KR102193485B1 - 구리 도금 욕 조성물 - Google Patents

구리 도금 욕 조성물 Download PDF

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Publication number
KR102193485B1
KR102193485B1 KR1020157016894A KR20157016894A KR102193485B1 KR 102193485 B1 KR102193485 B1 KR 102193485B1 KR 1020157016894 A KR1020157016894 A KR 1020157016894A KR 20157016894 A KR20157016894 A KR 20157016894A KR 102193485 B1 KR102193485 B1 KR 102193485B1
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South Korea
Prior art keywords
aqueous acidic
formula
electroplating bath
copper electroplating
copper
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Korean (ko)
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KR20150088307A (ko
Inventor
하이코 브루너
베른트 뢸프스
아그니에시카 비트착
라르스 콜만
올리비에 만
크리슈티안 오데
티모 방게르터
안젤로 페로
안드레아스 키르브스
안드레 슈뫼켈
디르크 로데
슈테파니 악커만
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아토테크더치랜드게엠베하
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Publication of KR20150088307A publication Critical patent/KR20150088307A/ko
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    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00Electroplating: Baths therefor
    • C25D3/02Electroplating: Baths therefor from solutions
    • C25D3/38Electroplating: Baths therefor from solutions of copper
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00Electroplating: Baths therefor
    • C25D3/02Electroplating: Baths therefor from solutions
    • C25D3/56Electroplating: Baths therefor from solutions of alloys
    • C25D3/58Electroplating: Baths therefor from solutions of alloys containing more than 50% by weight of copper
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/02Electroplating of selected surface areas
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H01L21/2885Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76898Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electroplating And Plating Baths Therefor (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
KR1020157016894A 2012-11-26 2013-11-12 구리 도금 욕 조성물 Active KR102193485B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP12194261.9 2012-11-26
EP12194261.9A EP2735627A1 (en) 2012-11-26 2012-11-26 Copper plating bath composition
PCT/EP2013/073629 WO2014079737A2 (en) 2012-11-26 2013-11-12 Copper plating bath composition

Publications (2)

Publication Number Publication Date
KR20150088307A KR20150088307A (ko) 2015-07-31
KR102193485B1 true KR102193485B1 (ko) 2020-12-22

Family

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KR1020157016894A Active KR102193485B1 (ko) 2012-11-26 2013-11-12 구리 도금 욕 조성물

Country Status (8)

Country Link
US (1) US9551080B2 (enExample)
EP (2) EP2735627A1 (enExample)
JP (1) JP6279598B2 (enExample)
KR (1) KR102193485B1 (enExample)
CN (1) CN104854265B (enExample)
PH (1) PH12015501137B1 (enExample)
TW (1) TWI600802B (enExample)
WO (1) WO2014079737A2 (enExample)

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Publication number Priority date Publication date Assignee Title
EP2865787A1 (en) * 2013-10-22 2015-04-29 ATOTECH Deutschland GmbH Copper electroplating method
ES2639300T3 (es) * 2014-12-16 2017-10-26 Atotech Deutschland Gmbh Composiciones de baño de chapado para el chapado no electrolítico de metales y aleaciones metálicas
WO2016169952A1 (en) 2015-04-20 2016-10-27 Atotech Deutschland Gmbh Electrolytic copper plating bath compositions and a method for their use
TWI662161B (zh) * 2015-08-31 2019-06-11 德商德國艾托特克公司 水性銅電鍍浴及沉積銅或銅合金於基板上之方法
EP3135709B1 (en) 2015-08-31 2018-01-10 ATOTECH Deutschland GmbH Imidazoyl urea polymers and their use in metal or metal alloy plating bath compositions
ES2681836T3 (es) 2015-09-10 2018-09-17 Atotech Deutschland Gmbh Composición de baño para chapado de cobre
TWI713737B (zh) 2016-05-04 2020-12-21 德商德國艾托特克公司 沉積金屬或金屬合金至基板表面及包含基板表面活化之方法
WO2018033461A1 (en) 2016-08-15 2018-02-22 Atotech Deutschland Gmbh Acidic aqueous composition for electrolytic copper plating
EP3360988B1 (en) 2017-02-09 2019-06-26 ATOTECH Deutschland GmbH Pyridinium compounds, a synthesis method therefor, metal or metal alloy plating baths containing said pyridinium compounds and a method for use of said metal or metal alloy plating baths
PT3508620T (pt) 2018-01-09 2021-07-12 Atotech Deutschland Gmbh Aditivo de ureileno, a sua utilização e um método de preparação para esse fim
EP3901331A1 (en) 2020-04-23 2021-10-27 ATOTECH Deutschland GmbH Acidic aqueous composition for electrolytically depositing a copper deposit
EP3933073B1 (en) * 2020-06-29 2023-11-29 Atotech Deutschland GmbH & Co. KG Copper electroplating bath
CN112899736A (zh) * 2021-01-15 2021-06-04 深圳中科利尔科技有限公司 一种pcb高纵横通孔电镀铜添加剂及其制备方法
EP4032930B1 (en) 2021-01-22 2023-08-30 Atotech Deutschland GmbH & Co. KG Biuret-based quaternized polymers and their use in metal or metal alloy plating baths
EP4063533A1 (en) 2021-03-25 2022-09-28 Atotech Deutschland GmbH & Co. KG A process for electrochemical deposition of copper with different current densities
KR102339862B1 (ko) * 2021-07-06 2021-12-16 와이엠티 주식회사 레벨링제 및 이를 포함하는 회로패턴 형성용 전기도금 조성물
KR102339861B1 (ko) * 2021-07-26 2021-12-16 와이엠티 주식회사 레벨링제 및 이를 포함하는 금속박 형성용 전기도금 조성물
KR102339866B1 (ko) * 2021-08-04 2021-12-16 와이엠티 주식회사 레벨링제 및 이를 포함하는 유리비아홀 기판 도금을 위한 전기도금 조성물
CN118812171A (zh) * 2023-04-17 2024-10-22 财团法人工业技术研究院 贯穿玻璃的通孔的铜金属化方法和由此制造的玻璃制品

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DE3012168A1 (de) * 1980-03-27 1981-10-01 Schering Ag Berlin Und Bergkamen, 1000 Berlin Verfahren zur galvanischen abscheidung von kupferniederschlaegen
DE4126502C1 (enExample) * 1991-08-07 1993-02-11 Schering Ag Berlin Und Bergkamen, 1000 Berlin, De
DE4344387C2 (de) 1993-12-24 1996-09-05 Atotech Deutschland Gmbh Verfahren zur elektrolytischen Abscheidung von Kupfer und Anordnung zur Durchführung des Verfahrens
DE19545231A1 (de) 1995-11-21 1997-05-22 Atotech Deutschland Gmbh Verfahren zur elektrolytischen Abscheidung von Metallschichten
US6387229B1 (en) * 1999-05-07 2002-05-14 Enthone, Inc. Alloy plating
JP2001073182A (ja) * 1999-07-15 2001-03-21 Boc Group Inc:The 改良された酸性銅電気メッキ用溶液
US6800188B2 (en) 2001-05-09 2004-10-05 Ebara-Udylite Co., Ltd. Copper plating bath and plating method for substrate using the copper plating bath
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KR100598994B1 (ko) 2002-12-25 2006-07-07 닛코킨조쿠 가부시키가이샤 특정골격을 갖는 4급아민화합물 중합체 및 유기유황화합물을 첨가제로서 포함하는 동전해액 및 그것에 의하여 제조되는 전해동박
KR100729061B1 (ko) 2003-07-29 2007-06-14 닛코킨조쿠 가부시키가이샤 특정골격을 갖는 디알킬아미노기 함유 중합체 및 유기유황화합물을 첨가제로서 포함하는 구리전해액 및 이것에 의해제조되는 전해구리박
EP1598449B1 (en) * 2004-04-26 2010-08-04 Rohm and Haas Electronic Materials, L.L.C. Improved plating method
DE102005060030A1 (de) * 2005-12-15 2007-06-21 Coventya Gmbh Quervernetzte Polymere, diese enthaltende Galvanisierungsbäder sowie deren Verwendung
EP2292679B1 (de) 2009-09-08 2020-03-11 ATOTECH Deutschland GmbH Polymere mit Aminoendgruppen und deren Verwendung als Additive für galvanische Zink- und Zinklegierungsbäder
DE102011008836B4 (de) * 2010-08-17 2013-01-10 Umicore Galvanotechnik Gmbh Elektrolyt und Verfahren zur Abscheidung von Kupfer-Zinn-Legierungsschichten
EP2518187A1 (en) 2011-04-26 2012-10-31 Atotech Deutschland GmbH Aqueous acidic bath for electrolytic deposition of copper
EP2865787A1 (en) * 2013-10-22 2015-04-29 ATOTECH Deutschland GmbH Copper electroplating method

Also Published As

Publication number Publication date
TWI600802B (zh) 2017-10-01
CN104854265A (zh) 2015-08-19
EP2922985A2 (en) 2015-09-30
US9551080B2 (en) 2017-01-24
WO2014079737A3 (en) 2014-09-12
CN104854265B (zh) 2017-08-08
WO2014079737A2 (en) 2014-05-30
JP2016503461A (ja) 2016-02-04
EP2922985B1 (en) 2016-09-14
US20150299883A1 (en) 2015-10-22
PH12015501137A1 (en) 2015-08-03
EP2735627A1 (en) 2014-05-28
JP6279598B2 (ja) 2018-02-14
PH12015501137B1 (en) 2015-08-03
TW201422854A (zh) 2014-06-16
KR20150088307A (ko) 2015-07-31

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