JP6529357B2 - エッチング方法 - Google Patents

エッチング方法 Download PDF

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Publication number
JP6529357B2
JP6529357B2 JP2015125773A JP2015125773A JP6529357B2 JP 6529357 B2 JP6529357 B2 JP 6529357B2 JP 2015125773 A JP2015125773 A JP 2015125773A JP 2015125773 A JP2015125773 A JP 2015125773A JP 6529357 B2 JP6529357 B2 JP 6529357B2
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Japan
Prior art keywords
gas
etched
layer
plasma
mask
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JP2015125773A
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English (en)
Japanese (ja)
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JP2017011127A5 (enExample
JP2017011127A (ja
Inventor
隆幸 勝沼
隆幸 勝沼
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP2015125773A priority Critical patent/JP6529357B2/ja
Priority to US15/183,976 priority patent/US9899232B2/en
Priority to KR1020160075717A priority patent/KR102482619B1/ko
Priority to TW105119381A priority patent/TWI697046B/zh
Publication of JP2017011127A publication Critical patent/JP2017011127A/ja
Priority to US15/867,388 priority patent/US10916442B2/en
Publication of JP2017011127A5 publication Critical patent/JP2017011127A5/ja
Application granted granted Critical
Publication of JP6529357B2 publication Critical patent/JP6529357B2/ja
Priority to US17/149,886 priority patent/US20210134604A1/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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    • H10P50/73—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H10P50/244—
    • H10P50/267—
    • H10P50/283—
    • H10P50/691—
    • H10P72/0418—
    • H10P72/0421—
    • H10P72/10—
    • H10P76/00—
    • H10P76/40—
    • H10W20/0523—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H10P50/242—

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
JP2015125773A 2015-06-23 2015-06-23 エッチング方法 Active JP6529357B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2015125773A JP6529357B2 (ja) 2015-06-23 2015-06-23 エッチング方法
US15/183,976 US9899232B2 (en) 2015-06-23 2016-06-16 Etching method
KR1020160075717A KR102482619B1 (ko) 2015-06-23 2016-06-17 에칭 방법
TW105119381A TWI697046B (zh) 2015-06-23 2016-06-21 蝕刻方法
US15/867,388 US10916442B2 (en) 2015-06-23 2018-01-10 Etching method
US17/149,886 US20210134604A1 (en) 2015-06-23 2021-01-15 Etching method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2015125773A JP6529357B2 (ja) 2015-06-23 2015-06-23 エッチング方法

Publications (3)

Publication Number Publication Date
JP2017011127A JP2017011127A (ja) 2017-01-12
JP2017011127A5 JP2017011127A5 (enExample) 2018-06-28
JP6529357B2 true JP6529357B2 (ja) 2019-06-12

Family

ID=57602823

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2015125773A Active JP6529357B2 (ja) 2015-06-23 2015-06-23 エッチング方法

Country Status (4)

Country Link
US (3) US9899232B2 (enExample)
JP (1) JP6529357B2 (enExample)
KR (1) KR102482619B1 (enExample)
TW (1) TWI697046B (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7022651B2 (ja) * 2018-05-28 2022-02-18 東京エレクトロン株式会社 膜をエッチングする方法及びプラズマ処理装置
JP7198609B2 (ja) * 2018-08-21 2023-01-04 東京エレクトロン株式会社 エッチング方法及びプラズマ処理装置
JP6921799B2 (ja) * 2018-11-30 2021-08-18 東京エレクトロン株式会社 基板処理方法および基板処理システム
JP7174634B2 (ja) * 2019-01-18 2022-11-17 東京エレクトロン株式会社 膜をエッチングする方法
US10886136B2 (en) * 2019-01-31 2021-01-05 Tokyo Electron Limited Method for processing substrates
JP7190940B2 (ja) * 2019-03-01 2022-12-16 東京エレクトロン株式会社 基板処理方法及び基板処理装置
JP7330046B2 (ja) * 2019-09-30 2023-08-21 東京エレクトロン株式会社 基板処理方法、及び基板処理装置
JP7398915B2 (ja) 2019-10-01 2023-12-15 東京エレクトロン株式会社 基板処理方法、半導体デバイスの製造方法、及び、プラズマ処理装置
JP7323409B2 (ja) * 2019-10-01 2023-08-08 東京エレクトロン株式会社 基板処理方法、及び、プラズマ処理装置
US20210195726A1 (en) * 2019-12-12 2021-06-24 James Andrew Leskosek Linear accelerator using a stacked array of cyclotrons
TW202213517A (zh) * 2020-08-28 2022-04-01 日商東京威力科創股份有限公司 基板處理方法及電漿處理裝置
US20220310626A1 (en) * 2021-03-29 2022-09-29 Changxin Memory Technologies, Inc. Method for fabricating semiconductor device
KR20240000122U (ko) 2022-07-12 2024-01-19 주식회사 피앤피코리아 친환경벽지로 만든 다이어리커버

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04100229A (ja) * 1990-08-20 1992-04-02 Fujitsu Ltd 半導体装置の製造方法
JPH11195641A (ja) * 1998-01-05 1999-07-21 Matsushita Electric Ind Co Ltd プラズマ処理方法
US6423175B1 (en) * 1999-10-06 2002-07-23 Taiwan Semiconductor Manufacturing Co., Ltd Apparatus and method for reducing particle contamination in an etcher
US6569774B1 (en) * 2000-08-31 2003-05-27 Micron Technology, Inc. Method to eliminate striations and surface roughness caused by dry etch
JP4176365B2 (ja) * 2002-03-25 2008-11-05 東京エレクトロン株式会社 プラズマエッチング方法
US20040241995A1 (en) * 2003-03-27 2004-12-02 Matsushita Electric Industrial Co., Ltd. Etching apparatus and etching method
US7740737B2 (en) * 2004-06-21 2010-06-22 Tokyo Electron Limited Plasma processing apparatus and method
US20060151116A1 (en) * 2005-01-12 2006-07-13 Taiwan Semiconductor Manufacturing Co., Ltd. Focus rings, apparatus in chamber, contact hole and method of forming contact hole
JP4701776B2 (ja) 2005-03-25 2011-06-15 東京エレクトロン株式会社 エッチング方法及びエッチング装置
US7704849B2 (en) * 2007-12-03 2010-04-27 Micron Technology, Inc. Methods of forming trench isolation in silicon of a semiconductor substrate by plasma
US8614151B2 (en) * 2008-01-04 2013-12-24 Micron Technology, Inc. Method of etching a high aspect ratio contact
JP5213496B2 (ja) * 2008-03-31 2013-06-19 東京エレクトロン株式会社 プラズマエッチング方法及びコンピュータ読み取り可能な記憶媒体
JP5530088B2 (ja) * 2008-10-20 2014-06-25 東京エレクトロン株式会社 プラズマエッチング方法及びプラズマエッチング装置
JP5466468B2 (ja) * 2009-10-05 2014-04-09 旭化成イーマテリアルズ株式会社 ドライエッチング方法
US9287113B2 (en) * 2012-11-08 2016-03-15 Novellus Systems, Inc. Methods for depositing films on sensitive substrates
US8652969B2 (en) * 2011-10-26 2014-02-18 International Business Machines Corporation High aspect ratio and reduced undercut trench etch process for a semiconductor substrate
JP5860668B2 (ja) * 2011-10-28 2016-02-16 東京エレクトロン株式会社 半導体装置の製造方法
US9165783B2 (en) * 2012-11-01 2015-10-20 Applied Materials, Inc. Method of patterning a low-k dielectric film
JP2014107387A (ja) * 2012-11-27 2014-06-09 Tokyo Electron Ltd 載置台構造及びフォーカスリングを保持する方法
JP6059048B2 (ja) * 2013-03-11 2017-01-11 東京エレクトロン株式会社 プラズマエッチング方法
JP6140575B2 (ja) * 2013-08-26 2017-05-31 東京エレクトロン株式会社 半導体装置の製造方法

Also Published As

Publication number Publication date
US20160379834A1 (en) 2016-12-29
KR20170000340A (ko) 2017-01-02
US20180130670A1 (en) 2018-05-10
US20210134604A1 (en) 2021-05-06
TW201717276A (zh) 2017-05-16
JP2017011127A (ja) 2017-01-12
US9899232B2 (en) 2018-02-20
US10916442B2 (en) 2021-02-09
KR102482619B1 (ko) 2022-12-28
TWI697046B (zh) 2020-06-21

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