JP6623056B2 - 配線基板、半導体装置 - Google Patents
配線基板、半導体装置 Download PDFInfo
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- JP6623056B2 JP6623056B2 JP2015244936A JP2015244936A JP6623056B2 JP 6623056 B2 JP6623056 B2 JP 6623056B2 JP 2015244936 A JP2015244936 A JP 2015244936A JP 2015244936 A JP2015244936 A JP 2015244936A JP 6623056 B2 JP6623056 B2 JP 6623056B2
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- insulating layer
- layer
- wiring layer
- wiring
- treatment film
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- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
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- H01L2224/81001—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector involving a temporary auxiliary member not forming part of the bonding apparatus
- H01L2224/81005—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector involving a temporary auxiliary member not forming part of the bonding apparatus being a temporary or sacrificial substrate
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- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/81009—Pre-treatment of the bump connector or the bonding area
- H01L2224/81022—Cleaning the bonding area, e.g. oxide removal step, desmearing
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- H01L2224/8138—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/81399—Material
- H01L2224/814—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/81438—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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- H01L2224/83001—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector involving a temporary auxiliary member not forming part of the bonding apparatus
- H01L2224/83005—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector involving a temporary auxiliary member not forming part of the bonding apparatus being a temporary or sacrificial substrate
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- H01L2224/831—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus
- H01L2224/83102—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus using surface energy, e.g. capillary forces
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- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
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- H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
- H01L2224/92—Specific sequence of method steps
- H01L2224/921—Connecting a surface with connectors of different types
- H01L2224/9212—Sequential connecting processes
- H01L2224/92122—Sequential connecting processes the first connecting process involving a bump connector
- H01L2224/92125—Sequential connecting processes the first connecting process involving a bump connector the second connecting process involving a layer connector
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
- H01L23/3128—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation the substrate having spherical bumps for external connection
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- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
- H01L23/49816—Spherical bumps on the substrate for external connection, e.g. ball grid arrays [BGA]
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- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Geometry (AREA)
- Manufacturing & Machinery (AREA)
- Wire Bonding (AREA)
- Electric Connection Of Electric Components To Printed Circuits (AREA)
- Structure Of Printed Boards (AREA)
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| Application Number | Priority Date | Filing Date | Title |
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| JP2015244936A JP6623056B2 (ja) | 2015-12-16 | 2015-12-16 | 配線基板、半導体装置 |
| US15/367,264 US10109580B2 (en) | 2015-12-16 | 2016-12-02 | Wiring board and semiconductor device |
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| Application Number | Priority Date | Filing Date | Title |
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| JP2015244936A JP6623056B2 (ja) | 2015-12-16 | 2015-12-16 | 配線基板、半導体装置 |
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| JP2017112199A JP2017112199A (ja) | 2017-06-22 |
| JP2017112199A5 JP2017112199A5 (enExample) | 2018-12-13 |
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| JP2001060602A (ja) * | 1999-08-23 | 2001-03-06 | Fuji Electric Co Ltd | フリップチップ実装構造及びその製造方法 |
| JP5117692B2 (ja) * | 2006-07-14 | 2013-01-16 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
| KR20080042012A (ko) * | 2006-11-08 | 2008-05-14 | 산요덴키가부시키가이샤 | 소자 탑재용 기판, 그 제조 방법, 반도체 모듈 및 휴대기기 |
| JP5003812B2 (ja) | 2009-12-10 | 2012-08-15 | イビデン株式会社 | プリント配線板及びプリント配線板の製造方法 |
| US9815149B2 (en) * | 2011-02-25 | 2017-11-14 | International Business Machines Corporation | Flux composition and techniques for use thereof |
| US8923008B2 (en) * | 2011-03-08 | 2014-12-30 | Ibiden Co., Ltd. | Circuit board and method for manufacturing circuit board |
| TWI533424B (zh) | 2012-04-26 | 2016-05-11 | 旭德科技股份有限公司 | 封裝載板 |
| JP2014146638A (ja) * | 2013-01-28 | 2014-08-14 | Toray Ind Inc | 半導体装置の製造方法 |
| JP2015138820A (ja) * | 2014-01-21 | 2015-07-30 | イビデン株式会社 | プリント配線板とその製造方法 |
| JP6691451B2 (ja) * | 2015-08-06 | 2020-04-28 | 新光電気工業株式会社 | 配線基板及びその製造方法と電子部品装置 |
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| US20170179022A1 (en) | 2017-06-22 |
| US10109580B2 (en) | 2018-10-23 |
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