CN104231192A - 聚(环己基乙烯)-聚丙烯酸酯嵌段共聚物,其制造方法及包括其的制品 - Google Patents
聚(环己基乙烯)-聚丙烯酸酯嵌段共聚物,其制造方法及包括其的制品 Download PDFInfo
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- CN104231192A CN104231192A CN201410235367.1A CN201410235367A CN104231192A CN 104231192 A CN104231192 A CN 104231192A CN 201410235367 A CN201410235367 A CN 201410235367A CN 104231192 A CN104231192 A CN 104231192A
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- OUGJKAQEYOUGKG-UHFFFAOYSA-N ethyl 2-methylidenebutanoate Chemical compound CCOC(=O)C(=C)CC OUGJKAQEYOUGKG-UHFFFAOYSA-N 0.000 description 1
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- 229920005684 linear copolymer Polymers 0.000 description 1
- 150000002641 lithium Chemical group 0.000 description 1
- VMRZYTKLQVKYKQ-UHFFFAOYSA-N lithium;1,9-dihydrofluoren-1-ide Chemical compound [Li+].C1=C[C-]=C2CC3=CC=CC=C3C2=C1 VMRZYTKLQVKYKQ-UHFFFAOYSA-N 0.000 description 1
- QCYIFDAFIXZTQO-UHFFFAOYSA-N lithium;diphenylmethylbenzene Chemical compound [Li+].C1=CC=CC=C1[C-](C=1C=CC=CC=1)C1=CC=CC=C1 QCYIFDAFIXZTQO-UHFFFAOYSA-N 0.000 description 1
- XWRJSDBMRJIGSK-UHFFFAOYSA-N lithium;phenylmethylbenzene Chemical compound [Li+].C=1C=CC=CC=1[CH-]C1=CC=CC=C1 XWRJSDBMRJIGSK-UHFFFAOYSA-N 0.000 description 1
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- CQRPUKWAZPZXTO-UHFFFAOYSA-M magnesium;2-methylpropane;chloride Chemical compound [Mg+2].[Cl-].C[C-](C)C CQRPUKWAZPZXTO-UHFFFAOYSA-M 0.000 description 1
- IWCVDCOJSPWGRW-UHFFFAOYSA-M magnesium;benzene;chloride Chemical compound [Mg+2].[Cl-].C1=CC=[C-]C=C1 IWCVDCOJSPWGRW-UHFFFAOYSA-M 0.000 description 1
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- 150000002902 organometallic compounds Chemical class 0.000 description 1
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- 230000036961 partial effect Effects 0.000 description 1
- ANRQGKOBLBYXFM-UHFFFAOYSA-M phenylmagnesium bromide Chemical compound Br[Mg]C1=CC=CC=C1 ANRQGKOBLBYXFM-UHFFFAOYSA-M 0.000 description 1
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- 125000001185 polyprenyl group Polymers 0.000 description 1
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- 150000003138 primary alcohols Chemical group 0.000 description 1
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 1
- RUOJZAUFBMNUDX-UHFFFAOYSA-N propylene carbonate Chemical compound CC1COC(=O)O1 RUOJZAUFBMNUDX-UHFFFAOYSA-N 0.000 description 1
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- 239000000377 silicon dioxide Substances 0.000 description 1
- URGAHOPLAPQHLN-UHFFFAOYSA-N sodium aluminosilicate Chemical compound [Na+].[Al+3].[O-][Si]([O-])=O.[O-][Si]([O-])=O URGAHOPLAPQHLN-UHFFFAOYSA-N 0.000 description 1
- 238000000654 solvent vapour annealing Methods 0.000 description 1
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- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F297/00—Macromolecular compounds obtained by successively polymerising different monomer systems using a catalyst of the ionic or coordination type without deactivating the intermediate polymer
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F293/00—Macromolecular compounds obtained by polymerisation on to a macromolecule having groups capable of inducing the formation of new polymer chains bound exclusively at one or both ends of the starting macromolecule
- C08F293/005—Macromolecular compounds obtained by polymerisation on to a macromolecule having groups capable of inducing the formation of new polymer chains bound exclusively at one or both ends of the starting macromolecule using free radical "living" or "controlled" polymerisation, e.g. using a complexing agent
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F212/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
- C08F212/02—Monomers containing only one unsaturated aliphatic radical
- C08F212/04—Monomers containing only one unsaturated aliphatic radical containing one ring
- C08F212/06—Hydrocarbons
- C08F212/12—Monomers containing a branched unsaturated aliphatic radical or a ring substituted by an alkyl radical
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
- C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
- C08F220/04—Acids; Metal salts or ammonium salts thereof
- C08F220/06—Acrylic acid; Methacrylic acid; Metal salts or ammonium salts thereof
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
- C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
- C08F220/10—Esters
- C08F220/12—Esters of monohydric alcohols or phenols
- C08F220/16—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms
- C08F220/18—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms with acrylic or methacrylic acids
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
- C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
- C08F220/10—Esters
- C08F220/22—Esters containing halogen
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F2438/00—Living radical polymerisation
- C08F2438/01—Atom Transfer Radical Polymerization [ATRP] or reverse ATRP
Landscapes
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- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
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- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Inorganic Chemistry (AREA)
- Graft Or Block Polymers (AREA)
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| US13/912,797 | 2013-06-07 |
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| KR (1) | KR101631561B1 (enExample) |
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| TW (1) | TWI525117B (enExample) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112203750A (zh) * | 2018-06-01 | 2021-01-08 | 3M创新有限公司 | 包含三嵌段共聚物的多孔膜 |
| CN116284517A (zh) * | 2022-09-08 | 2023-06-23 | 上海八亿时空先进材料有限公司 | 一种分子量窄分布且高透光性phs树脂及其合成方法与应用 |
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| JP6446195B2 (ja) * | 2013-07-31 | 2018-12-26 | 東京応化工業株式会社 | 相分離構造体の製造方法、パターン形成方法及び微細パターン形成方法 |
| KR20160060223A (ko) * | 2014-11-19 | 2016-05-30 | 삼성디스플레이 주식회사 | 미세 패턴 형성 방법 |
| WO2016147716A1 (ja) | 2015-03-18 | 2016-09-22 | リケンテクノス株式会社 | 粘着フィルム |
| KR102551428B1 (ko) * | 2015-03-18 | 2023-07-04 | 리껭테크노스 가부시키가이샤 | 다층 하드 코팅 필름 |
| PH12017501311B1 (en) | 2015-03-18 | 2024-07-03 | Riken Technos Corp | Hard coat laminate film and method for producing same |
| US11433651B2 (en) | 2015-03-18 | 2022-09-06 | Riken Technos Corporation | Hard coat laminated film |
| US10780685B2 (en) | 2015-03-18 | 2020-09-22 | Riken Technos Corporation | Hard coat laminated film |
| EP3663089B1 (en) | 2015-03-18 | 2024-07-10 | Riken Technos Corporation | Molded body |
| KR101970093B1 (ko) | 2015-03-18 | 2019-04-17 | 리껭테크노스 가부시키가이샤 | 방현성 하드 코트 적층 필름 |
| WO2017033871A1 (ja) * | 2015-08-21 | 2017-03-02 | 株式会社日本触媒 | ブロック共重合体 |
| KR102402958B1 (ko) | 2015-11-11 | 2022-05-27 | 삼성전자주식회사 | 반도체 장치의 패턴 형성 방법 및 반도체 장치의 제조 방법 |
| TWI745316B (zh) | 2015-11-25 | 2021-11-11 | 日商理研科技股份有限公司 | 門體 |
| US11774166B2 (en) | 2015-11-25 | 2023-10-03 | Riken Technos Corporation | Door body |
| JP6599789B2 (ja) * | 2015-11-25 | 2019-10-30 | リケンテクノス株式会社 | ハードコート積層フィルム |
| JP6644534B2 (ja) | 2015-12-08 | 2020-02-12 | リケンテクノス株式会社 | ハードコート積層フィルム |
| CN109312194B (zh) | 2016-02-19 | 2021-11-23 | 艾利丹尼森公司 | 用于加工粘合剂和相关组合物的两阶段方法 |
| CN109922959B (zh) | 2016-09-14 | 2021-01-12 | 理研科技株式会社 | 硬质涂层层压膜 |
| WO2018081268A1 (en) | 2016-10-25 | 2018-05-03 | Avery Dennison Corporation | Block polymers with photoinitiator groups in backbone and their use in adhesive compositions |
| JP7064313B2 (ja) | 2016-11-25 | 2022-05-10 | リケンテクノス株式会社 | ハードコート積層フィルム |
| EP3583144B1 (en) | 2017-02-17 | 2020-10-28 | 3M Innovative Properties Company | Triblock copolymers |
| JP2018154760A (ja) * | 2017-03-17 | 2018-10-04 | 東芝メモリ株式会社 | パターン形成材料及びパターン形成方法 |
| CN111491967B (zh) | 2017-12-19 | 2023-05-02 | 艾利丹尼森公司 | 侧基官能团的聚合后官能化 |
Citations (1)
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| WO2012036121A1 (ja) * | 2010-09-14 | 2012-03-22 | 東京応化工業株式会社 | 下地剤及びブロックコポリマーを含む層のパターン形成方法 |
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| US4098980A (en) | 1976-06-24 | 1978-07-04 | The Goodyear Tire & Rubber Company | Non-aqueous dispersion polymerization of conjugated diolefins |
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2013
- 2013-06-07 US US13/912,797 patent/US10202479B2/en not_active Expired - Fee Related
-
2014
- 2014-05-29 CN CN201410235367.1A patent/CN104231192A/zh active Pending
- 2014-05-30 JP JP2014112042A patent/JP6574083B2/ja not_active Expired - Fee Related
- 2014-06-03 KR KR1020140067715A patent/KR101631561B1/ko not_active Expired - Fee Related
- 2014-06-06 TW TW103119677A patent/TWI525117B/zh not_active IP Right Cessation
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2012036121A1 (ja) * | 2010-09-14 | 2012-03-22 | 東京応化工業株式会社 | 下地剤及びブロックコポリマーを含む層のパターン形成方法 |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112203750A (zh) * | 2018-06-01 | 2021-01-08 | 3M创新有限公司 | 包含三嵌段共聚物的多孔膜 |
| CN116284517A (zh) * | 2022-09-08 | 2023-06-23 | 上海八亿时空先进材料有限公司 | 一种分子量窄分布且高透光性phs树脂及其合成方法与应用 |
Also Published As
| Publication number | Publication date |
|---|---|
| US10202479B2 (en) | 2019-02-12 |
| TWI525117B (zh) | 2016-03-11 |
| TW201509970A (zh) | 2015-03-16 |
| KR20140143715A (ko) | 2014-12-17 |
| KR101631561B1 (ko) | 2016-06-20 |
| JP6574083B2 (ja) | 2019-09-11 |
| JP2014237817A (ja) | 2014-12-18 |
| US20140360975A1 (en) | 2014-12-11 |
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