JP6478685B2 - 半導体発光素子 - Google Patents
半導体発光素子 Download PDFInfo
- Publication number
- JP6478685B2 JP6478685B2 JP2015025711A JP2015025711A JP6478685B2 JP 6478685 B2 JP6478685 B2 JP 6478685B2 JP 2015025711 A JP2015025711 A JP 2015025711A JP 2015025711 A JP2015025711 A JP 2015025711A JP 6478685 B2 JP6478685 B2 JP 6478685B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- nitride semiconductor
- light emitting
- concentration
- type nitride
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
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- 239000004065 semiconductor Substances 0.000 title claims description 86
- 150000004767 nitrides Chemical class 0.000 claims description 80
- 230000004888 barrier function Effects 0.000 claims description 77
- 239000010410 layer Substances 0.000 description 237
- 239000000758 substrate Substances 0.000 description 17
- 239000007789 gas Substances 0.000 description 14
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 10
- 230000000052 comparative effect Effects 0.000 description 10
- 229910002704 AlGaN Inorganic materials 0.000 description 9
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 8
- 239000012159 carrier gas Substances 0.000 description 7
- 230000001747 exhibiting effect Effects 0.000 description 7
- 229910052594 sapphire Inorganic materials 0.000 description 7
- 239000010980 sapphire Substances 0.000 description 7
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 5
- 229910021529 ammonia Inorganic materials 0.000 description 5
- 229910001873 dinitrogen Inorganic materials 0.000 description 5
- 239000012535 impurity Substances 0.000 description 5
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 5
- 230000007423 decrease Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 229910052738 indium Inorganic materials 0.000 description 3
- 239000011777 magnesium Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 2
- VCZQFJFZMMALHB-UHFFFAOYSA-N tetraethylsilane Chemical compound CC[Si](CC)(CC)CC VCZQFJFZMMALHB-UHFFFAOYSA-N 0.000 description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 150000002902 organometallic compounds Chemical class 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Images
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- Led Devices (AREA)
- Engineering & Computer Science (AREA)
- Semiconductor Lasers (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015025711A JP6478685B2 (ja) | 2015-02-12 | 2015-02-12 | 半導体発光素子 |
| TW105101859A TW201703294A (zh) | 2015-02-12 | 2016-01-21 | 半導體發光元件 |
| KR1020160012419A KR20160099483A (ko) | 2015-02-12 | 2016-02-01 | 반도체 발광 소자 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015025711A JP6478685B2 (ja) | 2015-02-12 | 2015-02-12 | 半導体発光素子 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2016149458A JP2016149458A (ja) | 2016-08-18 |
| JP6478685B2 true JP6478685B2 (ja) | 2019-03-06 |
Family
ID=56688461
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015025711A Active JP6478685B2 (ja) | 2015-02-12 | 2015-02-12 | 半導体発光素子 |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP6478685B2 (ko) |
| KR (1) | KR20160099483A (ko) |
| TW (1) | TW201703294A (ko) |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3857715B2 (ja) * | 1994-09-19 | 2006-12-13 | 株式会社東芝 | 化合物半導体装置の製造方法 |
| JP3491375B2 (ja) * | 1995-03-30 | 2004-01-26 | 昭和電工株式会社 | 発光素子及びその製造方法 |
| JP3433075B2 (ja) * | 1997-11-19 | 2003-08-04 | 株式会社東芝 | 窒化物系半導体素子の製造方法 |
| JPH11298090A (ja) | 1998-04-09 | 1999-10-29 | Nichia Chem Ind Ltd | 窒化物半導体素子 |
| JP3498697B2 (ja) | 2000-07-07 | 2004-02-16 | 日亜化学工業株式会社 | 窒化物半導体素子 |
| WO2007013257A1 (ja) * | 2005-07-29 | 2007-02-01 | Matsushita Electric Industrial Co., Ltd. | 窒化物系半導体素子 |
| JP4424680B2 (ja) * | 2006-04-04 | 2010-03-03 | スタンレー電気株式会社 | ３族窒化物半導体の積層構造、及びその製造方法、並びに、半導体発光素子、及びその製造方法 |
| JP2008078186A (ja) * | 2006-09-19 | 2008-04-03 | Mitsubishi Chemicals Corp | 窒化物系化合物半導体の結晶成長方法 |
| JP2008140917A (ja) * | 2006-11-30 | 2008-06-19 | Sumitomo Electric Ind Ltd | 窒化物系半導体発光素子 |
| KR101262726B1 (ko) * | 2011-12-30 | 2013-05-09 | 일진엘이디(주) | 탄소 도핑된 ｐ형 질화물층을 포함하는 질화물계 발광소자 제조 방법 |
| JP6156681B2 (ja) * | 2013-02-13 | 2017-07-05 | ウシオ電機株式会社 | 窒化物半導体発光素子及びその製造方法 |
-
2015
- 2015-02-12 JP JP2015025711A patent/JP6478685B2/ja active Active
-
2016
- 2016-01-21 TW TW105101859A patent/TW201703294A/zh unknown
- 2016-02-01 KR KR1020160012419A patent/KR20160099483A/ko not_active Application Discontinuation
Also Published As
| Publication number | Publication date |
|---|---|
| JP2016149458A (ja) | 2016-08-18 |
| TW201703294A (zh) | 2017-01-16 |
| KR20160099483A (ko) | 2016-08-22 |
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