JP6370684B2 - 除害装置 - Google Patents
除害装置 Download PDFInfo
- Publication number
- JP6370684B2 JP6370684B2 JP2014231944A JP2014231944A JP6370684B2 JP 6370684 B2 JP6370684 B2 JP 6370684B2 JP 2014231944 A JP2014231944 A JP 2014231944A JP 2014231944 A JP2014231944 A JP 2014231944A JP 6370684 B2 JP6370684 B2 JP 6370684B2
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- JP
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- Prior art keywords
- circulating water
- flow rate
- hydrogen fluoride
- concentration
- water
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D53/00—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols
- B01D53/34—Chemical or biological purification of waste gases
- B01D53/96—Regeneration, reactivation or recycling of reactants
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D21/00—Separation of suspended solid particles from liquids by sedimentation
- B01D21/26—Separation of sediment aided by centrifugal force or centripetal force
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D21/00—Separation of suspended solid particles from liquids by sedimentation
- B01D21/26—Separation of sediment aided by centrifugal force or centripetal force
- B01D21/267—Separation of sediment aided by centrifugal force or centripetal force by using a cyclone
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D47/00—Separating dispersed particles from gases, air or vapours by liquid as separating agent
- B01D47/14—Packed scrubbers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D53/00—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols
- B01D53/34—Chemical or biological purification of waste gases
- B01D53/38—Removing components of undefined structure
- B01D53/40—Acidic components
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D53/00—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols
- B01D53/34—Chemical or biological purification of waste gases
- B01D53/46—Removing components of defined structure
- B01D53/68—Halogens or halogen compounds
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D53/00—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols
- B01D53/34—Chemical or biological purification of waste gases
- B01D53/74—General processes for purification of waste gases; Apparatus or devices specially adapted therefor
- B01D53/77—Liquid phase processes
- B01D53/78—Liquid phase processes with gas-liquid contact
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D2252/00—Absorbents, i.e. solvents and liquid materials for gas absorption
- B01D2252/10—Inorganic absorbents
- B01D2252/103—Water
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D2257/00—Components to be removed
- B01D2257/20—Halogens or halogen compounds
- B01D2257/204—Inorganic halogen compounds
- B01D2257/2047—Hydrofluoric acid
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D2257/00—Components to be removed
- B01D2257/55—Compounds of silicon, phosphorus, germanium or arsenic
- B01D2257/553—Compounds comprising hydrogen, e.g. silanes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D2258/00—Sources of waste gases
- B01D2258/02—Other waste gases
- B01D2258/0216—Other waste gases from CVD treatment or semi-conductor manufacturing
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D53/00—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols
- B01D53/34—Chemical or biological purification of waste gases
- B01D53/346—Controlling the process
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02C—CAPTURE, STORAGE, SEQUESTRATION OR DISPOSAL OF GREENHOUSE GASES [GHG]
- Y02C20/00—Capture or disposal of greenhouse gases
- Y02C20/30—Capture or disposal of greenhouse gases of perfluorocarbons [PFC], hydrofluorocarbons [HFC] or sulfur hexafluoride [SF6]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Description
プロセスチャンバ10は、図示しない半導体製造装置の一部である。プロセスチャンバ10内に配置された図示しない半導体ウェーハの表面に薄膜を被着させるCVD処理を施すことにより、デバイスを得る。なお、図1では、除害装置1台に対してプロセスチャンバ1台が接続されているが、除害装置1台に複数のプロセスチャンバが接続されても構わない。
することができる。
20・・・ ドライポンプ
30・・・ 除害装置
31・・・ 制御装置
32a・・・流量計
33・・・ 加熱手段
34・・・ ドレインタンク
35・・・ パックドタワー
36・・・ 遠心分離器
37・・・ 熱交換器
38・・・ 伝導率センサ(酸性度計測手段)
39・・・ 補給水供給手段
G1・・・ プロセスガス
G2・・・ クリーニングガス
G3・・・ フッ化水素ガス
R1・・・ 酸排水
R2・・・ 循環水
r ・・・ 循環経路
v1・・・ 第1の弁(排水弁)
v2・・・ 第2の弁
v3・・・ 第3の弁
v4・・・ 第4の弁
Claims (6)
- ケイ素を含む排出ガス及びフッ素を含む排出ガスを処理する除害装置であって、
前記ケイ素を含む排出ガスから生成された二酸化ケイ素及び前記フッ素を含む排出ガスから生成されたフッ化水素を溶解させる循環水を収容するドレインタンクと、
前記ドレインタンクに連通された循環経路と、
前記循環経路に設けられて前記循環水の一部を外部に排水する排水弁と、
前記循環経路に補給水を供給する補給水供給手段と、
前記排水弁及び前記補給水供給手段を制御して、前記循環経路内の前記循環水の平均排水流量を制御する制御手段と、
を備え、
前記制御手段は、
前記循環水中の前記二酸化ケイ素の濃度と前記循環水中の前記フッ化水素の濃度との比が珪フッ化水素酸を生成可能な所定値以上の場合には、前記循環水の前記平均排水流量を低流量に下げ、
前記循環水中の前記二酸化ケイ素の濃度と前記循環水中の前記フッ化水素の濃度との比が前記所定値未満の場合には、前記循環水の前記平均排水流量を前記低流量より大きい高流量に上げることを特徴とする除害装置。 - 前記制御手段は、前記ケイ素を含む排出ガスの積算流量と前記循環水の前記平均排水流量と前記補給水の流量とに基づいて前記二酸化ケイ素の濃度を導出することを特徴とする請求項1記載の除害装置。
- 前記制御手段は、前記フッ素を含む排出ガスの積算流量と前記循環水の前記平均排水流量と前記補給水の流量とに基づいて前記フッ化水素の濃度を導出することを特徴とする請求項1又は2記載の除害装置。
- 前記循環水の酸性度を計測する酸性度計測手段を備えていることを特徴とする請求項1乃至3の何れか1項記載の除害装置。
- 前記酸性度は、伝導率センサが計測した前記循環水中のフッ化水素濃度に基づいて導出されることを特徴とする請求項4記載の除害装置。
- 前記循環水から前記二酸化ケイ素を分離する遠心分離器を備えていることを特徴とする請求項1乃至5のいずれか1項記載の除害装置。
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014231944A JP6370684B2 (ja) | 2014-11-14 | 2014-11-14 | 除害装置 |
US15/523,787 US10618004B2 (en) | 2014-11-14 | 2015-11-05 | Abatement device |
CN201580059249.2A CN107106976B (zh) | 2014-11-14 | 2015-11-05 | 除害装置 |
SG11201703833UA SG11201703833UA (en) | 2014-11-14 | 2015-11-05 | Abatement device |
PCT/JP2015/081146 WO2016076190A1 (ja) | 2014-11-14 | 2015-11-05 | 除害装置 |
EP15858179.3A EP3219380B1 (en) | 2014-11-14 | 2015-11-05 | Detoxifying device |
KR1020177010912A KR102406433B1 (ko) | 2014-11-14 | 2015-11-05 | 제해 장치 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014231944A JP6370684B2 (ja) | 2014-11-14 | 2014-11-14 | 除害装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2016093792A JP2016093792A (ja) | 2016-05-26 |
JP6370684B2 true JP6370684B2 (ja) | 2018-08-08 |
Family
ID=55954279
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014231944A Active JP6370684B2 (ja) | 2014-11-14 | 2014-11-14 | 除害装置 |
Country Status (7)
Country | Link |
---|---|
US (1) | US10618004B2 (ja) |
EP (1) | EP3219380B1 (ja) |
JP (1) | JP6370684B2 (ja) |
KR (1) | KR102406433B1 (ja) |
CN (1) | CN107106976B (ja) |
SG (1) | SG11201703833UA (ja) |
WO (1) | WO2016076190A1 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110291611B (zh) * | 2017-02-09 | 2022-05-17 | 应用材料公司 | 利用水蒸气和氧试剂的等离子体减量技术 |
GB2604652A (en) * | 2021-03-12 | 2022-09-14 | Edwards Ltd | Abatement apparatus |
CN114100352B (zh) * | 2021-10-19 | 2024-02-02 | 安徽京仪自动化装备技术有限公司 | 一种废气洗涤处理系统及控制方法 |
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JP2005334729A (ja) * | 2004-05-25 | 2005-12-08 | Canon Inc | ガス処理方法 |
ITMI20041677A1 (it) | 2004-08-30 | 2004-11-30 | E T C Epitaxial Technology Ct | Processo di pulitura e processo operativo per un reattore cvd. |
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JP4394555B2 (ja) * | 2004-09-30 | 2010-01-06 | 株式会社日立製作所 | フッ素化合物含有ガスの処理方法及び処理装置 |
JP4434933B2 (ja) * | 2004-12-03 | 2010-03-17 | 株式会社荏原製作所 | 排ガスの処理方法及び処理装置 |
JP4576312B2 (ja) | 2005-10-03 | 2010-11-04 | 東北電力株式会社 | 四フッ化ケイ素の製造方法、及びそれに用いる製造装置 |
US7718151B1 (en) * | 2006-04-07 | 2010-05-18 | Liang Hu | Methods and systems for deacidizing gaseous mixtures |
GB0624931D0 (en) * | 2006-12-14 | 2007-01-24 | Boc Group Plc | Method of treating a gas stream |
JP2009018290A (ja) * | 2007-07-13 | 2009-01-29 | Ebara Corp | 排ガス洗浄装置 |
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JP5554482B2 (ja) | 2008-09-08 | 2014-07-23 | 大陽日酸株式会社 | 排ガス処理方法 |
AT12170U1 (de) | 2008-09-26 | 2011-12-15 | Siemens Vai Metals Tech Gmbh | Verfahren und vorrichtung zur trockenen entstaubung und reinigung von bei der eisenerzeugung oder kohlevergasung produziertem gas |
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RU2529524C2 (ru) | 2010-02-25 | 2014-09-27 | Альфа Лаваль Корпорейт Аб | Устройство и способ очистки выхлопного газа и жидкости для промывки газа |
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JPWO2011162023A1 (ja) | 2010-06-21 | 2013-08-19 | エドワーズ株式会社 | ガス処理システム |
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JP5941028B2 (ja) * | 2012-11-15 | 2016-06-29 | オー・ジー株式会社 | Si含有フッ酸系廃液からSiを除去する方法及びSi含有フッ酸系混酸廃液からフッ酸を回収する方法 |
-
2014
- 2014-11-14 JP JP2014231944A patent/JP6370684B2/ja active Active
-
2015
- 2015-11-05 KR KR1020177010912A patent/KR102406433B1/ko active IP Right Grant
- 2015-11-05 EP EP15858179.3A patent/EP3219380B1/en active Active
- 2015-11-05 CN CN201580059249.2A patent/CN107106976B/zh active Active
- 2015-11-05 US US15/523,787 patent/US10618004B2/en active Active
- 2015-11-05 WO PCT/JP2015/081146 patent/WO2016076190A1/ja active Application Filing
- 2015-11-05 SG SG11201703833UA patent/SG11201703833UA/en unknown
Also Published As
Publication number | Publication date |
---|---|
US10618004B2 (en) | 2020-04-14 |
CN107106976A (zh) | 2017-08-29 |
KR102406433B1 (ko) | 2022-06-08 |
US20180015413A1 (en) | 2018-01-18 |
EP3219380A4 (en) | 2018-06-06 |
CN107106976B (zh) | 2020-09-25 |
SG11201703833UA (en) | 2017-06-29 |
WO2016076190A1 (ja) | 2016-05-19 |
EP3219380B1 (en) | 2020-10-21 |
EP3219380A1 (en) | 2017-09-20 |
JP2016093792A (ja) | 2016-05-26 |
KR20170083538A (ko) | 2017-07-18 |
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