JP5270964B2 - Cmosイメージセンサ及びそのピクセル - Google Patents
Cmosイメージセンサ及びそのピクセル Download PDFInfo
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- JP5270964B2 JP5270964B2 JP2008143129A JP2008143129A JP5270964B2 JP 5270964 B2 JP5270964 B2 JP 5270964B2 JP 2008143129 A JP2008143129 A JP 2008143129A JP 2008143129 A JP2008143129 A JP 2008143129A JP 5270964 B2 JP5270964 B2 JP 5270964B2
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- transfer gate
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- 238000012546 transfer Methods 0.000 claims abstract description 78
- 239000012535 impurity Substances 0.000 claims abstract description 72
- 239000000758 substrate Substances 0.000 claims abstract description 30
- 238000009792 diffusion process Methods 0.000 claims abstract description 25
- 238000007667 floating Methods 0.000 claims abstract description 25
- 230000010354 integration Effects 0.000 claims abstract description 8
- 230000001629 suppression Effects 0.000 claims description 3
- 230000000295 complement effect Effects 0.000 claims 2
- 238000009413 insulation Methods 0.000 abstract 2
- 238000005452 bending Methods 0.000 description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 229910052814 silicon oxide Inorganic materials 0.000 description 7
- 229910008065 Si-SiO Inorganic materials 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910006405 Si—SiO Inorganic materials 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- 229920005591 polysilicon Polymers 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000005381 potential energy Methods 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 125000006850 spacer group Chemical group 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000000875 corresponding effect Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 230000008034 disappearance Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14654—Blooming suppression
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Description
302 P型不純物でドーピングされたエピタキシャル層
303 P+型不純物でドーピングされた領域
304 第1のN型不純物でドーピングされた領域
305 側壁スペーサ
306 電荷転送ゲート
307 LDD領域
308 フローティング拡散領域
309 P型不純物でドーピングされた領域
310 金属配線
311 ゲート絶縁膜(SiO2)
312 第2のN型不純物でドーピングされた領域
Claims (8)
- 第1導電型の不純物でドーピングされた基板上に形成されたゲート絶縁膜と、
該ゲート絶縁膜上に形成された転送ゲートと、
該転送ゲートの一方の基板の内部に形成されたフォトダイオードと、
前記転送ゲートの他方の基板の内部に形成されたフローティング拡散ノードと、
前記基板において前記転送ゲートの下に形成されており、ブルーミング制御のための第2導電型の不純物でドーピングされた第1領域と、
前記ゲート絶縁膜と前記基板との間の界面の、前記転送ゲート長のうち前記フォトダイオード側の一部の領域に対応して形成された、しきい値電圧調整及び暗電流抑制のための第1導電型の不純物でドーピングされた第2領域と
を備え、
前記転送ゲートが、電荷集積サイクルの間、負のバイアスが印加されることを特徴とするイメージセンサのピクセル。 - 前記フォトダイオードが、ピンフォトダイオードであることを特徴とする請求項1に記載のピクセル。
- 前記第1導電型の不純物及び前記第2導電型の不純物が、各々相補的であることを特徴とする請求項1に記載のピクセル。
- 前記第1導電型の不純物及び前記第2導電型の不純物が、各々P型不純物及びN型不純物であることを特徴とする請求項3に記載のピクセル。
- 第1導電型の不純物でドーピングされた基板上に形成されたゲート絶縁膜と、
該ゲート絶縁膜上に形成された転送ゲートと、
該転送ゲートの一方の基板の内部に形成されたフォトダイオードと、
前記転送ゲートの他方の基板の内部に形成されたフローティング拡散ノードと、
電荷集積サイクルの間、前記転送ゲートに負のバイアスを印加する、チップ上に組み込まれた負電荷ポンプ回路と、
前記基板において前記転送ゲートの下に形成されており、ブルーミング制御のための第2導電型の不純物でドーピングされた第1領域と、
前記ゲート絶縁膜と前記基板との間の界面の、前記転送ゲート長のうち前記フォトダイオード側の一部の領域に対応して形成された、しきい値電圧調整及び暗電流抑制のための第1導電型の不純物でドーピングされた第2領域と
を備えたイメージセンサ。 - 前記フォトダイオードが、ピンフォトダイオードであることを特徴とする請求項5に記載のイメージセンサ。
- 前記第1導電型の不純物及び前記第2導電型の不純物が、各々相補的であることを特徴とする請求項5に記載のイメージセンサ。
- 前記第1導電型の不純物及び前記第2導電型の不純物が、各々P型不純物及びN型不純物であることを特徴とする請求項7に記載のイメージセンサ。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2007-0053867 | 2007-06-01 | ||
KR1020070053867A KR100880528B1 (ko) | 2007-06-01 | 2007-06-01 | Cmos 이미지 센서 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008300844A JP2008300844A (ja) | 2008-12-11 |
JP5270964B2 true JP5270964B2 (ja) | 2013-08-21 |
Family
ID=40087127
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008143129A Active JP5270964B2 (ja) | 2007-06-01 | 2008-05-30 | Cmosイメージセンサ及びそのピクセル |
Country Status (3)
Country | Link |
---|---|
US (1) | US7791113B2 (ja) |
JP (1) | JP5270964B2 (ja) |
KR (1) | KR100880528B1 (ja) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4788742B2 (ja) * | 2008-06-27 | 2011-10-05 | ソニー株式会社 | 固体撮像装置及び電子機器 |
US20110032405A1 (en) * | 2009-08-07 | 2011-02-10 | Omnivision Technologies, Inc. | Image sensor with transfer gate having multiple channel sub-regions |
JP2013016675A (ja) * | 2011-07-05 | 2013-01-24 | Sony Corp | 固体撮像装置、電子機器、及び、固体撮像装置の製造方法 |
FR2986906B1 (fr) * | 2012-02-15 | 2015-06-19 | New Imaging Technologies Sas | Structure de pixel actif a transfert de charge ameliore |
US8809925B2 (en) * | 2012-10-11 | 2014-08-19 | Omnivision Technologies, Inc. | Partial buried channel transfer device in image sensors |
US9287319B2 (en) * | 2012-11-16 | 2016-03-15 | Sri International | CMOS multi-pinned (MP) pixel |
FR3018653B1 (fr) | 2014-03-11 | 2016-03-04 | E2V Semiconductors | Procede de capture d'image avec reduction de courant d'obscurite et faible consommation |
KR20150109559A (ko) * | 2014-03-20 | 2015-10-02 | 주식회사 동부하이텍 | 씨모스 이미지 센서 및 그 제조 방법 |
KR102407036B1 (ko) | 2015-11-03 | 2022-06-10 | 삼성전자주식회사 | 이미지 센서 및 이미지 센서의 동작 방법 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5625210A (en) * | 1995-04-13 | 1997-04-29 | Eastman Kodak Company | Active pixel sensor integrated with a pinned photodiode |
JPH11126893A (ja) * | 1997-10-23 | 1999-05-11 | Nikon Corp | 固体撮像素子とその製造方法 |
KR100278285B1 (ko) * | 1998-02-28 | 2001-01-15 | 김영환 | 씨모스 이미지센서 및 그 제조방법 |
JP4200545B2 (ja) * | 1998-06-08 | 2008-12-24 | ソニー株式会社 | 固体撮像素子およびその駆動方法、並びにカメラシステム |
US6657665B1 (en) * | 1998-12-31 | 2003-12-02 | Eastman Kodak Company | Active Pixel Sensor with wired floating diffusions and shared amplifier |
JP3724374B2 (ja) * | 2001-01-15 | 2005-12-07 | ソニー株式会社 | 固体撮像装置及びその駆動方法 |
JP3951879B2 (ja) * | 2002-10-04 | 2007-08-01 | ソニー株式会社 | 固体撮像素子及びその駆動方法 |
JP4117540B2 (ja) * | 2002-10-17 | 2008-07-16 | ソニー株式会社 | 固体撮像素子の制御方法 |
US7709777B2 (en) * | 2003-06-16 | 2010-05-04 | Micron Technology, Inc. | Pumps for CMOS imagers |
KR100761824B1 (ko) * | 2004-06-04 | 2007-09-28 | 삼성전자주식회사 | 이미지 센서 및 그 제조 방법 |
JP4285388B2 (ja) * | 2004-10-25 | 2009-06-24 | セイコーエプソン株式会社 | 固体撮像装置 |
KR100976886B1 (ko) * | 2006-12-22 | 2010-08-18 | 크로스텍 캐피탈, 엘엘씨 | 부동 베이스 판독 개념을 갖는 cmos 이미지 센서 |
-
2007
- 2007-06-01 KR KR1020070053867A patent/KR100880528B1/ko active IP Right Grant
-
2008
- 2008-05-30 US US12/155,181 patent/US7791113B2/en active Active
- 2008-05-30 JP JP2008143129A patent/JP5270964B2/ja active Active
Also Published As
Publication number | Publication date |
---|---|
KR20080105812A (ko) | 2008-12-04 |
JP2008300844A (ja) | 2008-12-11 |
KR100880528B1 (ko) | 2009-01-28 |
US20080296630A1 (en) | 2008-12-04 |
US7791113B2 (en) | 2010-09-07 |
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