JP6615348B2 - 横方向拡散金属酸化物半導体電界効果トランジスタ - Google Patents
横方向拡散金属酸化物半導体電界効果トランジスタ Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims description 25
- 230000005669 field effect Effects 0.000 title claims description 23
- 229910044991 metal oxide Inorganic materials 0.000 title claims description 22
- 150000004706 metal oxides Chemical class 0.000 title claims description 22
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 19
- 229920005591 polysilicon Polymers 0.000 claims description 19
- 238000009792 diffusion process Methods 0.000 claims description 11
- 239000002184 metal Substances 0.000 claims description 7
- 239000000758 substrate Substances 0.000 claims description 6
- 210000000746 body region Anatomy 0.000 claims description 5
- 238000002513 implantation Methods 0.000 claims description 3
- 230000015556 catabolic process Effects 0.000 description 14
- 230000005684 electric field Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000005457 optimization Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 239000007943 implant Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
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Description
Claims (12)
- 基板と、ゲートと、ソースと、ドレインと、ボディ領域と、ソースとドレインの間に配置されたフィールド酸化物領域と、基板に形成された第1のウェル領域及び第2のウェル領域と、を備える、横方向拡散金属酸化物半導体電界効果トランジスタであって、
第1のウェル領域は、第1の導電型を備え、第2のウェル領域は、第2の導電型を備え、第1の導電型と第2の導電型は反対の導電型であり、
ソース及びボディ領域は、第2のウェル領域に配置され、
ドレインは、第1のウェル領域に配置され、
ゲートの下の第2のウェル領域は、第2のウェル領域に複数の第1の導電型のゲートドープ領域が設けられ、
ゲートのポリシリコンゲートは、マルチセグメント構造を有し、
セグメントは、お互いから分離され、
ゲートドープ領域のそれぞれは、ポリシリコンゲートの2つのセグメントの間の間隙の下に配置され、
ゲートドープ領域のそれぞれは、ゲートドープ領域の両側面に配置された、ポリシリコンゲートの2つのセグメントの1つである、ソース側のポリシリコンゲートのセグメントと電気的に連結される、横方向拡散金属酸化物半導体電界効果トランジスタ。 - ゲートのポリシリコンゲートのセグメントは、フィールド酸化物領域まで延在する、請求項1に記載の横方向拡散金属酸化物半導体電界効果トランジスタ。
- さらに、金属配線層を備え、ゲートドープ領域のそれぞれは、金属配線層を介して、ポリシリコンゲートと電気的に連結される、請求項1に記載の横方向拡散金属酸化物半導体電界効果トランジスタ。
- ポリシリコンゲートのそれぞれの隣接する2つのセグメントは、さらにソースとドレインの間のチャネル電流と垂直な方向に、複数のゲートドープ領域が設けられている、請求項1に記載の横方向拡散金属酸化物半導体電界効果トランジスタ。
- ソースとドレインの間のチャネル電流の方向に隣接するゲートドープ領域の間の間隔は、0.8μm以下である、請求項1に記載の横方向拡散金属酸化物半導体電界効果トランジスタ。
- 3から5セットのゲートドープ領域は、ソースとドレインの間のチャネル電流の方向に設けられ、ゲートドープ領域のそれぞれのセットは、少なくとも1つのゲートドープ領域を備える、請求項1に記載の横方向拡散金属酸化物半導体電界効果トランジスタ。
- ゲートドープ領域のそれぞれのセットは、複数のゲートドープ領域を備え、それぞれのセットのゲートドープ領域のそれぞれは、ソースとドレインの間のチャネル電流に垂直な方向に配置されている、請求項6に記載の横方向拡散金属酸化物半導体電界効果トランジスタ。
- ゲートドープ領域のそれぞれは、1μmから2.5μmの幅を有する、請求項6に記載の横方向拡散金属酸化物半導体電界効果トランジスタ。
- ゲートドープ領域のそれぞれは、ピーク濃度が1.0E17/cm3から2.0E17/cm3である、請求項1に記載の横方向拡散金属酸化物半導体電界効果トランジスタ。
- ゲートドープ領域のそれぞれは、注入ドーズが0.8E13/cm2から1.5E13/cm2である、請求項9に記載の横方向拡散金属酸化物半導体電界効果トランジスタ。
- ゲートドープ領域のそれぞれは、接合深さが0.8μmである、請求項9に記載の横方向拡散金属酸化物半導体電界効果トランジスタ。
- 第1の導電型は、N型であり、第2の導電型は、P型である、請求項1に記載の横方向拡散金属酸化物半導体電界効果トランジスタ。
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Application Number | Priority Date | Filing Date | Title |
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CN201510864548.5 | 2015-11-30 | ||
CN201510864548.5A CN106816468B (zh) | 2015-11-30 | 2015-11-30 | 具有resurf结构的横向扩散金属氧化物半导体场效应管 |
PCT/CN2016/096730 WO2017092419A1 (zh) | 2015-11-30 | 2016-08-25 | 横向扩散金属氧化物半导体场效应管 |
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JP2018535559A JP2018535559A (ja) | 2018-11-29 |
JP6615348B2 true JP6615348B2 (ja) | 2019-12-04 |
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US (1) | US10505036B2 (ja) |
EP (1) | EP3385993B1 (ja) |
JP (1) | JP6615348B2 (ja) |
KR (1) | KR102144625B1 (ja) |
CN (1) | CN106816468B (ja) |
WO (1) | WO2017092419A1 (ja) |
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CN106158956B (zh) * | 2015-04-08 | 2020-02-11 | 无锡华润上华科技有限公司 | 具有resurf结构的ldmosfet及其制造方法 |
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