JP6352233B2 - 太陽電池及びその製造方法 - Google Patents
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Description
Claims (16)
- 半導体基板と、
前記半導体基板上に位置するトンネル層と、
前記トンネル層の上に位置し、第2導電型の不純物を含み、多結晶シリコン材質で形成される第2導電型半導体部と、
前記第2導電型半導体部の上に位置し、前記第2導電型の不純物を含む誘電体材質のドーパント層と、
前記半導体基板に接続される第1電極と、
前記ドーパント層を貫通して前記第2導電型半導体部に接続される第2電極とを含み、
前記多結晶シリコン材質で形成される第2導電型半導体部に含有された前記第2導電型の不純物のドーピング濃度は、前記第2電極に接する第1部分が前記トンネル層に接する第2部分よりさらに高く、
前記多結晶シリコン材質で形成される前記第2導電型半導体部に含まれた前記第2導電型の不純物のドーピング濃度は、前記第2部分から前記第1部分に進むほど徐々に増加し、
前記半導体基板の内部に含有された不純物の濃度は、1.0*10 18 /cm 3 より高く、前記半導体基板の内部から前記第2導電型半導体部の方向の半導体基板の表面に近づくほど徐々に増加し、
前記第2導電型半導体部に隣接する前記半導体基板の表面からの不純物濃度は、前記第2導電型半導体部に含まれた前記第2部分の不純物濃度だけ増加して前記第2部分の不純物濃度と連続する、太陽電池。 - 前記第2半導体型半導体部の内で、前記第1部分で前記第2導電型の不純物の第1ドーピング濃度は、5*1019/cm3〜5*1021/cm3であり、
前記第2半導体型半導体部の内、前記第2部分で前記第2導電型の不純物の第2ドーピング濃度は、前記第1ドーピング濃度より低く、5*1018/cm3〜5*1020/cm3である、請求項1に記載の太陽電池。 - 前記第2半導体型半導体部のドーピング濃度は、前記第1部分で前記第2部分に進行すればするほど、線形または非線形の形で連続的に減少する、請求項1に記載の太陽電池。
- 前記第2半導体型半導体部の結晶化度は、トンネル層から離れるほど増加する、請求項1に記載の太陽電池。
- 前記第2半導体型半導体部の厚さは、50nm〜150nmの間であり、
前記ドーパント層の厚さは、25nm〜150nmの間である、請求項1に記載の太陽電池。 - 前記ドーパント層の後面上に位置し、前記ドーパント層の水素より高濃度で水素を含有する誘電体材質の水素注入層をさらに含む、請求項1に記載の太陽電池。
- 前記トンネル層と前記第2半導体型半導体部及び前記ドーパント層は前記半導体基板の後面に位置し、
前記半導体基板の前面に位置し、前記第2導電型の不純物と反対の第1導電型の不純物が前記半導体基板より高濃度で含有される第1導電型半導体部をさらに含む、請求項1に記載の太陽電池。 - 第1導電型の不純物が含有される結晶質シリコン材質の半導体基板の後面上にトンネル層を形成し、前記トンネル層の上に真性非晶質シリコン層を形成し、前記真性非晶質シリコン層の上に前記第1導電型と反対の第2導電型の不純物が含有された誘電体材質のドーパント層を形成し、前記ドーパント層の上に前記第2導電型の不純物が含有されない誘電体材質のキャッピング層を形成する成膜段階と、
前記成膜段階の後、温度が維持されるか上昇する一回の連続した熱処理工程で前記半導体基板の前面に前面電界部を形成し、前記半導体基板の後面にエミッタ部を形成する熱処理段階と、
前記熱処理段階の後、前記半導体基板の前面に接続される第1電極を形成し、前記エミッタ部に接続される第2電極を形成する電極形成段階とを含み、
前記熱処理の段階で、前記のエミッタ部を形成する工程は、
前記真性非晶質シリコン層に含有された水素を除去する脱水素工程と、
前記真性非晶質シリコン層を真性多結晶シリコン材質層に再結晶化させる再結晶化工程と、
前記ドーパント層に含有された前記第2導電型の不純物を前記再結晶化される真性多結晶シリコン材質に拡散及び活性化させるエミッタ部活性化工程とを含み、
前記脱水素化工程、前記再結晶化工程及び、前記エミッタ部活性化工程は、温度が維持されるか上昇する一回の連続した熱処理工程によって実行される、太陽電池の製造方法。 - 前記熱処理段階と、前記電極形成段階の間に、
前記半導体基板の後面に形成されたキャッピング層と前記熱処理段階中に前記前面電界部の前面に形成される酸化膜を除去する段階と、
前記キャッピング層が除去された前記ドーパント層の後面上に前記水素が含有される誘電体材質の水素注入層を形成する段階とをさらに含む、請求項8に記載の太陽電池の製造方法。 - 前記前面電界部を形成する工程は、
前記半導体基板の前面内部に前記第1導電型の不純物を拡散及び活性化させる前面電界部活性化工程を含み、
前記前面電界部活性化工程は、前記エミッタ部活性化工程と共に実行される、請求項8に記載の太陽電池の製造方法。 - 前記熱処理段階は、
前記拡散炉内の温度を第1温度を維持する第1熱処理工程と、
前記第1温度で前記第1温度より高い第2温度に変化する第2熱処理工程と、
前記第2温度を維持する第3熱処理工程と、
前記第2温度で前記第2温度より高い第3温度に変化する第4熱処理工程と、
前記第3温度を維持する第5熱処理工程とを含む、請求項8に記載の太陽電池の製造方法。 - 前記第1熱処理工程乃至前記第5熱処理工程は、同じ拡散炉内で連続的に実行され、
前記第2熱処理工程の時間は、前記第1熱処理工程の時間と前記第3熱処理工程の時間より長く、
前記第3熱処理工程の時間は、前記第1熱処理工程の時間と同じか、さらに長い、請求項11に記載の太陽電池の製造方法。 - 前記第1熱処理工程は、前記拡散炉内の温度を350℃〜450℃の間の第1温度で5分〜15分間置維持し、
前記第3熱処理工程は、前記拡散炉内の温度を500℃〜600℃の間の第2温度で10分〜20分間維持し、
前記第2熱処理工程は、15分〜25分間、前記拡散炉内の温度を前記第1温度から前記第2温度に上昇させ、
前記第5熱処理工程は、前記拡散炉内の温度を800℃〜1000℃の間の第3温度で15分〜30分間維持し、
前記第4熱処理工程は、前記5分〜15分の間、前記拡散炉内の温度を前記第2温度から前記第3温度に上昇させる、請求項11に記載の太陽電池の製造方法。 - 前記脱水素化工程は、前記第1熱処理工程乃至前記第3熱処理工程によって実行される、請求項11に記載の太陽電池の製造方法。
- 前記再結晶化工程は、前記第4熱処理工程によって実行される、請求項11に記載の太陽電池の製造方法。
- 前記エミッタ部活性化工程と前記前面電界部活性化工程は、前記第5熱処理工程によって実行される、請求項11に記載の太陽電池の製造方法。
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US10749069B2 (en) | 2020-08-18 |
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KR20160052267A (ko) | 2016-05-12 |
EP3018719B1 (en) | 2020-12-30 |
US10714654B2 (en) | 2020-07-14 |
US20190157495A1 (en) | 2019-05-23 |
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