JP6279598B2 - 銅めっき浴組成物 - Google Patents
銅めっき浴組成物 Download PDFInfo
- Publication number
- JP6279598B2 JP6279598B2 JP2015543389A JP2015543389A JP6279598B2 JP 6279598 B2 JP6279598 B2 JP 6279598B2 JP 2015543389 A JP2015543389 A JP 2015543389A JP 2015543389 A JP2015543389 A JP 2015543389A JP 6279598 B2 JP6279598 B2 JP 6279598B2
- Authority
- JP
- Japan
- Prior art keywords
- aqueous acidic
- electroplating bath
- group
- copper electroplating
- acidic copper
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/38—Electroplating: Baths therefor from solutions of copper
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/56—Electroplating: Baths therefor from solutions of alloys
- C25D3/58—Electroplating: Baths therefor from solutions of alloys containing more than 50% by weight of copper
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/02—Electroplating of selected surface areas
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
- H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electroplating And Plating Baths Therefor (AREA)
- Electroplating Methods And Accessories (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP12194261.9 | 2012-11-26 | ||
| EP12194261.9A EP2735627A1 (en) | 2012-11-26 | 2012-11-26 | Copper plating bath composition |
| PCT/EP2013/073629 WO2014079737A2 (en) | 2012-11-26 | 2013-11-12 | Copper plating bath composition |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2016503461A JP2016503461A (ja) | 2016-02-04 |
| JP2016503461A5 JP2016503461A5 (enExample) | 2016-11-04 |
| JP6279598B2 true JP6279598B2 (ja) | 2018-02-14 |
Family
ID=47226032
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015543389A Active JP6279598B2 (ja) | 2012-11-26 | 2013-11-12 | 銅めっき浴組成物 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US9551080B2 (enExample) |
| EP (2) | EP2735627A1 (enExample) |
| JP (1) | JP6279598B2 (enExample) |
| KR (1) | KR102193485B1 (enExample) |
| CN (1) | CN104854265B (enExample) |
| PH (1) | PH12015501137B1 (enExample) |
| TW (1) | TWI600802B (enExample) |
| WO (1) | WO2014079737A2 (enExample) |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2865787A1 (en) * | 2013-10-22 | 2015-04-29 | ATOTECH Deutschland GmbH | Copper electroplating method |
| ES2639300T3 (es) * | 2014-12-16 | 2017-10-26 | Atotech Deutschland Gmbh | Composiciones de baño de chapado para el chapado no electrolítico de metales y aleaciones metálicas |
| WO2016169952A1 (en) | 2015-04-20 | 2016-10-27 | Atotech Deutschland Gmbh | Electrolytic copper plating bath compositions and a method for their use |
| TWI662161B (zh) * | 2015-08-31 | 2019-06-11 | 德商德國艾托特克公司 | 水性銅電鍍浴及沉積銅或銅合金於基板上之方法 |
| EP3135709B1 (en) | 2015-08-31 | 2018-01-10 | ATOTECH Deutschland GmbH | Imidazoyl urea polymers and their use in metal or metal alloy plating bath compositions |
| ES2681836T3 (es) | 2015-09-10 | 2018-09-17 | Atotech Deutschland Gmbh | Composición de baño para chapado de cobre |
| TWI713737B (zh) | 2016-05-04 | 2020-12-21 | 德商德國艾托特克公司 | 沉積金屬或金屬合金至基板表面及包含基板表面活化之方法 |
| WO2018033461A1 (en) | 2016-08-15 | 2018-02-22 | Atotech Deutschland Gmbh | Acidic aqueous composition for electrolytic copper plating |
| EP3360988B1 (en) | 2017-02-09 | 2019-06-26 | ATOTECH Deutschland GmbH | Pyridinium compounds, a synthesis method therefor, metal or metal alloy plating baths containing said pyridinium compounds and a method for use of said metal or metal alloy plating baths |
| PT3508620T (pt) | 2018-01-09 | 2021-07-12 | Atotech Deutschland Gmbh | Aditivo de ureileno, a sua utilização e um método de preparação para esse fim |
| EP3901331A1 (en) | 2020-04-23 | 2021-10-27 | ATOTECH Deutschland GmbH | Acidic aqueous composition for electrolytically depositing a copper deposit |
| EP3933073B1 (en) * | 2020-06-29 | 2023-11-29 | Atotech Deutschland GmbH & Co. KG | Copper electroplating bath |
| CN112899736A (zh) * | 2021-01-15 | 2021-06-04 | 深圳中科利尔科技有限公司 | 一种pcb高纵横通孔电镀铜添加剂及其制备方法 |
| EP4032930B1 (en) | 2021-01-22 | 2023-08-30 | Atotech Deutschland GmbH & Co. KG | Biuret-based quaternized polymers and their use in metal or metal alloy plating baths |
| EP4063533A1 (en) | 2021-03-25 | 2022-09-28 | Atotech Deutschland GmbH & Co. KG | A process for electrochemical deposition of copper with different current densities |
| KR102339862B1 (ko) * | 2021-07-06 | 2021-12-16 | 와이엠티 주식회사 | 레벨링제 및 이를 포함하는 회로패턴 형성용 전기도금 조성물 |
| KR102339861B1 (ko) * | 2021-07-26 | 2021-12-16 | 와이엠티 주식회사 | 레벨링제 및 이를 포함하는 금속박 형성용 전기도금 조성물 |
| KR102339866B1 (ko) * | 2021-08-04 | 2021-12-16 | 와이엠티 주식회사 | 레벨링제 및 이를 포함하는 유리비아홀 기판 도금을 위한 전기도금 조성물 |
| CN118812171A (zh) * | 2023-04-17 | 2024-10-22 | 财团法人工业技术研究院 | 贯穿玻璃的通孔的铜金属化方法和由此制造的玻璃制品 |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3012168A1 (de) * | 1980-03-27 | 1981-10-01 | Schering Ag Berlin Und Bergkamen, 1000 Berlin | Verfahren zur galvanischen abscheidung von kupferniederschlaegen |
| DE4126502C1 (enExample) * | 1991-08-07 | 1993-02-11 | Schering Ag Berlin Und Bergkamen, 1000 Berlin, De | |
| DE4344387C2 (de) | 1993-12-24 | 1996-09-05 | Atotech Deutschland Gmbh | Verfahren zur elektrolytischen Abscheidung von Kupfer und Anordnung zur Durchführung des Verfahrens |
| DE19545231A1 (de) | 1995-11-21 | 1997-05-22 | Atotech Deutschland Gmbh | Verfahren zur elektrolytischen Abscheidung von Metallschichten |
| US6387229B1 (en) * | 1999-05-07 | 2002-05-14 | Enthone, Inc. | Alloy plating |
| JP2001073182A (ja) * | 1999-07-15 | 2001-03-21 | Boc Group Inc:The | 改良された酸性銅電気メッキ用溶液 |
| US6800188B2 (en) | 2001-05-09 | 2004-10-05 | Ebara-Udylite Co., Ltd. | Copper plating bath and plating method for substrate using the copper plating bath |
| CN1410601A (zh) | 2001-09-27 | 2003-04-16 | 长春石油化学股份有限公司 | 用于铜集成电路内连线的铜电镀液组合物 |
| KR100598994B1 (ko) | 2002-12-25 | 2006-07-07 | 닛코킨조쿠 가부시키가이샤 | 특정골격을 갖는 4급아민화합물 중합체 및 유기유황화합물을 첨가제로서 포함하는 동전해액 및 그것에 의하여 제조되는 전해동박 |
| KR100729061B1 (ko) | 2003-07-29 | 2007-06-14 | 닛코킨조쿠 가부시키가이샤 | 특정골격을 갖는 디알킬아미노기 함유 중합체 및 유기유황화합물을 첨가제로서 포함하는 구리전해액 및 이것에 의해제조되는 전해구리박 |
| EP1598449B1 (en) * | 2004-04-26 | 2010-08-04 | Rohm and Haas Electronic Materials, L.L.C. | Improved plating method |
| DE102005060030A1 (de) * | 2005-12-15 | 2007-06-21 | Coventya Gmbh | Quervernetzte Polymere, diese enthaltende Galvanisierungsbäder sowie deren Verwendung |
| EP2292679B1 (de) | 2009-09-08 | 2020-03-11 | ATOTECH Deutschland GmbH | Polymere mit Aminoendgruppen und deren Verwendung als Additive für galvanische Zink- und Zinklegierungsbäder |
| DE102011008836B4 (de) * | 2010-08-17 | 2013-01-10 | Umicore Galvanotechnik Gmbh | Elektrolyt und Verfahren zur Abscheidung von Kupfer-Zinn-Legierungsschichten |
| EP2518187A1 (en) | 2011-04-26 | 2012-10-31 | Atotech Deutschland GmbH | Aqueous acidic bath for electrolytic deposition of copper |
| EP2865787A1 (en) * | 2013-10-22 | 2015-04-29 | ATOTECH Deutschland GmbH | Copper electroplating method |
-
2012
- 2012-11-26 EP EP12194261.9A patent/EP2735627A1/en not_active Withdrawn
-
2013
- 2013-11-06 TW TW102140324A patent/TWI600802B/zh active
- 2013-11-12 EP EP13792639.0A patent/EP2922985B1/en active Active
- 2013-11-12 CN CN201380061184.6A patent/CN104854265B/zh active Active
- 2013-11-12 US US14/646,739 patent/US9551080B2/en active Active
- 2013-11-12 WO PCT/EP2013/073629 patent/WO2014079737A2/en not_active Ceased
- 2013-11-12 JP JP2015543389A patent/JP6279598B2/ja active Active
- 2013-11-12 KR KR1020157016894A patent/KR102193485B1/ko active Active
-
2015
- 2015-05-21 PH PH12015501137A patent/PH12015501137B1/en unknown
Also Published As
| Publication number | Publication date |
|---|---|
| TWI600802B (zh) | 2017-10-01 |
| CN104854265A (zh) | 2015-08-19 |
| EP2922985A2 (en) | 2015-09-30 |
| US9551080B2 (en) | 2017-01-24 |
| WO2014079737A3 (en) | 2014-09-12 |
| CN104854265B (zh) | 2017-08-08 |
| WO2014079737A2 (en) | 2014-05-30 |
| JP2016503461A (ja) | 2016-02-04 |
| EP2922985B1 (en) | 2016-09-14 |
| US20150299883A1 (en) | 2015-10-22 |
| PH12015501137A1 (en) | 2015-08-03 |
| EP2735627A1 (en) | 2014-05-28 |
| PH12015501137B1 (en) | 2015-08-03 |
| TW201422854A (zh) | 2014-06-16 |
| KR20150088307A (ko) | 2015-07-31 |
| KR102193485B1 (ko) | 2020-12-22 |
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