JP2018154760A - パターン形成材料及びパターン形成方法 - Google Patents
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- C08F212/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
- C08F212/02—Monomers containing only one unsaturated aliphatic radical
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- C08F212/08—Styrene
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- C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
- C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
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- C08F220/06—Acrylic acid; Methacrylic acid; Metal salts or ammonium salts thereof
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- C08F297/00—Macromolecular compounds obtained by successively polymerising different monomer systems using a catalyst of the ionic or coordination type without deactivating the intermediate polymer
- C08F297/02—Macromolecular compounds obtained by successively polymerising different monomer systems using a catalyst of the ionic or coordination type without deactivating the intermediate polymer using a catalyst of the anionic type
- C08F297/026—Macromolecular compounds obtained by successively polymerising different monomer systems using a catalyst of the ionic or coordination type without deactivating the intermediate polymer using a catalyst of the anionic type polymerising acrylic acid, methacrylic acid or derivatives thereof
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- C09D125/00—Coating compositions based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring; Coating compositions based on derivatives of such polymers
- C09D125/02—Homopolymers or copolymers of hydrocarbons
- C09D125/04—Homopolymers or copolymers of styrene
- C09D125/08—Copolymers of styrene
- C09D125/14—Copolymers of styrene with unsaturated esters
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- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D153/00—Coating compositions based on block copolymers containing at least one sequence of a polymer obtained by reactions only involving carbon-to-carbon unsaturated bonds; Coating compositions based on derivatives of such polymers
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0035—Multiple processes, e.g. applying a further resist layer on an already in a previously step, processed pattern or textured surface
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0041—Photosensitive materials providing an etching agent upon exposure
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
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- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
- C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
- C08F220/10—Esters
- C08F220/12—Esters of monohydric alcohols or phenols
- C08F220/16—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms
- C08F220/18—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms with acrylic or methacrylic acids
- C08F220/1804—C4-(meth)acrylate, e.g. butyl (meth)acrylate, isobutyl (meth)acrylate or tert-butyl (meth)acrylate
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Abstract
【解決手段】
本実施形態のパターン形成材料は、基板15と、ブロックコポリマーを含むブロックコポリマー層30と、の間に設けられたポリマー層1に含まれるパターン形成材料であって、パターン形成材料はアクリル骨格を主鎖に持ち、溶解度パラメータの値が前記ブロックコポリマーの溶解度パラメータの最大値と最小値の間にあるパターン形成材料。
【選択図】図1
Description
パターニングの微細化に対応するために、複数種類のポリマーブロックが結合したBCP(ブロックコポリマー、Block-Co-Polymer))を利用する技術が検討されている。BCPをミクロ相分離させて、所望の位置および方向に配向させ、これをテンプレート(マスク)として、基板を加工できる。
[ホモポリマーの合成]
合成したポリマーは、1-Methoxy-2-propyl acetate(PGMEA)に溶解させ2wt%の溶液とした。Si基板15はUV処理を行った後、回転塗布により100nm厚程度の厚みでSi基板15上にポリマー層1を形成させた。これにアニールを行うことで、ポリマー層1と基板15が化学的に結合し、固定化される。得られた膜の水の接触角を測定した。この結果、接触角は分子起動計算で得られた計算値と同じ順番となり、計算と実験結果が一致した。
図2は実施例に係るパターン形成方法を示す図である。
このポリマー層1は、基板15の上に設けられる。基板15は、例えばSi基板15である。
第1の実施形態とは異なる点を説明する。
[ランダムコポリマーの合成]
各モノマーを組成比ごとに混合し、合計0.05molのモノマーを用いた以外は、ホモポリマーと同様の方法で重合をおこなった。poly iso-butyl methacrylate (PiBMA)とpoly methyl methacrylate (PMMA) とのランダムコポリマー、poly n-butyl methacrylate (PnBMA) とpoly methyl methacrylate (PMMA) とのランダムコポリマー、およびpoly n-hexyl methacrylate (PnHMA)とpoly methyl methacrylate (PMMA) とのランダムコポリマーの組成を変更させたものを重合し比較した。合成は各組成比が、20mol%:80mol%、50mol%:50mol%、80mol%:20mol%のものを合成した。
Claims (9)
- 基板と、ブロックコポリマーを含むブロックコポリマー層と、の間に設けられたポリマー層に含まれるパターン形成材料であって、
前記パターン形成材料はアクリル骨格を主鎖に持ち、溶解度パラメータの値が前記ブロックコポリマーの溶解度パラメータの最大値と最小値の間にあるパターン形成材料。 - 前記パターン形成材料は、ホモポリマーを含む請求項1記載のパターン形成材料。
- 前記パターン形成材料は、ランダムコポリマーを含む請求項1記載のパターン形成材料。
- 前記パターン形成材料は、側鎖に炭素数1〜10までのアルキル基を備える請求項1乃至3のいずれかに記載のパターン形成材料。
- 前記パターン形成材料は、分岐をさらに備える請求項4記載のパターン形成材料。
- 前記アルキル基は、イソ体である請求項4または5のいずれかに記載のパターン形成材料。
- 前記ブロックコポリマーはジブロックコポリマーを含む請求項1乃至6のいずれかに記載のパターン形成材料。
- 基板上に開口部を有するレジスト層を設ける工程と、
前記請求項1乃至7のいずれかに記載のパターン形成材料を含むポリマー層を前記レジスト層上に設ける工程と、
前記レジスト層の開口部にブロックコポリマー層を形成する工程と、
前記ブロックコポリマー層を相分離させて、第1の層および前記第1の層よりエッチング耐性が弱い第2の層と、を形成する工程と、
前記第2の層、前記ポリマー層および前記基板をエッチングする工程と、
を備えるパターン形成方法。 - 前記相分離させる方法は、アニールである請求項8記載のパターン形成方法。
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JP2017053469A JP2018154760A (ja) | 2017-03-17 | 2017-03-17 | パターン形成材料及びパターン形成方法 |
US15/703,477 US20180265616A1 (en) | 2017-03-17 | 2017-09-13 | Pattern formation material and pattern formation method |
US16/718,249 US20200123299A1 (en) | 2017-03-17 | 2019-12-18 | Pattern formation material and pattern formation method |
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JP2017053469A JP2018154760A (ja) | 2017-03-17 | 2017-03-17 | パターン形成材料及びパターン形成方法 |
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Citations (9)
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JP2008036491A (ja) * | 2006-08-03 | 2008-02-21 | Nippon Telegr & Teleph Corp <Ntt> | パターン形成方法及びモールド |
JP2013072896A (ja) * | 2011-09-26 | 2013-04-22 | Toshiba Corp | パターン形成方法 |
JP2015007233A (ja) * | 2013-06-24 | 2015-01-15 | ローム・アンド・ハース・エレクトロニック・マテリアルズ,エル.エル.シー. | 中立層ポリマー、その製造の方法、およびそれを含む物品 |
JP2015010118A (ja) * | 2013-06-27 | 2015-01-19 | 東レ株式会社 | 樹脂組成物およびそれを用いた成形品 |
JP2015025034A (ja) * | 2013-07-24 | 2015-02-05 | 東京応化工業株式会社 | 下地剤、相分離構造を含む構造体の製造方法 |
JP2015042700A (ja) * | 2013-08-26 | 2015-03-05 | 住友化学株式会社 | ゴム用老化防止剤 |
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JP2017055078A (ja) * | 2015-09-11 | 2017-03-16 | 株式会社東芝 | 自己組織化材料及びパターン形成方法 |
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US3607988A (en) * | 1968-10-01 | 1971-09-21 | Donald G Gardner | Stereoisomeric complex as light-transmissive means of improved resistance to radiation damage |
US10457088B2 (en) * | 2013-05-13 | 2019-10-29 | Ridgefield Acquisition | Template for self assembly and method of making a self assembled pattern |
US10202479B2 (en) * | 2013-06-07 | 2019-02-12 | Regents Of The University Of Minnesota | Poly(cyclohexylethylene)-polyacrylate block copolymers, methods of manufacture thereof and articles comprising the same |
FR3010414B1 (fr) * | 2013-09-09 | 2015-09-25 | Arkema France | Procede d'obtention de films epais nano-structures obtenus a partir d'une composition de copolymeres a blocs |
US9523917B2 (en) * | 2014-09-16 | 2016-12-20 | SK Hynix Inc. | Methods of forming patterns |
JP2017157590A (ja) * | 2016-02-29 | 2017-09-07 | 株式会社東芝 | パターン形成方法 |
-
2017
- 2017-03-17 JP JP2017053469A patent/JP2018154760A/ja active Pending
- 2017-09-13 US US15/703,477 patent/US20180265616A1/en not_active Abandoned
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2019
- 2019-12-18 US US16/718,249 patent/US20200123299A1/en not_active Abandoned
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JP2008036491A (ja) * | 2006-08-03 | 2008-02-21 | Nippon Telegr & Teleph Corp <Ntt> | パターン形成方法及びモールド |
JP2013072896A (ja) * | 2011-09-26 | 2013-04-22 | Toshiba Corp | パターン形成方法 |
JP2015007233A (ja) * | 2013-06-24 | 2015-01-15 | ローム・アンド・ハース・エレクトロニック・マテリアルズ,エル.エル.シー. | 中立層ポリマー、その製造の方法、およびそれを含む物品 |
JP2015010118A (ja) * | 2013-06-27 | 2015-01-19 | 東レ株式会社 | 樹脂組成物およびそれを用いた成形品 |
JP2015025034A (ja) * | 2013-07-24 | 2015-02-05 | 東京応化工業株式会社 | 下地剤、相分離構造を含む構造体の製造方法 |
JP2015046590A (ja) * | 2013-07-31 | 2015-03-12 | 東京応化工業株式会社 | 相分離構造を含む構造体の製造方法、パターン形成方法及び微細パターン形成方法 |
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US20200123299A1 (en) | 2020-04-23 |
US20180265616A1 (en) | 2018-09-20 |
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