FR2997331B1 - Patin de polissage mecano-chimique souple et pouvant etre conditionne - Google Patents

Patin de polissage mecano-chimique souple et pouvant etre conditionne

Info

Publication number
FR2997331B1
FR2997331B1 FR1360736A FR1360736A FR2997331B1 FR 2997331 B1 FR2997331 B1 FR 2997331B1 FR 1360736 A FR1360736 A FR 1360736A FR 1360736 A FR1360736 A FR 1360736A FR 2997331 B1 FR2997331 B1 FR 2997331B1
Authority
FR
France
Prior art keywords
putable
mecano
chemical polishing
polishing skin
skin flexible
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR1360736A
Other languages
English (en)
Other versions
FR2997331A1 (fr
Inventor
Bainian Qian
David B James
James Murnane
Fengji Yeh
Marty Degroot
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm and Haas Electronic Materials CMP Holdings Inc
Original Assignee
Rohm and Haas Electronic Materials CMP Holdings Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=50483296&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=FR2997331(B1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Rohm and Haas Electronic Materials CMP Holdings Inc filed Critical Rohm and Haas Electronic Materials CMP Holdings Inc
Publication of FR2997331A1 publication Critical patent/FR2997331A1/fr
Application granted granted Critical
Publication of FR2997331B1 publication Critical patent/FR2997331B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D3/00—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
    • B24D3/02—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent
    • B24D3/20—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent and being essentially organic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D3/00—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
    • B24D3/34—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents characterised by additives enhancing special physical properties, e.g. wear resistance, electric conductivity, self-cleaning properties
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G18/00—Polymeric products of isocyanates or isothiocyanates
    • C08G18/06—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen
    • C08G18/08—Processes
    • C08G18/10—Prepolymer processes involving reaction of isocyanates or isothiocyanates with compounds having active hydrogen in a first reaction step
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G18/00—Polymeric products of isocyanates or isothiocyanates
    • C08G18/06—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen
    • C08G18/28—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen characterised by the compounds used containing active hydrogen
    • C08G18/30—Low-molecular-weight compounds
    • C08G18/32—Polyhydroxy compounds; Polyamines; Hydroxyamines
    • C08G18/3271—Hydroxyamines
    • C08G18/3278—Hydroxyamines containing at least three hydroxy groups
    • C08G18/3281—Hydroxyamines containing at least three hydroxy groups containing three hydroxy groups
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Polyurethanes Or Polyureas (AREA)
  • Manufacture Of Macromolecular Shaped Articles (AREA)
  • Grinding-Machine Dressing And Accessory Apparatuses (AREA)
FR1360736A 2012-11-01 2013-10-31 Patin de polissage mecano-chimique souple et pouvant etre conditionne Active FR2997331B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US13/666,514 US9144880B2 (en) 2012-11-01 2012-11-01 Soft and conditionable chemical mechanical polishing pad

Publications (2)

Publication Number Publication Date
FR2997331A1 FR2997331A1 (fr) 2014-05-02
FR2997331B1 true FR2997331B1 (fr) 2016-12-23

Family

ID=50483296

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1360736A Active FR2997331B1 (fr) 2012-11-01 2013-10-31 Patin de polissage mecano-chimique souple et pouvant etre conditionne

Country Status (7)

Country Link
US (1) US9144880B2 (fr)
JP (1) JP6177665B2 (fr)
KR (1) KR102117902B1 (fr)
CN (1) CN103802018B (fr)
DE (1) DE102013018258A1 (fr)
FR (1) FR2997331B1 (fr)
TW (1) TWI597355B (fr)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9238295B2 (en) * 2013-05-31 2016-01-19 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Soft and conditionable chemical mechanical window polishing pad
US8980749B1 (en) * 2013-10-24 2015-03-17 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method for chemical mechanical polishing silicon wafers
US9216489B2 (en) * 2014-03-28 2015-12-22 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing pad with endpoint detection window
US20150306731A1 (en) * 2014-04-25 2015-10-29 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing pad
US9333620B2 (en) * 2014-04-29 2016-05-10 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing pad with clear endpoint detection window
US20150375361A1 (en) * 2014-06-25 2015-12-31 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing method
US9259821B2 (en) * 2014-06-25 2016-02-16 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing layer formulation with conditioning tolerance
US9586304B2 (en) * 2014-12-19 2017-03-07 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Controlled-expansion CMP PAD casting method
US10092998B2 (en) * 2015-06-26 2018-10-09 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method of making composite polishing layer for chemical mechanical polishing pad
US9776300B2 (en) * 2015-06-26 2017-10-03 Rohm And Haas Electronic Materials Cmp Holdings Inc. Chemical mechanical polishing pad and method of making same
EP3352944B1 (fr) * 2015-09-25 2022-10-26 CMC Materials, Inc. Tampons de polissage chimique-mécanique en polyuréthane ayant un rapport de module élevé
US9484212B1 (en) 2015-10-30 2016-11-01 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing method
US10208154B2 (en) * 2016-11-30 2019-02-19 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Formulations for chemical mechanical polishing pads and CMP pads made therewith
US20180281149A1 (en) 2017-03-31 2018-10-04 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing pad
WO2019042428A1 (fr) * 2017-08-31 2019-03-07 湖北鼎汇微电子材料有限公司 Couche de polissage de polyuréthane, tampon de polissage contenant une couche de polissage, procédé pour préparer une couche de polissage et procédé pour aplanir un matériau
CN107553313B (zh) * 2017-08-31 2019-12-31 湖北鼎龙控股股份有限公司 一种抛光垫、聚氨酯抛光层及其制备方法
US10464187B2 (en) 2017-12-01 2019-11-05 Rohm And Haas Electronic Materials Cmp Holdings, Inc. High removal rate chemical mechanical polishing pads from amine initiated polyol containing curatives
CN109015342B (zh) * 2018-03-06 2020-08-25 湖北鼎汇微电子材料有限公司 一种化学机械抛光垫及其平坦化基材的方法
TWI735101B (zh) * 2018-12-26 2021-08-01 南韓商Ｓｋｃ索密思股份有限公司 用於研磨墊之組成物、研磨墊及用於製備其之方法
US20210069860A1 (en) * 2019-09-11 2021-03-11 Applied Materials, Inc. Compositions and Methods of Additive Manufacturing of Polishing Pads
US12006442B2 (en) 2019-09-11 2024-06-11 Applied Materials, Inc. Additive manufacturing of polishing pads
CN114227531B (zh) * 2020-09-07 2024-04-26 Sk恩普士有限公司 抛光垫及其制备方法以及半导体器件的制备方法
CN113146488B (zh) * 2021-05-18 2022-06-17 广东伟艺抛磨材料有限公司 一种水磨环保抛光轮及其制造方法
KR102561824B1 (ko) * 2021-06-02 2023-07-31 에스케이엔펄스 주식회사 연마패드 및 이를 이용한 반도체 소자의 제조방법
CN115431175B (zh) * 2022-09-16 2024-03-22 湖北鼎汇微电子材料有限公司 一种自修整抛光垫及其制备方法和应用

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US5245790A (en) * 1992-02-14 1993-09-21 Lsi Logic Corporation Ultrasonic energy enhanced chemi-mechanical polishing of silicon wafers
MY114512A (en) 1992-08-19 2002-11-30 Rodel Inc Polymeric substrate with polymeric microelements
US6117000A (en) * 1998-07-10 2000-09-12 Cabot Corporation Polishing pad for a semiconductor substrate
JP3925041B2 (ja) 2000-05-31 2007-06-06 Ｊｓｒ株式会社 研磨パッド用組成物及びこれを用いた研磨パッド
JP3826702B2 (ja) 2000-10-24 2006-09-27 Ｊｓｒ株式会社 研磨パッド用組成物及びこれを用いた研磨パッド
CN100592474C (zh) 2001-11-13 2010-02-24 东洋橡胶工业株式会社 研磨垫及其制造方法
JP4039214B2 (ja) 2002-11-05 2008-01-30 Ｊｓｒ株式会社 研磨パッド
JP2005029617A (ja) * 2003-07-08 2005-02-03 Bridgestone Corp 難燃性微細セル軟質ポリウレタンフォーム
US7704125B2 (en) 2003-03-24 2010-04-27 Nexplanar Corporation Customized polishing pads for CMP and methods of fabrication and use thereof
US20040224622A1 (en) 2003-04-15 2004-11-11 Jsr Corporation Polishing pad and production method thereof
US6943202B2 (en) * 2003-07-29 2005-09-13 Crompton Corporation Radiation-curable polyurethane
US7074115B2 (en) 2003-10-09 2006-07-11 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Polishing pad
US20050171224A1 (en) * 2004-02-03 2005-08-04 Kulp Mary J. Polyurethane polishing pad
JP4475404B2 (ja) * 2004-10-14 2010-06-09 Ｊｓｒ株式会社 研磨パッド
CN101223016B (zh) 2005-07-15 2012-02-29 东洋橡胶工业株式会社 层叠片及其制造方法
US8167690B2 (en) 2006-09-08 2012-05-01 Toyo Tire & Rubber Co., Ltd. Polishing pad
SG177963A1 (en) * 2007-01-15 2012-02-28 Toyo Tire & Rubber Co Polishing pad and method for producing the same
JP4261586B2 (ja) * 2007-01-15 2009-04-30 東洋ゴム工業株式会社 研磨パッドの製造方法
US7569268B2 (en) * 2007-01-29 2009-08-04 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing pad
TWI444248B (zh) * 2007-08-15 2014-07-11 羅門哈斯電子材料Ｃｍｐ控股公司 化學機械研磨方法
US20090062414A1 (en) 2007-08-28 2009-03-05 David Picheng Huang System and method for producing damping polyurethane CMP pads
US8052507B2 (en) 2007-11-20 2011-11-08 Praxair Technology, Inc. Damping polyurethane CMP pads with microfillers
JP4593643B2 (ja) 2008-03-12 2010-12-08 東洋ゴム工業株式会社 研磨パッド
JP4897082B2 (ja) 2008-04-25 2012-03-14 トーヨーポリマー株式会社 ポリウレタン発泡体及び研磨パッド
US20100035529A1 (en) * 2008-08-05 2010-02-11 Mary Jo Kulp Chemical mechanical polishing pad
US8118644B2 (en) * 2008-10-16 2012-02-21 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing pad having integral identification feature
JP5393434B2 (ja) 2008-12-26 2014-01-22 東洋ゴム工業株式会社 研磨パッド及びその製造方法
JP5276502B2 (ja) * 2009-04-03 2013-08-28 東洋ゴム工業株式会社 研磨パッド及びその製造方法
US8697239B2 (en) * 2009-07-24 2014-04-15 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Multi-functional polishing pad
US8551201B2 (en) 2009-08-07 2013-10-08 Praxair S.T. Technology, Inc. Polyurethane composition for CMP pads and method of manufacturing same
US9156124B2 (en) 2010-07-08 2015-10-13 Nexplanar Corporation Soft polishing pad for polishing a semiconductor substrate

Also Published As

Publication number Publication date
KR20140056116A (ko) 2014-05-09
KR102117902B1 (ko) 2020-06-02
JP2014097567A (ja) 2014-05-29
CN103802018B (zh) 2016-09-21
TW201433628A (zh) 2014-09-01
JP6177665B2 (ja) 2017-08-09
DE102013018258A1 (de) 2014-05-08
US20140120809A1 (en) 2014-05-01
TWI597355B (zh) 2017-09-01
US9144880B2 (en) 2015-09-29
FR2997331A1 (fr) 2014-05-02
CN103802018A (zh) 2014-05-21

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