JP6304017B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP6304017B2
JP6304017B2 JP2014256614A JP2014256614A JP6304017B2 JP 6304017 B2 JP6304017 B2 JP 6304017B2 JP 2014256614 A JP2014256614 A JP 2014256614A JP 2014256614 A JP2014256614 A JP 2014256614A JP 6304017 B2 JP6304017 B2 JP 6304017B2
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JP
Japan
Prior art keywords
external terminal
switching elements
module
semiconductor device
switching element
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JP2014256614A
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English (en)
Japanese (ja)
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JP2016119739A (ja
JP2016119739A5 (enExample
Inventor
晶子 後藤
晶子 後藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2014256614A priority Critical patent/JP6304017B2/ja
Priority to US14/844,861 priority patent/US9577627B2/en
Priority to DE102015225391.0A priority patent/DE102015225391A1/de
Priority to CN201510957520.6A priority patent/CN105720834A/zh
Publication of JP2016119739A publication Critical patent/JP2016119739A/ja
Priority to US15/397,909 priority patent/US20170117820A1/en
Publication of JP2016119739A5 publication Critical patent/JP2016119739A5/ja
Application granted granted Critical
Publication of JP6304017B2 publication Critical patent/JP6304017B2/ja
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    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of AC power input into DC power output; Conversion of DC power input into AC power output
    • H02M7/003—Constructional details, e.g. physical layout, assembly, wiring or busbar connections
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of AC power input into DC power output; Conversion of DC power input into AC power output
    • H02M7/42—Conversion of DC power input into AC power output without possibility of reversal
    • H02M7/44—Conversion of DC power input into AC power output without possibility of reversal by static converters
    • H02M7/48—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M7/483—Converters with outputs that each can have more than two voltages levels
    • H02M7/487—Neutral point clamped inverters
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
    • H02M1/088—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/10—Modifications for increasing the maximum permissible switched voltage
    • H03K17/107—Modifications for increasing the maximum permissible switched voltage in composite switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/6871—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
    • H03K17/6874—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor in a symmetrical configuration
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/74—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of diodes
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03M—CODING; DECODING; CODE CONVERSION IN GENERAL
    • H03M5/00—Conversion of the form of the representation of individual digits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03M—CODING; DECODING; CODE CONVERSION IN GENERAL
    • H03M7/00—Conversion of a code where information is represented by a given sequence or number of digits to a code where the same, similar or subset of information is represented by a different sequence or number of digits
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/0003—Details of control, feedback or regulation circuits
    • H02M1/0009—Devices or circuits for detecting current in a converter
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/0048—Circuits or arrangements for reducing losses
    • H02M1/0054—Transistor switching losses
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
    • Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Theoretical Computer Science (AREA)
  • Inverter Devices (AREA)
  • Power Conversion In General (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
JP2014256614A 2014-12-18 2014-12-18 半導体装置 Active JP6304017B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2014256614A JP6304017B2 (ja) 2014-12-18 2014-12-18 半導体装置
US14/844,861 US9577627B2 (en) 2014-12-18 2015-09-03 Semiconductor device
DE102015225391.0A DE102015225391A1 (de) 2014-12-18 2015-12-16 Halbleitervorrichtung
CN201510957520.6A CN105720834A (zh) 2014-12-18 2015-12-18 半导体装置
US15/397,909 US20170117820A1 (en) 2014-12-18 2017-01-04 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014256614A JP6304017B2 (ja) 2014-12-18 2014-12-18 半導体装置

Publications (3)

Publication Number Publication Date
JP2016119739A JP2016119739A (ja) 2016-06-30
JP2016119739A5 JP2016119739A5 (enExample) 2017-01-05
JP6304017B2 true JP6304017B2 (ja) 2018-04-04

Family

ID=56099624

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014256614A Active JP6304017B2 (ja) 2014-12-18 2014-12-18 半導体装置

Country Status (4)

Country Link
US (2) US9577627B2 (enExample)
JP (1) JP6304017B2 (enExample)
CN (1) CN105720834A (enExample)
DE (1) DE102015225391A1 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6304017B2 (ja) * 2014-12-18 2018-04-04 三菱電機株式会社 半導体装置
KR101983591B1 (ko) * 2017-03-09 2019-05-29 한경대학교 산학협력단 레벨 전환을 이용한 3레벨 t타입 인버터 동작 방법
EP3396839B1 (en) * 2017-04-28 2021-12-15 Infineon Technologies AG Semiconductor arrangement with controllable semiconductor elements
US10581313B2 (en) * 2018-02-28 2020-03-03 Eaton Intelligent Power Limited Hybrid I-T type multi-level converters
JP7683440B2 (ja) * 2021-09-17 2025-05-27 三菱電機株式会社 双方向スイッチ回路および電力変換装置
EP4425780A1 (en) * 2023-03-03 2024-09-04 Infineon Technologies AG Semiconductor arrangement and semiconductor module arrangement

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3263317B2 (ja) * 1996-06-18 2002-03-04 株式会社東芝 スイッチングモジュールおよびモジュールを用いた電力変換器
JP2002247862A (ja) * 2001-02-20 2002-08-30 Hitachi Ltd 電力変換装置
JP4471967B2 (ja) * 2006-12-28 2010-06-02 株式会社ルネサステクノロジ 双方向スイッチモジュール
JP2008193779A (ja) * 2007-02-02 2008-08-21 Fuji Electric Systems Co Ltd 半導体モジュール
JP5457449B2 (ja) * 2009-06-19 2014-04-02 三菱電機株式会社 電力変換装置
JP5533068B2 (ja) * 2010-03-15 2014-06-25 富士電機株式会社 半導体装置
JP5494147B2 (ja) * 2010-04-06 2014-05-14 富士電機株式会社 パワー半導体モジュール及びそれを用いた電力変換装置
JP2011234544A (ja) 2010-04-28 2011-11-17 Fuji Electric Co Ltd パワー半導体モジュール及びそれを用いた電力変換装置
JP5556703B2 (ja) * 2011-03-07 2014-07-23 富士電機株式会社 電力変換装置
EP2525491B1 (en) * 2011-05-16 2021-03-10 Vincotech GmbH Switching loss reduction in converter modules
JP5644943B2 (ja) * 2011-06-10 2014-12-24 富士電機株式会社 半導体モジュール、上下アームキットおよび３レベルインバータ
JP5644944B2 (ja) * 2011-07-05 2014-12-24 富士電機株式会社 マルチレベル変換回路
JP5929277B2 (ja) * 2011-08-18 2016-06-01 富士電機株式会社 ３レベル電力変換装置
CN103250345B (zh) * 2011-09-05 2016-02-10 株式会社创发系统研究所 通过长电缆进行驱动的公路隧道射流风机用感应电动机的可变速驱动装置
JP2013223274A (ja) * 2012-04-13 2013-10-28 Fuji Electric Co Ltd マルチレベル電力変換装置
EP2919377B1 (en) * 2012-11-09 2018-10-31 Fuji Electric Co., Ltd. Inverter device
JP6163768B2 (ja) 2013-01-29 2017-07-19 株式会社明電舎 マルチレベル電力変換装置のゲート駆動信号生成装置
DE102013104081B3 (de) * 2013-04-23 2014-05-15 Semikron Elektronik Gmbh & Co. Kg 3-Level-Stromrichterhalbbrücke
CN105379098B (zh) * 2013-10-02 2018-09-21 富士电机株式会社 三电平逆变器
JP6304017B2 (ja) * 2014-12-18 2018-04-04 三菱電機株式会社 半導体装置

Also Published As

Publication number Publication date
US20160182032A1 (en) 2016-06-23
DE102015225391A1 (de) 2016-06-23
JP2016119739A (ja) 2016-06-30
US20170117820A1 (en) 2017-04-27
US9577627B2 (en) 2017-02-21
CN105720834A (zh) 2016-06-29

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