JP5994785B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP5994785B2 JP5994785B2 JP2013536111A JP2013536111A JP5994785B2 JP 5994785 B2 JP5994785 B2 JP 5994785B2 JP 2013536111 A JP2013536111 A JP 2013536111A JP 2013536111 A JP2013536111 A JP 2013536111A JP 5994785 B2 JP5994785 B2 JP 5994785B2
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- 229910052751 metal Inorganic materials 0.000 description 23
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- 229910052782 aluminium Inorganic materials 0.000 description 3
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- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 230000006835 compression Effects 0.000 description 2
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
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- 230000015572 biosynthetic process Effects 0.000 description 1
- 210000000078 claw Anatomy 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
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Description
図1は、実施の形態にかかるモジュール型半導体装置について示す平面図である。また、図2は、図1の切断線A−A’における断面図である。図3は、図1の切断線B−B’における断面図である。図1〜3に示すように、実施の形態にかかる半導体装置10は、半導体チップ1と、配線基板2と、ワイヤ配線3と、主端子4と、制御端子5と、金属ベース6と、樹脂ケース20と、を備えている。樹脂ケース20は、蓋21と側壁22とが一体成形されてなる。
2 配線基板
3 ワイヤ配線
4 主端子
5 制御端子
6 金属ベース
5a 制御端子の貫通部
5b 制御端子の連結部
5c 制御端子の接続部
5d 制御端子の阻止部
5e 制御端子の切り抜き部
10 半導体装置
20 樹脂ケース
21 樹脂ケースの蓋
22 樹脂ケースの側壁
21a 樹脂ケースの貫通孔
21b 樹脂ケースの段差
21c 樹脂ケースの凸部
w1 貫通孔の長手方向の幅
w11 貫通部の幅
w12 阻止部の幅
h 阻止部の高さ
Claims (2)
- 半導体チップが接合された絶縁基板と、
前記絶縁基板の前記半導体チップが接合された面を覆うケースと、
一方の端部が前記半導体チップに電気的に接続され、他方の端部が前記ケースを貫通して前記ケースの外側に露出する制御端子と、を備え、
前記制御端子は、
前記ケースの外側に一方の端部が露出された貫通部と、
前記貫通部の、前記ケースの外側に露出された部分の一部が切り抜かれてなる切り抜き部と、
前記切り抜き部に囲まれ前記貫通部に残る部分を折り曲げることで成形され、前記ケースの外側から前記ケースに接触して前記制御端子の移動を阻止する阻止部と、
前記貫通部の他方の端部に一方の端部が連結して前記貫通部と直交し、前記貫通部に対し前記阻止部と反対方向へ張り出し、かつ前記絶縁基板に平行な平坦面を有する連結部と、
前記連結部の他方の端部に一方の端部が連結して前記連結部と直交し、他方の端部が前記絶縁基板に接合された接続部と、を有し、
前記ケースは、
前記絶縁基板の前記半導体チップが接合された面の上方に配置される蓋と、
前記蓋に設けられ、前記制御端子が貫通する貫通孔と、
前記貫通孔の側部に前記蓋の前記ケースの外側に露出する面側から設けられ、前記阻止部が接触する段差と、
前記蓋の、前記絶縁基板側の面に設けられ、前記貫通孔に対し前記段差と反対側に配置され、かつ前記連結部の平坦面に接触する凸部と、を有し、
異なる前記貫通孔を貫通し隣り合って配置され、前記連結部の張り出し方向を同じ方向に向けた2つの前記制御端子を1組とし、
前記1組の前記制御端子のうち、一方の前記制御端子の前記阻止部が接触する前記段差と、他方の前記制御端子の前記連結部が接触する前記凸部と、が前記蓋の厚さ方向に対向することを特徴とする半導体装置。 - 前記貫通孔の幅は、前記貫通部の厚さに対応することを特徴とする請求項1に記載の半
導体装置。
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CN104160504B (zh) | 2012-03-28 | 2017-05-17 | 富士电机株式会社 | 半导体装置和半导体装置的制造方法 |
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