JP6574083B2 - ポリ（シクロヘキシルエチレン）−ポリアクリレートブロックコポリマー、その製造方法及びそれを含む物品 - Google Patents

ポリ（シクロヘキシルエチレン）−ポリアクリレートブロックコポリマー、その製造方法及びそれを含む物品 Download PDF

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Publication number
JP6574083B2
JP6574083B2 JP2014112042A JP2014112042A JP6574083B2 JP 6574083 B2 JP6574083 B2 JP 6574083B2 JP 2014112042 A JP2014112042 A JP 2014112042A JP 2014112042 A JP2014112042 A JP 2014112042A JP 6574083 B2 JP6574083 B2 JP 6574083B2
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block
block copolymer
copolymer
pche
poly
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JP2014112042A
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Japanese (ja)
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JP2014237817A5 (enExample
JP2014237817A (ja
Inventor
フィリップ・デネ・フスタッド
フランク・スティーブン・ベイツ
マーク・アンドリュー・ヒルマイヤー
ジャスティン・グレン・ケネマー
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Dow Global Technologies LLC
University of Minnesota System
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Dow Global Technologies LLC
University of Minnesota System
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    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F297/00—Macromolecular compounds obtained by successively polymerising different monomer systems using a catalyst of the ionic or coordination type without deactivating the intermediate polymer
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F293/00—Macromolecular compounds obtained by polymerisation on to a macromolecule having groups capable of inducing the formation of new polymer chains bound exclusively at one or both ends of the starting macromolecule
    • C08F293/005—Macromolecular compounds obtained by polymerisation on to a macromolecule having groups capable of inducing the formation of new polymer chains bound exclusively at one or both ends of the starting macromolecule using free radical "living" or "controlled" polymerisation, e.g. using a complexing agent
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F212/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
    • C08F212/02—Monomers containing only one unsaturated aliphatic radical
    • C08F212/04—Monomers containing only one unsaturated aliphatic radical containing one ring
    • C08F212/06—Hydrocarbons
    • C08F212/12—Monomers containing a branched unsaturated aliphatic radical or a ring substituted by an alkyl radical
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/04—Acids; Metal salts or ammonium salts thereof
    • C08F220/06—Acrylic acid; Methacrylic acid; Metal salts or ammonium salts thereof
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10—Esters
    • C08F220/12—Esters of monohydric alcohols or phenols
    • C08F220/16—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms
    • C08F220/18—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms with acrylic or methacrylic acids
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10—Esters
    • C08F220/22—Esters containing halogen
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F2438/00—Living radical polymerisation
    • C08F2438/01—Atom Transfer Radical Polymerization [ATRP] or reverse ATRP

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  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Graft Or Block Polymers (AREA)
JP2014112042A 2013-06-07 2014-05-30 ポリ（シクロヘキシルエチレン）−ポリアクリレートブロックコポリマー、その製造方法及びそれを含む物品 Expired - Fee Related JP6574083B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/912,797 US10202479B2 (en) 2013-06-07 2013-06-07 Poly(cyclohexylethylene)-polyacrylate block copolymers, methods of manufacture thereof and articles comprising the same
US13/912,797 2013-06-07

Publications (3)

Publication Number Publication Date
JP2014237817A JP2014237817A (ja) 2014-12-18
JP2014237817A5 JP2014237817A5 (enExample) 2018-08-30
JP6574083B2 true JP6574083B2 (ja) 2019-09-11

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JP2014112042A Expired - Fee Related JP6574083B2 (ja) 2013-06-07 2014-05-30 ポリ（シクロヘキシルエチレン）−ポリアクリレートブロックコポリマー、その製造方法及びそれを含む物品

Country Status (5)

Country Link
US (1) US10202479B2 (enExample)
JP (1) JP6574083B2 (enExample)
KR (1) KR101631561B1 (enExample)
CN (1) CN104231192A (enExample)
TW (1) TWI525117B (enExample)

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KR20160060223A (ko) * 2014-11-19 2016-05-30 삼성디스플레이 주식회사 미세 패턴 형성 방법
CN107428141B (zh) 2015-03-18 2019-12-03 理研科技株式会社 硬涂层层叠膜
EP3666522B1 (en) 2015-03-18 2022-07-06 Riken Technos Corporation Anti-glare hard coat laminated film
KR102551428B1 (ko) * 2015-03-18 2023-07-04 리껭테크노스 가부시키가이샤 다층 하드 코팅 필름
US10596739B2 (en) 2015-03-18 2020-03-24 Riken Technos Corporation Molded body
US11065852B2 (en) 2015-03-18 2021-07-20 Riken Technos Corporation Adhesive film
PH12017501311B1 (en) 2015-03-18 2024-07-03 Riken Technos Corp Hard coat laminate film and method for producing same
US11433651B2 (en) 2015-03-18 2022-09-06 Riken Technos Corporation Hard coat laminated film
WO2017033871A1 (ja) * 2015-08-21 2017-03-02 株式会社日本触媒 ブロック共重合体
KR102402958B1 (ko) 2015-11-11 2022-05-27 삼성전자주식회사 반도체 장치의 패턴 형성 방법 및 반도체 장치의 제조 방법
JP6599789B2 (ja) * 2015-11-25 2019-10-30 リケンテクノス株式会社 ハードコート積層フィルム
TWI745316B (zh) 2015-11-25 2021-11-11 日商理研科技股份有限公司 門體
US11774166B2 (en) 2015-11-25 2023-10-03 Riken Technos Corporation Door body
JP6644534B2 (ja) 2015-12-08 2020-02-12 リケンテクノス株式会社 ハードコート積層フィルム
JP6808746B2 (ja) 2016-02-19 2021-01-06 アベリー・デニソン・コーポレイションＡｖｅｒｙ Ｄｅｎｎｉｓｏｎ Ｃｏｒｐｏｒａｔｉｏｎ 接着剤を製造する２段階の方法及び関連組成物
EP3808800B1 (en) 2016-09-14 2022-01-05 Riken Technos Corporation Hard coat laminated film
EP3532520A1 (en) 2016-10-25 2019-09-04 Avery Dennison Corporation Block polymers with photoinitiator groups in backbone and their use in adhesive compositions
JP7064313B2 (ja) 2016-11-25 2022-05-10 リケンテクノス株式会社 ハードコート積層フィルム
JP6749502B2 (ja) 2017-02-17 2020-09-02 スリーエム イノベイティブ プロパティズ カンパニー トリブロックコポリマー
JP2018154760A (ja) * 2017-03-17 2018-10-04 東芝メモリ株式会社 パターン形成材料及びパターン形成方法
KR102676064B1 (ko) 2017-12-19 2024-06-19 애버리 데니슨 코포레이션 펜던트 관능기의 후중합 관능화
CN112203750B (zh) * 2018-06-01 2023-01-13 3M创新有限公司 包含三嵌段共聚物的多孔膜
CN116284517B (zh) * 2022-09-08 2025-06-27 上海八亿时空先进材料有限公司 一种分子量窄分布且高透光性phs树脂及其合成方法与应用

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Also Published As

Publication number Publication date
KR101631561B1 (ko) 2016-06-20
TW201509970A (zh) 2015-03-16
JP2014237817A (ja) 2014-12-18
US10202479B2 (en) 2019-02-12
US20140360975A1 (en) 2014-12-11
TWI525117B (zh) 2016-03-11
KR20140143715A (ko) 2014-12-17
CN104231192A (zh) 2014-12-24

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