CN104754254B - 成像设备和成像系统 - Google Patents

成像设备和成像系统 Download PDF

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Publication number
CN104754254B
CN104754254B CN201410808890.9A CN201410808890A CN104754254B CN 104754254 B CN104754254 B CN 104754254B CN 201410808890 A CN201410808890 A CN 201410808890A CN 104754254 B CN104754254 B CN 104754254B
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transistor
circuit
potential
imaging device
gate
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Chinese (zh)
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CN104754254A (zh
Inventor
国米和夫
大贯裕介
成濑裕章
楠川将司
广田克范
远藤信之
山崎和男
小林広明
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Canon Inc
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Canon Inc
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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
CN201410808890.9A 2013-12-26 2014-12-23 成像设备和成像系统 Active CN104754254B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2013-269673 2013-12-26
JP2013269673A JP6242211B2 (ja) 2013-12-26 2013-12-26 撮像装置および撮像システム

Publications (2)

Publication Number Publication Date
CN104754254A CN104754254A (zh) 2015-07-01
CN104754254B true CN104754254B (zh) 2018-07-31

Family

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Family Applications (1)

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CN201410808890.9A Active CN104754254B (zh) 2013-12-26 2014-12-23 成像设备和成像系统

Country Status (3)

Country Link
US (1) US9247173B2 (enExample)
JP (1) JP6242211B2 (enExample)
CN (1) CN104754254B (enExample)

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KR102453118B1 (ko) * 2017-10-30 2022-10-07 소니 세미컨덕터 솔루션즈 가부시키가이샤 고체 촬상 소자
JP7689307B2 (ja) * 2020-01-30 2025-06-06 パナソニックＩｐマネジメント株式会社 撮像装置
KR20230100789A (ko) * 2021-12-28 2023-07-06 삼성디스플레이 주식회사 표시 장치
US20230299109A1 (en) * 2022-03-18 2023-09-21 Taiwan Semiconductor Manufacturing Company, Ltd. Stacked image sensors and methods of manufacturing thereof
DE102022124675A1 (de) 2022-09-26 2024-03-28 Ifm Electronic Gmbh PMD-Sensor mit mehreren Halbleiterebenen

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KR100653716B1 (ko) 2005-07-19 2006-12-05 삼성전자주식회사 이미지 센서 및 그 제조 방법
JP4533821B2 (ja) * 2005-08-16 2010-09-01 パナソニック株式会社 Ｍｏｓ型固体撮像装置
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JP4442578B2 (ja) * 2006-03-14 2010-03-31 ソニー株式会社 Ａｄ変換装置、物理量分布検出装置および撮像装置
JP5262180B2 (ja) * 2008-02-26 2013-08-14 ソニー株式会社 固体撮像装置及びカメラ
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JP5999402B2 (ja) * 2011-08-12 2016-09-28 ソニー株式会社 固体撮像素子および製造方法、並びに電子機器
JP2013069864A (ja) * 2011-09-22 2013-04-18 Canon Inc 検出装置及び検出システム
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KR102221993B1 (ko) * 2012-01-23 2021-03-02 소니 주식회사 고체 촬상 장치 및 제조 방법 및 전자 기기
CN104170372B (zh) * 2012-02-27 2019-10-15 索尼半导体解决方案公司 成像元件和电子设备
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KR102174650B1 (ko) * 2013-10-31 2020-11-05 삼성전자주식회사 이미지 센서
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Patent Citations (3)

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CN1925162A (zh) * 2005-08-31 2007-03-07 佳能株式会社 辐射检测设备、辐射成像设备和辐射成像系统
CN101118915B (zh) * 2007-08-08 2011-08-10 友达光电股份有限公司 光感测元件及其制作方法
CN102376725A (zh) * 2010-08-05 2012-03-14 佳能株式会社 检测装置和放射线检测系统

Also Published As

Publication number Publication date
US20150189211A1 (en) 2015-07-02
JP2015126385A (ja) 2015-07-06
CN104754254A (zh) 2015-07-01
US9247173B2 (en) 2016-01-26
JP6242211B2 (ja) 2017-12-06

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