JP6177665B2 - 軟質かつコンディショニング可能なケミカルメカニカル研磨パッド - Google Patents

軟質かつコンディショニング可能なケミカルメカニカル研磨パッド Download PDF

Info

Publication number
JP6177665B2
JP6177665B2 JP2013226447A JP2013226447A JP6177665B2 JP 6177665 B2 JP6177665 B2 JP 6177665B2 JP 2013226447 A JP2013226447 A JP 2013226447A JP 2013226447 A JP2013226447 A JP 2013226447A JP 6177665 B2 JP6177665 B2 JP 6177665B2
Authority
JP
Japan
Prior art keywords
curing agent
molecular weight
chemical mechanical
polishing pad
amine
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2013226447A
Other languages
English (en)
Japanese (ja)
Other versions
JP2014097567A5 (enExample
JP2014097567A (ja
Inventor
バイニャン・チャン
デービッド・ビー・ジェームズ
ジェームズ・ムルナン
フェンジィ・イエ
マーティー・ディグルート
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
DuPont Electronic Materials Holding Inc
Original Assignee
Rohm and Haas Electronic Materials CMP Holdings Inc
DuPont Electronic Materials Holding Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=50483296&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=JP6177665(B2) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Rohm and Haas Electronic Materials CMP Holdings Inc, DuPont Electronic Materials Holding Inc filed Critical Rohm and Haas Electronic Materials CMP Holdings Inc
Publication of JP2014097567A publication Critical patent/JP2014097567A/ja
Publication of JP2014097567A5 publication Critical patent/JP2014097567A5/ja
Application granted granted Critical
Publication of JP6177665B2 publication Critical patent/JP6177665B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D3/00—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
    • B24D3/02—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent
    • B24D3/20—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent and being essentially organic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D3/00—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
    • B24D3/34—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents characterised by additives enhancing special physical properties, e.g. wear resistance, electric conductivity, self-cleaning properties
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G18/00—Polymeric products of isocyanates or isothiocyanates
    • C08G18/06—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen
    • C08G18/08—Processes
    • C08G18/10—Prepolymer processes involving reaction of isocyanates or isothiocyanates with compounds having active hydrogen in a first reaction step
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G18/00—Polymeric products of isocyanates or isothiocyanates
    • C08G18/06—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen
    • C08G18/28—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen characterised by the compounds used containing active hydrogen
    • C08G18/30—Low-molecular-weight compounds
    • C08G18/32—Polyhydroxy compounds; Polyamines; Hydroxyamines
    • C08G18/3271—Hydroxyamines
    • C08G18/3278—Hydroxyamines containing at least three hydroxy groups
    • C08G18/3281—Hydroxyamines containing at least three hydroxy groups containing three hydroxy groups
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices

Landscapes

  • Mechanical Engineering (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Polyurethanes Or Polyureas (AREA)
  • Grinding-Machine Dressing And Accessory Apparatuses (AREA)
  • Manufacture Of Macromolecular Shaped Articles (AREA)
JP2013226447A 2012-11-01 2013-10-31 軟質かつコンディショニング可能なケミカルメカニカル研磨パッド Active JP6177665B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/666,514 US9144880B2 (en) 2012-11-01 2012-11-01 Soft and conditionable chemical mechanical polishing pad
US13/666,514 2012-11-01

Publications (3)

Publication Number Publication Date
JP2014097567A JP2014097567A (ja) 2014-05-29
JP2014097567A5 JP2014097567A5 (enExample) 2016-12-01
JP6177665B2 true JP6177665B2 (ja) 2017-08-09

Family

ID=50483296

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013226447A Active JP6177665B2 (ja) 2012-11-01 2013-10-31 軟質かつコンディショニング可能なケミカルメカニカル研磨パッド

Country Status (7)

Country Link
US (1) US9144880B2 (enExample)
JP (1) JP6177665B2 (enExample)
KR (1) KR102117902B1 (enExample)
CN (1) CN103802018B (enExample)
DE (1) DE102013018258A1 (enExample)
FR (1) FR2997331B1 (enExample)
TW (1) TWI597355B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014233834A (ja) * 2013-05-31 2014-12-15 ローム アンド ハース エレクトロニック マテリアルズ シーエムピー ホウルディングス インコーポレイテッド 軟質かつコンディショニング可能な化学機械ウィンドウ研磨パッド

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8980749B1 (en) * 2013-10-24 2015-03-17 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method for chemical mechanical polishing silicon wafers
US9216489B2 (en) * 2014-03-28 2015-12-22 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing pad with endpoint detection window
US20150306731A1 (en) * 2014-04-25 2015-10-29 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing pad
US9333620B2 (en) * 2014-04-29 2016-05-10 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing pad with clear endpoint detection window
US9259821B2 (en) * 2014-06-25 2016-02-16 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing layer formulation with conditioning tolerance
US20150375361A1 (en) * 2014-06-25 2015-12-31 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing method
US9586304B2 (en) * 2014-12-19 2017-03-07 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Controlled-expansion CMP PAD casting method
US10092998B2 (en) * 2015-06-26 2018-10-09 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method of making composite polishing layer for chemical mechanical polishing pad
US9776300B2 (en) * 2015-06-26 2017-10-03 Rohm And Haas Electronic Materials Cmp Holdings Inc. Chemical mechanical polishing pad and method of making same
EP3352944B1 (en) * 2015-09-25 2022-10-26 CMC Materials, Inc. Polyurethane cmp pads having a high modulus ratio
US9484212B1 (en) * 2015-10-30 2016-11-01 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing method
US10208154B2 (en) * 2016-11-30 2019-02-19 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Formulations for chemical mechanical polishing pads and CMP pads made therewith
US20180281149A1 (en) 2017-03-31 2018-10-04 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing pad
CN107553313B (zh) * 2017-08-31 2019-12-31 湖北鼎龙控股股份有限公司 一种抛光垫、聚氨酯抛光层及其制备方法
US11179822B2 (en) 2017-08-31 2021-11-23 Hubei Dinghui Microelectronics Materials Co., Ltd Polyurethane polishing layer, polishing pad comprising polishing layer, method for preparing polishing layer and method for planarizing material
US10464187B2 (en) 2017-12-01 2019-11-05 Rohm And Haas Electronic Materials Cmp Holdings, Inc. High removal rate chemical mechanical polishing pads from amine initiated polyol containing curatives
CN109015342B (zh) * 2018-03-06 2020-08-25 湖北鼎汇微电子材料有限公司 一种化学机械抛光垫及其平坦化基材的方法
TWI735101B (zh) * 2018-12-26 2021-08-01 南韓商Ｓｋｃ索密思股份有限公司 用於研磨墊之組成物、研磨墊及用於製備其之方法
US20210069860A1 (en) * 2019-09-11 2021-03-11 Applied Materials, Inc. Compositions and Methods of Additive Manufacturing of Polishing Pads
US12006442B2 (en) 2019-09-11 2024-06-11 Applied Materials, Inc. Additive manufacturing of polishing pads
KR102287235B1 (ko) 2019-10-30 2021-08-06 에스케이씨솔믹스 주식회사 가교도가 조절된 연마패드 및 이의 제조방법
EP3967452B1 (en) * 2020-09-07 2026-06-10 Enpulse Co., Ltd. Polishing pad and method of fabricating semiconductor device using the same
CN113146488B (zh) * 2021-05-18 2022-06-17 广东伟艺抛磨材料有限公司 一种水磨环保抛光轮及其制造方法
KR102561824B1 (ko) * 2021-06-02 2023-07-31 에스케이엔펄스 주식회사 연마패드 및 이를 이용한 반도체 소자의 제조방법
US12544958B2 (en) 2022-06-02 2026-02-10 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method of making low specific gravity polishing pads
US12528152B2 (en) 2022-06-02 2026-01-20 Rohm And Haas Electronic Materials Cmp Holdings, Inc. CMP pad having ultra expanded polymer microspheres
US12654280B2 (en) * 2022-06-02 2026-06-16 DuPont Electronic Materials Holding, Inc. CMP pad having polishing layer of low specific gravity
CN115431175B (zh) * 2022-09-16 2024-03-22 湖北鼎汇微电子材料有限公司 一种自修整抛光垫及其制备方法和应用
CN119734199B (zh) * 2024-09-13 2026-02-17 湖北鼎汇微电子材料有限公司 抛光层，抛光垫及抛光方法

Family Cites Families (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5245790A (en) * 1992-02-14 1993-09-21 Lsi Logic Corporation Ultrasonic energy enhanced chemi-mechanical polishing of silicon wafers
MY114512A (en) 1992-08-19 2002-11-30 Rodel Inc Polymeric substrate with polymeric microelements
US6117000A (en) * 1998-07-10 2000-09-12 Cabot Corporation Polishing pad for a semiconductor substrate
JP3925041B2 (ja) 2000-05-31 2007-06-06 Ｊｓｒ株式会社 研磨パッド用組成物及びこれを用いた研磨パッド
JP3826702B2 (ja) 2000-10-24 2006-09-27 Ｊｓｒ株式会社 研磨パッド用組成物及びこれを用いた研磨パッド
CN100592474C (zh) 2001-11-13 2010-02-24 东洋橡胶工业株式会社 研磨垫及其制造方法
JP4039214B2 (ja) 2002-11-05 2008-01-30 Ｊｓｒ株式会社 研磨パッド
JP2005029617A (ja) * 2003-07-08 2005-02-03 Bridgestone Corp 難燃性微細セル軟質ポリウレタンフォーム
US7704125B2 (en) 2003-03-24 2010-04-27 Nexplanar Corporation Customized polishing pads for CMP and methods of fabrication and use thereof
US20040224622A1 (en) 2003-04-15 2004-11-11 Jsr Corporation Polishing pad and production method thereof
US6943202B2 (en) * 2003-07-29 2005-09-13 Crompton Corporation Radiation-curable polyurethane
US7074115B2 (en) 2003-10-09 2006-07-11 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Polishing pad
US20050171224A1 (en) * 2004-02-03 2005-08-04 Kulp Mary J. Polyurethane polishing pad
JP4475404B2 (ja) 2004-10-14 2010-06-09 Ｊｓｒ株式会社 研磨パッド
SG162797A1 (en) 2005-07-15 2010-07-29 Toyo Tire & Rubber Co Layered sheets and processes for producing the same
KR101181885B1 (ko) 2006-09-08 2012-09-11 도요 고무 고교 가부시키가이샤 연마 패드
CN102152232B (zh) 2007-01-15 2013-06-26 东洋橡胶工业株式会社 研磨垫及其制造方法
JP4261586B2 (ja) * 2007-01-15 2009-04-30 東洋ゴム工業株式会社 研磨パッドの製造方法
US7569268B2 (en) * 2007-01-29 2009-08-04 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing pad
TWI444248B (zh) * 2007-08-15 2014-07-11 羅門哈斯電子材料Ｃｍｐ控股公司 化學機械研磨方法
US20090062414A1 (en) 2007-08-28 2009-03-05 David Picheng Huang System and method for producing damping polyurethane CMP pads
US8052507B2 (en) 2007-11-20 2011-11-08 Praxair Technology, Inc. Damping polyurethane CMP pads with microfillers
JP4593643B2 (ja) 2008-03-12 2010-12-08 東洋ゴム工業株式会社 研磨パッド
JP4897082B2 (ja) 2008-04-25 2012-03-14 トーヨーポリマー株式会社 ポリウレタン発泡体及び研磨パッド
US20100035529A1 (en) * 2008-08-05 2010-02-11 Mary Jo Kulp Chemical mechanical polishing pad
US8118644B2 (en) * 2008-10-16 2012-02-21 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing pad having integral identification feature
JP5393434B2 (ja) 2008-12-26 2014-01-22 東洋ゴム工業株式会社 研磨パッド及びその製造方法
JP5276502B2 (ja) * 2009-04-03 2013-08-28 東洋ゴム工業株式会社 研磨パッド及びその製造方法
US8697239B2 (en) * 2009-07-24 2014-04-15 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Multi-functional polishing pad
US8551201B2 (en) 2009-08-07 2013-10-08 Praxair S.T. Technology, Inc. Polyurethane composition for CMP pads and method of manufacturing same
US9156124B2 (en) 2010-07-08 2015-10-13 Nexplanar Corporation Soft polishing pad for polishing a semiconductor substrate

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014233834A (ja) * 2013-05-31 2014-12-15 ローム アンド ハース エレクトロニック マテリアルズ シーエムピー ホウルディングス インコーポレイテッド 軟質かつコンディショニング可能な化学機械ウィンドウ研磨パッド

Also Published As

Publication number Publication date
FR2997331B1 (fr) 2016-12-23
TW201433628A (zh) 2014-09-01
KR20140056116A (ko) 2014-05-09
FR2997331A1 (fr) 2014-05-02
CN103802018B (zh) 2016-09-21
JP2014097567A (ja) 2014-05-29
US9144880B2 (en) 2015-09-29
TWI597355B (zh) 2017-09-01
CN103802018A (zh) 2014-05-21
US20140120809A1 (en) 2014-05-01
KR102117902B1 (ko) 2020-06-02
DE102013018258A1 (de) 2014-05-08

Similar Documents

Publication Publication Date Title
CN103802018B (zh) 柔软可修整的化学机械抛光垫
JP6290004B2 (ja) 軟質かつコンディショニング可能な化学機械ウィンドウ研磨パッド
US12491604B2 (en) Chemical mechanical polishing pad
JP6463618B2 (ja) シリコンウェーハを化学機械研磨する方法
JP6367611B2 (ja) 軟質かつコンディショニング可能な研磨層を有する多層化学機械研磨パッドスタック
JP6563706B2 (ja) コンディショニング許容度を有する化学機械研磨層組成物
JP6334266B2 (ja) 軟質かつコンディショニング可能な化学機械研磨パッドスタック
JP6783562B2 (ja) ケミカルメカニカル研磨パッドのための複合研磨層の製造方法
JP2015189003A (ja) 軟質かつコンディショニング可能なウィンドウ付きケミカルメカニカル研磨パッド
JP2017013224A (ja) ケミカルメカニカル研磨パッドのための研磨層の製造方法
JP2017052078A (ja) ケミカルメカニカル研磨パッド及び同研磨パッドの製造方法
JP6773465B2 (ja) ケミカルメカニカル研磨パッド複合研磨層調合物

Legal Events

Date Code Title Description
RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20150303

RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20160222

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20161014

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20161014

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20170627

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20170629

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20170712

R150 Certificate of patent or registration of utility model

Ref document number: 6177665

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

S533 Written request for registration of change of name

Free format text: JAPANESE INTERMEDIATE CODE: R313533

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350