JP6351490B2 - パッケージ基板の分割方法 - Google Patents
パッケージ基板の分割方法 Download PDFInfo
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- JP6351490B2 JP6351490B2 JP2014239165A JP2014239165A JP6351490B2 JP 6351490 B2 JP6351490 B2 JP 6351490B2 JP 2014239165 A JP2014239165 A JP 2014239165A JP 2014239165 A JP2014239165 A JP 2014239165A JP 6351490 B2 JP6351490 B2 JP 6351490B2
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- 239000000758 substrate Substances 0.000 title claims description 94
- 238000000034 method Methods 0.000 title claims description 17
- 239000002390 adhesive tape Substances 0.000 claims description 85
- 239000000853 adhesive Substances 0.000 claims description 21
- 230000001070 adhesive effect Effects 0.000 claims description 21
- 230000001678 irradiating effect Effects 0.000 claims description 3
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 claims 1
- 230000007246 mechanism Effects 0.000 description 10
- 238000007789 sealing Methods 0.000 description 7
- 239000012790 adhesive layer Substances 0.000 description 6
- 239000010410 layer Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 239000011347 resin Substances 0.000 description 5
- 229920005989 resin Polymers 0.000 description 5
- 230000002093 peripheral effect Effects 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 239000003292 glue Substances 0.000 description 2
- 230000011218 segmentation Effects 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910000640 Fe alloy Inorganic materials 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/561—Batch processing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/568—Temporary substrate used as encapsulation process aid
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
- H01L2221/68386—Separation by peeling
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Dicing (AREA)
Description
13 枠体
13a 表面
13b 裏面
15 デバイス部
17 余剰部
19 分割予定ライン(ストリート)
21 デバイスパッケージ領域
23 封止部
23a 表面
25 デバイスパッケージ
31 粘着テープ
33 基材層
35 糊層
37 フレーム
41 マスク部材
1 光源
3 吸引装置
3a 吸引溝
3b 流路
5 ピックアップ装置
2 切削装置
4 基台
4a 開口
6 X軸移動テーブル
8 防塵防滴カバー
10 チャックテーブル
10a 保持面
12 クランプ
14 切削ユニット(切削手段)
16 支持構造
18 切削ユニット移動機構(割り出し送り手段)
20 Y軸ガイドレール
22 Y軸移動プレート
24 Y軸ボールネジ
26 Z軸ガイドレール
28 Z軸移動プレート
30 Z軸ボールネジ
32 Z軸パルスモータ
34 カメラ
36 切削ブレード
Claims (2)
- 紫外線硬化型の粘着テープが裏面側に貼着され、表面の分割予定ラインによって複数のデバイスパッケージ領域に区画されたデバイス部と該デバイス部を囲繞する余剰部とを含むパッケージ基板を、該粘着テープを介してチャックテーブルに保持した状態で該分割予定ラインに沿って切削し、複数のデバイスパッケージに分割するパッケージ基板の分割方法であって、
該デバイス部に対応する領域の該粘着テープをマスク部材で覆い、該余剰部に対応する領域の該粘着テープを露出させた後に、該粘着テープに紫外線を照射して該余剰部に対応する領域の該粘着テープの粘着力を低下させる余剰部紫外線照射ステップと、
該余剰部紫外線照射ステップの後、該余剰部に対応する領域の該粘着テープをパッケージ基板から剥離する部分剥離ステップと、
該部分剥離ステップを実施した後、該粘着テープに切り込む高さに位置付けた切削ブレードで該分割予定ラインに沿ってパッケージ基板を切削し、パッケージ基板を複数のデバイスパッケージに分割する分割ステップと、を含み、
該分割ステップにおいて、パッケージ基板から分離された該余剰部を該切削ブレードの回転によって飛散させることで、該粘着テープから該余剰部を除去することを特徴とするパッケージ基板の分割方法。 - 前記分割ステップの後、前記デバイス部に対応する領域の該粘着テープに紫外線を照射して該デバイス部に対応する領域の該粘着テープの粘着力を低下させるデバイス部紫外線照射ステップと、
該デバイス部紫外線照射ステップの後、該粘着テープから該複数のデバイスパッケージを剥離するデバイス剥離ステップと、を含むことを特徴とする請求項1に記載のパッケージ基板の分割方法。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014239165A JP6351490B2 (ja) | 2014-11-26 | 2014-11-26 | パッケージ基板の分割方法 |
TW104133718A TWI641033B (zh) | 2014-11-26 | 2015-10-14 | Method for dividing package substrate |
MYPI2015704033A MY175661A (en) | 2014-11-26 | 2015-11-06 | Package substrate dividing method |
US14/938,491 US9431299B2 (en) | 2014-11-26 | 2015-11-11 | Package substrate dividing method |
CN201510817986.6A CN105633017B (zh) | 2014-11-26 | 2015-11-23 | 封装基板的分割方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014239165A JP6351490B2 (ja) | 2014-11-26 | 2014-11-26 | パッケージ基板の分割方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2016100586A JP2016100586A (ja) | 2016-05-30 |
JP6351490B2 true JP6351490B2 (ja) | 2018-07-04 |
Family
ID=56010940
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014239165A Active JP6351490B2 (ja) | 2014-11-26 | 2014-11-26 | パッケージ基板の分割方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US9431299B2 (ja) |
JP (1) | JP6351490B2 (ja) |
CN (1) | CN105633017B (ja) |
MY (1) | MY175661A (ja) |
TW (1) | TWI641033B (ja) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6804154B2 (ja) * | 2017-03-09 | 2020-12-23 | 株式会社ディスコ | パッケージ基板の加工方法及び切削装置 |
JP6999350B2 (ja) * | 2017-10-05 | 2022-01-18 | 株式会社ディスコ | パッケージ基板の加工方法 |
JP7015668B2 (ja) * | 2017-10-11 | 2022-02-03 | 株式会社ディスコ | 板状物の分割装置 |
KR102434021B1 (ko) * | 2017-11-13 | 2022-08-24 | 삼성전자주식회사 | 캐리어 기판의 디본딩 방법, 이를 수행하기 위한 장치 및 이를 포함하는 반도체 칩의 싱귤레이팅 방법 |
JP6957108B2 (ja) * | 2017-12-07 | 2021-11-02 | 株式会社ディスコ | 加工装置 |
CN112447560B (zh) * | 2020-11-30 | 2022-11-01 | 青岛歌尔微电子研究院有限公司 | 一种切割辅助装置、芯片封装结构的切割方法、以及电子器件 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS50110274A (ja) * | 1974-02-06 | 1975-08-30 | ||
JPH08124881A (ja) * | 1994-10-28 | 1996-05-17 | Nec Corp | ダイシングテープ及びそれを用いた半導体装置の組立方 法 |
JP2000031098A (ja) * | 1998-07-15 | 2000-01-28 | Disco Abrasive Syst Ltd | 被加工物保持テーブル |
JP2000208445A (ja) | 1999-01-18 | 2000-07-28 | Disco Abrasive Syst Ltd | 被加工物の分割加工方法 |
JP2000232080A (ja) | 1999-02-10 | 2000-08-22 | Disco Abrasive Syst Ltd | 被加工物の分割システム及びペレットの移し替え装置 |
JP2004281526A (ja) * | 2003-03-13 | 2004-10-07 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法 |
US7135385B1 (en) * | 2004-04-23 | 2006-11-14 | National Semiconductor Corporation | Semiconductor devices having a back surface protective coating |
JP2007048876A (ja) * | 2005-08-09 | 2007-02-22 | Renesas Technology Corp | 半導体装置の製造方法 |
JP4624931B2 (ja) * | 2006-01-19 | 2011-02-02 | キヤノンマシナリー株式会社 | ピックアップ装置及びピックアップ方法 |
JP5448334B2 (ja) * | 2007-12-11 | 2014-03-19 | 株式会社ディスコ | パッケージ基板の保持治具 |
JP2009184002A (ja) * | 2008-02-08 | 2009-08-20 | Disco Abrasive Syst Ltd | レーザ加工方法 |
JP2010062375A (ja) * | 2008-09-04 | 2010-03-18 | Disco Abrasive Syst Ltd | ウエーハの加工方法 |
JP5660909B2 (ja) * | 2011-01-27 | 2015-01-28 | 株式会社ディスコ | 環状凸部除去装置及び環状凸部除去方法 |
WO2012161069A1 (ja) * | 2011-05-20 | 2012-11-29 | オリンパス株式会社 | 基板シートの製造方法 |
JP5993729B2 (ja) * | 2012-11-30 | 2016-09-14 | 株式会社ディスコ | パッケージ基板の分割方法 |
-
2014
- 2014-11-26 JP JP2014239165A patent/JP6351490B2/ja active Active
-
2015
- 2015-10-14 TW TW104133718A patent/TWI641033B/zh active
- 2015-11-06 MY MYPI2015704033A patent/MY175661A/en unknown
- 2015-11-11 US US14/938,491 patent/US9431299B2/en active Active
- 2015-11-23 CN CN201510817986.6A patent/CN105633017B/zh active Active
Also Published As
Publication number | Publication date |
---|---|
US20160148843A1 (en) | 2016-05-26 |
MY175661A (en) | 2020-07-03 |
TWI641033B (zh) | 2018-11-11 |
US9431299B2 (en) | 2016-08-30 |
CN105633017A (zh) | 2016-06-01 |
CN105633017B (zh) | 2020-07-03 |
TW201624552A (zh) | 2016-07-01 |
JP2016100586A (ja) | 2016-05-30 |
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