JP6424610B2 - 半導体装置、および製造方法 - Google Patents

半導体装置、および製造方法 Download PDF

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Publication number
JP6424610B2
JP6424610B2 JP2014256186A JP2014256186A JP6424610B2 JP 6424610 B2 JP6424610 B2 JP 6424610B2 JP 2014256186 A JP2014256186 A JP 2014256186A JP 2014256186 A JP2014256186 A JP 2014256186A JP 6424610 B2 JP6424610 B2 JP 6424610B2
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Prior art keywords
metal layer
semiconductor element
semiconductor device
bump
electrode
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JP2014256186A
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English (en)
Japanese (ja)
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JP2015216350A (ja
JP2015216350A5 (cg-RX-API-DMAC10.html
Inventor
悟 脇山
悟 脇山
直樹 城
直樹 城
完 清水
完 清水
卓矢 中村
卓矢 中村
利彦 林
利彦 林
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Sony Corp
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Sony Corp
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Priority to JP2014256186A priority Critical patent/JP6424610B2/ja
Application filed by Sony Corp filed Critical Sony Corp
Priority to US15/118,575 priority patent/US10600838B2/en
Priority to CN201580006909.0A priority patent/CN105981160B/zh
Priority to KR1020227006069A priority patent/KR20220030314A/ko
Priority to PCT/JP2015/002071 priority patent/WO2015162872A1/en
Priority to KR1020167021519A priority patent/KR102370046B1/ko
Priority to CN201811352193.1A priority patent/CN109637992B/zh
Priority to KR1020237005687A priority patent/KR102619737B1/ko
Priority to TW104112256A priority patent/TWI697074B/zh
Publication of JP2015216350A publication Critical patent/JP2015216350A/ja
Publication of JP2015216350A5 publication Critical patent/JP2015216350A5/ja
Application granted granted Critical
Publication of JP6424610B2 publication Critical patent/JP6424610B2/ja
Priority to US16/503,062 priority patent/US11476291B2/en
Priority to US17/939,796 priority patent/US20230005979A1/en
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JP2014256186A 2014-04-23 2014-12-18 半導体装置、および製造方法 Active JP6424610B2 (ja)

Priority Applications (11)

Application Number Priority Date Filing Date Title
JP2014256186A JP6424610B2 (ja) 2014-04-23 2014-12-18 半導体装置、および製造方法
KR1020237005687A KR102619737B1 (ko) 2014-04-23 2015-04-15 반도체 장치 및 그 제조 방법
KR1020227006069A KR20220030314A (ko) 2014-04-23 2015-04-15 반도체 장치 및 그 제조 방법
PCT/JP2015/002071 WO2015162872A1 (en) 2014-04-23 2015-04-15 Semiconductor device and method of manufacturing thereof
KR1020167021519A KR102370046B1 (ko) 2014-04-23 2015-04-15 반도체 장치 및 그 제조 방법
CN201811352193.1A CN109637992B (zh) 2014-04-23 2015-04-15 半导体装置及其制造方法
US15/118,575 US10600838B2 (en) 2014-04-23 2015-04-15 Semiconductor device and method of manufacturing thereof
CN201580006909.0A CN105981160B (zh) 2014-04-23 2015-04-15 半导体装置及其制造方法
TW104112256A TWI697074B (zh) 2014-04-23 2015-04-16 半導體裝置及其製造方法
US16/503,062 US11476291B2 (en) 2014-04-23 2019-07-03 Semiconductor device and method of manufacturing thereof
US17/939,796 US20230005979A1 (en) 2014-04-23 2022-09-07 Semiconductor device and method of manufacturing thereof

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JP2014088804 2014-04-23
JP2014088804 2014-04-23
JP2014256186A JP6424610B2 (ja) 2014-04-23 2014-12-18 半導体装置、および製造方法

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JP2018198181A Division JP6645555B2 (ja) 2014-04-23 2018-10-22 半導体装置の製造方法

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JP2015216350A5 JP2015216350A5 (cg-RX-API-DMAC10.html) 2017-03-23
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JP (1) JP6424610B2 (cg-RX-API-DMAC10.html)
KR (3) KR102370046B1 (cg-RX-API-DMAC10.html)
CN (2) CN109637992B (cg-RX-API-DMAC10.html)
TW (1) TWI697074B (cg-RX-API-DMAC10.html)
WO (1) WO2015162872A1 (cg-RX-API-DMAC10.html)

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US9240376B2 (en) * 2013-08-16 2016-01-19 Globalfoundries Inc. Self-aligned via fuse
JP6424610B2 (ja) * 2014-04-23 2018-11-21 ソニー株式会社 半導体装置、および製造方法
US9564418B2 (en) 2014-10-08 2017-02-07 Micron Technology, Inc. Interconnect structures with intermetallic palladium joints and associated systems and methods
WO2016143288A1 (en) * 2015-03-12 2016-09-15 Sony Corporation Imaging device, manufacturing method, and electronic device
US9812555B2 (en) * 2015-05-28 2017-11-07 Semiconductor Components Industries, Llc Bottom-gate thin-body transistors for stacked wafer integrated circuits
JP6743035B2 (ja) * 2015-10-05 2020-08-19 ソニーセミコンダクタソリューションズ株式会社 撮像装置、製造方法
JP6639188B2 (ja) * 2015-10-21 2020-02-05 ソニーセミコンダクタソリューションズ株式会社 半導体装置、および製造方法
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