JP6278633B2 - 薄膜トランジスタアレイ基板およびその製造方法、並びに、液晶表示装置およびその製造方法 - Google Patents

薄膜トランジスタアレイ基板およびその製造方法、並びに、液晶表示装置およびその製造方法 Download PDF

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JP6278633B2
JP6278633B2 JP2013155544A JP2013155544A JP6278633B2 JP 6278633 B2 JP6278633 B2 JP 6278633B2 JP 2013155544 A JP2013155544 A JP 2013155544A JP 2013155544 A JP2013155544 A JP 2013155544A JP 6278633 B2 JP6278633 B2 JP 6278633B2
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electrode
film
source
array substrate
gate
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JP2015025955A (ja
JP2015025955A5 (enExample
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利彦 岩坂
利彦 岩坂
平川　誠
誠 平川
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0231—Manufacture or treatment of multiple TFTs using masks, e.g. half-tone masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

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  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Film Transistor (AREA)
JP2013155544A 2013-07-26 2013-07-26 薄膜トランジスタアレイ基板およびその製造方法、並びに、液晶表示装置およびその製造方法 Active JP6278633B2 (ja)

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JP2013155544A JP6278633B2 (ja) 2013-07-26 2013-07-26 薄膜トランジスタアレイ基板およびその製造方法、並びに、液晶表示装置およびその製造方法
US14/336,410 US9252161B2 (en) 2013-07-26 2014-07-21 Thin film transistor array substrate and manufacturing method thereof, and liquid crystal display device and manufacturing method thereof

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JP2013155544A JP6278633B2 (ja) 2013-07-26 2013-07-26 薄膜トランジスタアレイ基板およびその製造方法、並びに、液晶表示装置およびその製造方法

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JP2015025955A JP2015025955A (ja) 2015-02-05
JP2015025955A5 JP2015025955A5 (enExample) 2016-09-08
JP6278633B2 true JP6278633B2 (ja) 2018-02-14

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US (1) US9252161B2 (enExample)
JP (1) JP6278633B2 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6315966B2 (ja) * 2013-12-11 2018-04-25 三菱電機株式会社 アクティブマトリックス基板およびその製造方法
JP6214019B2 (ja) * 2014-03-07 2017-10-18 株式会社Ｊｏｌｅｄ バンクの補修方法、有機ｅｌ表示装置およびその製造方法
CN104362152B (zh) * 2014-09-16 2017-08-01 京东方科技集团股份有限公司 一种阵列基板的制备方法
CN105223740B (zh) * 2015-11-05 2019-01-22 深圳市华星光电技术有限公司 阵列基板及其制造方法、液晶显示面板
CN109270754B (zh) * 2017-07-17 2021-04-27 京东方科技集团股份有限公司 阵列基板和显示装置
JP6978243B2 (ja) * 2017-07-26 2021-12-08 三菱電機株式会社 アレイ基板と当該アレイ基板を有する液晶表示装置
JP2019184698A (ja) * 2018-04-04 2019-10-24 三菱電機株式会社 液晶表示装置と当該液晶表示装置の製造方法
WO2020174605A1 (ja) * 2019-02-27 2020-09-03 シャープ株式会社 表示装置及びその製造方法
CN114023700B (zh) * 2021-10-29 2022-11-01 惠州华星光电显示有限公司 一种tft基板的制作方法及tft基板

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JP3474309B2 (ja) * 1995-03-24 2003-12-08 株式会社半導体エネルギー研究所 アクティブマトリクス型の液晶表示装置の作製方法
JP4004835B2 (ja) 2002-04-02 2007-11-07 株式会社アドバンスト・ディスプレイ 薄膜トランジスタアレイ基板の製造方法
KR20060069081A (ko) * 2004-12-17 2006-06-21 삼성전자주식회사 박막 트랜지스터 표시판 및 그의 제조 방법
KR101085450B1 (ko) * 2005-02-07 2011-11-21 삼성전자주식회사 박막트랜지스터 기판과 그 제조방법
KR20070019457A (ko) * 2005-08-12 2007-02-15 삼성전자주식회사 박막 트랜지스터 표시판 및 이를 포함하는 액정표시장치
JP2007102225A (ja) * 2005-10-05 2007-04-19 Samsung Electronics Co Ltd 薄膜トランジスタ表示板及びその製造方法
KR100818887B1 (ko) * 2005-12-14 2008-04-02 엘지.필립스 엘시디 주식회사 액정 표시장치 및 그 제조 방법
KR101192750B1 (ko) * 2005-12-30 2012-10-18 엘지디스플레이 주식회사 Ｔｆｔ 어레이 기판 및 그 제조방법
KR20080001181A (ko) * 2006-06-29 2008-01-03 엘지.필립스 엘시디 주식회사 액정표시장치용 어레이 기판과 그 제조방법
KR101284697B1 (ko) * 2006-06-30 2013-07-23 엘지디스플레이 주식회사 액정표시장치용 어레이 기판과 그 제조방법
JP5081444B2 (ja) * 2006-12-21 2012-11-28 株式会社ジャパンディスプレイイースト 表示装置
KR101373735B1 (ko) * 2007-02-22 2014-03-14 삼성디스플레이 주식회사 신호선의 제조 방법, 박막 트랜지스터 표시판 및 그의 제조방법
JP4374552B2 (ja) * 2007-04-12 2009-12-02 ソニー株式会社 基板の製造方法および基板製造システム、並びに表示装置の製造方法
KR101294232B1 (ko) * 2007-06-08 2013-08-07 엘지디스플레이 주식회사 프린지 필드 스위칭 모드 액정표시장치용 어레이 기판 및이의 제조 방법
JP5409024B2 (ja) * 2008-02-15 2014-02-05 株式会社半導体エネルギー研究所 表示装置
JP5456980B2 (ja) * 2008-02-15 2014-04-02 三菱電機株式会社 液晶表示装置、及びその製造方法
JP5113609B2 (ja) * 2008-04-24 2013-01-09 パナソニック液晶ディスプレイ株式会社 表示装置及びその製造方法
JP2009288462A (ja) * 2008-05-28 2009-12-10 Ips Alpha Technology Ltd 表示装置及びその製造方法
GB2464143B (en) * 2008-06-25 2011-03-30 Lg Display Co Ltd Array substrate for fringe field switching mode liquid crystal display device and fringe field switching mode liquid crystal display device including the same
KR101499239B1 (ko) * 2008-08-26 2015-03-06 삼성디스플레이 주식회사 박막 트랜지스터 표시판 및 그 제조 방법
JP5646162B2 (ja) 2009-01-23 2014-12-24 三菱電機株式会社 薄膜トランジスタアレイ基板、その製造方法、及び液晶表示装置
KR20120060664A (ko) * 2010-12-02 2012-06-12 삼성전자주식회사 표시 장치 및 표시 장치 제조 방법
JP5907697B2 (ja) * 2011-11-09 2016-04-26 三菱電機株式会社 配線構造及びそれを備える薄膜トランジスタアレイ基板並びに表示装置
TWI489560B (zh) * 2011-11-24 2015-06-21 Au Optronics Corp 畫素結構及其製作方法
JP5286438B2 (ja) * 2012-10-18 2013-09-11 三菱電機株式会社 液晶表示装置
JP6238712B2 (ja) * 2013-12-05 2017-11-29 三菱電機株式会社 薄膜トランジスタ基板およびその製造方法
JP6315966B2 (ja) * 2013-12-11 2018-04-25 三菱電機株式会社 アクティブマトリックス基板およびその製造方法

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US20150028340A1 (en) 2015-01-29
US9252161B2 (en) 2016-02-02

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