JP6529357B2 - エッチング方法 - Google Patents

エッチング方法 Download PDF

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Publication number
JP6529357B2
JP6529357B2 JP2015125773A JP2015125773A JP6529357B2 JP 6529357 B2 JP6529357 B2 JP 6529357B2 JP 2015125773 A JP2015125773 A JP 2015125773A JP 2015125773 A JP2015125773 A JP 2015125773A JP 6529357 B2 JP6529357 B2 JP 6529357B2
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Japan
Prior art keywords
gas
etched
layer
plasma
mask
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JP2015125773A
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Japanese (ja)
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JP2017011127A5 (enExample
JP2017011127A (ja
Inventor
隆幸 勝沼
隆幸 勝沼
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Priority to JP2015125773A priority Critical patent/JP6529357B2/ja
Priority to US15/183,976 priority patent/US9899232B2/en
Priority to KR1020160075717A priority patent/KR102482619B1/ko
Priority to TW105119381A priority patent/TWI697046B/zh
Publication of JP2017011127A publication Critical patent/JP2017011127A/ja
Priority to US15/867,388 priority patent/US10916442B2/en
Publication of JP2017011127A5 publication Critical patent/JP2017011127A5/ja
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Publication of JP6529357B2 publication Critical patent/JP6529357B2/ja
Priority to US17/149,886 priority patent/US20210134604A1/en
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/73—Etching of wafers, substrates or parts of devices using masks for insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6502—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials
    • H10P14/6512—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials by exposure to a gas or vapour
    • H10P14/6514—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials by exposure to a gas or vapour by exposure to a plasma
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H10P50/244—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials comprising alternated and repeated etching and passivation steps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/69—Etching of wafers, substrates or parts of devices using masks for semiconductor materials
    • H10P50/691—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/71—Etching of wafers, substrates or parts of devices using masks for conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/10—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof using carriers specially adapted therefor, e.g. front opening unified pods [FOUP]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/052—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers by treatments not introducing additional elements therein
    • H10W20/0523—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers by treatments not introducing additional elements therein by irradiating with ultraviolet or particle radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Drying Of Semiconductors (AREA)
  • Inorganic Chemistry (AREA)
JP2015125773A 2015-06-23 2015-06-23 エッチング方法 Active JP6529357B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2015125773A JP6529357B2 (ja) 2015-06-23 2015-06-23 エッチング方法
US15/183,976 US9899232B2 (en) 2015-06-23 2016-06-16 Etching method
KR1020160075717A KR102482619B1 (ko) 2015-06-23 2016-06-17 에칭 방법
TW105119381A TWI697046B (zh) 2015-06-23 2016-06-21 蝕刻方法
US15/867,388 US10916442B2 (en) 2015-06-23 2018-01-10 Etching method
US17/149,886 US20210134604A1 (en) 2015-06-23 2021-01-15 Etching method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2015125773A JP6529357B2 (ja) 2015-06-23 2015-06-23 エッチング方法

Publications (3)

Publication Number Publication Date
JP2017011127A JP2017011127A (ja) 2017-01-12
JP2017011127A5 JP2017011127A5 (enExample) 2018-06-28
JP6529357B2 true JP6529357B2 (ja) 2019-06-12

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JP2015125773A Active JP6529357B2 (ja) 2015-06-23 2015-06-23 エッチング方法

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US (3) US9899232B2 (enExample)
JP (1) JP6529357B2 (enExample)
KR (1) KR102482619B1 (enExample)
TW (1) TWI697046B (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7022651B2 (ja) 2018-05-28 2022-02-18 東京エレクトロン株式会社 膜をエッチングする方法及びプラズマ処理装置
JP7198609B2 (ja) * 2018-08-21 2023-01-04 東京エレクトロン株式会社 エッチング方法及びプラズマ処理装置
JP6921799B2 (ja) 2018-11-30 2021-08-18 東京エレクトロン株式会社 基板処理方法および基板処理システム
JP7174634B2 (ja) * 2019-01-18 2022-11-17 東京エレクトロン株式会社 膜をエッチングする方法
US10886136B2 (en) * 2019-01-31 2021-01-05 Tokyo Electron Limited Method for processing substrates
JP7190940B2 (ja) * 2019-03-01 2022-12-16 東京エレクトロン株式会社 基板処理方法及び基板処理装置
JP7330046B2 (ja) * 2019-09-30 2023-08-21 東京エレクトロン株式会社 基板処理方法、及び基板処理装置
JP7398915B2 (ja) 2019-10-01 2023-12-15 東京エレクトロン株式会社 基板処理方法、半導体デバイスの製造方法、及び、プラズマ処理装置
JP7323409B2 (ja) * 2019-10-01 2023-08-08 東京エレクトロン株式会社 基板処理方法、及び、プラズマ処理装置
US20210195726A1 (en) * 2019-12-12 2021-06-24 James Andrew Leskosek Linear accelerator using a stacked array of cyclotrons
CN114121641A (zh) * 2020-08-28 2022-03-01 东京毅力科创株式会社 晶片处理方法和等离子体处理装置
US20220310626A1 (en) * 2021-03-29 2022-09-29 Changxin Memory Technologies, Inc. Method for fabricating semiconductor device
KR20240033271A (ko) * 2021-07-27 2024-03-12 도쿄엘렉트론가부시키가이샤 에칭 방법, 반도체 장치의 제조 방법, 에칭 프로그램 및 플라즈마 처리 장치
KR20240000122U (ko) 2022-07-12 2024-01-19 주식회사 피앤피코리아 친환경벽지로 만든 다이어리커버

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JPH11195641A (ja) * 1998-01-05 1999-07-21 Matsushita Electric Ind Co Ltd プラズマ処理方法
US6423175B1 (en) * 1999-10-06 2002-07-23 Taiwan Semiconductor Manufacturing Co., Ltd Apparatus and method for reducing particle contamination in an etcher
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JP4701776B2 (ja) 2005-03-25 2011-06-15 東京エレクトロン株式会社 エッチング方法及びエッチング装置
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JP2014107387A (ja) * 2012-11-27 2014-06-09 Tokyo Electron Ltd 載置台構造及びフォーカスリングを保持する方法
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JP6140575B2 (ja) * 2013-08-26 2017-05-31 東京エレクトロン株式会社 半導体装置の製造方法

Also Published As

Publication number Publication date
US20210134604A1 (en) 2021-05-06
US9899232B2 (en) 2018-02-20
KR20170000340A (ko) 2017-01-02
TWI697046B (zh) 2020-06-21
US20180130670A1 (en) 2018-05-10
KR102482619B1 (ko) 2022-12-28
US10916442B2 (en) 2021-02-09
US20160379834A1 (en) 2016-12-29
JP2017011127A (ja) 2017-01-12
TW201717276A (zh) 2017-05-16

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