JP6291446B2 - 導電性炭化珪素質焼結体の製造方法 - Google Patents
導電性炭化珪素質焼結体の製造方法 Download PDFInfo
- Publication number
- JP6291446B2 JP6291446B2 JP2015064930A JP2015064930A JP6291446B2 JP 6291446 B2 JP6291446 B2 JP 6291446B2 JP 2015064930 A JP2015064930 A JP 2015064930A JP 2015064930 A JP2015064930 A JP 2015064930A JP 6291446 B2 JP6291446 B2 JP 6291446B2
- Authority
- JP
- Japan
- Prior art keywords
- silicon carbide
- phase
- sintered body
- conductive
- type silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 229910010271 silicon carbide Inorganic materials 0.000 title claims description 234
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims description 221
- 238000004519 manufacturing process Methods 0.000 title claims description 26
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 118
- 229910052757 nitrogen Inorganic materials 0.000 claims description 47
- 238000010304 firing Methods 0.000 claims description 45
- 238000007254 oxidation reaction Methods 0.000 claims description 42
- 230000003647 oxidation Effects 0.000 claims description 41
- 238000006243 chemical reaction Methods 0.000 claims description 35
- 229910052710 silicon Inorganic materials 0.000 claims description 30
- 239000010703 silicon Substances 0.000 claims description 30
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 29
- 229910001873 dinitrogen Inorganic materials 0.000 claims description 24
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 22
- 230000001590 oxidative effect Effects 0.000 claims description 21
- 229910052799 carbon Inorganic materials 0.000 claims description 18
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 15
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 15
- 239000002994 raw material Substances 0.000 claims description 12
- 239000002019 doping agent Substances 0.000 claims description 11
- 239000000523 sample Substances 0.000 description 23
- 238000000034 method Methods 0.000 description 15
- 239000002245 particle Substances 0.000 description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 12
- 229910021431 alpha silicon carbide Inorganic materials 0.000 description 10
- 239000000919 ceramic Substances 0.000 description 9
- 238000010438 heat treatment Methods 0.000 description 9
- 238000012360 testing method Methods 0.000 description 8
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 235000012239 silicon dioxide Nutrition 0.000 description 6
- 239000000377 silicon dioxide Substances 0.000 description 6
- 239000007789 gas Substances 0.000 description 5
- 238000002441 X-ray diffraction Methods 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000011362 coarse particle Substances 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 229910002804 graphite Inorganic materials 0.000 description 4
- 239000010439 graphite Substances 0.000 description 4
- 238000007561 laser diffraction method Methods 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 3
- 238000003763 carbonization Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 239000001307 helium Substances 0.000 description 3
- 229910052734 helium Inorganic materials 0.000 description 3
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- 238000010298 pulverizing process Methods 0.000 description 3
- 238000003991 Rietveld refinement Methods 0.000 description 2
- 239000003575 carbonaceous material Substances 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 230000007812 deficiency Effects 0.000 description 2
- 239000010419 fine particle Substances 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 238000012935 Averaging Methods 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 239000006229 carbon black Substances 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 239000003610 charcoal Substances 0.000 description 1
- 239000003245 coal Substances 0.000 description 1
- 239000000571 coke Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000003550 marker Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000004570 mortar (masonry) Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 239000000615 nonconductor Substances 0.000 description 1
- 238000013021 overheating Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
Images
Landscapes
- Ceramic Products (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015064930A JP6291446B2 (ja) | 2015-03-26 | 2015-03-26 | 導電性炭化珪素質焼結体の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015064930A JP6291446B2 (ja) | 2015-03-26 | 2015-03-26 | 導電性炭化珪素質焼結体の製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2016183081A JP2016183081A (ja) | 2016-10-20 |
| JP2016183081A5 JP2016183081A5 (enExample) | 2017-02-09 |
| JP6291446B2 true JP6291446B2 (ja) | 2018-03-14 |
Family
ID=57242417
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015064930A Active JP6291446B2 (ja) | 2015-03-26 | 2015-03-26 | 導電性炭化珪素質焼結体の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP6291446B2 (enExample) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6778644B2 (ja) * | 2017-03-29 | 2020-11-04 | 東京窯業株式会社 | 導電性炭化珪素質焼結体の製造方法及び導電性炭化珪素質焼結体 |
| JP7213607B2 (ja) * | 2018-03-28 | 2023-01-27 | 東京窯業株式会社 | 導電性炭化珪素質焼結体の製造方法及び導電性炭化珪素質焼結体 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3476153B2 (ja) * | 1993-08-12 | 2003-12-10 | 東海高熱工業株式会社 | 導電性炭化珪素質セラミック材 |
| JPH0789764A (ja) * | 1993-09-21 | 1995-04-04 | Tokai Konetsu Kogyo Co Ltd | 炭化珪素発熱体 |
| JPH0812462A (ja) * | 1994-06-22 | 1996-01-16 | Denki Kagaku Kogyo Kk | 導電性セラミックとその製造方法及び用途 |
| JPH0826827A (ja) * | 1994-07-15 | 1996-01-30 | Denki Kagaku Kogyo Kk | 導電性反応焼結炭化珪素焼結体とその製造方法及び用途 |
| JP3691536B2 (ja) * | 1995-02-08 | 2005-09-07 | 東京窯業株式会社 | 多孔質導電性炭化珪素焼結体の製造方法 |
| JP3681780B2 (ja) * | 1995-02-08 | 2005-08-10 | 東京窯業株式会社 | 多孔質導電性炭化珪素焼結体とその製造方法及び用途 |
| US6695984B1 (en) * | 1998-08-07 | 2004-02-24 | Bridgestone Corporation | Silicon carbide sinter and process for producing the same |
-
2015
- 2015-03-26 JP JP2015064930A patent/JP6291446B2/ja active Active
Also Published As
| Publication number | Publication date |
|---|---|
| JP2016183081A (ja) | 2016-10-20 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR101757069B1 (ko) | 알루미나 복합체 세라믹스 조성물 및 그의 제조방법 | |
| Anwar et al. | Effect of Ni content and its particle size on electrical resistivity and flexural strength of porous SiC ceramic sintered at low-temperature using clay additive | |
| JP6291446B2 (ja) | 導電性炭化珪素質焼結体の製造方法 | |
| KR101178234B1 (ko) | 이트륨나이트레이트 및 그 화합물 중 적어도 어느 하나를 포함하는 탄화규소 세라믹스 제조용 조성물, 탄화규소 세라믹스 및 그 제조방법 | |
| JP2006069843A (ja) | 半導体製造装置用セラミック部材 | |
| US10703677B2 (en) | SiC sintered body, heater and method for producing SiC sintered body | |
| JP6778644B2 (ja) | 導電性炭化珪素質焼結体の製造方法及び導電性炭化珪素質焼結体 | |
| JP4796716B2 (ja) | 反応焼結炭化珪素発熱体の製造方法 | |
| KR101483016B1 (ko) | 전도성 탄화규소 벌크소재 및 그 조성물 | |
| JPH1179840A (ja) | 炭化ケイ素焼結体 | |
| JP7213607B2 (ja) | 導電性炭化珪素質焼結体の製造方法及び導電性炭化珪素質焼結体 | |
| JP5603765B2 (ja) | 炭化ケイ素発熱体の製造方法および炭化ケイ素発熱体ならびにハニカムの製造方法およびハニカム | |
| JP4809582B2 (ja) | 高熱伝導黒鉛材料及びその製造方法 | |
| JP3611345B2 (ja) | セラミック及びその用途 | |
| JP2012041216A (ja) | 炭化ケイ素焼結体の製造方法及び炭化ケイ素焼結体 | |
| JPH1179847A (ja) | 炭化ケイ素焼結体の製造方法 | |
| JP6387128B2 (ja) | 導電性炭化珪素質焼結体の製造方法及び導電性炭化珪素質焼結体 | |
| JP2012041214A (ja) | 炭化ケイ素焼結体の製造方法及び炭化ケイ素焼結体 | |
| JP2005219937A (ja) | リンを含有する炭化ケイ素焼結体及びその原料となる炭化ケイ素粉体並びにそれらの製造方法 | |
| JP5723429B2 (ja) | 導電性炭化珪素質焼結体 | |
| JP4264236B2 (ja) | 窒化アルミニウム焼結体の製造方法 | |
| JP3277295B2 (ja) | 高温型炭化珪素質発熱体の製造方法 | |
| JP6787207B2 (ja) | ＳｉＣ焼結体 | |
| JP2009126768A (ja) | 炭化ケイ素焼結体の製造方法 | |
| Kavitha et al. | Effect of Nitrogen Dopant on Electrical Resistance of Hot Zone of SiC Heating Elements |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A821 Effective date: 20161228 Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20161228 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20161228 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20171012 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20171121 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A821 Effective date: 20180117 Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20180117 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20180206 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20180209 |
|
| R150 | Certificate of patent or registration of utility model |
Ref document number: 6291446 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |