JP2015126385A5 - - Google Patents
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- JP2015126385A5 JP2015126385A5 JP2013269673A JP2013269673A JP2015126385A5 JP 2015126385 A5 JP2015126385 A5 JP 2015126385A5 JP 2013269673 A JP2013269673 A JP 2013269673A JP 2013269673 A JP2013269673 A JP 2013269673A JP 2015126385 A5 JP2015126385 A5 JP 2015126385A5
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- JP
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- Prior art keywords
- type transistor
- imaging device
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- potential
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000003384 imaging method Methods 0.000 claims 23
- 230000005669 field effect Effects 0.000 claims 7
- 238000006243 chemical reaction Methods 0.000 claims 6
- 238000000034 method Methods 0.000 claims 4
- 230000002093 peripheral effect Effects 0.000 claims 4
- 125000001475 halogen functional group Chemical group 0.000 claims 2
- 230000003321 amplification Effects 0.000 claims 1
- 239000003990 capacitor Substances 0.000 claims 1
- 239000012535 impurity Substances 0.000 claims 1
- 239000011159 matrix material Substances 0.000 claims 1
- 238000003199 nucleic acid amplification method Methods 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 claims 1
- 239000000758 substrate Substances 0.000 claims 1
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013269673A JP6242211B2 (ja) | 2013-12-26 | 2013-12-26 | 撮像装置および撮像システム |
| US14/579,789 US9247173B2 (en) | 2013-12-26 | 2014-12-22 | Imaging apparatus and imaging system |
| CN201410808890.9A CN104754254B (zh) | 2013-12-26 | 2014-12-23 | 成像设备和成像系统 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013269673A JP6242211B2 (ja) | 2013-12-26 | 2013-12-26 | 撮像装置および撮像システム |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2015126385A JP2015126385A (ja) | 2015-07-06 |
| JP2015126385A5 true JP2015126385A5 (enExample) | 2017-02-02 |
| JP6242211B2 JP6242211B2 (ja) | 2017-12-06 |
Family
ID=53483394
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013269673A Active JP6242211B2 (ja) | 2013-12-26 | 2013-12-26 | 撮像装置および撮像システム |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US9247173B2 (enExample) |
| JP (1) | JP6242211B2 (enExample) |
| CN (1) | CN104754254B (enExample) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9947700B2 (en) * | 2016-02-03 | 2018-04-17 | Semiconductor Energy Laboratory Co., Ltd. | Imaging device and electronic device |
| US10687003B2 (en) | 2016-08-04 | 2020-06-16 | Omnivision Technologies, Inc. | Linear-logarithmic image sensor |
| KR102453118B1 (ko) * | 2017-10-30 | 2022-10-07 | 소니 세미컨덕터 솔루션즈 가부시키가이샤 | 고체 촬상 소자 |
| JP7689307B2 (ja) * | 2020-01-30 | 2025-06-06 | パナソニックIpマネジメント株式会社 | 撮像装置 |
| KR20230100789A (ko) * | 2021-12-28 | 2023-07-06 | 삼성디스플레이 주식회사 | 표시 장치 |
| US20230299109A1 (en) * | 2022-03-18 | 2023-09-21 | Taiwan Semiconductor Manufacturing Company, Ltd. | Stacked image sensors and methods of manufacturing thereof |
| DE102022124675A1 (de) | 2022-09-26 | 2024-03-28 | Ifm Electronic Gmbh | PMD-Sensor mit mehreren Halbleiterebenen |
Family Cites Families (31)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000224495A (ja) * | 1998-11-24 | 2000-08-11 | Canon Inc | 撮像装置及びそれを用いた撮像システム |
| JP3844699B2 (ja) * | 2001-02-19 | 2006-11-15 | イノテック株式会社 | 可変利得アンプ |
| WO2003085964A1 (en) * | 2002-04-04 | 2003-10-16 | Sony Corporation | Solid-state image pickup device |
| JP4581792B2 (ja) * | 2004-07-05 | 2010-11-17 | コニカミノルタホールディングス株式会社 | 固体撮像装置及びこれを備えたカメラ |
| KR100682829B1 (ko) * | 2005-05-18 | 2007-02-15 | 삼성전자주식회사 | 씨모스 이미지 센서의 단위 픽셀, 픽셀 어레이 및 이를포함한 씨모스 이미지 센서 |
| KR100653716B1 (ko) | 2005-07-19 | 2006-12-05 | 삼성전자주식회사 | 이미지 센서 및 그 제조 방법 |
| JP4533821B2 (ja) * | 2005-08-16 | 2010-09-01 | パナソニック株式会社 | Mos型固体撮像装置 |
| CN100511693C (zh) * | 2005-08-31 | 2009-07-08 | 佳能株式会社 | 辐射检测设备、辐射成像设备和辐射成像系统 |
| WO2007083704A1 (ja) * | 2006-01-18 | 2007-07-26 | National University Corporation Shizuoka University | 固体撮像装置及びその画素信号の読みだし方法 |
| JP4442578B2 (ja) * | 2006-03-14 | 2010-03-31 | ソニー株式会社 | Ad変換装置、物理量分布検出装置および撮像装置 |
| CN101118915B (zh) * | 2007-08-08 | 2011-08-10 | 友达光电股份有限公司 | 光感测元件及其制作方法 |
| JP5262180B2 (ja) * | 2008-02-26 | 2013-08-14 | ソニー株式会社 | 固体撮像装置及びカメラ |
| JP2010010740A (ja) * | 2008-06-24 | 2010-01-14 | Sanyo Electric Co Ltd | 撮像装置 |
| JP2010068433A (ja) * | 2008-09-12 | 2010-03-25 | Toshiba Corp | 固体撮像装置およびその駆動方法 |
| KR101543664B1 (ko) * | 2008-12-08 | 2015-08-12 | 삼성전자주식회사 | 픽셀 어레이 및 이를 포함하는 입체 영상 센서 |
| JP2011054832A (ja) | 2009-09-03 | 2011-03-17 | Panasonic Corp | 増幅型固体撮像素子およびその製造方法 |
| JP5531580B2 (ja) * | 2009-11-25 | 2014-06-25 | ソニー株式会社 | 固体撮像装置、および、その製造方法、電子機器 |
| WO2011064924A1 (ja) * | 2009-11-26 | 2011-06-03 | パナソニック株式会社 | 固体撮像装置および撮像装置 |
| JP5700973B2 (ja) * | 2010-08-05 | 2015-04-15 | キヤノン株式会社 | 検出装置及び放射線検出システム |
| JP2012079860A (ja) * | 2010-09-30 | 2012-04-19 | Canon Inc | 検出装置及び放射線検出システム |
| JP6299058B2 (ja) * | 2011-03-02 | 2018-03-28 | ソニー株式会社 | 固体撮像装置、固体撮像装置の製造方法及び電子機器 |
| JP5508356B2 (ja) * | 2011-07-26 | 2014-05-28 | シャープ株式会社 | 固体撮像装置およびその駆動方法、固体撮像装置の製造方法、並びに電子情報機器 |
| JP5999402B2 (ja) * | 2011-08-12 | 2016-09-28 | ソニー株式会社 | 固体撮像素子および製造方法、並びに電子機器 |
| JP2013069864A (ja) * | 2011-09-22 | 2013-04-18 | Canon Inc | 検出装置及び検出システム |
| TWI467751B (zh) * | 2011-12-12 | 2015-01-01 | Sony Corp | A solid-state imaging device, a driving method of a solid-state imaging device, and an electronic device |
| KR102221993B1 (ko) * | 2012-01-23 | 2021-03-02 | 소니 주식회사 | 고체 촬상 장치 및 제조 방법 및 전자 기기 |
| CN104170372B (zh) * | 2012-02-27 | 2019-10-15 | 索尼半导体解决方案公司 | 成像元件和电子设备 |
| CN107340509B (zh) * | 2012-03-09 | 2020-04-14 | 株式会社半导体能源研究所 | 半导体装置的驱动方法 |
| JPWO2013176007A1 (ja) * | 2012-05-25 | 2016-01-12 | ソニー株式会社 | 撮像素子、駆動方法、および電子装置 |
| KR102174650B1 (ko) * | 2013-10-31 | 2020-11-05 | 삼성전자주식회사 | 이미지 센서 |
| JP2015109343A (ja) * | 2013-12-04 | 2015-06-11 | キヤノン株式会社 | 半導体装置の製造方法 |
-
2013
- 2013-12-26 JP JP2013269673A patent/JP6242211B2/ja active Active
-
2014
- 2014-12-22 US US14/579,789 patent/US9247173B2/en active Active
- 2014-12-23 CN CN201410808890.9A patent/CN104754254B/zh active Active
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