JP5634368B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP5634368B2 JP5634368B2 JP2011209882A JP2011209882A JP5634368B2 JP 5634368 B2 JP5634368 B2 JP 5634368B2 JP 2011209882 A JP2011209882 A JP 2011209882A JP 2011209882 A JP2011209882 A JP 2011209882A JP 5634368 B2 JP5634368 B2 JP 5634368B2
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- 239000004065 semiconductor Substances 0.000 title claims description 32
- 230000004888 barrier function Effects 0.000 claims description 54
- 239000000203 mixture Substances 0.000 claims description 48
- 239000000758 substrate Substances 0.000 claims description 23
- 230000002265 prevention Effects 0.000 claims description 6
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 12
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 12
- 229910052594 sapphire Inorganic materials 0.000 description 11
- 239000010980 sapphire Substances 0.000 description 11
- 230000000052 comparative effect Effects 0.000 description 10
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 10
- 238000010586 diagram Methods 0.000 description 8
- 238000005259 measurement Methods 0.000 description 8
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 7
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 7
- 229910021529 ammonia Inorganic materials 0.000 description 6
- 238000002347 injection Methods 0.000 description 6
- 239000007924 injection Substances 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 229910052757 nitrogen Inorganic materials 0.000 description 6
- 229910002704 AlGaN Inorganic materials 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
- 239000012159 carrier gas Substances 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- 238000005191 phase separation Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000000470 constituent Substances 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000000295 emission spectrum Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- QBJCZLXULXFYCK-UHFFFAOYSA-N magnesium;cyclopenta-1,3-diene Chemical compound [Mg+2].C1C=CC=[C-]1.C1C=CC=[C-]1 QBJCZLXULXFYCK-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Description
図1は、本発明の第1の実施形態に係る半導体装置(発光ダイオード)の基本的な構成を模式的に示した断面図である。図1に示した半導体装置は、基板10と、基板10上に形成された下地層20と、下地層20上に形成された発光層30によって構成されている。
次に、本発明の第2の実施形態について説明する。なお、基本的な構成は第1の実施形態と同様であり、第1の実施形態で説明した事項については説明を省略する。
21…n型GaNコンタクト層 22…n型GaNガイド層
30…発光層 31…障壁層 32…中間層
33…量子井戸層 34…中間層 35…障壁層
41…p型AlGaNオーバーフロー防止層
42…p型GaN層 43…p型GaNコンタクト層
50…n側電極 60…p側電極
Claims (7)
- 下地層と、
前記下地層上に形成され、InxAlyGa1-x-yN(0<x<1、0<y<1)で形成された障壁層とInxGa1-xN(0<x<1)で形成された量子井戸層とが交互に積層された発光層と、
互いに隣接する前記障壁層と前記量子井戸層との間に設けられ、InxGa1-xN(0<x<1)で形成され且つ前記量子井戸層よりも低いIn組成を有する中間層と、
を備え、
前記量子井戸層のIn組成は、0.1〜0.3の範囲であり、
前記障壁層のIn組成は、0.01〜0.05の範囲であり、
前記中間層のIn組成は、0.01〜0.05の範囲である
ことを特徴とする半導体装置。 - 前記中間層は、前記障壁層と同じ、又は前記障壁層よりも高いIn組成を有する
ことを特徴とする請求項1に記載の半導体装置。 - 前記障壁層でAl組成又はIn組成が傾斜している
ことを特徴とする請求項1又は2に記載の半導体装置。 - 前記障壁層のAl組成は、0.2〜0.4の範囲である
ことを特徴とする請求項1乃至3のいずれかに記載の半導体装置。 - 前記発光層上に形成され、前記障壁層よりも高いAl組成を有するオーバーフロー防止層をさらに備えた
ことを特徴とする請求項1乃至4のいずれかに記載の半導体装置。 - 前記発光層上に形成された、p−InuAlvGa1-u-vN(0≦u<1,0<v<1)層をさらに備えた
ことを特徴とする請求項1乃至5のいずれかに記載の半導体装置。 - 前記下地層は、基板の実質的に(0001)面上に形成されている
ことを特徴とする請求項1乃至6のいずれかに記載の半導体装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011209882A JP5634368B2 (ja) | 2008-08-29 | 2011-09-26 | 半導体装置 |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008221471 | 2008-08-29 | ||
JP2008221471 | 2008-08-29 | ||
JP2011209882A JP5634368B2 (ja) | 2008-08-29 | 2011-09-26 | 半導体装置 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009201071A Division JP2010080955A (ja) | 2008-08-29 | 2009-08-31 | 半導体装置 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2011258994A JP2011258994A (ja) | 2011-12-22 |
JP2011258994A5 JP2011258994A5 (ja) | 2012-06-07 |
JP5634368B2 true JP5634368B2 (ja) | 2014-12-03 |
Family
ID=41721595
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009201071A Pending JP2010080955A (ja) | 2008-08-29 | 2009-08-31 | 半導体装置 |
JP2011209882A Active JP5634368B2 (ja) | 2008-08-29 | 2011-09-26 | 半導体装置 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009201071A Pending JP2010080955A (ja) | 2008-08-29 | 2009-08-31 | 半導体装置 |
Country Status (6)
Country | Link |
---|---|
US (1) | US20100187497A1 (ja) |
EP (1) | EP2325899A4 (ja) |
JP (2) | JP2010080955A (ja) |
KR (1) | KR20110034689A (ja) |
CN (1) | CN102138227A (ja) |
WO (1) | WO2010024436A1 (ja) |
Families Citing this family (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2011027417A1 (ja) | 2009-09-01 | 2011-03-10 | 株式会社 東芝 | 半導体発光素子 |
JP4940317B2 (ja) * | 2010-02-25 | 2012-05-30 | 株式会社東芝 | 半導体発光素子及びその製造方法 |
JP5325171B2 (ja) * | 2010-07-08 | 2013-10-23 | 株式会社東芝 | 半導体発光素子 |
US9142413B2 (en) * | 2010-11-08 | 2015-09-22 | Georgia Tech Research Corporation | Methods for growing a non-phase separated group-III nitride semiconductor alloy |
US20130082274A1 (en) * | 2011-09-29 | 2013-04-04 | Bridgelux, Inc. | Light emitting devices having dislocation density maintaining buffer layers |
KR101262726B1 (ko) * | 2011-12-30 | 2013-05-09 | 일진엘이디(주) | 탄소 도핑된 p형 질화물층을 포함하는 질화물계 발광소자 제조 방법 |
CN104170089B (zh) * | 2012-02-28 | 2017-05-31 | 皇家飞利浦有限公司 | 用于ac led的硅衬底上的氮化镓led与氮化铝镓/氮化镓器件的集成 |
TWI648872B (zh) | 2013-03-15 | 2019-01-21 | 法商梭意泰科公司 | 具有包含InGaN之作用區域之半導體結構、形成此等半導體結構之方法及由此等半導體結構所形成之發光裝置 |
TWI593135B (zh) | 2013-03-15 | 2017-07-21 | 索泰克公司 | 具有含氮化銦鎵之主動區域之半導體結構,形成此等半導體結構之方法,以及應用此等半導體結構形成之發光元件 |
DE112014001352T5 (de) * | 2013-03-15 | 2015-11-26 | Soitec | Lichtemitterdioden-Halbleiterstrukturen mit aktiven Gebieten, die InGaN enthalten |
FR3003397B1 (fr) * | 2013-03-15 | 2016-07-22 | Soitec Silicon On Insulator | Structures semi-conductrices dotées de régions actives comprenant de l'INGAN |
JP5606595B2 (ja) * | 2013-06-28 | 2014-10-15 | 株式会社東芝 | 半導体発光素子の製造方法 |
FR3012676A1 (fr) | 2013-10-25 | 2015-05-01 | Commissariat Energie Atomique | Diode electroluminescente a puits quantiques separes par des couches barrieres d'ingan a compositions d'indium variables |
JP6281469B2 (ja) * | 2014-11-03 | 2018-02-21 | 豊田合成株式会社 | 発光素子の製造方法 |
US9985168B1 (en) | 2014-11-18 | 2018-05-29 | Cree, Inc. | Group III nitride based LED structures including multiple quantum wells with barrier-well unit interface layers |
EP3255119B1 (en) * | 2015-02-02 | 2019-11-13 | Stanley Electric Co., Ltd. | Method for manufacturing quantum dot |
JP6764230B2 (ja) * | 2015-02-06 | 2020-09-30 | スタンレー電気株式会社 | 半導体ナノ粒子の製造方法 |
JP6764231B2 (ja) * | 2015-02-06 | 2020-09-30 | スタンレー電気株式会社 | 半導体ナノ粒子の製造方法、および、半導体ナノ粒子 |
JP6128138B2 (ja) * | 2015-02-10 | 2017-05-17 | ウシオ電機株式会社 | 半導体発光素子 |
DE102016116425A1 (de) | 2016-09-02 | 2018-03-08 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement |
US11393948B2 (en) | 2018-08-31 | 2022-07-19 | Creeled, Inc. | Group III nitride LED structures with improved electrical performance |
JP6891865B2 (ja) | 2018-10-25 | 2021-06-18 | 日亜化学工業株式会社 | 発光素子 |
US11404473B2 (en) | 2019-12-23 | 2022-08-02 | Lumileds Llc | III-nitride multi-wavelength LED arrays |
US11923398B2 (en) | 2019-12-23 | 2024-03-05 | Lumileds Llc | III-nitride multi-wavelength LED arrays |
EP4147280A4 (en) * | 2020-05-04 | 2024-06-12 | Google LLC | LIGHT-EMITTING DIODES WITH INTEGRATED ALUMINUM-CONTAINING LAYERS AND ASSOCIATED METHODS |
US11631786B2 (en) * | 2020-11-12 | 2023-04-18 | Lumileds Llc | III-nitride multi-wavelength LED arrays with etch stop layer |
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JPH1065271A (ja) * | 1996-08-13 | 1998-03-06 | Toshiba Corp | 窒化ガリウム系半導体光発光素子 |
JP3304782B2 (ja) * | 1996-09-08 | 2002-07-22 | 豊田合成株式会社 | 半導体発光素子 |
JPH10270756A (ja) * | 1997-03-27 | 1998-10-09 | Sanyo Electric Co Ltd | 窒化ガリウム系化合物半導体装置 |
JP3519990B2 (ja) * | 1998-12-09 | 2004-04-19 | 三洋電機株式会社 | 発光素子及びその製造方法 |
JP4032636B2 (ja) * | 1999-12-13 | 2008-01-16 | 日亜化学工業株式会社 | 発光素子 |
JP4724901B2 (ja) | 2000-07-21 | 2011-07-13 | パナソニック株式会社 | 窒化物半導体の製造方法 |
JP4161603B2 (ja) * | 2001-03-28 | 2008-10-08 | 日亜化学工業株式会社 | 窒化物半導体素子 |
ATE419666T1 (de) * | 2001-03-28 | 2009-01-15 | Nichia Corp | Nitrid-halbleiterelement |
CN100521260C (zh) * | 2002-07-16 | 2009-07-29 | 氮化物半导体株式会社 | 氮化镓类化合物半导体装置 |
JP2004200347A (ja) * | 2002-12-18 | 2004-07-15 | Sumitomo Electric Ind Ltd | 高放熱性能を持つ発光ダイオード |
US20040161006A1 (en) * | 2003-02-18 | 2004-08-19 | Ying-Lan Chang | Method and apparatus for improving wavelength stability for InGaAsN devices |
JP4412918B2 (ja) * | 2003-05-28 | 2010-02-10 | シャープ株式会社 | 窒化物半導体発光素子及びその製造方法 |
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JP4389723B2 (ja) * | 2004-02-17 | 2009-12-24 | 住友電気工業株式会社 | 半導体素子を形成する方法 |
CN100349306C (zh) * | 2004-08-27 | 2007-11-14 | 中国科学院半导体研究所 | 蓝光、黄光量子阱堆叠结构白光发光二极管及制作方法 |
JP2007088270A (ja) * | 2005-09-22 | 2007-04-05 | Matsushita Electric Works Ltd | 半導体発光素子およびそれを用いる照明装置ならびに半導体発光素子の製造方法 |
JP2007214221A (ja) * | 2006-02-08 | 2007-08-23 | Sharp Corp | 窒化物半導体レーザ素子 |
KR100753518B1 (ko) * | 2006-05-23 | 2007-08-31 | 엘지전자 주식회사 | 질화물계 발광 소자 |
-
2009
- 2009-08-31 EP EP09810080.3A patent/EP2325899A4/en not_active Withdrawn
- 2009-08-31 JP JP2009201071A patent/JP2010080955A/ja active Pending
- 2009-08-31 WO PCT/JP2009/065195 patent/WO2010024436A1/ja active Application Filing
- 2009-08-31 KR KR1020117004435A patent/KR20110034689A/ko not_active Application Discontinuation
- 2009-08-31 CN CN2009801334030A patent/CN102138227A/zh active Pending
-
2010
- 2010-03-03 US US12/716,668 patent/US20100187497A1/en not_active Abandoned
-
2011
- 2011-09-26 JP JP2011209882A patent/JP5634368B2/ja active Active
Also Published As
Publication number | Publication date |
---|---|
EP2325899A1 (en) | 2011-05-25 |
EP2325899A4 (en) | 2015-04-29 |
US20100187497A1 (en) | 2010-07-29 |
JP2010080955A (ja) | 2010-04-08 |
WO2010024436A1 (ja) | 2010-03-04 |
CN102138227A (zh) | 2011-07-27 |
KR20110034689A (ko) | 2011-04-05 |
JP2011258994A (ja) | 2011-12-22 |
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