JP6509596B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
- Publication number
- JP6509596B2 JP6509596B2 JP2015051802A JP2015051802A JP6509596B2 JP 6509596 B2 JP6509596 B2 JP 6509596B2 JP 2015051802 A JP2015051802 A JP 2015051802A JP 2015051802 A JP2015051802 A JP 2015051802A JP 6509596 B2 JP6509596 B2 JP 6509596B2
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- JP
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- Prior art keywords
- semiconductor
- insulator
- transistor
- conductor
- oxygen
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Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/674—Thin-film transistors [TFT] characterised by the active materials
- H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6758—Thin-film transistors [TFT] characterised by the insulating substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/70—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates the floating gate being an electrode shared by two or more components
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
- H10D30/6708—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device for preventing the kink effect or the snapback effect, e.g. discharging the minority carriers of the channel region for preventing bipolar effect
- H10D30/6711—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device for preventing the kink effect or the snapback effect, e.g. discharging the minority carriers of the channel region for preventing bipolar effect by using electrodes contacting the supplementary regions or layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/117—Shapes of semiconductor bodies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
- H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D88/00—Three-dimensional [3D] integrated devices
Landscapes
- Thin Film Transistor (AREA)
- Semiconductor Memories (AREA)
- Electroluminescent Light Sources (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Liquid Crystal (AREA)
- Electrodes Of Semiconductors (AREA)
- Semiconductor Integrated Circuits (AREA)
- Non-Volatile Memory (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015051802A JP6509596B2 (ja) | 2014-03-18 | 2015-03-16 | 半導体装置 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014055157 | 2014-03-18 | ||
| JP2014055157 | 2014-03-18 | ||
| JP2015051802A JP6509596B2 (ja) | 2014-03-18 | 2015-03-16 | 半導体装置 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2019071160A Division JP6715364B2 (ja) | 2014-03-18 | 2019-04-03 | 半導体装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2015195365A JP2015195365A (ja) | 2015-11-05 |
| JP2015195365A5 JP2015195365A5 (https=) | 2018-04-26 |
| JP6509596B2 true JP6509596B2 (ja) | 2019-05-08 |
Family
ID=54142867
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015051802A Active JP6509596B2 (ja) | 2014-03-18 | 2015-03-16 | 半導体装置 |
| JP2019071160A Expired - Fee Related JP6715364B2 (ja) | 2014-03-18 | 2019-04-03 | 半導体装置 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2019071160A Expired - Fee Related JP6715364B2 (ja) | 2014-03-18 | 2019-04-03 | 半導体装置 |
Country Status (4)
| Country | Link |
|---|---|
| US (2) | US9954111B2 (https=) |
| JP (2) | JP6509596B2 (https=) |
| KR (1) | KR20150108791A (https=) |
| TW (1) | TWI657288B (https=) |
Families Citing this family (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102760229B1 (ko) | 2014-05-30 | 2025-02-03 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치, 이의 제조 방법, 및 전자 장치 |
| US9455337B2 (en) | 2014-06-18 | 2016-09-27 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| US9647129B2 (en) | 2014-07-04 | 2017-05-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| CN107004041B (zh) | 2014-11-20 | 2021-06-29 | 唯听助听器公司 | 助听器用户账户管理 |
| TWI711165B (zh) | 2014-11-21 | 2020-11-21 | 日商半導體能源研究所股份有限公司 | 半導體裝置及電子裝置 |
| US10978489B2 (en) | 2015-07-24 | 2021-04-13 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, display panel, method for manufacturing semiconductor device, method for manufacturing display panel, and information processing device |
| US10667062B2 (en) | 2015-08-14 | 2020-05-26 | Widex A/S | System and method for personalizing a hearing aid |
| US10522582B2 (en) * | 2015-10-05 | 2019-12-31 | Sony Semiconductor Solutions Corporation | Imaging apparatus |
| JP6917700B2 (ja) * | 2015-12-02 | 2021-08-11 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| WO2017103737A1 (en) | 2015-12-18 | 2017-06-22 | Semiconductor Energy Laboratory Co., Ltd. | Display panel, input/output device, data processing device, and method for manufacturing display panel |
| CN105428392A (zh) * | 2015-12-31 | 2016-03-23 | 京东方科技集团股份有限公司 | 一种有机电致发光显示装置及其制备方法 |
| WO2017137869A1 (en) * | 2016-02-12 | 2017-08-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and display device including the semiconductor device |
| WO2017208710A1 (ja) * | 2016-05-31 | 2017-12-07 | 日立工機株式会社 | 充電装置 |
| TWI823763B (zh) | 2016-06-24 | 2023-11-21 | 美商克若密斯股份有限公司 | 工程基板結構 |
| US10074567B2 (en) * | 2016-10-21 | 2018-09-11 | QROMIS, Inc. | Method and system for vertical integration of elemental and compound semiconductors |
| KR20180055701A (ko) * | 2016-11-17 | 2018-05-25 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 제작 방법 |
| KR102565380B1 (ko) * | 2016-12-07 | 2023-08-10 | 삼성디스플레이 주식회사 | 박막 트랜지스터 기판 |
| CN117355134A (zh) | 2017-01-27 | 2024-01-05 | 株式会社半导体能源研究所 | 电容器、半导体装置及半导体装置的制造方法 |
| JP7118948B2 (ja) | 2017-03-13 | 2022-08-16 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| US9865337B1 (en) * | 2017-03-22 | 2018-01-09 | Qualcomm Incorporated | Write data path to reduce charge leakage of negative boost |
| US9929203B1 (en) | 2017-04-27 | 2018-03-27 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device and method for fabricating thereof |
| EP3679605B1 (en) * | 2017-09-06 | 2021-04-14 | Micron Technology, Inc. | Memory arrays comprising vertically-alternating tiers of insulative material and memory cells and methods of forming a memory array |
| WO2019175704A1 (ja) | 2018-03-16 | 2019-09-19 | 株式会社半導体エネルギー研究所 | 電気モジュール、表示パネル、表示装置、入出力装置、情報処理装置、電気モジュールの作製方法 |
| US11251186B2 (en) * | 2020-03-23 | 2022-02-15 | Intel Corporation | Compute near memory with backend memory |
| US11315928B2 (en) * | 2020-09-08 | 2022-04-26 | Nanya Technology Corporation | Semiconductor structure with buried power line and buried signal line and method for manufacturing the same |
| WO2024194726A1 (ja) * | 2023-03-17 | 2024-09-26 | 株式会社半導体エネルギー研究所 | 半導体装置、及び、半導体装置の作製方法 |
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| US20180190828A1 (en) | 2018-07-05 |
| US9954111B2 (en) | 2018-04-24 |
| JP2019117946A (ja) | 2019-07-18 |
| KR20150108791A (ko) | 2015-09-30 |
| JP6715364B2 (ja) | 2020-07-01 |
| US10388797B2 (en) | 2019-08-20 |
| JP2015195365A (ja) | 2015-11-05 |
| US20150270288A1 (en) | 2015-09-24 |
| TWI657288B (zh) | 2019-04-21 |
| TW201537256A (zh) | 2015-10-01 |
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