JP6480248B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
- Publication number
- JP6480248B2 JP6480248B2 JP2015088946A JP2015088946A JP6480248B2 JP 6480248 B2 JP6480248 B2 JP 6480248B2 JP 2015088946 A JP2015088946 A JP 2015088946A JP 2015088946 A JP2015088946 A JP 2015088946A JP 6480248 B2 JP6480248 B2 JP 6480248B2
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- Prior art keywords
- transistor
- wiring
- potential
- programmable switch
- logic block
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title claims description 65
- 238000010586 diagram Methods 0.000 claims description 6
- 238000007667 floating Methods 0.000 claims description 3
- 239000012212 insulator Substances 0.000 description 70
- 239000011229 interlayer Substances 0.000 description 37
- 239000010408 film Substances 0.000 description 29
- 239000003990 capacitor Substances 0.000 description 13
- 239000010410 layer Substances 0.000 description 10
- 229910052814 silicon oxide Inorganic materials 0.000 description 10
- 230000007423 decrease Effects 0.000 description 9
- 230000000694 effects Effects 0.000 description 9
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 8
- 238000004088 simulation Methods 0.000 description 8
- 230000006870 function Effects 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 238000002955 isolation Methods 0.000 description 6
- 230000010355 oscillation Effects 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 230000008878 coupling Effects 0.000 description 5
- 238000010168 coupling process Methods 0.000 description 5
- 238000005859 coupling reaction Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 230000005540 biological transmission Effects 0.000 description 4
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000004044 response Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- 239000011701 zinc Substances 0.000 description 3
- 229910017107 AlOx Inorganic materials 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 235000013599 spices Nutrition 0.000 description 2
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000003550 marker Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- 229960001296 zinc oxide Drugs 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
- H03K19/173—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using elementary logic circuits as components
- H03K19/177—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using elementary logic circuits as components arranged in matrix form
- H03K19/17748—Structural details of configuration resources
- H03K19/1776—Structural details of configuration resources for memories
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
- H03K19/173—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using elementary logic circuits as components
- H03K19/1733—Controllable logic circuits
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
- H03K19/173—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using elementary logic circuits as components
- H03K19/177—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using elementary logic circuits as components arranged in matrix form
- H03K19/17736—Structural details of routing resources
Landscapes
- Physics & Mathematics (AREA)
- Mathematical Physics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Computing Systems (AREA)
- General Engineering & Computer Science (AREA)
- Computer Networks & Wireless Communication (AREA)
- Logic Circuits (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
- Thin Film Transistor (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014091701 | 2014-04-25 | ||
| JP2014091701 | 2014-04-25 | ||
| JP2014180766 | 2014-09-05 | ||
| JP2014180766 | 2014-09-05 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2016054475A JP2016054475A (ja) | 2016-04-14 |
| JP2016054475A5 JP2016054475A5 (enExample) | 2018-05-31 |
| JP6480248B2 true JP6480248B2 (ja) | 2019-03-06 |
Family
ID=54335736
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015088946A Expired - Fee Related JP6480248B2 (ja) | 2014-04-25 | 2015-04-24 | 半導体装置 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US9287878B2 (enExample) |
| JP (1) | JP6480248B2 (enExample) |
| KR (1) | KR20150123724A (enExample) |
| TW (1) | TWI643457B (enExample) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6534530B2 (ja) * | 2014-02-07 | 2019-06-26 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JP6541376B2 (ja) * | 2014-03-13 | 2019-07-10 | 株式会社半導体エネルギー研究所 | プログラマブルロジックデバイスの動作方法 |
| TWI688211B (zh) * | 2015-01-29 | 2020-03-11 | 日商半導體能源研究所股份有限公司 | 半導體裝置、電子組件及電子裝置 |
| US9954531B2 (en) * | 2015-03-03 | 2018-04-24 | Semiconductor Energy Laboratory Co., Ltd. | Electronic device |
| US10014325B2 (en) * | 2016-03-10 | 2018-07-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and electronic device |
| JP6625943B2 (ja) * | 2016-08-01 | 2019-12-25 | 株式会社日立製作所 | 情報処理装置 |
| KR20180055701A (ko) | 2016-11-17 | 2018-05-25 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 제작 방법 |
| KR102499699B1 (ko) * | 2021-08-04 | 2023-02-14 | 고려대학교 산학협력단 | 실리콘 트랜지스터를 이용한 가변형 로직 인 메모리 소자 |
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| Publication number | Publication date |
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| TW201547197A (zh) | 2015-12-16 |
| US20150311897A1 (en) | 2015-10-29 |
| KR20150123724A (ko) | 2015-11-04 |
| US9287878B2 (en) | 2016-03-15 |
| JP2016054475A (ja) | 2016-04-14 |
| TWI643457B (zh) | 2018-12-01 |
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