JP6307154B2 - 露出センサアレイを伴うセンサパッケージ及びその製造方法 - Google Patents
露出センサアレイを伴うセンサパッケージ及びその製造方法 Download PDFInfo
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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Description
10:ウェハ
12:画像センサ
14:光検出器
16:サポート回路
17:活性エリア
18:接触パッド
20:マイクロレンズ
22:保護基板
24:開口
26:スペーサ材料層
28:保護テープ
30:ハーメチックシール空洞
34:ホスト基板アッセンブリ
36:ホスト基板
38:VIA開口
40:誘電体材料層
42:導電性材料
44:ホトレジスト
46:相互接続部
50:ボンディングワイヤ
52:オーバーモールド材料
60:レンズモジュール
62:ハウジング
70:化学的センサ
72:化学的検出器
74:ホトレジスト
76:溝
78:不動態化層
80、84:ホトレジスト
82:導電性材料
86:カプセル層
88:リルート接触部
90:相互接続部
92:フレックスPCB
94:オーバーモールド材料
Claims (4)
- 対向する第1面及び第2面、並びにその第1面と第2面との間に各々延びる複数の導電性素子を有する第1基板;
対向する前面及び後面、その前面上又は内に形成された複数の検出器、及び前面に形成されて複数の検出器に電気的に結合された複数の接触パッドを含む第2基板;
前記前面にマウントされる第3基板であって、前記第3基板上に直接配置されたスペーサ材料及び、前記スペーサ材料と前記前面との間に配置されたエポキシ結合材によって前記第3基板は前面にマウントされて、該第3基板と前記前面との間に空洞を画成しており、前記空洞から第3基板を貫通して延びる第1開口を含み、該第1開口の幅が、該複数の検出器を全く覆わないように、広がっている、前記第3基板;
と、を備え、前記後面は、前記第1面にマウントされるものであり、更に、
前記接触パッドの1つと前記導電性素子の1つとの間に各々延びて、それらを電気的に接続する複数のワイヤ;
を備え、
前記ワイヤ、前記導電性素子に隣接する前記第1基板の第1面の1つ以上の部分、及び前記複数の接触パッドに隣接する前記第2基板の前面の1つ以上の部分をカプセル化するオーバーモールド材料、
前記オーバーモールド材料にマウントされたレンズモジュールを更に備え、このレンズモジュールは、ハウジングと、前記第1開口を通して前記複数の検出器に光を収束するように配置された1つ以上のレンズ、とを備えている
パッケージ型センサアッセンブリ。 - 前記第1基板は、導電性シリコン材料で作られ、そして前記アッセンブリは、前記導電性素子と前記第1基板との間に配置された絶縁材料を更に備えている、請求項1に記載のパッケージ型センサアッセンブリ。
- 対向する第1面及び第2面を含む第1基板を準備し;
第1面と第2面との間に各々延びる複数の導電性素子を形成し;
対向する前面及び後面と、その前面上又は内に形成された複数の検出器と、前面に形成されて、前記複数の検出器に電気的結合された複数の接触パッドとを含む第2基板を準備し;
第3基板を貫通する第1開口を形成し、
該第3期板上に直接スペーサ材料を形成し、
その第3基板と前記前面との間に空洞を画成するように、前記第3基板を、前記スペーサ材料と前記前面との間に直接配置されたエポキシ結合剤とともに前記前面にマウントし、第1開口は該第3基板を通して空洞から延びており、かつ前記第1開口の幅が、前記複数の検出器を全く覆わないように、広がっており;
前記第3基板に前記第1開口を覆うようにして保護テープを貼り付け;
前記後面を前記第1面にマウントし;
前記接触パッドの1つと前記導電性素子の1つとの間に延びて、それらを電気的に接続する複数のワイヤを準備し;及び
前記第1基板に前記後面をマウントした後、かつ前記複数のワイヤを準備した後に、前記保護テープを除去し;
前記ワイヤ、前記導電性素子に隣接する前記第1基板の第1面の1つ以上の部分、及び前記複数の接触パッドに隣接する前記第2基板の前面の1つ以上の部分をオーバーモールド材料でカプセル化し、
前記オーバーモールド材料にレンズモジュールをマウントすることを更に含み、該レズモジュールは、ハウジングと、前記第1開口を通して前記複数の検出器に光を収束するように配置された1つ以上のレンズとを備えている、
ことを含むパッケージ型センサアッセンブリの製造方法。 - 前記第1基板は、導電性シリコン材料で作られ、そして前記方法は、前記導電性素子と前記第1基板との間に配置される絶縁材料を形成することを更に含む、請求項3に記載の方法。
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JP2016524329A (ja) | 2016-08-12 |
TWI573253B (zh) | 2017-03-01 |
US9570634B2 (en) | 2017-02-14 |
WO2014197370A3 (en) | 2015-03-12 |
KR101817412B1 (ko) | 2018-01-11 |
CN105247678A (zh) | 2016-01-13 |
US9142695B2 (en) | 2015-09-22 |
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R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
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R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |