JP6222818B2 - 基板処理方法および基板処理装置 - Google Patents

基板処理方法および基板処理装置 Download PDF

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Publication number
JP6222818B2
JP6222818B2 JP2013187627A JP2013187627A JP6222818B2 JP 6222818 B2 JP6222818 B2 JP 6222818B2 JP 2013187627 A JP2013187627 A JP 2013187627A JP 2013187627 A JP2013187627 A JP 2013187627A JP 6222818 B2 JP6222818 B2 JP 6222818B2
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JP
Japan
Prior art keywords
heater
substrate
wafer
liquid
output
Prior art date
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Active
Application number
JP2013187627A
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English (en)
Japanese (ja)
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JP2015056448A (ja
Inventor
世 根来
世 根来
泰彦 永井
泰彦 永井
敬次 岩田
敬次 岩田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Screen Holdings Co Ltd
Original Assignee
Screen Holdings Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Screen Holdings Co Ltd filed Critical Screen Holdings Co Ltd
Priority to JP2013187627A priority Critical patent/JP6222818B2/ja
Priority to TW103126377A priority patent/TWI578401B/zh
Priority to US14/456,007 priority patent/US9555452B2/en
Priority to KR1020140117652A priority patent/KR102088539B1/ko
Priority to CN201410458220.9A priority patent/CN104425325B/zh
Publication of JP2015056448A publication Critical patent/JP2015056448A/ja
Application granted granted Critical
Publication of JP6222818B2 publication Critical patent/JP6222818B2/ja
Active legal-status Critical Current
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0064—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by temperature changes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0064—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by temperature changes
    • B08B7/0071—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by temperature changes by heating

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
JP2013187627A 2013-09-10 2013-09-10 基板処理方法および基板処理装置 Active JP6222818B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2013187627A JP6222818B2 (ja) 2013-09-10 2013-09-10 基板処理方法および基板処理装置
TW103126377A TWI578401B (zh) 2013-09-10 2014-08-01 基板處理方法及基板處理裝置
US14/456,007 US9555452B2 (en) 2013-09-10 2014-08-11 Substrate treatment method and substrate treatment apparatus
KR1020140117652A KR102088539B1 (ko) 2013-09-10 2014-09-04 기판 처리 방법 및 기판 처리 장치
CN201410458220.9A CN104425325B (zh) 2013-09-10 2014-09-10 基板处理方法以及基板处理装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013187627A JP6222818B2 (ja) 2013-09-10 2013-09-10 基板処理方法および基板処理装置

Publications (2)

Publication Number Publication Date
JP2015056448A JP2015056448A (ja) 2015-03-23
JP6222818B2 true JP6222818B2 (ja) 2017-11-01

Family

ID=52624311

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013187627A Active JP6222818B2 (ja) 2013-09-10 2013-09-10 基板処理方法および基板処理装置

Country Status (5)

Country Link
US (1) US9555452B2 (zh)
JP (1) JP6222818B2 (zh)
KR (1) KR102088539B1 (zh)
CN (1) CN104425325B (zh)
TW (1) TWI578401B (zh)

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* Cited by examiner, † Cited by third party
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KR102343226B1 (ko) * 2014-09-04 2021-12-23 삼성전자주식회사 스팟 히터 및 이를 이용한 웨이퍼 클리닝 장치
JP6779701B2 (ja) * 2016-08-05 2020-11-04 東京エレクトロン株式会社 基板処理装置、基板処理方法及び基板処理方法を実行させるプログラムが記録された記憶媒体
TWI700730B (zh) * 2017-01-05 2020-08-01 大陸商盛美半導體設備（上海）股份有限公司 晶圓清洗裝置和方法
KR102030068B1 (ko) 2017-10-12 2019-10-08 세메스 주식회사 기판 처리 장치 및 기판 처리 방법
JP7096004B2 (ja) * 2018-02-07 2022-07-05 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
JP7064905B2 (ja) * 2018-03-05 2022-05-11 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
KR102395805B1 (ko) * 2019-08-26 2022-05-11 세메스 주식회사 기판 처리 장치 및 기판 처리 방법
JP2022041077A (ja) * 2020-08-31 2022-03-11 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
JP2023139604A (ja) * 2022-03-22 2023-10-04 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置

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JPH05121388A (ja) 1991-10-28 1993-05-18 Matsushita Electric Ind Co Ltd 半導体装置の洗浄方法と洗浄装置
JPH07105336B2 (ja) * 1992-08-27 1995-11-13 日本電気株式会社 レジスト現像方法
US6133550A (en) * 1996-03-22 2000-10-17 Sandia Corporation Method and apparatus for thermal processing of semiconductor substrates
JP4098908B2 (ja) * 1999-01-29 2008-06-11 大日本スクリーン製造株式会社 基板処理装置及び基板処理方法
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JP4699283B2 (ja) * 2006-05-23 2011-06-08 東京エレクトロン株式会社 熱処理板の温度制御方法、プログラム及び熱処理板の温度制御装置
JP4795854B2 (ja) 2006-06-05 2011-10-19 大日本スクリーン製造株式会社 基板処理方法および基板処理装置
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US8709165B2 (en) 2010-12-03 2014-04-29 Lam Research Ag Method and apparatus for surface treatment using inorganic acid and ozone
JP5474840B2 (ja) 2011-01-25 2014-04-16 東京エレクトロン株式会社 液処理装置および液処理方法
US20120260947A1 (en) * 2011-04-12 2012-10-18 Satoshi Kaneko Substrate cleaning apparatus, substrate cleaning method, and computer-readable recording medium having substrate cleaning program recorded therein
WO2013031390A1 (ja) 2011-08-26 2013-03-07 東京エレクトロン株式会社 液処理装置及び液処理方法
CN103295936B (zh) * 2012-02-29 2016-01-13 斯克林集团公司 基板处理装置及基板处理方法
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JP6222817B2 (ja) * 2013-09-10 2017-11-01 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置

Also Published As

Publication number Publication date
CN104425325B (zh) 2017-12-08
TW201513227A (zh) 2015-04-01
JP2015056448A (ja) 2015-03-23
US20150068557A1 (en) 2015-03-12
US9555452B2 (en) 2017-01-31
CN104425325A (zh) 2015-03-18
KR20150029565A (ko) 2015-03-18
KR102088539B1 (ko) 2020-03-12
TWI578401B (zh) 2017-04-11

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