JP6204103B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP6204103B2
JP6204103B2 JP2013155233A JP2013155233A JP6204103B2 JP 6204103 B2 JP6204103 B2 JP 6204103B2 JP 2013155233 A JP2013155233 A JP 2013155233A JP 2013155233 A JP2013155233 A JP 2013155233A JP 6204103 B2 JP6204103 B2 JP 6204103B2
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Japan
Prior art keywords
oxide semiconductor
film
semiconductor film
transistor
oxide
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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JP2013155233A
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Japanese (ja)
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JP2014042013A5 (enExample
JP2014042013A (ja
Inventor
鶴目　卓也
卓也 鶴目
英臣 須澤
英臣 須澤
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2013155233A priority Critical patent/JP6204103B2/ja
Publication of JP2014042013A publication Critical patent/JP2014042013A/ja
Publication of JP2014042013A5 publication Critical patent/JP2014042013A5/ja
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Publication of JP6204103B2 publication Critical patent/JP6204103B2/ja
Expired - Fee Related legal-status Critical Current
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile

Landscapes

  • Thin Film Transistor (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Memories (AREA)
JP2013155233A 2012-07-27 2013-07-26 半導体装置 Expired - Fee Related JP6204103B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2013155233A JP6204103B2 (ja) 2012-07-27 2013-07-26 半導体装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2012166568 2012-07-27
JP2012166568 2012-07-27
JP2013155233A JP6204103B2 (ja) 2012-07-27 2013-07-26 半導体装置

Publications (3)

Publication Number Publication Date
JP2014042013A JP2014042013A (ja) 2014-03-06
JP2014042013A5 JP2014042013A5 (enExample) 2016-09-01
JP6204103B2 true JP6204103B2 (ja) 2017-09-27

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JP2013155233A Expired - Fee Related JP6204103B2 (ja) 2012-07-27 2013-07-26 半導体装置

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US (1) US20140027762A1 (enExample)
JP (1) JP6204103B2 (enExample)

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JP6345023B2 (ja) * 2013-08-07 2018-06-20 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
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TWI646690B (zh) 2013-09-13 2019-01-01 半導體能源研究所股份有限公司 半導體裝置及其製造方法
JP6386323B2 (ja) 2013-10-04 2018-09-05 株式会社半導体エネルギー研究所 半導体装置
TWI721409B (zh) 2013-12-19 2021-03-11 日商半導體能源研究所股份有限公司 半導體裝置
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TWI657488B (zh) * 2014-03-20 2019-04-21 日商半導體能源研究所股份有限公司 半導體裝置、具有該半導體裝置的顯示裝置、具有該顯示裝置的顯示模組以及具有該半導體裝置、該顯示裝置和該顯示模組的電子裝置
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CN107406966B (zh) 2015-03-03 2020-11-20 株式会社半导体能源研究所 氧化物半导体膜、包括该氧化物半导体膜的半导体装置以及包括该半导体装置的显示装置
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KR102330605B1 (ko) * 2016-06-22 2021-11-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
TW201813095A (zh) * 2016-07-11 2018-04-01 半導體能源硏究所股份有限公司 半導體裝置
KR102384624B1 (ko) * 2016-10-21 2022-04-11 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
WO2018220491A1 (ja) * 2017-06-02 2018-12-06 株式会社半導体エネルギー研究所 半導体装置、電子部品及び電子機器
JPWO2018224904A1 (ja) 2017-06-05 2020-05-21 株式会社半導体エネルギー研究所 半導体装置、および半導体装置の作製方法
JP7190729B2 (ja) 2018-08-31 2022-12-16 三国電子有限会社 キャリア注入量制御電極を有する有機エレクトロルミネセンス素子
JP7246681B2 (ja) * 2018-09-26 2023-03-28 三国電子有限会社 トランジスタ及びトランジスタの製造方法、並びにトランジスタを含む表示装置
CN110600381A (zh) * 2019-08-26 2019-12-20 深圳市华星光电半导体显示技术有限公司 阵列基板和阵列基板的制备方法
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