JP6253150B2 - エピタキシャルウエハ及びその製造方法 - Google Patents

エピタキシャルウエハ及びその製造方法 Download PDF

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Publication number
JP6253150B2
JP6253150B2 JP2014097751A JP2014097751A JP6253150B2 JP 6253150 B2 JP6253150 B2 JP 6253150B2 JP 2014097751 A JP2014097751 A JP 2014097751A JP 2014097751 A JP2014097751 A JP 2014097751A JP 6253150 B2 JP6253150 B2 JP 6253150B2
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Prior art keywords
single crystal
plane
gas
semiconductor substrate
growth
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JP2014097751A
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Japanese (ja)
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JP2015214448A (ja
JP2015214448A5 (enExample
Inventor
後藤　健
健 後藤
纐纈　明伯
明伯 纐纈
熊谷　義直
義直 熊谷
尚 村上
尚 村上
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Tamura Corp
Tokyo University of Agriculture and Technology NUC
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Tamura Corp
Tokyo University of Agriculture and Technology NUC
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Priority to JP2014097751A priority Critical patent/JP6253150B2/ja
Application filed by Tamura Corp, Tokyo University of Agriculture and Technology NUC filed Critical Tamura Corp
Priority to PCT/JP2015/063523 priority patent/WO2015170774A1/ja
Priority to US15/309,956 priority patent/US10676841B2/en
Priority to EP15789328.0A priority patent/EP3141635B1/en
Priority to TW104114927A priority patent/TWI721945B/zh
Priority to CN201580024046.XA priority patent/CN106471163B/zh
Publication of JP2015214448A publication Critical patent/JP2015214448A/ja
Publication of JP2015214448A5 publication Critical patent/JP2015214448A5/ja
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/20—Epitaxial-layer growth characterised by the substrate the substrate being of the same materials as the epitaxial layer
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02414—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/02428—Structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/02428—Structure
    • H01L21/0243—Surface structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/02433—Crystal orientation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02598—Microstructure monocrystalline
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02634—Homoepitaxy
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H10D62/405—Orientations of crystalline planes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/875—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being semiconductor metal oxide, e.g. InGaZnO

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
JP2014097751A 2014-05-09 2014-05-09 エピタキシャルウエハ及びその製造方法 Active JP6253150B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2014097751A JP6253150B2 (ja) 2014-05-09 2014-05-09 エピタキシャルウエハ及びその製造方法
US15/309,956 US10676841B2 (en) 2014-05-09 2015-05-11 Semiconductor substrate, epitaxial wafer, and method for manufacturing epitaxial wafer
EP15789328.0A EP3141635B1 (en) 2014-05-09 2015-05-11 Semiconductor substrate, epitaxial wafer, and method for manufacturing epitaxial wafer
TW104114927A TWI721945B (zh) 2014-05-09 2015-05-11 半導體基板、以及磊晶晶圓及其製造方法
PCT/JP2015/063523 WO2015170774A1 (ja) 2014-05-09 2015-05-11 半導体基板、並びにエピタキシャルウエハ及びその製造方法
CN201580024046.XA CN106471163B (zh) 2014-05-09 2015-05-11 半导体衬底、外延片及其制造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014097751A JP6253150B2 (ja) 2014-05-09 2014-05-09 エピタキシャルウエハ及びその製造方法

Publications (3)

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JP2015214448A JP2015214448A (ja) 2015-12-03
JP2015214448A5 JP2015214448A5 (enExample) 2017-08-10
JP6253150B2 true JP6253150B2 (ja) 2017-12-27

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US (1) US10676841B2 (enExample)
EP (1) EP3141635B1 (enExample)
JP (1) JP6253150B2 (enExample)
CN (1) CN106471163B (enExample)
TW (1) TWI721945B (enExample)
WO (1) WO2015170774A1 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5984069B2 (ja) * 2013-09-30 2016-09-06 株式会社タムラ製作所 β−Ｇａ２Ｏ３系単結晶膜の成長方法、及び結晶積層構造体
JP6744523B2 (ja) * 2015-12-16 2020-08-19 株式会社タムラ製作所 半導体基板、並びにエピタキシャルウエハ及びその製造方法
CN113614292B (zh) * 2019-03-28 2024-08-23 日本碍子株式会社 半导体膜
CN113394079A (zh) * 2021-06-18 2021-09-14 中国电子科技集团公司第四十六研究所 一种采用卤化物气相外延法生长氧化镓外延层的方法
DE112021008176T5 (de) * 2021-09-03 2024-06-27 Mitsubishi Electric Corporation Kristall-laminierungsstruktur, halbleitereinrichtung und verfahren zum herstellen einer kristall-laminierungsstruktur
JPWO2024048710A1 (enExample) * 2022-08-31 2024-03-07

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US7008839B2 (en) * 2002-03-08 2006-03-07 Matsushita Electric Industrial Co., Ltd. Method for manufacturing semiconductor thin film
JP4680762B2 (ja) 2005-12-14 2011-05-11 株式会社光波 発光素子及びその製造方法
US20070134833A1 (en) 2005-12-14 2007-06-14 Toyoda Gosei Co., Ltd. Semiconductor element and method of making same
GB2436398B (en) * 2006-03-23 2011-08-24 Univ Bath Growth method using nanostructure compliant layers and HVPE for producing high quality compound semiconductor materials
KR100969127B1 (ko) * 2010-02-18 2010-07-09 엘지이노텍 주식회사 발광 소자, 발광 소자 제조방법 및 발광 소자 패키지
CN101967680B (zh) * 2010-11-04 2012-02-01 山东大学 一种在氧化镁衬底上制备单斜晶型氧化镓单晶薄膜的方法
CN110071170B (zh) 2011-09-08 2022-10-11 株式会社田村制作所 晶体层叠结构体
EP2754736B1 (en) * 2011-09-08 2024-11-06 Tamura Corporation Crystal laminate structure and method for producing same
CN110047922A (zh) 2011-09-08 2019-07-23 株式会社田村制作所 Ga2O3系MISFET和Ga2O3系MESFET
CN103765593B (zh) * 2011-09-08 2017-06-09 株式会社田村制作所 Ga2O3系半导体元件
JP2013229554A (ja) * 2012-03-30 2013-11-07 Mitsubishi Chemicals Corp 周期表第１３族金属窒化物半導体結晶の製造方法、それに用いるノズルおよび製造装置
JP2013227202A (ja) * 2012-03-30 2013-11-07 Mitsubishi Chemicals Corp 周期表第１３族金属窒化物半導体結晶の製造方法、および、当該製造方法によって得られた周期表第１３族金属窒化物半導体結晶を用いた半導体発光デバイス
CN103489967B (zh) * 2013-09-05 2016-07-13 大连理工大学 一种氧化镓外延膜的制备方法及氧化镓外延膜
JP5984069B2 (ja) 2013-09-30 2016-09-06 株式会社タムラ製作所 β−Ｇａ２Ｏ３系単結晶膜の成長方法、及び結晶積層構造体

Also Published As

Publication number Publication date
JP2015214448A (ja) 2015-12-03
TW201606114A (zh) 2016-02-16
TWI721945B (zh) 2021-03-21
WO2015170774A1 (ja) 2015-11-12
CN106471163A (zh) 2017-03-01
EP3141635B1 (en) 2023-05-03
CN106471163B (zh) 2020-03-24
EP3141635A4 (en) 2018-01-10
EP3141635A1 (en) 2017-03-15
US10676841B2 (en) 2020-06-09
US20170145590A1 (en) 2017-05-25

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