JP6383700B2 - 薄板状ワークの製造方法及び両頭平面研削装置 - Google Patents

薄板状ワークの製造方法及び両頭平面研削装置 Download PDF

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Publication number
JP6383700B2
JP6383700B2 JP2015078531A JP2015078531A JP6383700B2 JP 6383700 B2 JP6383700 B2 JP 6383700B2 JP 2015078531 A JP2015078531 A JP 2015078531A JP 2015078531 A JP2015078531 A JP 2015078531A JP 6383700 B2 JP6383700 B2 JP 6383700B2
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Japan
Prior art keywords
static pressure
workpiece
pair
adjustment
grinding
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JP2015078531A
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English (en)
Japanese (ja)
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JP2016198826A (ja
Inventor
篤志 芝中
篤志 芝中
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Koyo Machine Industries Co Ltd
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Koyo Machine Industries Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koyo Machine Industries Co Ltd filed Critical Koyo Machine Industries Co Ltd
Priority to JP2015078531A priority Critical patent/JP6383700B2/ja
Priority to CN201610182159.9A priority patent/CN106041728B/zh
Priority to TW105110045A priority patent/TWI678262B/zh
Priority to KR1020160042115A priority patent/KR102499588B1/ko
Publication of JP2016198826A publication Critical patent/JP2016198826A/ja
Application granted granted Critical
Publication of JP6383700B2 publication Critical patent/JP6383700B2/ja
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B41/00Component parts such as frames, beds, carriages, headstocks
    • B24B41/06Work supports, e.g. adjustable steadies
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304Mechanical treatment, e.g. grinding, polishing, cutting
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/04Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/04Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/07Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
    • B24B37/08Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for double side lapping
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B41/00Component parts such as frames, beds, carriages, headstocks
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B7/00Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
    • B24B7/10Single-purpose machines or devices
    • B24B7/16Single-purpose machines or devices for grinding end-faces, e.g. of gauges, rollers, nuts, piston rings
    • B24B7/17Single-purpose machines or devices for grinding end-faces, e.g. of gauges, rollers, nuts, piston rings for simultaneously grinding opposite and parallel end faces, e.g. double disc grinders
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H01L21/46Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
    • H01L21/461Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67155Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H01L21/67219Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one polishing chamber

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Grinding Of Cylindrical And Plane Surfaces (AREA)
  • Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
JP2015078531A 2015-04-07 2015-04-07 薄板状ワークの製造方法及び両頭平面研削装置 Active JP6383700B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2015078531A JP6383700B2 (ja) 2015-04-07 2015-04-07 薄板状ワークの製造方法及び両頭平面研削装置
CN201610182159.9A CN106041728B (zh) 2015-04-07 2016-03-28 薄板状工件的制造方法以及双头平面磨削装置
TW105110045A TWI678262B (zh) 2015-04-07 2016-03-30 薄板狀工件的製造方法以及雙頭平面磨削裝置
KR1020160042115A KR102499588B1 (ko) 2015-04-07 2016-04-06 박판형상 워크의 제조방법 및 양두 평면 연삭장치

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2015078531A JP6383700B2 (ja) 2015-04-07 2015-04-07 薄板状ワークの製造方法及び両頭平面研削装置

Publications (2)

Publication Number Publication Date
JP2016198826A JP2016198826A (ja) 2016-12-01
JP6383700B2 true JP6383700B2 (ja) 2018-08-29

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JP2015078531A Active JP6383700B2 (ja) 2015-04-07 2015-04-07 薄板状ワークの製造方法及び両頭平面研削装置

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Country Link
JP (1) JP6383700B2 (ko)
KR (1) KR102499588B1 (ko)
CN (1) CN106041728B (ko)
TW (1) TWI678262B (ko)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11400563B2 (en) * 2018-12-07 2022-08-02 Disco Corporation Processing method for disk-shaped workpiece
TWI826082B (zh) * 2022-09-08 2023-12-11 大陸商西安奕斯偉材料科技股份有限公司 監控研磨裝置的加工狀態的系統、方法及雙面研磨裝置
CN117226707A (zh) * 2023-11-10 2023-12-15 西安奕斯伟材料科技股份有限公司 驱动环、承载装置及双面研磨装置

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55125761U (ko) * 1979-02-24 1980-09-05
US5989108A (en) * 1996-09-09 1999-11-23 Koyo Machine Industries Co., Ltd. Double side grinding apparatus for flat disklike work
JPH10264024A (ja) * 1997-01-23 1998-10-06 Nippon Seiko Kk 砥石アンバランス測定方法
JPH11114792A (ja) * 1997-10-07 1999-04-27 Canon Inc 研磨装置
JP2005238444A (ja) * 1999-05-07 2005-09-08 Shin Etsu Handotai Co Ltd 両面同時研削方法および両面同時研削盤並びに両面同時ラップ方法および両面同時ラップ盤
JP2002307303A (ja) * 2001-04-10 2002-10-23 Koyo Mach Ind Co Ltd 薄板円板状ワークの両面研削方法および装置
JP3571310B2 (ja) * 2001-06-12 2004-09-29 コマツ電子金属株式会社 半導体ウェーハ剥し装置および半導体ウェーハの製造方法
JP2003236746A (ja) * 2002-02-14 2003-08-26 Sumitomo Heavy Ind Ltd ワーク研削装置
JP3993856B2 (ja) * 2004-01-22 2007-10-17 光洋機械工業株式会社 両頭平面研削装置
US7662023B2 (en) * 2006-01-30 2010-02-16 Memc Electronic Materials, Inc. Double side wafer grinder and methods for assessing workpiece nanotopology
JP4985451B2 (ja) * 2008-02-14 2012-07-25 信越半導体株式会社 ワークの両頭研削装置およびワークの両頭研削方法
JP5463570B2 (ja) * 2008-10-31 2014-04-09 Sumco Techxiv株式会社 ウェハ用両頭研削装置および両頭研削方法
JP5851803B2 (ja) * 2011-03-18 2016-02-03 光洋機械工業株式会社 薄板状ワークの研削方法及び両頭平面研削盤
JP5614397B2 (ja) * 2011-11-07 2014-10-29 信越半導体株式会社 両面研磨方法
JP5872947B2 (ja) * 2012-04-05 2016-03-01 光洋機械工業株式会社 両頭平面研削におけるワーク搬入出方法及び両頭平面研削盤
JP5820329B2 (ja) * 2012-04-24 2015-11-24 光洋機械工業株式会社 両頭平面研削法及び両頭平面研削盤
JP5724958B2 (ja) * 2012-07-03 2015-05-27 信越半導体株式会社 両頭研削装置及びワークの両頭研削方法
JP6033652B2 (ja) * 2012-11-23 2016-11-30 光洋機械工業株式会社 両面研削装置における静圧パッドの熱変形防止装置および両面研削装置
JP6145334B2 (ja) * 2013-06-28 2017-06-07 株式会社荏原製作所 基板処理装置

Also Published As

Publication number Publication date
CN106041728A (zh) 2016-10-26
TWI678262B (zh) 2019-12-01
TW201642999A (zh) 2016-12-16
KR102499588B1 (ko) 2023-02-15
KR20160120237A (ko) 2016-10-17
CN106041728B (zh) 2020-02-07
JP2016198826A (ja) 2016-12-01

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