PH12015501137A1 - Copper plating bath composition - Google Patents
Copper plating bath compositionInfo
- Publication number
- PH12015501137A1 PH12015501137A1 PH12015501137A PH12015501137A PH12015501137A1 PH 12015501137 A1 PH12015501137 A1 PH 12015501137A1 PH 12015501137 A PH12015501137 A PH 12015501137A PH 12015501137 A PH12015501137 A PH 12015501137A PH 12015501137 A1 PH12015501137 A1 PH 12015501137A1
- Authority
- PH
- Philippines
- Prior art keywords
- plating bath
- copper
- copper plating
- bath composition
- present
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/38—Electroplating: Baths therefor from solutions of copper
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/56—Electroplating: Baths therefor from solutions of alloys
- C25D3/58—Electroplating: Baths therefor from solutions of alloys containing more than 50% by weight of copper
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/02—Electroplating of selected surface areas
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
- H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electroplating And Plating Baths Therefor (AREA)
- Electroplating Methods And Accessories (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP12194261.9A EP2735627A1 (en) | 2012-11-26 | 2012-11-26 | Copper plating bath composition |
| PCT/EP2013/073629 WO2014079737A2 (en) | 2012-11-26 | 2013-11-12 | Copper plating bath composition |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| PH12015501137B1 PH12015501137B1 (en) | 2015-08-03 |
| PH12015501137A1 true PH12015501137A1 (en) | 2015-08-03 |
Family
ID=47226032
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PH12015501137A PH12015501137A1 (en) | 2012-11-26 | 2015-05-21 | Copper plating bath composition |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US9551080B2 (enExample) |
| EP (2) | EP2735627A1 (enExample) |
| JP (1) | JP6279598B2 (enExample) |
| KR (1) | KR102193485B1 (enExample) |
| CN (1) | CN104854265B (enExample) |
| PH (1) | PH12015501137A1 (enExample) |
| TW (1) | TWI600802B (enExample) |
| WO (1) | WO2014079737A2 (enExample) |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2865787A1 (en) * | 2013-10-22 | 2015-04-29 | ATOTECH Deutschland GmbH | Copper electroplating method |
| ES2639300T3 (es) * | 2014-12-16 | 2017-10-26 | Atotech Deutschland Gmbh | Composiciones de baño de chapado para el chapado no electrolítico de metales y aleaciones metálicas |
| TWI667376B (zh) * | 2015-04-20 | 2019-08-01 | 德商德國艾托特克公司 | 電解銅電鍍浴組合物及其使用方法 |
| EP3135709B1 (en) | 2015-08-31 | 2018-01-10 | ATOTECH Deutschland GmbH | Imidazoyl urea polymers and their use in metal or metal alloy plating bath compositions |
| JP6790075B2 (ja) * | 2015-08-31 | 2020-11-25 | アトテツク・ドイチユラント・ゲゼルシヤフト・ミツト・ベシユレンクテル・ハフツングAtotech Deutschland GmbH | 水性銅めっき浴および基板上での銅または銅合金の析出方法 |
| ES2681836T3 (es) | 2015-09-10 | 2018-09-17 | Atotech Deutschland Gmbh | Composición de baño para chapado de cobre |
| WO2017191260A1 (en) | 2016-05-04 | 2017-11-09 | Atotech Deutschland Gmbh | Process for depositing a metal or metal alloy on a surface of a substrate including its activation |
| CN109790638B (zh) | 2016-08-15 | 2021-06-18 | 德国艾托特克公司 | 用于电解镀铜的酸性水性组合物 |
| EP3360988B1 (en) * | 2017-02-09 | 2019-06-26 | ATOTECH Deutschland GmbH | Pyridinium compounds, a synthesis method therefor, metal or metal alloy plating baths containing said pyridinium compounds and a method for use of said metal or metal alloy plating baths |
| ES2881029T3 (es) | 2018-01-09 | 2021-11-26 | Atotech Deutschland Gmbh | Aditivo de ureileno, su uso y un método para su preparación |
| EP3901331A1 (en) | 2020-04-23 | 2021-10-27 | ATOTECH Deutschland GmbH | Acidic aqueous composition for electrolytically depositing a copper deposit |
| EP3933073B1 (en) | 2020-06-29 | 2023-11-29 | Atotech Deutschland GmbH & Co. KG | Copper electroplating bath |
| CN112899736A (zh) * | 2021-01-15 | 2021-06-04 | 深圳中科利尔科技有限公司 | 一种pcb高纵横通孔电镀铜添加剂及其制备方法 |
| EP4032930B1 (en) | 2021-01-22 | 2023-08-30 | Atotech Deutschland GmbH & Co. KG | Biuret-based quaternized polymers and their use in metal or metal alloy plating baths |
| EP4063533A1 (en) | 2021-03-25 | 2022-09-28 | Atotech Deutschland GmbH & Co. KG | A process for electrochemical deposition of copper with different current densities |
| KR102339862B1 (ko) * | 2021-07-06 | 2021-12-16 | 와이엠티 주식회사 | 레벨링제 및 이를 포함하는 회로패턴 형성용 전기도금 조성물 |
| KR102339861B1 (ko) * | 2021-07-26 | 2021-12-16 | 와이엠티 주식회사 | 레벨링제 및 이를 포함하는 금속박 형성용 전기도금 조성물 |
| KR102339866B1 (ko) * | 2021-08-04 | 2021-12-16 | 와이엠티 주식회사 | 레벨링제 및 이를 포함하는 유리비아홀 기판 도금을 위한 전기도금 조성물 |
| CN118812171A (zh) * | 2023-04-17 | 2024-10-22 | 财团法人工业技术研究院 | 贯穿玻璃的通孔的铜金属化方法和由此制造的玻璃制品 |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3012168A1 (de) * | 1980-03-27 | 1981-10-01 | Schering Ag Berlin Und Bergkamen, 1000 Berlin | Verfahren zur galvanischen abscheidung von kupferniederschlaegen |
| DE4126502C1 (enExample) * | 1991-08-07 | 1993-02-11 | Schering Ag Berlin Und Bergkamen, 1000 Berlin, De | |
| DE4344387C2 (de) | 1993-12-24 | 1996-09-05 | Atotech Deutschland Gmbh | Verfahren zur elektrolytischen Abscheidung von Kupfer und Anordnung zur Durchführung des Verfahrens |
| DE19545231A1 (de) | 1995-11-21 | 1997-05-22 | Atotech Deutschland Gmbh | Verfahren zur elektrolytischen Abscheidung von Metallschichten |
| US6387229B1 (en) * | 1999-05-07 | 2002-05-14 | Enthone, Inc. | Alloy plating |
| JP2001073182A (ja) | 1999-07-15 | 2001-03-21 | Boc Group Inc:The | 改良された酸性銅電気メッキ用溶液 |
| TWI228156B (en) * | 2001-05-09 | 2005-02-21 | Ebara Udylite Kk | Copper-plating bath, method for electroplating substrate by using the same, and additives for the bath |
| CN1410601A (zh) * | 2001-09-27 | 2003-04-16 | 长春石油化学股份有限公司 | 用于铜集成电路内连线的铜电镀液组合物 |
| WO2004059040A1 (ja) * | 2002-12-25 | 2004-07-15 | Nikko Materials Co., Ltd. | 特定骨格を有する四級アミン化合物重合体及び有機硫黄化合物を添加剤として含む銅電解液並びにそれにより製造される電解銅箔 |
| CN1806067B (zh) * | 2003-07-29 | 2010-06-16 | 日矿金属株式会社 | 含有具有特定骨架的含二烷基氨基的聚合物和有机硫化合物作为添加剂的铜电解液以及由该电解液制造的电解铜箔 |
| DE602005022650D1 (de) * | 2004-04-26 | 2010-09-16 | Rohm & Haas Elect Mat | Verbessertes Plattierungsverfahren |
| DE102005060030A1 (de) * | 2005-12-15 | 2007-06-21 | Coventya Gmbh | Quervernetzte Polymere, diese enthaltende Galvanisierungsbäder sowie deren Verwendung |
| EP2292679B1 (de) * | 2009-09-08 | 2020-03-11 | ATOTECH Deutschland GmbH | Polymere mit Aminoendgruppen und deren Verwendung als Additive für galvanische Zink- und Zinklegierungsbäder |
| DE102011008836B4 (de) * | 2010-08-17 | 2013-01-10 | Umicore Galvanotechnik Gmbh | Elektrolyt und Verfahren zur Abscheidung von Kupfer-Zinn-Legierungsschichten |
| EP2518187A1 (en) | 2011-04-26 | 2012-10-31 | Atotech Deutschland GmbH | Aqueous acidic bath for electrolytic deposition of copper |
| EP2865787A1 (en) * | 2013-10-22 | 2015-04-29 | ATOTECH Deutschland GmbH | Copper electroplating method |
-
2012
- 2012-11-26 EP EP12194261.9A patent/EP2735627A1/en not_active Withdrawn
-
2013
- 2013-11-06 TW TW102140324A patent/TWI600802B/zh active
- 2013-11-12 JP JP2015543389A patent/JP6279598B2/ja active Active
- 2013-11-12 CN CN201380061184.6A patent/CN104854265B/zh active Active
- 2013-11-12 KR KR1020157016894A patent/KR102193485B1/ko active Active
- 2013-11-12 US US14/646,739 patent/US9551080B2/en active Active
- 2013-11-12 WO PCT/EP2013/073629 patent/WO2014079737A2/en not_active Ceased
- 2013-11-12 EP EP13792639.0A patent/EP2922985B1/en active Active
-
2015
- 2015-05-21 PH PH12015501137A patent/PH12015501137A1/en unknown
Also Published As
| Publication number | Publication date |
|---|---|
| EP2922985A2 (en) | 2015-09-30 |
| WO2014079737A2 (en) | 2014-05-30 |
| CN104854265B (zh) | 2017-08-08 |
| PH12015501137B1 (en) | 2015-08-03 |
| KR20150088307A (ko) | 2015-07-31 |
| TW201422854A (zh) | 2014-06-16 |
| TWI600802B (zh) | 2017-10-01 |
| EP2922985B1 (en) | 2016-09-14 |
| US9551080B2 (en) | 2017-01-24 |
| WO2014079737A3 (en) | 2014-09-12 |
| CN104854265A (zh) | 2015-08-19 |
| JP6279598B2 (ja) | 2018-02-14 |
| US20150299883A1 (en) | 2015-10-22 |
| JP2016503461A (ja) | 2016-02-04 |
| EP2735627A1 (en) | 2014-05-28 |
| KR102193485B1 (ko) | 2020-12-22 |
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