JP6416553B2 - 半導体素子及び半導体素子の製造方法 - Google Patents

半導体素子及び半導体素子の製造方法 Download PDF

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JP6416553B2
JP6416553B2 JP2014178404A JP2014178404A JP6416553B2 JP 6416553 B2 JP6416553 B2 JP 6416553B2 JP 2014178404 A JP2014178404 A JP 2014178404A JP 2014178404 A JP2014178404 A JP 2014178404A JP 6416553 B2 JP6416553 B2 JP 6416553B2
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insulating film
layer
heater
semiconductor
forming
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JP2016054168A (ja
JP2016054168A5 (enExample
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大資 木村
大資 木村
太郎 長谷川
太郎 長谷川
利之 田口
利之 田口
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Sumitomo Electric Device Innovations Inc
Sumitomo Electric Industries Ltd
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Sumitomo Electric Device Innovations Inc
Sumitomo Electric Industries Ltd
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JP2014178404A 2014-09-02 2014-09-02 半導体素子及び半導体素子の製造方法 Active JP6416553B2 (ja)

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JP2014178404A JP6416553B2 (ja) 2014-09-02 2014-09-02 半導体素子及び半導体素子の製造方法

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JP2014178404A JP6416553B2 (ja) 2014-09-02 2014-09-02 半導体素子及び半導体素子の製造方法

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JP2016054168A JP2016054168A (ja) 2016-04-14
JP2016054168A5 JP2016054168A5 (enExample) 2017-09-07
JP6416553B2 true JP6416553B2 (ja) 2018-10-31

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Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20170338625A1 (en) * 2016-05-20 2017-11-23 Macom Technology Solutions Holdings, Inc. Semiconductor lasers and processes for the planarization of semiconductor lasers
JP7145765B2 (ja) * 2017-02-07 2022-10-03 古河電気工業株式会社 光導波路構造
JP7012409B2 (ja) * 2018-03-14 2022-01-28 古河電気工業株式会社 光導波路構造及びその製造方法
WO2020162447A1 (ja) * 2019-02-08 2020-08-13 古河電気工業株式会社 半導体素子
JP7640273B2 (ja) * 2021-02-04 2025-03-05 古河電気工業株式会社 光半導体装置および光半導体装置の製造方法
JP7717466B2 (ja) * 2021-02-12 2025-08-04 古河電気工業株式会社 光半導体装置

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6318678A (ja) * 1986-07-11 1988-01-26 Hitachi Ltd 半導体装置の製造方法
JPS63122573A (ja) * 1986-11-13 1988-05-26 Tokyo Electric Co Ltd サ−マルヘツド
JPH07240564A (ja) * 1994-03-01 1995-09-12 Sharp Corp 温度制御型ｓｈｇレーザ
JPH08330665A (ja) * 1995-05-31 1996-12-13 Nec Corp 光半導体レーザの製造方法
JP2000341300A (ja) * 1999-05-31 2000-12-08 Fujitsu Ltd Ａｔｍネットワークに於けるセル多重化システム
JP3843762B2 (ja) * 2001-05-14 2006-11-08 日立電線株式会社 薄膜ヒータ付き導波路型光部品及びその製造方法
JP2003084251A (ja) * 2001-09-14 2003-03-19 Hitachi Cable Ltd 光導波路素子
JP3965060B2 (ja) * 2002-02-08 2007-08-22 日立電線株式会社 薄膜ヒータ付き導波路型光部品の製造方法
KR100828362B1 (ko) * 2005-11-04 2008-05-08 삼성전자주식회사 잉크젯 프린트헤드용 히터 및 이 히터를 구비하는 잉크젯프린트헤드
JP5303581B2 (ja) * 2006-03-30 2013-10-02 住友電工デバイス・イノベーション株式会社 光半導体装置
JP5061951B2 (ja) * 2008-02-26 2012-10-31 富士通株式会社 光半導体装置の製造方法
JP2010182999A (ja) * 2009-02-09 2010-08-19 Nec Corp 半導体レーザ、光送信デバイス、光送受信装置、光送信デバイスの駆動方法
JP2010281947A (ja) * 2009-06-03 2010-12-16 Nec Corp 光導波路デバイス

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