JP6242211B2 - 撮像装置および撮像システム - Google Patents

撮像装置および撮像システム Download PDF

Info

Publication number
JP6242211B2
JP6242211B2 JP2013269673A JP2013269673A JP6242211B2 JP 6242211 B2 JP6242211 B2 JP 6242211B2 JP 2013269673 A JP2013269673 A JP 2013269673A JP 2013269673 A JP2013269673 A JP 2013269673A JP 6242211 B2 JP6242211 B2 JP 6242211B2
Authority
JP
Japan
Prior art keywords
type transistor
gate
circuit
potential
potential difference
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2013269673A
Other languages
English (en)
Japanese (ja)
Other versions
JP2015126385A (ja
JP2015126385A5 (enExample
Inventor
和夫 國米
和夫 國米
裕介 大貫
裕介 大貫
裕章 成瀬
裕章 成瀬
将司 楠川
将司 楠川
克範 廣田
克範 廣田
遠藤　信之
信之 遠藤
和男 山崎
和男 山崎
小林　広明
広明 小林
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2013269673A priority Critical patent/JP6242211B2/ja
Priority to US14/579,789 priority patent/US9247173B2/en
Priority to CN201410808890.9A priority patent/CN104754254B/zh
Publication of JP2015126385A publication Critical patent/JP2015126385A/ja
Publication of JP2015126385A5 publication Critical patent/JP2015126385A5/ja
Application granted granted Critical
Publication of JP6242211B2 publication Critical patent/JP6242211B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP2013269673A 2013-12-26 2013-12-26 撮像装置および撮像システム Active JP6242211B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2013269673A JP6242211B2 (ja) 2013-12-26 2013-12-26 撮像装置および撮像システム
US14/579,789 US9247173B2 (en) 2013-12-26 2014-12-22 Imaging apparatus and imaging system
CN201410808890.9A CN104754254B (zh) 2013-12-26 2014-12-23 成像设备和成像系统

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013269673A JP6242211B2 (ja) 2013-12-26 2013-12-26 撮像装置および撮像システム

Publications (3)

Publication Number Publication Date
JP2015126385A JP2015126385A (ja) 2015-07-06
JP2015126385A5 JP2015126385A5 (enExample) 2017-02-02
JP6242211B2 true JP6242211B2 (ja) 2017-12-06

Family

ID=53483394

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013269673A Active JP6242211B2 (ja) 2013-12-26 2013-12-26 撮像装置および撮像システム

Country Status (3)

Country Link
US (1) US9247173B2 (enExample)
JP (1) JP6242211B2 (enExample)
CN (1) CN104754254B (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9947700B2 (en) * 2016-02-03 2018-04-17 Semiconductor Energy Laboratory Co., Ltd. Imaging device and electronic device
US10687003B2 (en) 2016-08-04 2020-06-16 Omnivision Technologies, Inc. Linear-logarithmic image sensor
KR102453118B1 (ko) * 2017-10-30 2022-10-07 소니 세미컨덕터 솔루션즈 가부시키가이샤 고체 촬상 소자
JP7689307B2 (ja) * 2020-01-30 2025-06-06 パナソニックＩｐマネジメント株式会社 撮像装置
KR20230100789A (ko) * 2021-12-28 2023-07-06 삼성디스플레이 주식회사 표시 장치
US20230299109A1 (en) * 2022-03-18 2023-09-21 Taiwan Semiconductor Manufacturing Company, Ltd. Stacked image sensors and methods of manufacturing thereof
DE102022124675A1 (de) 2022-09-26 2024-03-28 Ifm Electronic Gmbh PMD-Sensor mit mehreren Halbleiterebenen

Family Cites Families (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000224495A (ja) * 1998-11-24 2000-08-11 Canon Inc 撮像装置及びそれを用いた撮像システム
JP3844699B2 (ja) * 2001-02-19 2006-11-15 イノテック株式会社 可変利得アンプ
WO2003085964A1 (en) * 2002-04-04 2003-10-16 Sony Corporation Solid-state image pickup device
JP4581792B2 (ja) * 2004-07-05 2010-11-17 コニカミノルタホールディングス株式会社 固体撮像装置及びこれを備えたカメラ
KR100682829B1 (ko) * 2005-05-18 2007-02-15 삼성전자주식회사 씨모스 이미지 센서의 단위 픽셀, 픽셀 어레이 및 이를포함한 씨모스 이미지 센서
KR100653716B1 (ko) 2005-07-19 2006-12-05 삼성전자주식회사 이미지 센서 및 그 제조 방법
JP4533821B2 (ja) * 2005-08-16 2010-09-01 パナソニック株式会社 Ｍｏｓ型固体撮像装置
CN100511693C (zh) * 2005-08-31 2009-07-08 佳能株式会社 辐射检测设备、辐射成像设备和辐射成像系统
WO2007083704A1 (ja) * 2006-01-18 2007-07-26 National University Corporation Shizuoka University 固体撮像装置及びその画素信号の読みだし方法
JP4442578B2 (ja) * 2006-03-14 2010-03-31 ソニー株式会社 Ａｄ変換装置、物理量分布検出装置および撮像装置
CN101118915B (zh) * 2007-08-08 2011-08-10 友达光电股份有限公司 光感测元件及其制作方法
JP5262180B2 (ja) * 2008-02-26 2013-08-14 ソニー株式会社 固体撮像装置及びカメラ
JP2010010740A (ja) * 2008-06-24 2010-01-14 Sanyo Electric Co Ltd 撮像装置
JP2010068433A (ja) * 2008-09-12 2010-03-25 Toshiba Corp 固体撮像装置およびその駆動方法
KR101543664B1 (ko) * 2008-12-08 2015-08-12 삼성전자주식회사 픽셀 어레이 및 이를 포함하는 입체 영상 센서
JP2011054832A (ja) 2009-09-03 2011-03-17 Panasonic Corp 増幅型固体撮像素子およびその製造方法
JP5531580B2 (ja) * 2009-11-25 2014-06-25 ソニー株式会社 固体撮像装置、および、その製造方法、電子機器
WO2011064924A1 (ja) * 2009-11-26 2011-06-03 パナソニック株式会社 固体撮像装置および撮像装置
JP5700973B2 (ja) * 2010-08-05 2015-04-15 キヤノン株式会社 検出装置及び放射線検出システム
JP2012079860A (ja) * 2010-09-30 2012-04-19 Canon Inc 検出装置及び放射線検出システム
JP6299058B2 (ja) * 2011-03-02 2018-03-28 ソニー株式会社 固体撮像装置、固体撮像装置の製造方法及び電子機器
JP5508356B2 (ja) * 2011-07-26 2014-05-28 シャープ株式会社 固体撮像装置およびその駆動方法、固体撮像装置の製造方法、並びに電子情報機器
JP5999402B2 (ja) * 2011-08-12 2016-09-28 ソニー株式会社 固体撮像素子および製造方法、並びに電子機器
JP2013069864A (ja) * 2011-09-22 2013-04-18 Canon Inc 検出装置及び検出システム
TWI467751B (zh) * 2011-12-12 2015-01-01 Sony Corp A solid-state imaging device, a driving method of a solid-state imaging device, and an electronic device
KR102221993B1 (ko) * 2012-01-23 2021-03-02 소니 주식회사 고체 촬상 장치 및 제조 방법 및 전자 기기
CN104170372B (zh) * 2012-02-27 2019-10-15 索尼半导体解决方案公司 成像元件和电子设备
CN107340509B (zh) * 2012-03-09 2020-04-14 株式会社半导体能源研究所 半导体装置的驱动方法
JPWO2013176007A1 (ja) * 2012-05-25 2016-01-12 ソニー株式会社 撮像素子、駆動方法、および電子装置
KR102174650B1 (ko) * 2013-10-31 2020-11-05 삼성전자주식회사 이미지 센서
JP2015109343A (ja) * 2013-12-04 2015-06-11 キヤノン株式会社 半導体装置の製造方法

Also Published As

Publication number Publication date
US20150189211A1 (en) 2015-07-02
JP2015126385A (ja) 2015-07-06
CN104754254B (zh) 2018-07-31
CN104754254A (zh) 2015-07-01
US9247173B2 (en) 2016-01-26

Similar Documents

Publication Publication Date Title
JP4939514B2 (ja) 撮像装置
JP6242211B2 (ja) 撮像装置および撮像システム
US9722107B2 (en) Photoelectric conversion device and imaging system
CN105261624B (zh) 光电转换装置和成像系统
US11678083B2 (en) Imaging device
US8525896B2 (en) Solid-state imaging apparatus
US20040065808A1 (en) Image sensing device using MOS type image sensing elements
US10244193B2 (en) Imaging apparatus and imaging system
CN107195645A (zh) 摄像装置
US7791113B2 (en) CMOS image sensor and pixel of the same
CN104662893A (zh) 固体摄像装置
JP6702711B2 (ja) 光電変換装置、および、撮像システム
TW202025713A (zh) 固態攝像裝置及電子機器
JP6385187B2 (ja) 光電変換装置、光電変換システム
JP7198675B2 (ja) 固体撮像素子、その駆動回路および撮像装置
JP4383755B2 (ja) 撮像装置
JP2007305925A (ja) 固体撮像装置
JP2019024200A (ja) 光電変換装置、光電変換システム

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20161219

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20161219

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20170919

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20171010

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20171107

R151 Written notification of patent or utility model registration

Ref document number: 6242211

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R151