JP6396834B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP6396834B2
JP6396834B2 JP2015059529A JP2015059529A JP6396834B2 JP 6396834 B2 JP6396834 B2 JP 6396834B2 JP 2015059529 A JP2015059529 A JP 2015059529A JP 2015059529 A JP2015059529 A JP 2015059529A JP 6396834 B2 JP6396834 B2 JP 6396834B2
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Japan
Prior art keywords
active region
channel transistor
connection wiring
local connection
semiconductor device
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JP2015059529A
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Japanese (ja)
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JP2016181537A (ja
JP2016181537A5 (enExample
Inventor
岡垣　健
健 岡垣
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Renesas Electronics Corp
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Renesas Electronics Corp
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Application filed by Renesas Electronics Corp filed Critical Renesas Electronics Corp
Priority to JP2015059529A priority Critical patent/JP6396834B2/ja
Priority to US15/049,127 priority patent/US9768172B2/en
Priority to EP16158030.3A priority patent/EP3073528A1/en
Priority to CN201620251282.7U priority patent/CN205645809U/zh
Priority to CN201610188337.9A priority patent/CN105990339B/zh
Priority to TW105108610A priority patent/TW201705371A/zh
Priority to KR1020160034064A priority patent/KR20160113989A/ko
Publication of JP2016181537A publication Critical patent/JP2016181537A/ja
Priority to US15/677,546 priority patent/US9991263B2/en
Publication of JP2016181537A5 publication Critical patent/JP2016181537A5/ja
Priority to US15/973,186 priority patent/US20180254276A1/en
Application granted granted Critical
Publication of JP6396834B2 publication Critical patent/JP6396834B2/ja
Priority to US16/241,048 priority patent/US10541240B2/en
Priority to US16/710,894 priority patent/US10903214B2/en
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H10D84/853—Complementary IGFETs, e.g. CMOS comprising FinFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/90—Masterslice integrated circuits
    • H10D84/903—Masterslice integrated circuits comprising field effect technology
    • H10D84/907—CMOS gate arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5226—Via connections in a multilevel interconnection structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/528—Layout of the interconnection structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/061—Manufacture or treatment of FETs having Schottky gates
    • H10D30/0612—Manufacture or treatment of FETs having Schottky gates of lateral single-gate Schottky FETs
    • H10D30/0614—Manufacture or treatment of FETs having Schottky gates of lateral single-gate Schottky FETs using processes wherein the final gate is made after the completion of the source and drain regions, e.g. gate-last processes using dummy gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/061—Manufacture or treatment of FETs having Schottky gates
    • H10D30/0612—Manufacture or treatment of FETs having Schottky gates of lateral single-gate Schottky FETs
    • H10D30/0616—Manufacture or treatment of FETs having Schottky gates of lateral single-gate Schottky FETs using processes wherein the final gate is made before the completion of the source and drain regions, e.g. gate-first processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/611—Insulated-gate field-effect transistors [IGFET] having multiple independently-addressable gate electrodes influencing the same channel
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/62—Fin field-effect transistors [FinFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/90—Masterslice integrated circuits
    • H10D84/903—Masterslice integrated circuits comprising field effect technology
    • H10D84/907—CMOS gate arrays
    • H10D84/909—Microarchitecture
    • H10D84/922—Microarchitecture relative P to N transistor sizes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/90—Masterslice integrated circuits
    • H10D84/903—Masterslice integrated circuits comprising field effect technology
    • H10D84/907—CMOS gate arrays
    • H10D84/909—Microarchitecture
    • H10D84/922—Microarchitecture relative P to N transistor sizes
    • H10D84/925—Microarchitecture relative P to N transistor sizes for delay time adaptation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/10—Integrated device layouts
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
    • H03K5/13—Arrangements having a single output and transforming input signals into pulses delivered at desired time intervals
    • H03K5/133—Arrangements having a single output and transforming input signals into pulses delivered at desired time intervals using a chain of active delay devices
    • H03K5/134—Arrangements having a single output and transforming input signals into pulses delivered at desired time intervals using a chain of active delay devices with field-effect transistors

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Geometry (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • General Engineering & Computer Science (AREA)
  • Semiconductor Memories (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)
JP2015059529A 2015-03-23 2015-03-23 半導体装置 Active JP6396834B2 (ja)

Priority Applications (11)

Application Number Priority Date Filing Date Title
JP2015059529A JP6396834B2 (ja) 2015-03-23 2015-03-23 半導体装置
US15/049,127 US9768172B2 (en) 2015-03-23 2016-02-21 Semiconductor device with series connected inverters having different number of active regions
EP16158030.3A EP3073528A1 (en) 2015-03-23 2016-03-01 Semiconductor device
CN201620251282.7U CN205645809U (zh) 2015-03-23 2016-03-17 半导体器件
CN201610188337.9A CN105990339B (zh) 2015-03-23 2016-03-17 半导体器件
TW105108610A TW201705371A (zh) 2015-03-23 2016-03-21 半導體裝置
KR1020160034064A KR20160113989A (ko) 2015-03-23 2016-03-22 반도체 장치
US15/677,546 US9991263B2 (en) 2015-03-23 2017-08-15 Semiconductor device
US15/973,186 US20180254276A1 (en) 2015-03-23 2018-05-07 Semiconductor device
US16/241,048 US10541240B2 (en) 2015-03-23 2019-01-07 Semiconductor device
US16/710,894 US10903214B2 (en) 2015-03-23 2019-12-11 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2015059529A JP6396834B2 (ja) 2015-03-23 2015-03-23 半導体装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2018161319A Division JP6598949B2 (ja) 2018-08-30 2018-08-30 半導体装置

Publications (3)

Publication Number Publication Date
JP2016181537A JP2016181537A (ja) 2016-10-13
JP2016181537A5 JP2016181537A5 (enExample) 2018-01-18
JP6396834B2 true JP6396834B2 (ja) 2018-09-26

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US (5) US9768172B2 (enExample)
EP (1) EP3073528A1 (enExample)
JP (1) JP6396834B2 (enExample)
KR (1) KR20160113989A (enExample)
CN (2) CN105990339B (enExample)
TW (1) TW201705371A (enExample)

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US10141256B2 (en) * 2016-04-21 2018-11-27 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and layout design thereof
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WO2019116883A1 (ja) * 2017-12-12 2019-06-20 株式会社ソシオネクスト 半導体集積回路装置
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US11183576B2 (en) * 2019-02-13 2021-11-23 Micron Technology, Inc. Gate electrode layout with expanded portions over active and isolation regions
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Also Published As

Publication number Publication date
CN105990339A (zh) 2016-10-05
US20190139958A1 (en) 2019-05-09
US20180254276A1 (en) 2018-09-06
US10903214B2 (en) 2021-01-26
CN205645809U (zh) 2016-10-12
CN105990339B (zh) 2021-08-17
US9991263B2 (en) 2018-06-05
US10541240B2 (en) 2020-01-21
US20170373065A1 (en) 2017-12-28
US20160284707A1 (en) 2016-09-29
JP2016181537A (ja) 2016-10-13
US20200119017A1 (en) 2020-04-16
US9768172B2 (en) 2017-09-19
EP3073528A1 (en) 2016-09-28
TW201705371A (zh) 2017-02-01
KR20160113989A (ko) 2016-10-04

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