JP6525530B2 - 撮像装置 - Google Patents

撮像装置 Download PDF

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Publication number
JP6525530B2
JP6525530B2 JP2014174928A JP2014174928A JP6525530B2 JP 6525530 B2 JP6525530 B2 JP 6525530B2 JP 2014174928 A JP2014174928 A JP 2014174928A JP 2014174928 A JP2014174928 A JP 2014174928A JP 6525530 B2 JP6525530 B2 JP 6525530B2
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Japan
Prior art keywords
transistor
wiring
circuit
light
potential
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Expired - Fee Related
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JP2014174928A
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Japanese (ja)
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JP2015065433A (ja
JP2015065433A5 (enExample
Inventor
秋元 健吾
健吾 秋元
純一 肥塚
純一 肥塚
寛暢 高橋
寛暢 高橋
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Publication of JP2015065433A5 publication Critical patent/JP2015065433A5/ja
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    • GPHYSICS
    • G01MEASURING; TESTING
    • G01TMEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16Measuring radiation intensity
    • G01T1/20Measuring radiation intensity with scintillation detectors
    • G01T1/2018Scintillation-photodiode combinations
    • G01T1/20184Detector read-out circuitry, e.g. for clearing of traps, compensating for traps or compensating for direct hits
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01TMEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16Measuring radiation intensity
    • G01T1/20Measuring radiation intensity with scintillation detectors
    • G01T1/2018Scintillation-photodiode combinations
    • G01T1/20188Auxiliary details, e.g. casings or cooling
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10Integrated devices
    • H10F39/12Image sensors
    • H10F39/18Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/189X-ray, gamma-ray or corpuscular radiation imagers
    • H10F39/1898Indirect radiation image sensors, e.g. using luminescent members
    • AHUMAN NECESSITIES
    • A61MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61BDIAGNOSIS; SURGERY; IDENTIFICATION
    • A61B6/00Apparatus or devices for radiation diagnosis; Apparatus or devices for radiation diagnosis combined with radiation therapy equipment
    • A61B6/42Arrangements for detecting radiation specially adapted for radiation diagnosis
    • A61B6/4208Arrangements for detecting radiation specially adapted for radiation diagnosis characterised by using a particular type of detector

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  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Molecular Biology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Measurement Of Radiation (AREA)
  • Light Receiving Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Thin Film Transistor (AREA)
JP2014174928A 2013-08-30 2014-08-29 撮像装置 Expired - Fee Related JP6525530B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2014174928A JP6525530B2 (ja) 2013-08-30 2014-08-29 撮像装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2013179560 2013-08-30
JP2013179560 2013-08-30
JP2014174928A JP6525530B2 (ja) 2013-08-30 2014-08-29 撮像装置

Publications (3)

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JP2015065433A JP2015065433A (ja) 2015-04-09
JP2015065433A5 JP2015065433A5 (enExample) 2017-09-07
JP6525530B2 true JP6525530B2 (ja) 2019-06-05

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US (1) US9360564B2 (enExample)
JP (1) JP6525530B2 (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
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