairs and Consumer Cooperatives A7 B7 V. Description of the Invention () Field of the Invention: The present invention relates to a process system for manufacturing integrated circuits and flat panel displays. In particular, it is used in a processing system to prevent the formation of wafers and substrates on the backside of the wafer (suc ce p t 〇 r) and purge guide. Background of the invention: Generally, the process of 'integrated circuit and flat pane! Display' is to deposit multiple layers of thin film (such as metal layer or dielectric layer) on a substrate 'and then pattern it to form different structures. In the main application, a single substrate (for example, a substrate of 100 mm, 200, and 300) is used to form multiple dies on it. The current trend is to increase the area of the substrate while reducing the size of the element 'so that more dies can be formed thereon. Therefore, an important point about manufacturing integrated circuits and flat-panel displays is to reduce the edge exclusion area that cannot make a complete die. What I want is to exclude the deposits from the back and edges of the substrate 'so that the substrate will not stick to the susceptor supporting the substrate' and to prevent the deposits from attaching or forming on areas of the substrate that are easily flaking. on. Deposits on the back and edges of the substrate can cause particles in the system. In order to eliminate the deposits on the back of the substrate and the edges, I use a purge gas that is transmitted from the back of the substrate and the air duct or purification ring. The air purifying duct is found in an article entitled "Chemical Vapor __ Page 4 This paper is applicable to the Chinese National Standard Year (CNS) Λ4 specification (2 丨 〇χ297 common seam) ---- i --- ^ --- Ai--; ------- Order ------ line (please read the notes on the back before filling this page) · Printed by Zhengong Consumer Cooperative, Central Standards Bureau, Ministry of Economic Affairs Λ7 Β7 V. Description of the invention ( )
Deposition Chamber with a Purge Guide(具有淨氣導管之 化學氣相沉積法反應室）”的美國專利（u s patent Ν ο. 5 5 1 6 3 6 7)，此文獻附於此作為參考。第！圖為一習知 的基板支撐元件1 0以及淨氨導管1 2之橫截面，此淨氣導 管1 2係以基板支扭元件上的肩部1 4支轉，此淨氣導管1 2 包含一接觸或懸於基板1 8邊緣的内圈邊緣部份1 6。此内 圈邊緣邵份1 ό定義出一介於其下表面與基板之間的狹有 通道，用以流通淨化氣體。此淨化氣體經過支撐元件流到 具有淨氣導管的基板邊緣。然而，此淨化氣體向外流經淨 氣導管1 2與基板支撐元件肩部j 4之間的縫隙（gap)時，會 造成一低壓區域，此低壓區域會將製程氣體（reacti〇n gases; 吸引至基板的邊緣和背面，而導致不想要的沉積物形成於 其上。 上述淨氣導管所遇到的一個問題是··必須嚴密控制背 面氣體的流速，以避免沉積物生成於基板的邊緣和背面， 同時促進基板表面上的沉積均勻性。必須嚴密控制淨氣導 管與基板間的淨化氣體流速，以免對向基板外緣的沉積均 勻性造成負面效應，因為淨化氣體會阻斷製程氣體 (process gas)流經基板的表面上。 另-個遇到的問题是：對於邊緣殘留區域（edge eXC丨USi〇n )的要求已經提高。在過去，基板外圍的邊緣殘 留區域（其自基板邊緣向㈣起為薄料度的90%)為6麓 米是可接受的。但最近此项要求已提高到自邊緣雨内算 起具有90%至95%薄膜厚度的殘留區域只能有3麓米， (請先閲讀背而之注意事項再填寫本頁) -^J „ 、1τ線’ i------------- A7 B7 經濟部中央標準局員工消費合作社印製 五、發明说明（ 因此，必須調整淨氣導管與淨化氣體以符合提高的要求。 因此有必要提供一淨氣導管與支撐基板的承載裝置 (susceptor)，用以避免生成背面與邊緣的沉積物，同時減 少圍繞在基板的周園的殘留區域。 發明目的及概述： 本發明提供一種於製程中支撐基板的基板支撐元 件，以及一傳送淨化氣體至基板邊緣與側面的淨氣導管， 以避免生成邊緣與側面的沉積物。 本發明的第一態樣為提供一具有支撐肩部之加熱器 護罩（heater shield) ’以及淨氣導管的基板支撐元件 (support member)。調整該加熱器護罩使淨氣.導管對準該 加熱器護罩以及該支撐元件。該肩部的内壁（inner wall) 以及淨氣導管形成一可傳輸淨化氣體至基板背面以及邊 緣的淨化氣體通道。此支撐元件也包含一使基板牢固於此 支掠元件表面的真空夾具（v a c u u m c h u c k )。 本發明之另一態樣係提供具有數種角度之淨氣孔洞 的淨氣導管，用以導引淨化氣體流過基板的邊緣並且避開 沉積中的基板表面。此淨氣導管包含一製程中懸於基板上 的内圈邊緣（inner lips)部份，以及位於内部與外部基座間 的對準凹處。而且，數個支撐此淨氣導管的支撐腳配置於 内部基座的下表面，與此支撐元件成一隔離關係。 本發明之另一態樣係提供-具有支撐元件以及淨氣 導管的反應室（processing chamber)，分別用以支撺此反應 第6頁 本紙張尺度適用中國國家標準（CNS ) Λ4規格（210X297公釐） ----1 — 7---裝---！---^丨訂------線 (請先閲讀背而之注意事項再填寫本頁) _ ΑΊ Β7 五、發明説明（） 室内的基板，且提供一緊鄰於基板邊緣的氣體阻障牆（gas barrier wall) ° 本發明之再一態樣係提供一種遮蔽基板邊緣的方 法，係藉由一具有數個淨氣孔洞的淨氣導管以及流經基板 邊緣然後流回淨氣孔洞的淨化氣體。 圖式簡單說明： 第1圖係一用於化學氣相沉積（CVD)的習知設備。 第2圖係本發明之化學氣相沉積（CVD)設備的剖面圖。 第3圖係第2圖中之設備的部份爆炸圖。 第4圖係本發明之淨氣導管的俯視圖。 第5圖係本發明之淨氣導管的另一實施例。 (請先閱讀背而之注意事項再填寫本頁) 經濟部中央標準局員工消費合作社印製 圖號對 /»' \ 說 明 * 10 基 板 支 撐 元 件 12 淨 氣 導 管 14 肩 部 1 6 内 圈 邊 緣部份 18 基 板 20 反 應 室 22 基 板 支 撐 元 件 24 淨 氣 導 管 26 側 壁 28 上 蓋 30 底 牆 32 封 閉 空 34 進 氣 36 蓮 蓬 頭 38 上 表 面 40 氣 體 通 道 4 1 垂 直 轉 軸 42 肩 部 44 力口 器 遮 罩 46 内 垂 直 壁 本紙張尺度適用中國國家標準（CNS ) Λ4規格（21〇Χ297公釐） A7 B7 經濟部中央標準局員工消費合作社印製 五、發明説明（） 48 外 垂 直 壁 49 對 準 面 50 支 撐 板 52 淨 化 氣 體 通道 53 外 表 面 54 支 撐 元 件 2 2的外表面 56 通 風 孔 58 下 部 60 凹 處 62 拴 鎖 64 下 表 面 66 淨 氣 孔 洞 68 内 圈 邊 緣 70 基 板 72 内 部 基 座 74 外 部 基 座 76 凹 處 78 淨 氣 導 管 的下表面 84 隔 墊 86 淨 氣 導 管內 圈邊緣的下表面 發明詳細說明： 第2圖為反應室2 0之剖面圖，圖中顯示一基板支撐 元件22以及本發明之淨氣導管24。第3圖係第2圖中之 設備的部份爆炸圖。一般來說，此沉積腔2 0包含一側壁 26、上蓋（lid)28以及底牆30，以形成一封閉空間32。通 入上蓋進氣口（ini et)34的製程氣體（process gas)，經由一 位於反應室上方的蓮蓬頭（shower head)36排入反應室，可 垂直移動的基板支撐元件22(通常是指susceptor或加熱器） 之配置係穿過反應室的底牆，且包含一支撐基板的上表面 3 8。淨化氣體經由位於基板支撐元件中的氣體通道40通 入反應室内，然後傳送至支撐元件22邊緣與淨氣導管24 之間的基板邊緣。排氣系統（未顯示）將氣體排出於反應室 _第8耳_ 本紙張尺度適用中國國家標準（CNS ) A4規格（210X 297公釐） . y. 装---；---_--訂------線 (請先閱讀背面之注意事項再填寫本頁) ' . A7 B7 經濟部中央標準局員工消費合作社印製 五、發明説明（ 之外，且提供一製程所需的真空環户"Deposition Chamber with a Purge Guide" (US patent No. 5 5 1 6 3 6 7), which is hereby incorporated by reference. Figure! For a cross section of a conventional substrate supporting element 10 and a net ammonia catheter 12, the net gas duct 12 is rotated by a shoulder 14 on the base plate torsion element, and the net gas duct 12 includes a contact Or the inner ring edge portion 16 suspended from the edge of the substrate 18. The inner ring edge 1 defines a narrow channel between the lower surface and the substrate for the purification gas to pass through. This purification gas passes through The support element flows to the edge of the substrate with the clean air duct. However, when the purge gas flows out through the gap between the clean air duct 12 and the shoulder j 4 of the substrate support element, a low pressure region will be created. This low pressure The region will attract process gases (reaction gases; to the edges and back of the substrate, causing unwanted deposits to form on it. One of the problems encountered with the aforementioned clean gas ducts is that the back gas must be tightly controlled. Flow rate to avoid sediment growth It is formed on the edge and back of the substrate, and at the same time promotes the uniformity of deposition on the surface of the substrate. The flow rate of the purge gas between the clean gas duct and the substrate must be tightly controlled to avoid negative effects on the uniformity of deposition to the outer edge of the substrate, because the purge gas will Process gas is blocked from flowing through the surface of the substrate. Another problem encountered is that the requirements for edge eXCUSUSion have been increased. In the past, the edge peripheral area of the substrate periphery (It is 90% of the thinness from the edge of the substrate to the bottom) It is acceptable for 6 feet. However, this requirement has recently been increased to a residual area with a film thickness of 90% to 95% from the edge rain. There can only be 3 feet, (please read the precautions before filling this page)-^ J „, 1τ line 'i ------------- A7 B7 Central Bureau of Standards, Ministry of Economic Affairs Printed by the Consumer Consumption Cooperative V. Invention Description (Therefore, it is necessary to adjust the clean air duct and the purified gas to meet the increased requirements. Therefore, it is necessary to provide a susceptor of the clean air duct and the supporting substrate to avoid generating backside and Edge deposition At the same time, the remaining area around the periphery of the substrate is reduced. Purpose and summary of the invention: The present invention provides a substrate support element that supports the substrate during the manufacturing process, and a clean air duct that transmits purified gas to the edges and sides of the substrate to avoid Generates deposits on the edges and sides. A first aspect of the present invention is to provide a heater shield 'with a supporting shoulder and a substrate support member of the air cleaner duct. The heater shield is adjusted The shroud aligns the clean air. Conduit to the heater shroud and the support element. The inner wall of the shoulder and the air-purifying duct form a purge gas channel that can transmit the purge gas to the back and edges of the substrate. The support element also includes a vacuum fixture (v a c u u m c h u c k) that secures the substrate to the surface of the supporting element. Another aspect of the present invention is to provide a net gas duct with net gas holes of several angles, for guiding the purification gas to flow through the edge of the substrate and avoiding the surface of the substrate during deposition. The air cleaning duct includes an inner lips portion suspended from a substrate during a process, and an alignment recess between the inner and outer bases. Moreover, a plurality of supporting feet supporting the air purifying duct are arranged on the lower surface of the internal base, and are in an isolated relationship with the supporting element. Another aspect of the present invention is to provide a reaction chamber with a supporting element and a clean air duct to support the reaction, respectively. Page 6 This paper applies the Chinese National Standard (CNS) Λ4 specification (210X297) %) ---- 1 — 7 --- install ---! --- ^ 丨 Order ------ line (please read the precautions before filling this page) _ ΑΊ Β7 5. Description of the invention () The substrate in the room, and provide a gas resistance close to the edge of the substrate Gas barrier wall ° Another aspect of the present invention is to provide a method for shielding the edge of a substrate by means of a clean air duct with a plurality of clean air holes and a flow through the edge of the substrate and then back to the clean air holes. Purify the gas. Brief description of the drawings: Figure 1 is a conventional device for chemical vapor deposition (CVD). Figure 2 is a cross-sectional view of a chemical vapor deposition (CVD) apparatus of the present invention. Figure 3 is a partial exploded view of the equipment in Figure 2. Fig. 4 is a plan view of the air purifying duct of the present invention. Fig. 5 is another embodiment of the air purifying duct of the present invention. (Please read the precautions before filling this page) Printed by the Consumer Cooperatives of the Central Bureau of Standards of the Ministry of Economic Affairs, the printed number pair / »'\ Explanation * 10 Substrate support element 12 Air duct 14 Shoulder 1 6 Edge of the inner ring Part 18 Substrate 20 Reaction chamber 22 Substrate support element 24 Gas cleaning duct 26 Side wall 28 Upper cover 30 Bottom wall 32 Closed air 34 Air inlet 36 Shower head 38 Upper surface 40 Gas channel 4 1 Vertical axis 42 Shoulder 44 Orifice cover 46 Inside Vertical wall paper size applies to Chinese National Standard (CNS) Λ4 specification (21 × 297 mm) A7 B7 Printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs 5. Description of the invention () 48 Outer vertical wall 49 Alignment surface 50 Support plate 52 Purge gas channel 53 Outer surface 54 Outer surface of support element 2 2 56 Ventilation hole 58 Lower 60 Recess 62 62 Latch 64 Lower surface 66 Clear air hole 68 Inner ring edge 70 Substrate 72 Inner base 74 Outer base 76 Recess 78 net The lower surface of the air duct 84 septum 86 The lower surface of the inner edge of the clean air duct Detailed description of the invention: Figure 2 is a cross-sectional view of the reaction chamber 20, showing a substrate support element 22 and the clean air duct 24 of the present invention . Figure 3 is a partial exploded view of the equipment in Figure 2. Generally, the deposition chamber 20 includes a sidewall 26, a lid 28 and a bottom wall 30 to form a closed space 32. The process gas flowing into the upper air inlet (ini et) 34 is discharged into the reaction chamber through a shower head 36 located above the reaction chamber. A vertically movable substrate support element 22 (usually referred to as a susceptor) Or heater) is configured to pass through the bottom wall of the reaction chamber and includes an upper surface 38 supporting the substrate. The purge gas is introduced into the reaction chamber through a gas passage 40 located in the substrate supporting element, and then is transmitted to the edge of the substrate between the edge of the supporting element 22 and the clean gas duct 24. Exhaust system (not shown) discharges gas into the reaction chamber_Earth_ This paper size applies to China National Standard (CNS) A4 (210X 297 mm). Y. Installation ---; ---_-- Order ------ line (please read the precautions on the back before filling this page) '. A7 B7 Printed by the Consumers' Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs. Vacuum ring household
此基板支撐元件2 2係士 R 、由反應室中的祐板（aluminum plate)所構成，且位於一垂古♦ 货直轉轴41上，此支撐元件22 包含一在肩部42圍繞的加埶 ，'、益遮革44，加熱器遮罩44 包含一内垂直壁46以及— 4有的支撐板5 0的外垂直壁 48，此加熱器遮罩44的内垂亩辛 ’直壁46定義出位於其外表面 53 ’以及肩部42之上的支枰一从 ~ tl件2 2的外表面5 4之間的 一淨化氣體通道52。此加埶突w宠 ·、，、杰逦罩44牢固於支撐元件的 肩邵’籍由其下表面向下延仙η τ 伸且匹’配於支撐元件肩部的凹 處。此加熱器遮罩 44係ffi ^ 、以避免加熱器遮罩徑向膨脹 (radial expansi〇n)時產生的 ^ ^(positional movement)0 j)v 熱器遮罩44的外壁48“於支撐元件的外丨s，而且向肩 部42 @表面上方和下方延伸至約為支撐元件的上表面 3 8。加熱器遮罩44的外壁48 P彼 As ,. „ . 1 土 供一傾斜的淨氣導管對準 面^用以使淨氣導管對準支撐元件。此加熱器遮罩係設 计來避免支撐兀件22形成沉積物，且提供一例行維修時 易於更換的表面。此加熱器遮罩的外壁48定義出數個通 風孔（vent hole)56，用以使淨化氣體經由此通過，而且進 入反應室中的下部58。加熱器遮罩的的支撐板5〇定義出 一個或多個凹處（recess)60’用以接收或對準位於淨氣導管 之下表面64的一個或數個拴鎖（pin)62。 淨氣導管24 —般為含有數個淨氣孔洞66的環狀物， 如第3至第5圖所示’此數個淨氣孔洞66環繞於此環狀 物的内圈邊緣。此環狀物包含一位於基板7〇邊换. <緣 < 上的 第9頁 本紙張尺度適用中國國家標準（CNS ) Λ4規格（210Χ 297公釐） (請先閱讀背而之注意事項再填寫本頁) -s° il. 經濟部中央標準局貝工消费合作社印製 A7 B7 五、發明説明（） 内緣環（inner a„nular lip)68。一内部基座base P〇rt丨on)72位於支撐元件肩部42之上，而此支撐元件肩部 42又位於數個拴鎖（pin)62之上，此數個拴鎖（pin)62係位 於淨氣導管24的下表面64以及加熱器遮罩44的凹處上 (如第二圖所7F )’或是位於支撐元件肩部4 2上（如第四圖 所示）。提供一外部基座（outer base porti〇n)74，當支撐元 件降下以更換基板或反應室間置（idle)時，用以支撐反應 室中的淨氣導管24 °凹處76位於内部基座與外部基座間 之淨氣導管的下表面7 8 ’當反應室中的支搏元件於製程中 上升時’用以接收加熱器遮罩44的外壁48。此凹處76 包含數種角度的表面，用以使淨氣導管對準加熱器遮罩44 的外壁4 8。當支撐元件在反應室中垂直移動時，此凹處 7 6接收加熱器遮罩的外壁4 8，並且當支轉元件在反麻室 中連續移動時自行對準。而且，當支撐元件垂直向上移動 時，藉由支撐元件此内部基座7 2的内表面成一角度地對 準基板，如同淨氣導管對準加熱器遮罩44 一般。 數個淨氣孔洞66(使用200釐米的基板時，約有24〇 個）穿過淨氣導管的内圈邊緣6 8而形成在製程時放置基板 邊緣之處。淨氣孔洞66能使淨化氣體通過基板的邊緣 80 ’以形成一氣體阻障牆（gas barrier wall)於基板的邊緣 處，此氣體阻障牆避免沉積氣體環繞於基板的邊緣以及避 免沉積氣體來到背面。此淨氣孔洞6 6成一 3 0至6 5度角（由 水平面算起）的配置，用以使淨化氣體由基板的邊緣吹向 反應室的外圍。雖然其他適合的材質也可以，但是此淨氣 第10頁 本紙張尺度適用中國國家標準（CNS ) Λ4規格（210X 297公楚) I...... - - - IV - ^^1 —1— - - - - I (請先閱讀背而之注意事項再填寫本頁)The substrate supporting element 22 is composed of an aluminum plate in a reaction chamber, and is located on a vertical cargo rotating shaft 41. The supporting element 22 includes an additional埶, ', Yi cover leather 44, the heater cover 44 includes an inner vertical wall 46 and-4 of the support plate 50 outer vertical wall 48, the inner wall of this heater cover 44 straight wall 46 A purge gas passage 52 is defined between the outer surface 53 ′ and the shoulder 42 above the outer surface 54 of the t-piece 2 2. As a result, the shoulder cover 44 is firmly fixed to the shoulder of the supporting element, and extends downward from the lower surface η τ and is fitted to the recess of the shoulder of the supporting element. This heater shield 44 is ^^ to avoid the positional movement of the heater shield when it expands radially. (J) v The outer wall 48 of the heater shield 44 is attached to the supporting element. Outer side, and extend to the shoulder 42 @ above and below the surface to approximately the upper surface of the support element 38. The outer wall 48 of the heater cover 44 is as high as 1. The catheter alignment surface ^ is used to align the clean air catheter with the support element. This heater shield is designed to prevent deposits from forming on the support members 22 and to provide a surface that can be easily replaced during routine maintenance. The outer wall 48 of the heater shield defines a number of vent holes 56 for passing purified gas therethrough and entering the lower portion 58 in the reaction chamber. The support plate 50 of the heater shield defines one or more recesses 60 'for receiving or aligning one or more pins 62 located on the lower surface 64 of the air cleaner duct. The clean air duct 24 is generally a ring containing a plurality of clean air holes 66, as shown in Figs. 3 to 5 'The clean air holes 66 surround the edge of the inner ring of the ring. This ring contains a substrate located on the 70 side of the substrate. ≪ Edge > on page 9 This paper is sized for the Chinese National Standard (CNS) Λ4 specification (210 × 297 mm) (Please read the precautions below) (Fill in this page again) -s ° il. Printed by the Central Standards Bureau of the Ministry of Economic Affairs, Shellfish Consumer Cooperative, printed A7 B7 V. Description of the invention () inner a „nular lip” 68. An internal base base 〇rt 丨on) 72 is located on the support element shoulder 42, and the support element shoulder 42 is located on a plurality of pins 62, which are located on the lower surface of the air cleaning duct 24 64 and the recess of the heater cover 44 (as shown in the second figure 7F) 'or on the shoulder 42 of the support element (as shown in the fourth figure). An outer base (outer base port) is provided. ) 74, when the supporting element is lowered to replace the substrate or the reaction chamber is idle, the air duct 24 ° for supporting the reaction chamber is located at the lower surface of the air duct between the internal base and the external base 7 8 'When the pacing element in the reaction chamber rises during the process' to receive the outer wall 48 of the heater shield 44. This recess 76 Contains several angled surfaces for aligning the clean air duct with the outer wall 4 of the heater shield 44. This recess 7 6 receives the outer wall 4 of the heater shield when the support element is moved vertically in the reaction chamber 8 and self-alignment when the supporting element moves continuously in the anti-anaesthesia chamber. Moreover, when the supporting element moves vertically upward, the inner surface of the internal base 72 is aligned at an angle to the substrate by the supporting element as if The clean air duct is aligned with the heater cover 44. Several clean air holes 66 (approximately 240 when using a 200 cm substrate) pass through the inner ring edge 6 8 of the clean air duct to form a substrate during the manufacturing process. At the edge, the clean air hole 66 can pass the purified gas through the edge 80 'of the substrate to form a gas barrier wall at the edge of the substrate. The gas barrier wall prevents the deposition gas from surrounding the edge of the substrate and Avoid the deposition gas from coming to the back. This clean air hole is arranged at an angle of 30 to 65 degrees (calculated from the horizontal plane), so that the purification gas is blown from the edge of the substrate to the periphery of the reaction chamber. Although other suitable Material also However, this paper on page 10 applies the Chinese National Standard (CNS) Λ4 specification (210X 297 Gongchu) I ......---IV-^^ 1 —1—----I (Please read the precautions before filling this page)
.IT A7 五、發明説明（） 經濟部中央標準局員工消費合作社印製 導i以及加熱器遮罩最好是以不銹鋼製成。 一個或多個隔墊（spacing pad)84置於淨氣導管内圈邊 緣6 8的「表面8 6，用以避免淨氣導管内圈邊緣6 8的下表 面與基板70的上表面所定義出的縫隙（gap)關閉ci〇sure。 最好疋淨礼導管與基板並無接觸，然而，如果内圈邊緣的 才又衫環（shadow nng)接近基板的表面，—個或多個隔墊84 將可維持淨化氣體通道的整體性（jntegrity)。隔墊84高度 的較佳範圍是1至10密爾（mil)。 支知·元件22包含一真空爽具（vacuunlchuck)，用以使 製程中基板可牢固於此支撐元件上，其他種類的夾具或固 疋裝置也可用於使基板牢固於此支撐元件。此真空夹具可 使基板牢固於此支撐元件上而不接觸到淨氣導管。此真空 夾具亦顯π出可改善基板溫度的均勻性、薄膜的均勻性、 在反應玄中產生較少的微粒以及避免基板與淨氣導管或 基板與支撐元件之間的橋接（bridging)。 在運作時’經由支撐元件22傳送淨化氣體至環型通 运52，此環型通道52係位於加熱器遮罩44與支撐元件 22的外表面之間。經由通道傳送淨化氣體至基板7〇的背 面以及越過基板7 0的側面。然後大部分的淨化氣體經由 淨氣孔洞66以某種角度向外流出，此向外的淨化氣體可 避免干擾基板上的沉積物。部份的淨化氣體流過淨氣導管 的底下，然後流過加熱器遮罩中的排氣孔（vent h〇le)56 , 用以避免反應室的底邵生成沉積物。而且，少部份的淨化 氣體向外流入淨氣導管的内圏邊緣68與基板7〇之間的反 ____第11頁 本紙張尺度適用中國國家標準（CNS ) Λ4规格（2丨OX297公廣） (請先閱讀背而之注意事項再填寫本頁) %.IT A7 V. Description of Invention () The printed guides and heater shields of the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs are preferably made of stainless steel. One or more spacing pads 84 are placed on the "surface 8 6" of the inner ring edge 6 8 of the clean air duct, so as to avoid the lower surface of the inner ring edge 6 8 of the clean air duct and the upper surface of the substrate 70 being defined The gap closes the cisure. It is best to clean the catheter and the substrate without contact. However, if the shadow nng on the edge of the inner ring is close to the surface of the substrate, one or more septa 84 Will maintain the integrity of the purification gas channel (jntegrity). The preferred range of the height of the septum 84 is 1 to 10 mils. The element 22 includes a vacuum chuck (vacuunlchuck) for use in the manufacturing process. The substrate can be firmly fixed on the support element, and other kinds of clamps or fixing devices can also be used to secure the substrate to the support element. This vacuum fixture can make the substrate firmly on the support element without contacting the air purification duct. This vacuum The fixture also shows that it can improve the uniformity of the substrate temperature, the uniformity of the thin film, generate fewer particles in the reaction cavity, and avoid bridging between the substrate and the clean air duct or between the substrate and the support element. 'Via support element The purge gas is transmitted to the ring-shaped passage 52 by the piece 22, and the ring-shaped channel 52 is located between the heater shield 44 and the outer surface of the support member 22. The purge gas is transmitted to the back surface of the substrate 70 through the channel and across the substrate 70. Then, most of the purified gas flows out through the clean gas hole 66 at an angle. This outward clean gas can avoid interfering with the deposits on the substrate. Part of the clean gas flows under the clean gas duct. It then flows through vent holes 56 in the heater shield to avoid the formation of deposits at the bottom of the reaction chamber. Moreover, a small part of the purification gas flows outward into the inner edge of the clean air duct. The inverse between 68 and substrate 〇 __page 11 This paper size is applicable to Chinese National Standard (CNS) Λ4 specification (2 丨 OX297 public broadcasting) (Please read the precautions before filling this page)%
*1T 線 經濟部中央標準扃員工消費合作社印裝 A7 —_ B7 ----— -----______ 五、發明説明（） 應室。 流過淨氣孔洞66的淨化氣體主體，右 A .. .. ,0 i基板的邊緣提 供一氣體阻障牆，用以避免基板的邊緣 X砟面生成 >儿槓 物。淨氣導管的内圈邊緣68與基板之間的淨化氣體流更 可避免基板的邊緣生成沉積物。流經通道5 2的爭化氣俨 對於避免基板的背面生成沉積物亦有助益。 必須控制淨氣導管與基板間傳送之 〜亇化氣體的流 速’以避免對靠近基板邊緣區域的沉積均 』9度造成負面效 應’因為淨化氣體會阻斷（disrupting)基板表面上的製程氣 體。為達到沉積的均勻性，淨化氣體的流速須根據淨氣導 管與基板之間的縫隙尺寸來調整。一般來說，淨化氣體的 流速約在100 seem至丨0000 seem之間’較佳的範圍是介 於500 sccm至3000 sccm之間。淨氣導管之内圏邊緣 的下表面8 6與基板7 0之間的縫隙的較佳範圍是維持在5 至25密爾（mil)之間，更好的是維持在10至20密爾（mil) 之間’端视可達最佳基板邊緣殘留區域且不犧牲沉積均勻 性的淨化氣體流速而定。例如’在一個處理2 0 0釐米基板、 具有製裎氣體流速500 seem以及壓力維持在25托爾（Torr) 的反應室中，淨化氣體流速約為2200 seem時的縫隙約為 1 0密爾（mil)，以達到2.5%的均勻度Rs，同時具有完整的 基板背面以及斜邊（bevel)殘留區域，以及約為1至1.5釐 米的邊緣殘留區域。均勻度係量測基租中央至基板邊 緣的變化量。同樣反應室條件的第二個例子，為達到2 ·5 0/〇 的均勻度Rs，同時具有完整的基板背面和邊緣殘餘邵份 第 12_ϊ_ ______— „ 一 ^^5用+國$標準) Λ4規格（2丨〇7^楚) (請先閱讀背面之注意事項再填寫本頁) -5 線 Λ7 B7 經濟部中央標準局員工消费合作杜印製 五、發明説明（ (excision)，淨化氣體流速約& 14〇〇 sccm時維持一約 為2 0密爾（m i 1)的縫隙是較佳的。 基板溫度為另-需要控制以達到均勻沉積的製程條 件，因為典型上沉積速率是隨著基板溫度改變的函數。— 般來說，沉積速率隨著基板溫度的增加而增加。對於凑呂的 沉積製程，較佳基板溫度是維持在攝氏17〇至26〇度之 間。 在基板上的背面氣體壓力亦會影響溫度分佈的均勾 性然後影響沉積的均勾《’一般背面氣體壓力是維持在i 至丨〇托爾(—)’改變背面氣體壓力可將沉積厚度的輪麻 (pronu)由中央薄、邊緣厚（低背面氣體壓力，小於2托爾） 改變至中央厚、邊緣薄(高背面氣體壓力，大於2托爾）。 較佳的背面氣體壓力是維持纟丨_5 i 5托爾(T〇rr)，以達 到良好的均勻度Rs(2%至3%)。 種監視沉積均勻度的方法是量測基板電阻的均 勻度，其表示成偏差（deviation)的百分比。一般來說，良 好的/冗積均勻度疋在3楚米處的邊緣殘餘區域，量測到低 於5%的Rs值。較佳的Rs值百分比是低於3%。為避免背 面與斜角（bevel)的沉積物且同時具有最小的邊緣殘餘區 域本么明彳疋供一當基板表面的邊緣殘餘區域減小時，具 有數個淨氣孔洞的淨氣導管，用以在基板的背面與邊緣的 鄰接處維持一淨化氣體。然而，淨化氣體的流速必須能在 基板的背面與斜角（bevel)的鄰接處提供—足夠的淨化氣 體濃度，以避免沉積物生成於其上。為達到想要的邊緣殘 第13頁 本紙張尺度迺用中國國家標準（CNS )以規格（2丨〇><297公釐） (請先閲讀背而之注意事項再填寫本頁> 'S1 線 iL、發明説明（ A7 B7 經濟部中央標準局貝工消費合作杜印製 餘區域以及Rs均勻度’需要的淨化氣體流速主要視淨氣 孔洞的尺寸、淨氣孔洞的數目以及淨氣孔洞的角度，以及 基板與淨氣導管間的距離或縫隙而調整。 例如’對於一個具有240個直徑為50密爾，45度向 外且距離基板表面1 〇密爾（m i丨）孔洞的淨氣導管而言，淨 化氣體流速大於2 1 00 seem是較能夠避免基板的背面與斜 角（bevel)生成沉積物’以及達到約為3%的Rs均勻度同時 邊緣殘留區域為1釐米。第二個例子，對於一個具有1 8 0 個直徑60密爾，30度向外且距離基板表面8密爾（mil)的 淨氣導管而言’淨化氣體流速大於2 9 0 0 s c c m是較能夠避 免基板的背面與斜角（bevel)生成沉積物，以及達到約為 4%的Rs均勻度’同時邊緣殘留區域為1釐米。一般來說， 較高的淨化氣體流速以及較大的縫隙距離可更有效率地 避免基板的背面與斜角（bevel)生成沉積物，以及達到較佳 的基板邊緣殘留區域’然而淨化氣體的流速亦會影響到均 勻度Rs ’因此淨化氣肖a的流速取好是保持在恰可達到基板 的背面與邊緣殘留區域的最小需求，如此均勻度Rs為最 恰當。 雖然以上所述係針對本發明之較佳實施例，本發明之 其他實施例可在不悖離本發明基本範圍之下被想到，本發 明之基本範圍係由以下之申請專利範園所定出。 (錆先閲讀背面之注意事項再填商本頁) 線 第U頁 表紙張尺度適用中國國家標率（CNS ) 規格（210X297公釐）* 1T line Central Standard of the Ministry of Economy 印 Printed by employee consumer cooperatives A7 —_ B7 ----— -----______ 5. Description of invention () Application room. The main body of the purge gas flowing through the clean air hole 66, a right edge of the substrate A provides a gas barrier wall to avoid the generation of a > bar on the edge of the substrate. The flow of purge gas between the inner ring edge 68 of the clean air duct and the substrate can further prevent the formation of deposits on the edge of the substrate. The scavenging gas flowing through the channel 5 2 is also helpful to avoid deposits on the back surface of the substrate. It is necessary to control the flow rate of the tritium gas transferred between the clean gas duct and the substrate 'to avoid negative effects on the deposition near the edge of the substrate "9 degrees" because the purge gas will disrupt the process gas on the substrate surface. To achieve uniform deposition, the flow rate of the purge gas must be adjusted according to the size of the gap between the clean air duct and the substrate. Generally, the flow rate of the purified gas is between about 100 seem and 10,000 seem. The preferred range is between 500 sccm and 3000 sccm. The preferred range of the gap between the lower surface 86 of the inner ridge edge of the clean air duct and the substrate 70 is between 5 and 25 mils, and more preferably between 10 and 20 mils ( mil) depends on the flow rate of the purge gas that can reach the optimal substrate edge residual area without sacrificing deposition uniformity. For example, 'In a reaction chamber that processes a 200-cm substrate, has a purge gas flow rate of 500 seem, and a pressure maintained at 25 Torr, the clearance of the purge gas flow rate of about 2200 seem is about 10 mils ( mil) to achieve a uniformity Rs of 2.5%, while having a complete substrate back surface and a bevel residual area, and an edge residual area of about 1 to 1.5 cm. The uniformity measures the change from the center of the base to the edge of the substrate. The second example of the same reaction chamber conditions, in order to achieve a uniformity Rs of 2 · 50 / 〇, and at the same time have a complete substrate back and edge residues. 12_ϊ_ ______— „^^ 5 uses + country $ standard) Λ4 Specifications (2 丨 〇7 ^ Chu) (Please read the precautions on the back before filling out this page) -5 Line Λ7 B7 Printed by the consumer cooperation of the Central Bureau of Standards of the Ministry of Economic Affairs 5. Description of the invention (excision), purification gas flow rate It is better to maintain a gap of about 20 mil (mi 1) at about < 1 400 sccm. The substrate temperature is another-need to be controlled to achieve uniform deposition process conditions, because the deposition rate is typically A function of substrate temperature change. — In general, the deposition rate increases as the substrate temperature increases. For Minori ’s deposition process, the preferred substrate temperature is maintained between 170 and 26 ° C. On the substrate The back gas pressure also affects the uniformity of the temperature distribution and then affects the uniformity of the deposition. "'General back gas pressure is maintained at i to 丨 Tor (-)'. Changing the back gas pressure can change the thickness of the pronu ) From the central thin, Edge thickness (low back gas pressure, less than 2 Torr) Change to thick center and thin edges (high back gas pressure, more than 2 Torr). The best back gas pressure is to maintain 纟 丨 _5 i 5 Torr (T 〇rr) to achieve a good uniformity Rs (2% to 3%). One way to monitor the uniformity of the deposition is to measure the uniformity of the substrate resistance, which is expressed as a percentage of deviation. Generally speaking, good / Redundant uniformity 残余 In the marginal residual area at 3 cm, an Rs value of less than 5% is measured. The preferred Rs value percentage is less than 3%. To avoid backside and bevel Sediment with minimal edge residual area at the same time. When the residual area of the edge of the substrate surface is reduced, the air duct with several air holes is used to maintain the abutment of the back surface of the substrate and the edge. A purge gas. However, the flow rate of the purge gas must be provided on the back of the substrate adjacent to the bevel—sufficient purge gas concentration to prevent deposits from forming on it. To achieve the desired edge residue 13 pages of this paper size using China Standards (CNS) according to specifications (2 丨 〇> <297 mm) (Please read the precautions on the back before filling out this page> "S1 line iL, invention description (A7 B7 Central Bureau of Standards, Ministry of Economic Affairs) The industrial and consumer cooperation Du printed surplus area and the uniformity of Rs' required purification gas flow mainly depends on the size of the net air holes, the number of net air holes, the angle of the net air holes, and the distance or gap between the substrate and the net air duct. For example, 'For a clean air duct with 240 holes with a diameter of 50 mils, 45 degrees outward and 10 mils (mi 丨) from the surface of the substrate, the purge gas flow rate greater than 2 1 00 seems to be more capable Avoid the formation of deposits on the back of the substrate and the bevel, and achieve an Rs uniformity of about 3% while the edge residual area is 1 cm. The second example, for a clean air duct with 180 diameters of 60 mils, 30 degrees outward and 8 mils away from the surface of the substrate, 'purge gas flow rate greater than 290 sccm is more able Avoid the formation of deposits on the back surface of the substrate and bevel, and achieve an Rs uniformity of about 4%, while the residual edge area is 1 cm. Generally, a higher purge gas flow rate and a larger gap distance can more effectively avoid the formation of deposits on the back surface of the substrate and the bevel, and achieve a better substrate edge residual area. However, the purge gas flow rate It will also affect the uniformity Rs'. Therefore, the flow rate of the purified gas Xiao a is preferably maintained to meet the minimum requirements of the back surface and the edge residual area of the substrate. Such uniformity Rs is the most appropriate. Although the above is directed to the preferred embodiments of the present invention, other embodiments of the present invention can be conceived without departing from the basic scope of the present invention. The basic scope of the present invention is determined by the following patent application parks. (锖 Please read the notes on the back before filling in this page) Thread Page U The paper size of the table applies the Chinese National Standard (CNS) specification (210X297 mm)