JP6300751B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP6300751B2
JP6300751B2 JP2015062241A JP2015062241A JP6300751B2 JP 6300751 B2 JP6300751 B2 JP 6300751B2 JP 2015062241 A JP2015062241 A JP 2015062241A JP 2015062241 A JP2015062241 A JP 2015062241A JP 6300751 B2 JP6300751 B2 JP 6300751B2
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JP
Japan
Prior art keywords
electrode lead
semiconductor device
resin case
parallel
lead portions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2015062241A
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English (en)
Japanese (ja)
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JP2016181649A5 (enExample
JP2016181649A (ja
Inventor
塚本　英樹
英樹 塚本
田畑　光晴
光晴 田畑
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2015062241A priority Critical patent/JP6300751B2/ja
Priority to US14/926,805 priority patent/US9627284B2/en
Priority to DE102015222826.6A priority patent/DE102015222826B4/de
Priority to CN201610177520.9A priority patent/CN106024748B/zh
Publication of JP2016181649A publication Critical patent/JP2016181649A/ja
Publication of JP2016181649A5 publication Critical patent/JP2016181649A5/ja
Application granted granted Critical
Publication of JP6300751B2 publication Critical patent/JP6300751B2/ja
Active legal-status Critical Current
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • H01L23/053—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body
    • H01L23/055—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body the leads having a passage through the base
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/492—Bases or plates or solder therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/552—Protection against radiation, e.g. light or electromagnetic waves
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64—Impedance arrangements
    • H01L23/645—Inductive arrangements

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Electromagnetism (AREA)
  • Toxicology (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Coils Or Transformers For Communication (AREA)
JP2015062241A 2015-03-25 2015-03-25 半導体装置 Active JP6300751B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2015062241A JP6300751B2 (ja) 2015-03-25 2015-03-25 半導体装置
US14/926,805 US9627284B2 (en) 2015-03-25 2015-10-29 Semiconductor device
DE102015222826.6A DE102015222826B4 (de) 2015-03-25 2015-11-19 Halbleitervorrichtung
CN201610177520.9A CN106024748B (zh) 2015-03-25 2016-03-25 半导体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2015062241A JP6300751B2 (ja) 2015-03-25 2015-03-25 半導体装置

Publications (3)

Publication Number Publication Date
JP2016181649A JP2016181649A (ja) 2016-10-13
JP2016181649A5 JP2016181649A5 (enExample) 2017-06-29
JP6300751B2 true JP6300751B2 (ja) 2018-03-28

Family

ID=56890275

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2015062241A Active JP6300751B2 (ja) 2015-03-25 2015-03-25 半導体装置

Country Status (4)

Country Link
US (1) US9627284B2 (enExample)
JP (1) JP6300751B2 (enExample)
CN (1) CN106024748B (enExample)
DE (1) DE102015222826B4 (enExample)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6399962B2 (ja) * 2015-04-16 2018-10-03 三菱電機株式会社 半導体装置
USD814431S1 (en) * 2015-05-15 2018-04-03 Mitsubishi Electric Corporation Power semiconductor device
USD864132S1 (en) 2017-01-05 2019-10-22 Rohm Co., Ltd. Power semiconductor module
JP1585831S (enExample) 2017-01-05 2017-09-11
JP1603980S (enExample) * 2017-09-07 2018-05-14
JP1603793S (enExample) * 2017-09-29 2018-05-14
JP1632173S (enExample) * 2018-06-01 2019-05-27
JP1659716S (enExample) 2019-08-29 2020-05-18
JP1659674S (enExample) 2019-08-29 2020-05-18
JP1659676S (enExample) 2019-08-29 2020-05-18
JP1659678S (enExample) 2019-08-29 2020-05-18
JP1659675S (enExample) 2019-08-29 2020-05-18
JP1659672S (enExample) * 2019-08-29 2020-05-18
JP1659673S (enExample) 2019-08-29 2020-05-18
JP1659677S (enExample) 2019-08-29 2020-05-18
USD916039S1 (en) * 2020-03-20 2021-04-13 Sansha Electric Manufacturing Co., Ltd. Semiconductor device
DE102020124149A1 (de) 2020-09-16 2022-03-17 Danfoss Silicon Power Gmbh Leistungsmodul

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5523620A (en) * 1994-02-14 1996-06-04 Delco Electronics Corporation Coplanar linear dual switch module
JPH0783087B2 (ja) 1994-04-19 1995-09-06 富士電機株式会社 半導体装置
JP3997730B2 (ja) * 2001-06-20 2007-10-24 株式会社日立製作所 電力変換装置及びそれを備えた移動体
JP4081611B2 (ja) 2003-11-19 2008-04-30 株式会社豊田自動織機 半導体装置
JP4566678B2 (ja) * 2004-10-04 2010-10-20 日立オートモティブシステムズ株式会社 パワーモジュール
JP4660214B2 (ja) * 2005-01-26 2011-03-30 日本インター株式会社 電力用半導体装置
JP4603956B2 (ja) * 2005-08-26 2010-12-22 日立オートモティブシステムズ株式会社 電力変換装置
JP4410241B2 (ja) * 2006-12-27 2010-02-03 三菱電機株式会社 電子制御装置
JP4865829B2 (ja) * 2009-03-31 2012-02-01 シャープ株式会社 半導体装置およびその製造方法
US9147666B2 (en) 2009-05-14 2015-09-29 Rohm Co., Ltd. Semiconductor device
CN102484109B (zh) * 2009-08-03 2014-12-10 株式会社安川电机 电力变换装置
CN102576706B (zh) * 2010-03-16 2015-07-22 富士电机株式会社 半导体器件
JP5555206B2 (ja) 2011-07-11 2014-07-23 株式会社 日立パワーデバイス 半導体パワーモジュール
JP5994785B2 (ja) * 2011-09-28 2016-09-21 富士電機株式会社 半導体装置
JP5919511B2 (ja) * 2012-05-16 2016-05-18 パナソニックＩｐマネジメント株式会社 電力用半導体モジュール
JP2014086506A (ja) * 2012-10-22 2014-05-12 Toyota Motor Corp 半導体装置

Also Published As

Publication number Publication date
DE102015222826B4 (de) 2021-08-12
CN106024748A (zh) 2016-10-12
US9627284B2 (en) 2017-04-18
CN106024748B (zh) 2018-11-23
DE102015222826A1 (de) 2016-09-29
JP2016181649A (ja) 2016-10-13
US20160284618A1 (en) 2016-09-29

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