JP6783562B2 - ケミカルメカニカル研磨パッドのための複合研磨層の製造方法 - Google Patents
ケミカルメカニカル研磨パッドのための複合研磨層の製造方法 Download PDFInfo
- Publication number
- JP6783562B2 JP6783562B2 JP2016125340A JP2016125340A JP6783562B2 JP 6783562 B2 JP6783562 B2 JP 6783562B2 JP 2016125340 A JP2016125340 A JP 2016125340A JP 2016125340 A JP2016125340 A JP 2016125340A JP 6783562 B2 JP6783562 B2 JP 6783562B2
- Authority
- JP
- Japan
- Prior art keywords
- cylindrical chamber
- polishing
- internal cylindrical
- polishing layer
- supply port
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000005498 polishing Methods 0.000 title claims description 351
- 239000000126 substance Substances 0.000 title claims description 106
- 239000002131 composite material Substances 0.000 title claims description 103
- 238000000034 method Methods 0.000 title claims description 94
- 238000004519 manufacturing process Methods 0.000 title description 5
- 239000007788 liquid Substances 0.000 claims description 189
- 229920000642 polymer Polymers 0.000 claims description 69
- 229920005862 polyol Polymers 0.000 claims description 69
- 150000003077 polyols Chemical class 0.000 claims description 68
- 239000000203 mixture Substances 0.000 claims description 54
- 230000000737 periodic effect Effects 0.000 claims description 48
- -1 alcohol amines Chemical class 0.000 claims description 35
- 239000012948 isocyanate Substances 0.000 claims description 34
- 150000002513 isocyanates Chemical class 0.000 claims description 23
- 239000000758 substrate Substances 0.000 claims description 18
- 239000003795 chemical substances by application Substances 0.000 claims description 15
- 229920000768 polyamine Polymers 0.000 claims description 14
- 239000007795 chemical reaction product Substances 0.000 claims description 8
- 238000002156 mixing Methods 0.000 claims description 8
- 230000002093 peripheral effect Effects 0.000 claims description 8
- 239000002861 polymer material Substances 0.000 claims description 8
- JOYRKODLDBILNP-UHFFFAOYSA-N urethane group Chemical group NC(=O)OCC JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 claims description 4
- 238000003754 machining Methods 0.000 claims 2
- 239000007789 gas Substances 0.000 description 71
- 125000001261 isocyanato group Chemical group *N=C=O 0.000 description 21
- 235000012431 wafers Nutrition 0.000 description 20
- 150000003673 urethanes Chemical group 0.000 description 19
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 17
- 150000001412 amines Chemical class 0.000 description 16
- 239000000463 material Substances 0.000 description 16
- 229920000909 polytetrahydrofuran Polymers 0.000 description 12
- 229920001451 polypropylene glycol Polymers 0.000 description 11
- UPMLOUAZCHDJJD-UHFFFAOYSA-N 4,4'-Diphenylmethane Diisocyanate Chemical compound C1=CC(N=C=O)=CC=C1CC1=CC=C(N=C=O)C=C1 UPMLOUAZCHDJJD-UHFFFAOYSA-N 0.000 description 9
- 239000000853 adhesive Substances 0.000 description 8
- 230000001070 adhesive effect Effects 0.000 description 8
- 239000003570 air Substances 0.000 description 8
- 238000013461 design Methods 0.000 description 8
- 229920002635 polyurethane Polymers 0.000 description 8
- YPFDHNVEDLHUCE-UHFFFAOYSA-N propane-1,3-diol Chemical compound OCCCO YPFDHNVEDLHUCE-UHFFFAOYSA-N 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 8
- 239000003054 catalyst Substances 0.000 description 7
- 229920001577 copolymer Polymers 0.000 description 7
- 238000001514 detection method Methods 0.000 description 7
- 150000002009 diols Chemical class 0.000 description 7
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 6
- 229910052757 nitrogen Inorganic materials 0.000 description 6
- 239000004814 polyurethane Substances 0.000 description 6
- DVKJHBMWWAPEIU-UHFFFAOYSA-N toluene 2,4-diisocyanate Chemical compound CC1=CC=C(N=C=O)C=C1N=C=O DVKJHBMWWAPEIU-UHFFFAOYSA-N 0.000 description 6
- 239000004831 Hot glue Substances 0.000 description 5
- WERYXYBDKMZEQL-UHFFFAOYSA-N butane-1,4-diol Chemical compound OCCCCO WERYXYBDKMZEQL-UHFFFAOYSA-N 0.000 description 5
- 125000005442 diisocyanate group Chemical group 0.000 description 5
- 238000002474 experimental method Methods 0.000 description 5
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 5
- PUPZLCDOIYMWBV-UHFFFAOYSA-N (+/-)-1,3-Butanediol Chemical compound CC(O)CCO PUPZLCDOIYMWBV-UHFFFAOYSA-N 0.000 description 4
- ALYNCZNDIQEVRV-UHFFFAOYSA-N 4-aminobenzoic acid Chemical compound NC1=CC=C(C(O)=O)C=C1 ALYNCZNDIQEVRV-UHFFFAOYSA-N 0.000 description 4
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 4
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000011161 development Methods 0.000 description 4
- 229920001610 polycaprolactone Polymers 0.000 description 4
- 239000004632 polycaprolactone Substances 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 239000000047 product Substances 0.000 description 4
- 239000002002 slurry Substances 0.000 description 4
- 239000004094 surface-active agent Substances 0.000 description 4
- 239000004721 Polyphenylene oxide Substances 0.000 description 3
- 125000003118 aryl group Chemical group 0.000 description 3
- BMRWNKZVCUKKSR-UHFFFAOYSA-N butane-1,2-diol Chemical compound CCC(O)CO BMRWNKZVCUKKSR-UHFFFAOYSA-N 0.000 description 3
- 238000005520 cutting process Methods 0.000 description 3
- 229910003460 diamond Inorganic materials 0.000 description 3
- 239000010432 diamond Substances 0.000 description 3
- 238000001879 gelation Methods 0.000 description 3
- 238000003801 milling Methods 0.000 description 3
- 238000007517 polishing process Methods 0.000 description 3
- 229920000570 polyether Polymers 0.000 description 3
- PAALZGOZEUHCET-UHFFFAOYSA-N 1,4-dioxecane-5,10-dione Chemical compound O=C1CCCCC(=O)OCCO1 PAALZGOZEUHCET-UHFFFAOYSA-N 0.000 description 2
- AXKZIDYFAMKWSA-UHFFFAOYSA-N 1,6-dioxacyclododecane-7,12-dione Chemical compound O=C1CCCCC(=O)OCCCCO1 AXKZIDYFAMKWSA-UHFFFAOYSA-N 0.000 description 2
- PISLZQACAJMAIO-UHFFFAOYSA-N 2,4-diethyl-6-methylbenzene-1,3-diamine Chemical compound CCC1=CC(C)=C(N)C(CC)=C1N PISLZQACAJMAIO-UHFFFAOYSA-N 0.000 description 2
- BSYVFGQQLJNJJG-UHFFFAOYSA-N 2-[2-(2-aminophenyl)sulfanylethylsulfanyl]aniline Chemical compound NC1=CC=CC=C1SCCSC1=CC=CC=C1N BSYVFGQQLJNJJG-UHFFFAOYSA-N 0.000 description 2
- LCZVSXRMYJUNFX-UHFFFAOYSA-N 2-[2-(2-hydroxypropoxy)propoxy]propan-1-ol Chemical compound CC(O)COC(C)COC(C)CO LCZVSXRMYJUNFX-UHFFFAOYSA-N 0.000 description 2
- QWGRWMMWNDWRQN-UHFFFAOYSA-N 2-methylpropane-1,3-diol Chemical compound OCC(C)CO QWGRWMMWNDWRQN-UHFFFAOYSA-N 0.000 description 2
- SXFJDZNJHVPHPH-UHFFFAOYSA-N 3-methylpentane-1,5-diol Chemical compound OCCC(C)CCO SXFJDZNJHVPHPH-UHFFFAOYSA-N 0.000 description 2
- YBRVSVVVWCFQMG-UHFFFAOYSA-N 4,4'-diaminodiphenylmethane Chemical compound C1=CC(N)=CC=C1CC1=CC=C(N)C=C1 YBRVSVVVWCFQMG-UHFFFAOYSA-N 0.000 description 2
- AOFIWCXMXPVSAZ-UHFFFAOYSA-N 4-methyl-2,6-bis(methylsulfanyl)benzene-1,3-diamine Chemical compound CSC1=CC(C)=C(N)C(SC)=C1N AOFIWCXMXPVSAZ-UHFFFAOYSA-N 0.000 description 2
- YJIHNAUJGMTCFJ-UHFFFAOYSA-N 4-methyl-6-(2-methylbutan-2-yl)benzene-1,3-diamine Chemical compound CCC(C)(C)C1=CC(C)=C(N)C=C1N YJIHNAUJGMTCFJ-UHFFFAOYSA-N 0.000 description 2
- DVPHIKHMYFQLKF-UHFFFAOYSA-N 4-tert-butyl-2-methylbenzene-1,3-diamine Chemical compound CC1=C(N)C=CC(C(C)(C)C)=C1N DVPHIKHMYFQLKF-UHFFFAOYSA-N 0.000 description 2
- HLDUVPFXLWEZOG-UHFFFAOYSA-N 4-tert-butyl-6-methylbenzene-1,3-diamine Chemical compound CC1=CC(C(C)(C)C)=C(N)C=C1N HLDUVPFXLWEZOG-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 239000004604 Blowing Agent Substances 0.000 description 2
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 2
- ALQSHHUCVQOPAS-UHFFFAOYSA-N Pentane-1,5-diol Chemical compound OCCCCCO ALQSHHUCVQOPAS-UHFFFAOYSA-N 0.000 description 2
- 229920002176 Pluracol® Polymers 0.000 description 2
- 239000004743 Polypropylene Substances 0.000 description 2
- 239000004820 Pressure-sensitive adhesive Substances 0.000 description 2
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 description 2
- SLINHMUFWFWBMU-UHFFFAOYSA-N Triisopropanolamine Chemical compound CC(O)CN(CC(C)O)CC(C)O SLINHMUFWFWBMU-UHFFFAOYSA-N 0.000 description 2
- 229920013701 VORANOL™ Polymers 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- CDQSJQSWAWPGKG-UHFFFAOYSA-N butane-1,1-diol Chemical compound CCCC(O)O CDQSJQSWAWPGKG-UHFFFAOYSA-N 0.000 description 2
- 229910002092 carbon dioxide Inorganic materials 0.000 description 2
- 239000001569 carbon dioxide Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 230000001143 conditioned effect Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- SZXQTJUDPRGNJN-UHFFFAOYSA-N dipropylene glycol Chemical compound OCCCOCCCO SZXQTJUDPRGNJN-UHFFFAOYSA-N 0.000 description 2
- 238000007599 discharging Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000012776 electronic material Substances 0.000 description 2
- 150000002148 esters Chemical class 0.000 description 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N ether Substances CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- 239000006260 foam Substances 0.000 description 2
- 239000004088 foaming agent Substances 0.000 description 2
- 230000005484 gravity Effects 0.000 description 2
- XXMIOPMDWAUFGU-UHFFFAOYSA-N hexane-1,6-diol Chemical compound OCCCCCCO XXMIOPMDWAUFGU-UHFFFAOYSA-N 0.000 description 2
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 2
- 238000011065 in-situ storage Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 230000001788 irregular Effects 0.000 description 2
- IQPQWNKOIGAROB-UHFFFAOYSA-N isocyanate group Chemical group [N-]=C=O IQPQWNKOIGAROB-UHFFFAOYSA-N 0.000 description 2
- 239000011344 liquid material Substances 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 239000000178 monomer Substances 0.000 description 2
- SLCVBVWXLSEKPL-UHFFFAOYSA-N neopentyl glycol Chemical compound OCC(C)(C)CO SLCVBVWXLSEKPL-UHFFFAOYSA-N 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 229920002239 polyacrylonitrile Polymers 0.000 description 2
- 229920000515 polycarbonate Polymers 0.000 description 2
- 239000004417 polycarbonate Substances 0.000 description 2
- 229920005906 polyester polyol Polymers 0.000 description 2
- 229920001155 polypropylene Polymers 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 238000007655 standard test method Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 239000012974 tin catalyst Substances 0.000 description 2
- IMNIMPAHZVJRPE-UHFFFAOYSA-N triethylenediamine Chemical compound C1CN2CCN1CC2 IMNIMPAHZVJRPE-UHFFFAOYSA-N 0.000 description 2
- SEPPVOUBHWNCAW-FNORWQNLSA-N (E)-4-oxonon-2-enal Chemical compound CCCCCC(=O)\C=C\C=O SEPPVOUBHWNCAW-FNORWQNLSA-N 0.000 description 1
- ALQLPWJFHRMHIU-UHFFFAOYSA-N 1,4-diisocyanatobenzene Chemical compound O=C=NC1=CC=C(N=C=O)C=C1 ALQLPWJFHRMHIU-UHFFFAOYSA-N 0.000 description 1
- CWKVFRNCODQPDB-UHFFFAOYSA-N 1-(2-aminoethylamino)propan-2-ol Chemical compound CC(O)CNCCN CWKVFRNCODQPDB-UHFFFAOYSA-N 0.000 description 1
- OXYOEODRABYZAN-UHFFFAOYSA-N 2-hexylbenzene-1,3-diamine Chemical compound C(CCCCC)C1=C(C=CC=C1N)N OXYOEODRABYZAN-UHFFFAOYSA-N 0.000 description 1
- WABOBVQONKAELR-UHFFFAOYSA-N 2-methyl-4-(2-methylbutan-2-yl)benzene-1,3-diamine Chemical compound CCC(C)(C)C1=CC=C(N)C(C)=C1N WABOBVQONKAELR-UHFFFAOYSA-N 0.000 description 1
- VIOMIGLBMQVNLY-UHFFFAOYSA-N 4-[(4-amino-2-chloro-3,5-diethylphenyl)methyl]-3-chloro-2,6-diethylaniline Chemical compound CCC1=C(N)C(CC)=CC(CC=2C(=C(CC)C(N)=C(CC)C=2)Cl)=C1Cl VIOMIGLBMQVNLY-UHFFFAOYSA-N 0.000 description 1
- CNPURSDMOWDNOQ-UHFFFAOYSA-N 4-methoxy-7h-pyrrolo[2,3-d]pyrimidin-2-amine Chemical compound COC1=NC(N)=NC2=C1C=CN2 CNPURSDMOWDNOQ-UHFFFAOYSA-N 0.000 description 1
- LLBZPESJRQGYMB-UHFFFAOYSA-N 4-one Natural products O1C(C(=O)CC)CC(C)C11C2(C)CCC(C3(C)C(C(C)(CO)C(OC4C(C(O)C(O)C(COC5C(C(O)C(O)CO5)OC5C(C(OC6C(C(O)C(O)C(CO)O6)O)C(O)C(CO)O5)OC5C(C(O)C(O)C(C)O5)O)O4)O)CC3)CC3)=C3C2(C)CC1 LLBZPESJRQGYMB-UHFFFAOYSA-N 0.000 description 1
- KXDHJXZQYSOELW-UHFFFAOYSA-M Carbamate Chemical compound NC([O-])=O KXDHJXZQYSOELW-UHFFFAOYSA-M 0.000 description 1
- 239000005057 Hexamethylene diisocyanate Substances 0.000 description 1
- 239000005058 Isophorone diisocyanate Substances 0.000 description 1
- OMRDSWJXRLDPBB-UHFFFAOYSA-N N=C=O.N=C=O.C1CCCCC1 Chemical compound N=C=O.N=C=O.C1CCCCC1 OMRDSWJXRLDPBB-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 1
- NSOXQYCFHDMMGV-UHFFFAOYSA-N Tetrakis(2-hydroxypropyl)ethylenediamine Chemical compound CC(O)CN(CC(C)O)CCN(CC(C)O)CC(C)O NSOXQYCFHDMMGV-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 230000001154 acute effect Effects 0.000 description 1
- 125000001931 aliphatic group Chemical group 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 150000004982 aromatic amines Chemical class 0.000 description 1
- 150000004984 aromatic diamines Chemical class 0.000 description 1
- HIFVAOIJYDXIJG-UHFFFAOYSA-N benzylbenzene;isocyanic acid Chemical class N=C=O.N=C=O.C=1C=CC=CC=1CC1=CC=CC=C1 HIFVAOIJYDXIJG-UHFFFAOYSA-N 0.000 description 1
- POAHJTISJZSSFK-UHFFFAOYSA-N chloro(phenyl)methanediamine Chemical compound NC(N)(Cl)C1=CC=CC=C1 POAHJTISJZSSFK-UHFFFAOYSA-N 0.000 description 1
- 230000003750 conditioning effect Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 150000004985 diamines Chemical class 0.000 description 1
- ZBCBWPMODOFKDW-UHFFFAOYSA-N diethanolamine Chemical compound OCCNCCO ZBCBWPMODOFKDW-UHFFFAOYSA-N 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000007717 exclusion Effects 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- RRAMGCGOFNQTLD-UHFFFAOYSA-N hexamethylene diisocyanate Chemical compound O=C=NCCCCCCN=C=O RRAMGCGOFNQTLD-UHFFFAOYSA-N 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- NIMLQBUJDJZYEJ-UHFFFAOYSA-N isophorone diisocyanate Chemical compound CC1(C)CC(N=C=O)CC(C)(CN=C=O)C1 NIMLQBUJDJZYEJ-UHFFFAOYSA-N 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- YTCQFLFGFXZUSN-BAQGIRSFSA-N microline Chemical compound OC12OC3(C)COC2(O)C(C(/Cl)=C/C)=CC(=O)C21C3C2 YTCQFLFGFXZUSN-BAQGIRSFSA-N 0.000 description 1
- 239000002480 mineral oil Substances 0.000 description 1
- 235000010446 mineral oil Nutrition 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000004848 polyfunctional curative Substances 0.000 description 1
- 239000005056 polyisocyanate Substances 0.000 description 1
- 229920001228 polyisocyanate Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 229920005749 polyurethane resin Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002195 soluble material Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000012970 tertiary amine catalyst Substances 0.000 description 1
- 150000003512 tertiary amines Chemical class 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- RUELTTOHQODFPA-UHFFFAOYSA-N toluene 2,6-diisocyanate Chemical compound CC1=C(N=C=O)C=CC=C1N=C=O RUELTTOHQODFPA-UHFFFAOYSA-N 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
- 239000002759 woven fabric Substances 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/22—Lapping pads for working plane surfaces characterised by a multi-layered structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
- B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/26—Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
- B24B53/017—Devices or means for dressing, cleaning or otherwise conditioning lapping tools
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D18/00—Manufacture of grinding tools or other grinding devices, e.g. wheels, not otherwise provided for
- B24D18/0009—Manufacture of grinding tools or other grinding devices, e.g. wheels, not otherwise provided for using moulds or presses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Description
過去、所与の研磨層の研磨面に関するGSQ及びGFQ値が、効果的な研磨層を設計するための動作可能範囲を提供してきた。驚くことに、本発明は、研磨層設計の研磨層剛性とスラリー分布性能とを切り離すことにより、研磨層に関してこれまで定着していたGSQ及びGFQパラメータの型を打破するための手段を提供して、それにより、研磨層設計の範囲を、これまで得られなかった研磨性能特性のバランスへと拡大する、複合研磨層を製造する方法を提供する。
市販のポリウレタン研磨パッドを、実施例1〜3それぞれにしたがって調製されたケミカルメカニカル研磨パッド中の第一の連続不揮発性ポリマー相として使用した。特に、実施例1においては、30ミルの平均凹部深さDavg、60ミルの幅及び120ミルのピッチを有する複数の同心円状の周期性凹部を有する市販のIC1000(商標)ポリウレタン研磨パッドを第一の連続不揮発性ポリマー相として提供した。実施例2においては、30ミルの平均凹部深さDavg、35ミルの幅及び70ミルのピッチを有する複数の同心円状の凹部を有する市販のVP5000(商標)ポリウレタン研磨パッドを第一の連続不揮発性ポリマー相として提供した。実施例3においては、30ミルの平均凹部深さDavg、60ミルの幅及び120ミルのピッチを有する複数の同心円状の凹部を有する市販のVP5000(商標)ポリウレタン研磨パッドを第一の連続不揮発性ポリマー相として提供した。
市販のIC1000(商標)研磨パッド研磨層及びVP5000(商標)研磨パッド研磨層の連続気泡気孔率は<3容量%であると報告されている。実施例1〜3それぞれにおいてケミカルメカニカル研磨パッド中に形成された第二の不揮発性ポリマー相の連続気泡気孔率は>10容量%であった。
ケミカルメカニカルポリッシング除去速度実験
実施例1〜3それぞれにしたがって調製したケミカルメカニカル研磨パッドを使用して二酸化ケイ素除去速度研磨試験を実施し、実施例に記した同じX−Y溝パターンをそれぞれ有するIC1000(商標)ポリウレタン研磨パッド及びVP5000(商標)(いずれもRohm and Haas Electronic Materials CMP Inc.から市販)を使用して比較例PC1〜PC2で得られた試験と比較した。具体的に、各研磨パッドの場合の二酸化ケイ素除去速度を表3に提示する。研磨除去速度実験は、Novellus Systems, Inc.の200mmブランケットS15KTEN TEOSシートウェーハに対して実施した。Applied Materialsの200mm Mirra(登録商標)研磨機を使用した。すべての研磨実験を、8.3kPa(1.2psi)のダウンフォース、200ml/minのスラリー(Rohm and Haas Electronic Materials CMP Inc.から市販されているACuPlane(商標)5105スラリー)流量、93rpmのテーブル回転速度及び87rpmのキャリヤ回転速度で実施した。Saesol 8031Cダイアモンドパッドコンディショナ(Saesol Diamond Ind. Co., Ltd.から市販)を使用して研磨パッドをコンディショニングした。各研磨パッドを、コンディショナにより、31.1Nのダウンフォースを使用して10分間ならし運用した。さらに、研磨中、研磨パッドを、研磨パッドの中心から1.7〜9.2インチまで、31.1Nのダウンフォースを使用して毎分10スイープで、インサイチューで50%コンディショニングした。研磨の前後で、49点スパイラルスキャンを使用するKLA-Tencor FX200計測ツールを使用して、エッジ除外領域3mmで膜厚さを計測することにより、除去速度を測定した。除去速度実験それぞれを三回実施した。研磨パッドそれぞれの三重反復除去速度実験の平均除去速度を表3に提示する。
Claims (3)
- ケミカルメカニカル研磨パッド複合研磨層を形成する方法であって、
ケミカルメカニカル研磨パッド複合研磨層の第一の研磨層構成部品を提供する工程であって、
前記第一の研磨層構成部品が、研磨側、ベース面、複数の周期性凹部及び前記研磨側に対して垂直に前記ベース面から前記研磨側までで計測される平均第一の構成部品厚さT1-avgを有し、
前記第一の研磨層構成部品が第一の連続不揮発性ポリマー相を含み、
前記複数の周期性凹部が、前記研磨側に対して垂直に前記研磨側から前記ベース面に向けて計測される平均凹部深さDavgを有し、前記平均凹部深さDavgが前記平均第一の構成部品厚さT1-avg未満であり、
前記第一の連続不揮発性ポリマー相が、8〜12重量%の未反応NCO基を有する第一の連続相末端イソシアネート修飾ウレタンプレポリマーと第一の連続相硬化剤との反応生成物である工程、
(P)側ポリオール類、(P)側ポリアミン類及び(P)側アルコールアミン類の少なくとも一つを含む(P)側液状成分を提供し、(P)側は(P)側液状成分が供給される軸混合装置の液体供給ポートがある側である工程、
少なくとも一つの多官能イソシアネート類を含む(I)側液状成分を提供し、(I)側は(I)側液状成分が供給される軸混合装置の液体供給ポートがある側である工程、
加圧ガスを提供する工程、
内部円柱形チャンバを有する軸混合装置を提供する工程であって、
前記内部円柱形チャンバが、閉止端、開放端、対称軸、前記内部円柱形チャンバに通じる少なくとも一つの(P)側液体供給ポート、前記内部円柱形チャンバに通じる少なくとも一つの(I)側液体供給ポート、及び前記内部円柱形チャンバに通じる少なくとも一つの接線方向加圧ガス供給ポートを有し、
前記閉止端及び前記開放端が前記対称軸に対して垂直であり、
前記少なくとも一つの(P)側液体供給ポート及び前記少なくとも一つの(I)側液体供給ポートが、前記閉止端に近い前記内部円柱形チャンバの周囲に沿って配置され、
前記少なくとも一つの接線方向加圧ガス供給ポートが、前記閉止端から前記少なくとも一つの(P)側液体供給ポート及び前記少なくとも一つの(I)側液体供給ポートより下流で前記内部円柱形チャンバの周囲に沿って配置され、
前記(P)側液状成分が、前記少なくとも一つの(P)側液体供給ポートを介して6,895〜27,600kPaの(P)側チャージ圧で前記内部円柱形チャンバに導入され、
前記(I)側液状成分が、前記少なくとも一つの(I)側液体供給ポートを介して6,895〜27,600kPaの(I)側チャージ圧で前記内部円柱形チャンバに導入され、
前記内部円柱形チャンバへの前記(P)側液状成分と前記(I)側液状成分との合計質量流量が1〜500g/sであり、
前記(P)側液状成分、前記(I)側液状成分及び前記加圧ガスが前記内部円柱形チャンバ内で混ぜ合わされて混合物を形成し、
前記加圧ガスが、前記少なくとも一つの接線方向加圧ガス供給ポートを介して150〜1,500kPaの供給圧で前記内部円柱形チャンバに導入され、
前記内部円柱形チャンバへの加圧ガスの入口速度が、20℃及び1気圧の理想気体条件に基づいて計算して50〜600m/sである工程、
前記混合物を前記内部円柱形チャンバの前記開放端から前記第一の研磨層構成部品の前記研磨側に向けて5〜1,000m/secの速度で放出して、前記複数の周期性凹部を前記混合物で埋める工程、
前記混合物を前記複数の周期性凹部中で第二の研磨層構成部品として固化させて複合構造を形成する工程であって、前記第二の研磨層構成部品が第二の不揮発性ポリマー相である工程、及び
前記複合構造からケミカルメカニカル研磨パッド複合研磨層を得る工程であって、前記ケミカルメカニカル研磨パッド複合研磨層が、前記第一の研磨層構成部品の前記研磨側に研磨面を有し、前記研磨面が、基材を研磨するように適合されている工程、
を含む方法。 - 前記複合構造からケミカルメカニカル研磨パッド複合研磨層を得る工程は、
前記複合構造を機械加工して前記ケミカルメカニカル研磨パッド複合研磨層を得る工程であって、
前記複合構造を機械加工して得られる前記ケミカルメカニカル研磨パッド複合研磨層が、前記研磨面に対して垂直に前記ベース面から前記研磨面までで計測される平均複合研磨層厚さTP-avgを有し、
前記平均第一の構成部品厚さT1-avgが前記平均複合研磨層厚さTP-avgに等しく、
前記複数の周期性凹部を埋める前記第二の不揮発性ポリマー相の上面から前記ベース面までの高さが、前記研磨面に対して垂直に前記ベース面から前記第二の不揮発性ポリマー相の上面に向けて計測される平均高さHavgを有し、
前記平均複合研磨層厚さTP-avgと前記平均高さHavgとの差ΔSの絶対値が≦0.5μmである工程、
をさらに含む、請求項1記載の方法。 - 前記第一の研磨層構成部品を提供する工程が、
床面及び周囲壁を有する金型を提供する工程であって、前記床面及び前記周囲壁が金型キャビティを画定する工程、
8〜12重量%の未反応NCO基を有する前記第一の連続相末端イソシアネート修飾ウレタンプレポリマー、前記第一の連続相硬化剤及び任意選択で複数の中空コアポリマー材料を提供する工程、
前記第一の連続相末端イソシアネート修飾ウレタンプレポリマーと前記第一の連続相硬化剤とを混合して混合物を形成する工程、
前記混合物を前記金型キャビティに注加する工程、
前記混合物を前記第一の連続不揮発性ポリマー相のケーキへと固化させる工程、
前記ケーキからシートを得る工程、
前記シート中に前記複数の周期性凹部を形成して前記第一の研磨層構成部品を提供する工程、
をさらに含む、請求項1記載の方法。
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14/751,410 | 2015-06-26 | ||
US14/751,410 US10011002B2 (en) | 2015-06-26 | 2015-06-26 | Method of making composite polishing layer for chemical mechanical polishing pad |
US15/163,184 US10092998B2 (en) | 2015-06-26 | 2016-05-24 | Method of making composite polishing layer for chemical mechanical polishing pad |
US15/163,184 | 2016-05-24 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2017052079A JP2017052079A (ja) | 2017-03-16 |
JP6783562B2 true JP6783562B2 (ja) | 2020-11-11 |
Family
ID=57537191
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016125340A Active JP6783562B2 (ja) | 2015-06-26 | 2016-06-24 | ケミカルメカニカル研磨パッドのための複合研磨層の製造方法 |
Country Status (7)
Country | Link |
---|---|
US (1) | US10092998B2 (ja) |
JP (1) | JP6783562B2 (ja) |
KR (1) | KR102499031B1 (ja) |
CN (1) | CN107695869B (ja) |
DE (1) | DE102016007772A1 (ja) |
FR (1) | FR3037836A1 (ja) |
TW (1) | TWI719028B (ja) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10144115B2 (en) | 2015-06-26 | 2018-12-04 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Method of making polishing layer for chemical mechanical polishing pad |
US9776300B2 (en) | 2015-06-26 | 2017-10-03 | Rohm And Haas Electronic Materials Cmp Holdings Inc. | Chemical mechanical polishing pad and method of making same |
CN105171593B (zh) * | 2015-08-11 | 2017-12-26 | 湖北鼎龙控股股份有限公司 | 耐候性化学机械抛光垫 |
TWI642772B (zh) * | 2017-03-31 | 2018-12-01 | 智勝科技股份有限公司 | 研磨墊及研磨方法 |
KR102338854B1 (ko) * | 2017-08-31 | 2021-12-15 | 후베이 딩후이 마이크로일렉트로닉스 머티리얼즈 코., 엘티디 | 폴리우레탄 연마층, 연마층을 포함하는 연마 패드, 연마층의 제조 방법 및 재료 평탄화 방법 |
US10569383B2 (en) * | 2017-09-15 | 2020-02-25 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Flanged optical endpoint detection windows and CMP polishing pads containing them |
US10465097B2 (en) * | 2017-11-16 | 2019-11-05 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Aliphatic UV cured polyurethane optical endpoint detection windows with high UV transparency for CMP polishing pads |
US10464187B2 (en) * | 2017-12-01 | 2019-11-05 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | High removal rate chemical mechanical polishing pads from amine initiated polyol containing curatives |
CN111571427B (zh) * | 2020-05-22 | 2022-05-17 | 宁波江丰电子材料股份有限公司 | 一种保持环 |
JP7239049B1 (ja) | 2022-02-18 | 2023-03-14 | 東洋インキScホールディングス株式会社 | 研磨パッド用の湿気硬化型ホットメルト接着剤および研磨パッド |
CN115365922B (zh) * | 2022-10-24 | 2023-02-28 | 西安奕斯伟材料科技有限公司 | 研磨轮、研磨设备及硅片 |
Family Cites Families (38)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1916330A1 (de) | 1969-03-29 | 1970-10-08 | Richard Zippel & Co Kg Farbspr | Anlage zur Herstellung von grossen oder kompliziert geformten Formteilen aus fluessigen Mehrkomponenten-Kunststoffen |
US3705821A (en) | 1970-08-07 | 1972-12-12 | Bayer Ag | Process and apparatus for applying polyurethane foam-forming composition |
US3954544A (en) | 1974-06-20 | 1976-05-04 | Thomas Hooker | Foam applying apparatus |
DE2538437C3 (de) | 1975-08-29 | 1980-05-08 | Elastogran Maschinenbau Gmbh & Co, 8021 Strasslach | Mischvorrichtung für Mehrkomponentenkunststoffe mit Poren- oder Zellenstruktur, insbesondere Polyurethan |
US4158535A (en) | 1977-01-25 | 1979-06-19 | Olin Corporation | Generation of polyurethane foam |
US5110081A (en) * | 1990-09-26 | 1992-05-05 | Lang Jr William O | Vibration-isolating mount |
US5163584A (en) | 1990-12-18 | 1992-11-17 | Polyfoam Products, Inc. | Method and apparatus for mixing and dispensing foam with injected low pressure gas |
JP2002535843A (ja) * | 1999-01-21 | 2002-10-22 | ロデール ホールディングス インコーポレイテッド | 改良された研磨パッド、及び、これに関連する方法 |
US6315820B1 (en) | 1999-10-19 | 2001-11-13 | Ford Global Technologies, Inc. | Method of manufacturing thin metal alloy foils |
US7214757B2 (en) * | 2000-03-09 | 2007-05-08 | Eastman Kodak Company | Polyurethane elastomers and shaped articles prepared therefrom |
US6736709B1 (en) | 2000-05-27 | 2004-05-18 | Rodel Holdings, Inc. | Grooved polishing pads for chemical mechanical planarization |
US6656019B1 (en) * | 2000-06-29 | 2003-12-02 | International Business Machines Corporation | Grooved polishing pads and methods of use |
US20060022368A1 (en) * | 2002-11-18 | 2006-02-02 | Kyu-Don Lee | Method of fabricating polyurethane foam with micro pores and polishing pad therefrom |
JP3776428B2 (ja) | 2002-12-27 | 2006-05-17 | 株式会社加平 | ポリウレタン発泡体シート及びそれを用いた積層体シートの製造方法 |
US20060189269A1 (en) * | 2005-02-18 | 2006-08-24 | Roy Pradip K | Customized polishing pads for CMP and methods of fabrication and use thereof |
US20050171224A1 (en) * | 2004-02-03 | 2005-08-04 | Kulp Mary J. | Polyurethane polishing pad |
JP3872081B2 (ja) * | 2004-12-29 | 2007-01-24 | 東邦エンジニアリング株式会社 | 研磨用パッド |
DE102005058292A1 (de) | 2005-12-07 | 2007-06-14 | Hennecke Gmbh | Verfahren und Vorrichtung zur Herstellung von beschichteten Formteilen |
US8192257B2 (en) * | 2006-04-06 | 2012-06-05 | Micron Technology, Inc. | Method of manufacture of constant groove depth pads |
JP4954762B2 (ja) | 2007-03-27 | 2012-06-20 | 東洋ゴム工業株式会社 | ポリウレタン発泡体の製造方法 |
US20090094900A1 (en) | 2007-10-15 | 2009-04-16 | Ppg Industries Ohio, Inc. | Method of forming a polyurea polyurethane elastomer containing chemical mechanical polishing pad |
CN103534288B (zh) * | 2011-05-13 | 2015-04-08 | 马斯创新(私人)有限公司 | 一种泡沫混合料及其使用 |
US20120302148A1 (en) * | 2011-05-23 | 2012-11-29 | Rajeev Bajaj | Polishing pad with homogeneous body having discrete protrusions thereon |
CN105773400B (zh) * | 2011-11-29 | 2019-10-25 | 嘉柏微电子材料股份公司 | 具有基层和抛光表面层的抛光垫 |
US8709114B2 (en) * | 2012-03-22 | 2014-04-29 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Method of manufacturing chemical mechanical polishing layers |
US9144880B2 (en) * | 2012-11-01 | 2015-09-29 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Soft and conditionable chemical mechanical polishing pad |
US9956669B2 (en) * | 2013-03-12 | 2018-05-01 | Kyushu University, National University Corporation | Polishing pad and polishing method |
JP2016518746A (ja) | 2013-03-14 | 2016-06-23 | ゼットティーイー ウィストロン テレコム エービー | 分散型ネットワークトポロジにおけるharqプロセスの数を適応させる方法および装置 |
US9233451B2 (en) * | 2013-05-31 | 2016-01-12 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Soft and conditionable chemical mechanical polishing pad stack |
JP6184856B2 (ja) * | 2013-12-16 | 2017-08-23 | 株式会社クラレ | 研磨パッドの製造方法および該研磨パッドを用いる研磨方法 |
US10144115B2 (en) | 2015-06-26 | 2018-12-04 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Method of making polishing layer for chemical mechanical polishing pad |
US10105825B2 (en) | 2015-06-26 | 2018-10-23 | Rohm and Haas Electronics Materials CMP Holdings, Inc. | Method of making polishing layer for chemical mechanical polishing pad |
US9457449B1 (en) | 2015-06-26 | 2016-10-04 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing pad with composite polishing layer |
US9776300B2 (en) | 2015-06-26 | 2017-10-03 | Rohm And Haas Electronic Materials Cmp Holdings Inc. | Chemical mechanical polishing pad and method of making same |
US9539694B1 (en) | 2015-06-26 | 2017-01-10 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Composite polishing layer chemical mechanical polishing pad |
US9630293B2 (en) | 2015-06-26 | 2017-04-25 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing pad composite polishing layer formulation |
US9586305B2 (en) | 2015-06-26 | 2017-03-07 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing pad and method of making same |
US10005172B2 (en) | 2015-06-26 | 2018-06-26 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Controlled-porosity method for forming polishing pad |
-
2016
- 2016-05-24 US US15/163,184 patent/US10092998B2/en active Active
- 2016-06-13 TW TW105118463A patent/TWI719028B/zh active
- 2016-06-23 KR KR1020160078730A patent/KR102499031B1/ko active IP Right Grant
- 2016-06-23 CN CN201610462790.4A patent/CN107695869B/zh active Active
- 2016-06-24 JP JP2016125340A patent/JP6783562B2/ja active Active
- 2016-06-24 DE DE102016007772.7A patent/DE102016007772A1/de not_active Withdrawn
- 2016-06-27 FR FR1655968A patent/FR3037836A1/fr active Pending
Also Published As
Publication number | Publication date |
---|---|
CN107695869B (zh) | 2019-06-21 |
TWI719028B (zh) | 2021-02-21 |
CN107695869A (zh) | 2018-02-16 |
DE102016007772A1 (de) | 2016-12-29 |
JP2017052079A (ja) | 2017-03-16 |
FR3037836A1 (ja) | 2016-12-30 |
KR20170001627A (ko) | 2017-01-04 |
US10092998B2 (en) | 2018-10-09 |
TW201700556A (zh) | 2017-01-01 |
KR102499031B1 (ko) | 2023-02-14 |
US20160375554A1 (en) | 2016-12-29 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6783562B2 (ja) | ケミカルメカニカル研磨パッドのための複合研磨層の製造方法 | |
JP6177665B2 (ja) | 軟質かつコンディショニング可能なケミカルメカニカル研磨パッド | |
TWI574784B (zh) | 軟且可修整化學機械窗硏磨墊 | |
KR102513538B1 (ko) | 화학적 기계적 연마 패드 복합체 연마층 제형 | |
TWI574793B (zh) | 軟且可修整化學機械硏磨墊堆疊體 | |
JP6870927B2 (ja) | 研磨パッドを形成するための気孔率制御方法 | |
JP6783563B2 (ja) | ケミカルメカニカル研磨パッドのための研磨層の製造方法 | |
US10011002B2 (en) | Method of making composite polishing layer for chemical mechanical polishing pad | |
US20160375553A1 (en) | Method of making polishing layer for chemical mechanical polishing pad | |
US9586305B2 (en) | Chemical mechanical polishing pad and method of making same | |
KR20180134287A (ko) | 개선된 제거 속도 및 연마 균일성을 위한 오프셋 원주 홈을 갖는 화학적 기계적 연마 패드 | |
JP6870928B2 (ja) | ケミカルメカニカル研磨パッド及び同研磨パッドの製造方法 | |
JP6773465B2 (ja) | ケミカルメカニカル研磨パッド複合研磨層調合物 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20190610 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20200519 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20200602 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20200803 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20200929 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20201022 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6783562 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |