JP6368754B2 - 短絡のリスクが減少する電子コンポーネントを製造するための方法 - Google Patents
短絡のリスクが減少する電子コンポーネントを製造するための方法 Download PDFInfo
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- JP6368754B2 JP6368754B2 JP2016197836A JP2016197836A JP6368754B2 JP 6368754 B2 JP6368754 B2 JP 6368754B2 JP 2016197836 A JP2016197836 A JP 2016197836A JP 2016197836 A JP2016197836 A JP 2016197836A JP 6368754 B2 JP6368754 B2 JP 6368754B2
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
- H10K19/202—Integrated devices comprising a common active layer
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0009—RRAM elements whose operation depends upon chemical change
- G11C13/0014—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
- G11C13/0016—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material comprising polymers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0009—RRAM elements whose operation depends upon chemical change
- G11C13/0014—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/50—Resistive cell structure aspects
- G11C2213/51—Structure including a barrier layer preventing or limiting migration, diffusion of ions or charges or formation of electrolytes near an electrode
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/50—Resistive cell structure aspects
- G11C2213/55—Structure including two electrodes, a memory active layer and at least two other layers which can be a passive or source or reservoir layer or a less doped memory active layer
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/70—Resistive array aspects
- G11C2213/77—Array wherein the memory element being directly connected to the bit lines and word lines without any access device being used
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/70—Resistive array aspects
- G11C2213/80—Array wherein the substrate, the cell, the conductors and the access device are all made up of organic materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
- H10K10/20—Organic diodes
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
- Y10T29/49155—Manufacturing circuit on or in base
Description
Claims (7)
- 短絡のリスクが減少する電子コンポーネントを製造するための方法であって、
フレキシブルな基板を与える工程と、
前記基板上に電気的活性部を配置する工程であって、前記電気的活性部は、底部電極層、頂部電極層および、前記底部電極層と前記頂部電極層との間の少なくともひとつの絶縁体または半絶縁体層を有する積層体として与えられる、工程と、
前記電気的活性部の頂部に保護層流体材料を付着する工程と、
前記絶縁体または半絶縁体層の極性を複数回のサイクルで切り替えるよう、前記電気的活性部を電気的に動作させる工程と、
前記保護層流体材料を硬化させる工程と
を備える方法。 - 前記保護層流体材料を付着する工程の前に、前記電気的活性部上にバッファ層を配置する工程をさらに備える、ことを特徴とする請求項1に記載の方法。
- 前記バッファ層を配置する工程は、前記バッファ層を前記電気的活性部の上に印刷する工程を含む、ことを特徴とする請求項2に記載の方法。
- 前記電気的活性部を電気的に動作させる工程は、前記絶縁体または半絶縁体層の抗電圧より大きくかつ極性が逆の電圧を印加することにより、前記絶縁体または半絶縁体層内の前記極性を切り替えることを含む、ことを特徴とする請求項1から3のいずれか一項に記載の方法。
- 前記複数回のサイクルの数は、100から300である、ことを特徴とする請求項4に記載の方法。
- 前記電気的活性部を配置する工程は、前記底部電極層、前記絶縁体または半絶縁体層、および、前記頂部電極層を、基板上にこの順に印刷する工程を含む、ことを特徴とする請求項1から5のいずれか一項に記載の方法。
- 前記保護層流体材料を付着する工程は、前記保護層流体材料の保護層を印刷する工程を含む、ことを特徴とする請求項1から6のいずれか一項に記載の方法。
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SE1150594-8 | 2011-06-27 | ||
EPPCT/EP2011/060740 | 2011-06-27 | ||
SE1150594A SE1150594A1 (sv) | 2011-06-27 | 2011-06-27 | Kortslutningsreducering i en elektronisk komponent, innefattande en stapel med lager anordnade på ett flexibelt substrat |
PCT/EP2011/060740 WO2013000501A1 (en) | 2011-06-27 | 2011-06-27 | Short circuit reduction in a ferroelectric memory cell comprising a stack of layers arranged on a flexible substrate |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014517611A Division JP6023188B2 (ja) | 2011-06-27 | 2012-06-21 | フレキシブルな基板上に設けられた積層体を含む電子コンポーネント中の短絡回路の低減 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2017034271A JP2017034271A (ja) | 2017-02-09 |
JP6368754B2 true JP6368754B2 (ja) | 2018-08-01 |
Family
ID=50169873
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014517611A Active JP6023188B2 (ja) | 2011-06-27 | 2012-06-21 | フレキシブルな基板上に設けられた積層体を含む電子コンポーネント中の短絡回路の低減 |
JP2016197836A Active JP6368754B2 (ja) | 2011-06-27 | 2016-10-06 | 短絡のリスクが減少する電子コンポーネントを製造するための方法 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014517611A Active JP6023188B2 (ja) | 2011-06-27 | 2012-06-21 | フレキシブルな基板上に設けられた積層体を含む電子コンポーネント中の短絡回路の低減 |
Country Status (5)
Country | Link |
---|---|
US (1) | US9934836B2 (ja) |
EP (2) | EP3118853B1 (ja) |
JP (2) | JP6023188B2 (ja) |
CN (2) | CN107039484B (ja) |
WO (1) | WO2013000825A1 (ja) |
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US10165689B1 (en) | 2017-08-30 | 2018-12-25 | Xerox Corporation | Method for forming circuits for three-dimensional parts and devices formed thereby |
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-
2012
- 2012-06-21 CN CN201610908814.4A patent/CN107039484B/zh active Active
- 2012-06-21 EP EP16186337.8A patent/EP3118853B1/en active Active
- 2012-06-21 JP JP2014517611A patent/JP6023188B2/ja active Active
- 2012-06-21 EP EP12730477.2A patent/EP2740122B1/en active Active
- 2012-06-21 CN CN201280031644.6A patent/CN103620681B/zh active Active
- 2012-06-21 WO PCT/EP2012/062025 patent/WO2013000825A1/en active Application Filing
- 2012-06-21 US US14/128,003 patent/US9934836B2/en not_active Expired - Fee Related
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- 2016-10-06 JP JP2016197836A patent/JP6368754B2/ja active Active
Also Published As
Publication number | Publication date |
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EP3118853A1 (en) | 2017-01-18 |
EP2740122B1 (en) | 2016-08-31 |
CN103620681A (zh) | 2014-03-05 |
JP2017034271A (ja) | 2017-02-09 |
US9934836B2 (en) | 2018-04-03 |
CN103620681B (zh) | 2016-11-02 |
US20140216791A1 (en) | 2014-08-07 |
EP2740122A1 (en) | 2014-06-11 |
CN107039484A (zh) | 2017-08-11 |
EP3118853B1 (en) | 2018-06-06 |
JP6023188B2 (ja) | 2016-11-09 |
CN107039484B (zh) | 2020-09-15 |
JP2014520408A (ja) | 2014-08-21 |
WO2013000825A1 (en) | 2013-01-03 |
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