CN103802018B - 柔软可修整的化学机械抛光垫 - Google Patents

柔软可修整的化学机械抛光垫 Download PDF

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Publication number
CN103802018B
CN103802018B CN201310757251.XA CN201310757251A CN103802018B CN 103802018 B CN103802018 B CN 103802018B CN 201310757251 A CN201310757251 A CN 201310757251A CN 103802018 B CN103802018 B CN 103802018B
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CN
China
Prior art keywords
chemical mechanical
curing agent
mechanical polishing
polishing
polishing layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201310757251.XA
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English (en)
Chinese (zh)
Other versions
CN103802018A (zh
Inventor
钱百年
D·B·詹姆斯
J·穆奈恩
叶逢蓟
M·德格鲁特
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
DuPont Electronic Materials Holding Inc
Original Assignee
ROHM AND HAAS ELECTRONIC MATER
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Application filed by ROHM AND HAAS ELECTRONIC MATER filed Critical ROHM AND HAAS ELECTRONIC MATER
Publication of CN103802018A publication Critical patent/CN103802018A/zh
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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D3/00—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
    • B24D3/02—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent
    • B24D3/20—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent and being essentially organic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D3/00—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
    • B24D3/34—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents characterised by additives enhancing special physical properties, e.g. wear resistance, electric conductivity, self-cleaning properties
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G18/00—Polymeric products of isocyanates or isothiocyanates
    • C08G18/06—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen
    • C08G18/08—Processes
    • C08G18/10—Prepolymer processes involving reaction of isocyanates or isothiocyanates with compounds having active hydrogen in a first reaction step
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G18/00—Polymeric products of isocyanates or isothiocyanates
    • C08G18/06—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen
    • C08G18/28—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen characterised by the compounds used containing active hydrogen
    • C08G18/30—Low-molecular-weight compounds
    • C08G18/32—Polyhydroxy compounds; Polyamines; Hydroxyamines
    • C08G18/3271—Hydroxyamines
    • C08G18/3278—Hydroxyamines containing at least three hydroxy groups
    • C08G18/3281—Hydroxyamines containing at least three hydroxy groups containing three hydroxy groups
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Polyurethanes Or Polyureas (AREA)
  • Grinding-Machine Dressing And Accessory Apparatuses (AREA)
  • Manufacture Of Macromolecular Shaped Articles (AREA)
CN201310757251.XA 2012-11-01 2013-11-01 柔软可修整的化学机械抛光垫 Active CN103802018B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/666,514 US9144880B2 (en) 2012-11-01 2012-11-01 Soft and conditionable chemical mechanical polishing pad
US13/666,514 2012-11-01

Publications (2)

Publication Number Publication Date
CN103802018A CN103802018A (zh) 2014-05-21
CN103802018B true CN103802018B (zh) 2016-09-21

Family

ID=50483296

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201310757251.XA Active CN103802018B (zh) 2012-11-01 2013-11-01 柔软可修整的化学机械抛光垫

Country Status (7)

Country Link
US (1) US9144880B2 (enExample)
JP (1) JP6177665B2 (enExample)
KR (1) KR102117902B1 (enExample)
CN (1) CN103802018B (enExample)
DE (1) DE102013018258A1 (enExample)
FR (1) FR2997331B1 (enExample)
TW (1) TWI597355B (enExample)

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US9238295B2 (en) * 2013-05-31 2016-01-19 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Soft and conditionable chemical mechanical window polishing pad
US8980749B1 (en) * 2013-10-24 2015-03-17 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method for chemical mechanical polishing silicon wafers
US9216489B2 (en) * 2014-03-28 2015-12-22 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing pad with endpoint detection window
US20150306731A1 (en) * 2014-04-25 2015-10-29 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing pad
US9333620B2 (en) * 2014-04-29 2016-05-10 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing pad with clear endpoint detection window
US9259821B2 (en) * 2014-06-25 2016-02-16 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing layer formulation with conditioning tolerance
US20150375361A1 (en) * 2014-06-25 2015-12-31 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing method
US9586304B2 (en) * 2014-12-19 2017-03-07 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Controlled-expansion CMP PAD casting method
US10092998B2 (en) * 2015-06-26 2018-10-09 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method of making composite polishing layer for chemical mechanical polishing pad
US9776300B2 (en) * 2015-06-26 2017-10-03 Rohm And Haas Electronic Materials Cmp Holdings Inc. Chemical mechanical polishing pad and method of making same
KR102640690B1 (ko) * 2015-09-25 2024-02-23 씨엠씨 머티리얼즈 엘엘씨 높은 탄성률 비를 갖는 폴리우레탄 화학 기계적 연마 패드
US9484212B1 (en) 2015-10-30 2016-11-01 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing method
US10208154B2 (en) * 2016-11-30 2019-02-19 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Formulations for chemical mechanical polishing pads and CMP pads made therewith
US20180281149A1 (en) 2017-03-31 2018-10-04 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing pad
CN107553313B (zh) * 2017-08-31 2019-12-31 湖北鼎龙控股股份有限公司 一种抛光垫、聚氨酯抛光层及其制备方法
US11179822B2 (en) 2017-08-31 2021-11-23 Hubei Dinghui Microelectronics Materials Co., Ltd Polyurethane polishing layer, polishing pad comprising polishing layer, method for preparing polishing layer and method for planarizing material
US10464187B2 (en) 2017-12-01 2019-11-05 Rohm And Haas Electronic Materials Cmp Holdings, Inc. High removal rate chemical mechanical polishing pads from amine initiated polyol containing curatives
CN109015342B (zh) * 2018-03-06 2020-08-25 湖北鼎汇微电子材料有限公司 一种化学机械抛光垫及其平坦化基材的方法
TWI735101B (zh) * 2018-12-26 2021-08-01 南韓商Ｓｋｃ索密思股份有限公司 用於研磨墊之組成物、研磨墊及用於製備其之方法
US20210069860A1 (en) * 2019-09-11 2021-03-11 Applied Materials, Inc. Compositions and Methods of Additive Manufacturing of Polishing Pads
US12006442B2 (en) 2019-09-11 2024-06-11 Applied Materials, Inc. Additive manufacturing of polishing pads
EP3967452A1 (en) * 2020-09-07 2022-03-16 SKC Solmics Co., Ltd. Polishing pad and method of fabricating semiconductor device using the same
CN113146488B (zh) * 2021-05-18 2022-06-17 广东伟艺抛磨材料有限公司 一种水磨环保抛光轮及其制造方法
KR102561824B1 (ko) * 2021-06-02 2023-07-31 에스케이엔펄스 주식회사 연마패드 및 이를 이용한 반도체 소자의 제조방법
US20230390889A1 (en) * 2022-06-02 2023-12-07 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Cmp pad having polishing layer of low specific gravity
CN115431175B (zh) * 2022-09-16 2024-03-22 湖北鼎汇微电子材料有限公司 一种自修整抛光垫及其制备方法和应用
CN119734199A (zh) * 2024-09-13 2025-04-01 湖北鼎汇微电子材料有限公司 抛光层，抛光垫及抛光方法

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US5245790A (en) * 1992-02-14 1993-09-21 Lsi Logic Corporation Ultrasonic energy enhanced chemi-mechanical polishing of silicon wafers
CN1082567A (zh) * 1992-08-19 1994-02-23 罗德尔公司 含聚合微元成分的聚合物基材及其制作和使用方法
CN1316939A (zh) * 1998-07-10 2001-10-10 卡伯特微电子公司 半导体基材的抛光垫
CN1914241A (zh) * 2004-02-03 2007-02-14 罗门哈斯电子材料Cmp控股股份有限公司 聚氨酯抛光垫
CN101306517A (zh) * 2007-01-29 2008-11-19 罗门哈斯电子材料Cmp控股股份有限公司 化学机械抛光垫
EP2025455A2 (en) * 2007-08-15 2009-02-18 Rohm and Haas Electronic Materials CMP Holdings, Inc. Chemical mechanical polishing method
CN101583464A (zh) * 2007-01-15 2009-11-18 东洋橡胶工业株式会社 研磨垫及其制造方法
CN101642897A (zh) * 2008-08-05 2010-02-10 罗门哈斯电子材料Cmp控股股份有限公司 化学机械抛光垫
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CN101961854A (zh) * 2009-07-24 2011-02-02 罗门哈斯电子材料Cmp控股股份有限公司 多功能抛光垫

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Publication number Priority date Publication date Assignee Title
US5245790A (en) * 1992-02-14 1993-09-21 Lsi Logic Corporation Ultrasonic energy enhanced chemi-mechanical polishing of silicon wafers
CN1082567A (zh) * 1992-08-19 1994-02-23 罗德尔公司 含聚合微元成分的聚合物基材及其制作和使用方法
CN1316939A (zh) * 1998-07-10 2001-10-10 卡伯特微电子公司 半导体基材的抛光垫
CN1914241A (zh) * 2004-02-03 2007-02-14 罗门哈斯电子材料Cmp控股股份有限公司 聚氨酯抛光垫
US20080242755A1 (en) * 2004-02-03 2008-10-02 Mary Jo Kulp Polyurethane polishing pad
CN101583464A (zh) * 2007-01-15 2009-11-18 东洋橡胶工业株式会社 研磨垫及其制造方法
CN101306517A (zh) * 2007-01-29 2008-11-19 罗门哈斯电子材料Cmp控股股份有限公司 化学机械抛光垫
EP2025455A2 (en) * 2007-08-15 2009-02-18 Rohm and Haas Electronic Materials CMP Holdings, Inc. Chemical mechanical polishing method
CN101642897A (zh) * 2008-08-05 2010-02-10 罗门哈斯电子材料Cmp控股股份有限公司 化学机械抛光垫
CN101722463A (zh) * 2008-10-16 2010-06-09 罗门哈斯电子材料Cmp控股股份有限公司 具有整体识别特征的化学机械抛光垫
CN101961854A (zh) * 2009-07-24 2011-02-02 罗门哈斯电子材料Cmp控股股份有限公司 多功能抛光垫

Also Published As

Publication number Publication date
JP2014097567A (ja) 2014-05-29
US20140120809A1 (en) 2014-05-01
FR2997331B1 (fr) 2016-12-23
CN103802018A (zh) 2014-05-21
FR2997331A1 (fr) 2014-05-02
JP6177665B2 (ja) 2017-08-09
US9144880B2 (en) 2015-09-29
DE102013018258A1 (de) 2014-05-08
KR20140056116A (ko) 2014-05-09
TWI597355B (zh) 2017-09-01
KR102117902B1 (ko) 2020-06-02
TW201433628A (zh) 2014-09-01

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Address after: Delaware, USA

Patentee after: DuPont Electronic Materials Holdings Co.,Ltd.

Country or region after: U.S.A.

Address before: Delaware, USA

Patentee before: ROHM AND HAAS ELECTRONIC MATERIALS CMP HOLDINGS, Inc.

Country or region before: U.S.A.