JP6391290B2 - 撮像装置 - Google Patents

撮像装置 Download PDF

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Publication number
JP6391290B2
JP6391290B2 JP2014096530A JP2014096530A JP6391290B2 JP 6391290 B2 JP6391290 B2 JP 6391290B2 JP 2014096530 A JP2014096530 A JP 2014096530A JP 2014096530 A JP2014096530 A JP 2014096530A JP 6391290 B2 JP6391290 B2 JP 6391290B2
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JP
Japan
Prior art keywords
voltage
transistor
input
bias current
load transistor
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JP2014096530A
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English (en)
Japanese (ja)
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JP2015216434A (ja
JP2015216434A5 (enExample
Inventor
孝正 桜木
孝正 桜木
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Canon Inc
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Canon Inc
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Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2014096530A priority Critical patent/JP6391290B2/ja
Priority to US14/700,332 priority patent/US9986190B2/en
Publication of JP2015216434A publication Critical patent/JP2015216434A/ja
Publication of JP2015216434A5 publication Critical patent/JP2015216434A5/ja
Priority to US15/901,807 priority patent/US10764524B2/en
Application granted granted Critical
Publication of JP6391290B2 publication Critical patent/JP6391290B2/ja
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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/766—Addressed sensors, e.g. MOS or CMOS sensors comprising control or output lines used for a plurality of functions, e.g. for pixel output, driving, reset or power
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/778—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising amplifiers shared between a plurality of pixels, i.e. at least one part of the amplifier must be on the sensor array itself
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
JP2014096530A 2014-05-08 2014-05-08 撮像装置 Active JP6391290B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2014096530A JP6391290B2 (ja) 2014-05-08 2014-05-08 撮像装置
US14/700,332 US9986190B2 (en) 2014-05-08 2015-04-30 Imaging apparatus, method of driving imaging apparatus, and apparatus using the imaging apparatus
US15/901,807 US10764524B2 (en) 2014-05-08 2018-02-21 Imaging apparatus, method of driving imaging apparatus, and apparatus using the imaging apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014096530A JP6391290B2 (ja) 2014-05-08 2014-05-08 撮像装置

Publications (3)

Publication Number Publication Date
JP2015216434A JP2015216434A (ja) 2015-12-03
JP2015216434A5 JP2015216434A5 (enExample) 2017-06-15
JP6391290B2 true JP6391290B2 (ja) 2018-09-19

Family

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Family Applications (1)

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JP2014096530A Active JP6391290B2 (ja) 2014-05-08 2014-05-08 撮像装置

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US (2) US9986190B2 (enExample)
JP (1) JP6391290B2 (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9979916B2 (en) 2014-11-21 2018-05-22 Canon Kabushiki Kaisha Imaging apparatus and imaging system
JP6539149B2 (ja) 2015-08-13 2019-07-03 キヤノン株式会社 撮像装置及び撮像システム
US9900539B2 (en) 2015-09-10 2018-02-20 Canon Kabushiki Kaisha Solid-state image pickup element, and image pickup system
JP6674219B2 (ja) 2015-10-01 2020-04-01 キヤノン株式会社 固体撮像装置及び撮像システム
JP6632421B2 (ja) 2016-02-22 2020-01-22 キヤノン株式会社 固体撮像装置および撮像装置
JP2019106561A (ja) * 2016-03-29 2019-06-27 株式会社村田製作所 画像センサ
JP6833531B2 (ja) 2017-01-30 2021-02-24 キヤノン株式会社 固体撮像装置
JP7129671B2 (ja) 2017-10-16 2022-09-02 パナソニックＩｐマネジメント株式会社 撮像装置及びカメラシステム
JP7292054B2 (ja) * 2019-02-27 2023-06-16 日本放送協会 画素信号読み出し回路および積層型固体撮像装置
JP7341724B2 (ja) * 2019-05-23 2023-09-11 キヤノン株式会社 光電変換装置および光電変換システム

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3793016B2 (ja) 2000-11-06 2006-07-05 キヤノン株式会社 固体撮像装置及び撮像システム
JP2003228427A (ja) * 2002-02-01 2003-08-15 Sony Corp 定電流回路および固体撮像装置
JP4661212B2 (ja) 2004-12-27 2011-03-30 ソニー株式会社 物理情報取得方法および物理情報取得装置並びに半導体装置
US7443237B1 (en) * 2006-06-02 2008-10-28 Linear Technology Corporation Folded cascode amplifier having improved slew performance
EP1942663B1 (en) * 2007-01-02 2013-07-24 STMicroelectronics (Research & Development) Limited Column current source
JP2008271159A (ja) * 2007-04-19 2008-11-06 Matsushita Electric Ind Co Ltd 固体撮像装置
JP5156434B2 (ja) 2008-02-29 2013-03-06 キヤノン株式会社 撮像装置および撮像システム
JP5180713B2 (ja) * 2008-07-16 2013-04-10 キヤノン株式会社 光電変換装置、その駆動方法及び撮像装置
JP5458690B2 (ja) * 2009-06-22 2014-04-02 ソニー株式会社 固体撮像装置およびカメラ
US8314873B2 (en) * 2009-09-30 2012-11-20 Truesense Imaging, Inc. Methods for capturing and reading out images from an image sensor
JP5482137B2 (ja) * 2009-11-19 2014-04-23 ソニー株式会社 固体撮像装置、負荷電流源回路
JP5484208B2 (ja) 2010-06-14 2014-05-07 キヤノン株式会社 撮像装置
JP5645543B2 (ja) 2010-08-20 2014-12-24 キヤノン株式会社 撮像装置
JP5810493B2 (ja) * 2010-09-03 2015-11-11 ソニー株式会社 半導体集積回路、電子機器、固体撮像装置、撮像装置
JP5814539B2 (ja) 2010-11-17 2015-11-17 キヤノン株式会社 撮像装置
JP6021360B2 (ja) * 2012-03-07 2016-11-09 キヤノン株式会社 撮像装置、撮像システム、および撮像装置の駆動方法。
TWI634791B (zh) * 2013-02-27 2018-09-01 新力股份有限公司 Solid-state imaging device, driving method, and electronic device
CN103259984B (zh) * 2013-05-07 2016-04-27 上海华力微电子有限公司 Cmos电荷泵电路
JP2015080178A (ja) 2013-10-18 2015-04-23 キヤノン株式会社 撮像素子、撮像装置、カメラ、および、撮像装置の駆動方法
JP6300488B2 (ja) 2013-10-22 2018-03-28 キヤノン株式会社 撮像装置、固体撮像素子及びカメラ
JP2016019137A (ja) 2014-07-08 2016-02-01 キヤノン株式会社 固体撮像装置及びその駆動方法

Also Published As

Publication number Publication date
US20150326812A1 (en) 2015-11-12
US9986190B2 (en) 2018-05-29
US20180184033A1 (en) 2018-06-28
JP2015216434A (ja) 2015-12-03
US10764524B2 (en) 2020-09-01

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