JPWO2017122471A1 - 半導体装置 - Google Patents
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 35
- 239000004020 conductor Substances 0.000 claims abstract description 7
- 238000003780 insertion Methods 0.000 description 22
- 230000037431 insertion Effects 0.000 description 22
- 239000000758 substrate Substances 0.000 description 14
- 239000011347 resin Substances 0.000 description 7
- 229920005989 resin Polymers 0.000 description 7
- 239000002184 metal Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 3
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
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- 230000005484 gravity Effects 0.000 description 1
- 238000007373 indentation Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
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Abstract
Description
特許文献1 国際公開第2012/66833号パンフレット
図5は、第1実施例に係る制御端子40を示す斜視図である。図5では、並行して設けられた第1の制御端子40−1および第2の制御端子40−2を示している。2つの制御端子40は、蓋部24に固定され、それぞれ対応するパッド21と接触する。
図6は、第2実施例に係る制御端子40を示す斜視図である。本例の制御端子40においては、隣接する2つの制御端子40における接触部42の距離D2は、固定部43の距離D1よりも大きい。距離D1およびD2は、それぞれの部材の最短距離を指す。このような構造により、XY面内での移動量が比較的に大きくなりやすい接触部42どうしが、接触してしまうことを抑制できる。
図8は、第3実施例に係る制御端子40を示す上面図である。本例では、それぞれの板状部41において、内側端部47に設けられた凹部46の量が、外側端部48に設けられた凹部46の量よりも多い。ここで、凹部の量とは、上面図における凹部の総面積を指す。
図9は、第4実施例に係る制御端子40を示す上面図である。本例では、それぞれの板状部41において、固定部43側の領域は、接触部42側の領域よりも凹部46の密度が高い。ここで、凹部46の密度とは、板状部41の単位長さ当たりの凹部46の量を指す。
図10は、第5実施例に係る制御端子40を示す上面図である。本例では、第2の制御端子40−2における板状部41には、第1の制御端子40−1における板状部41よりも広い範囲に凹部46が設けられている。つまり、第2の制御端子40−2において凹部46が設けられている領域のX方向における長さの絶対値が、第1の制御端子40−1において凹部46が設けられている領域のX方向における長さの絶対値が大きい。このような構成により、第2の制御部40−2の接触部42のY方向における可動範囲を、第1の制御部40−1の接触部42のY方向における可動範囲よりも広くすることができる。
図11は、第6実施例に係る制御端子40を示す斜視図である。本例では、固定部43の主面の法線方向(すなわちX方向)は、板状部41の延伸方向と平行である。本例では、板状部41と同一の幅の固定部43が、板状部41の端部においてZ方向に折れ曲がるように設けられている。
Claims (10)
- 導電材料で形成されたパッドを有する底部と、
前記底部の少なくとも一部を覆う蓋部と、
前記蓋部に固定され、それぞれ対応する前記パッドと接触する、並行して設けられた第1端子部及び第2端子部と
を備え、
第1端子部には第1板状部が設けられており、第2端子部には第2板状部が設けられており、
前記第1板状部及び第2板状部はそれぞれ、前記パッドと対向する方向に主面を有し、且つ、前記パッドに向かう方向に弾性を有する
半導体装置。 - 前記第1板状部及び第2板状部は、互いに平行に設けられる
請求項1に記載の半導体装置。 - 前記第1板状部及び第2板状部の主面にはそれぞれ、端部から内側に向かう凹部が設けられている
請求項2に記載の半導体装置。 - 前記第1板状部は、隣接する前記第2板状部と対向する第1内側端部と、前記第1内側端部とは逆側の第1外側端部とを有し、
前記第2板状部は、隣接する前記第1板状部と対向する第2内側端部と、前記第2内側端部とは逆側の第2外側端部とを有し、
前記第1板状部において、前記第1内側端部に設けられた前記凹部の量が、前記第1外側端部に設けられた前記凹部の量よりも多く、
前記第2板状部において、前記第2内側端部に設けられた前記凹部の量が、前記第2外側端部に設けられた前記凹部の量よりも多い
請求項3に記載の半導体装置。 - 前記第1端子部は、
前記第1板状部の一端から延伸して設けられ、前記蓋部に固定される第1固定部と、
前記第1板状部の他端から延伸して設けられ、前記パッドと接触する第1接触部と
を有し、
前記第2端子部は、
前記第2板状部の一端から延伸して設けられ、前記蓋部に固定される第2固定部と、
前記第2板状部の他端から延伸して設けられ、前記パッドと接触する第2接触部と
を有する請求項3に記載の半導体装置。 - 前記第1接触部と前記第2接触部の間の距離は、前記第1固定部と前記第2固定部の間の距離よりも大きい
請求項5に記載の半導体装置。 - 前記第1板状部において、前記第1固定部側の領域は、前記第1接触部側の領域よりも前記凹部の密度が高く、
前記第2板状部において、前記第2固定部側の領域は、前記第2接触部側の領域よりも前記凹部の密度が高い
請求項5に記載の半導体装置。 - 前記第1固定部及び第2固定部は板形状である
請求項5に記載の半導体装置。 - 前記第1固定部の主面の法線方向は、前記第1板状部の延伸方向と平行であり、
前記第2固定部の主面の法線方向は、前記第2板状部の延伸方向と平行である
請求項8に記載の半導体装置。 - 前記第2板状部には、前記第1板状部よりも広い範囲に前記凹部が形成されている
請求項3から9のいずれか一項に記載の半導体装置。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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JP2016006451 | 2016-01-15 | ||
JP2016006451 | 2016-01-15 | ||
PCT/JP2016/086610 WO2017122471A1 (ja) | 2016-01-15 | 2016-12-08 | 半導体装置 |
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JPWO2017122471A1 true JPWO2017122471A1 (ja) | 2018-04-19 |
JP6350765B2 JP6350765B2 (ja) | 2018-07-04 |
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JP (1) | JP6350765B2 (ja) |
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JP7106981B2 (ja) * | 2018-05-18 | 2022-07-27 | 富士電機株式会社 | 逆導通型半導体装置 |
JP6437700B1 (ja) * | 2018-05-29 | 2018-12-12 | 新電元工業株式会社 | 半導体モジュール |
JP6921794B2 (ja) * | 2018-09-14 | 2021-08-18 | 株式会社東芝 | 半導体装置 |
JP7244339B2 (ja) * | 2019-04-19 | 2023-03-22 | 株式会社三社電機製作所 | 半導体モジュール用外部端子 |
JP1669329S (ja) * | 2020-03-13 | 2020-10-05 | ||
USD949808S1 (en) * | 2020-11-27 | 2022-04-26 | Sansha Electric Manufacturing Co., Ltd. | Semiconductor device |
Citations (4)
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JP2000208686A (ja) * | 1999-01-11 | 2000-07-28 | Fuji Electric Co Ltd | パワ―モジュ―ルのパッケ―ジ構造 |
JP2008098585A (ja) * | 2006-10-16 | 2008-04-24 | Fuji Electric Device Technology Co Ltd | 半導体装置及び半導体装置の製造方法 |
WO2012066833A1 (ja) * | 2010-11-16 | 2012-05-24 | 富士電機株式会社 | 半導体装置 |
US20140118956A1 (en) * | 2012-10-31 | 2014-05-01 | Samsung Electro-Mechanics Co., Ltd. | All-in-one power semiconductor module |
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JP2560909Y2 (ja) | 1991-08-05 | 1998-01-26 | 日本インター株式会社 | 複合半導体装置 |
WO2000055917A1 (de) | 1999-03-17 | 2000-09-21 | eupec Europäische Gesellschaft für Leistungshalbleiter mbH & Co. KG | Leistungshalbleitermodul |
JP4329961B2 (ja) | 1999-11-15 | 2009-09-09 | 日本インター株式会社 | 複合半導体装置 |
JP4900165B2 (ja) * | 2007-09-27 | 2012-03-21 | 三菱電機株式会社 | 電力半導体モジュール |
WO2011115081A1 (ja) * | 2010-03-16 | 2011-09-22 | 富士電機システムズ株式会社 | 半導体装置 |
WO2013047101A1 (ja) * | 2011-09-28 | 2013-04-04 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
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Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2000208686A (ja) * | 1999-01-11 | 2000-07-28 | Fuji Electric Co Ltd | パワ―モジュ―ルのパッケ―ジ構造 |
JP2008098585A (ja) * | 2006-10-16 | 2008-04-24 | Fuji Electric Device Technology Co Ltd | 半導体装置及び半導体装置の製造方法 |
WO2012066833A1 (ja) * | 2010-11-16 | 2012-05-24 | 富士電機株式会社 | 半導体装置 |
US20140118956A1 (en) * | 2012-10-31 | 2014-05-01 | Samsung Electro-Mechanics Co., Ltd. | All-in-one power semiconductor module |
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CN107851630A (zh) | 2018-03-27 |
US10297533B2 (en) | 2019-05-21 |
CN107851630B (zh) | 2020-08-04 |
US20180122723A1 (en) | 2018-05-03 |
JP6350765B2 (ja) | 2018-07-04 |
WO2017122471A1 (ja) | 2017-07-20 |
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