KR102117902B1 - 연질 및 컨디셔닝 가능한 화학기계 연마 패드 - Google Patents

연질 및 컨디셔닝 가능한 화학기계 연마 패드 Download PDF

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Publication number
KR102117902B1
KR102117902B1 KR1020130131973A KR20130131973A KR102117902B1 KR 102117902 B1 KR102117902 B1 KR 102117902B1 KR 1020130131973 A KR1020130131973 A KR 1020130131973A KR 20130131973 A KR20130131973 A KR 20130131973A KR 102117902 B1 KR102117902 B1 KR 102117902B1
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KR
South Korea
Prior art keywords
curing agent
polishing
weight
chemical mechanical
isocyanate
Prior art date
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Active
Application number
KR1020130131973A
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English (en)
Korean (ko)
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KR20140056116A (ko
Inventor
바이니앤 치앤
데이비드 비 제임스
제임스 머네인
펭지 예
마티 드그루트
Original Assignee
롬 앤드 하스 일렉트로닉 머티리얼스 씨엠피 홀딩스, 인코포레이티드
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First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=50483296&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=KR102117902(B1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by 롬 앤드 하스 일렉트로닉 머티리얼스 씨엠피 홀딩스, 인코포레이티드 filed Critical 롬 앤드 하스 일렉트로닉 머티리얼스 씨엠피 홀딩스, 인코포레이티드
Publication of KR20140056116A publication Critical patent/KR20140056116A/ko
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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D3/00—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
    • B24D3/02—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent
    • B24D3/20—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent and being essentially organic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D3/00—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
    • B24D3/34—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents characterised by additives enhancing special physical properties, e.g. wear resistance, electric conductivity, self-cleaning properties
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G18/00—Polymeric products of isocyanates or isothiocyanates
    • C08G18/06—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen
    • C08G18/08—Processes
    • C08G18/10—Prepolymer processes involving reaction of isocyanates or isothiocyanates with compounds having active hydrogen in a first reaction step
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G18/00—Polymeric products of isocyanates or isothiocyanates
    • C08G18/06—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen
    • C08G18/28—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen characterised by the compounds used containing active hydrogen
    • C08G18/30—Low-molecular-weight compounds
    • C08G18/32—Polyhydroxy compounds; Polyamines; Hydroxyamines
    • C08G18/3271—Hydroxyamines
    • C08G18/3278—Hydroxyamines containing at least three hydroxy groups
    • C08G18/3281—Hydroxyamines containing at least three hydroxy groups containing three hydroxy groups
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Polyurethanes Or Polyureas (AREA)
  • Grinding-Machine Dressing And Accessory Apparatuses (AREA)
  • Manufacture Of Macromolecular Shaped Articles (AREA)
KR1020130131973A 2012-11-01 2013-11-01 연질 및 컨디셔닝 가능한 화학기계 연마 패드 Active KR102117902B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/666,514 US9144880B2 (en) 2012-11-01 2012-11-01 Soft and conditionable chemical mechanical polishing pad
US13/666,514 2012-11-01

Publications (2)

Publication Number Publication Date
KR20140056116A KR20140056116A (ko) 2014-05-09
KR102117902B1 true KR102117902B1 (ko) 2020-06-02

Family

ID=50483296

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020130131973A Active KR102117902B1 (ko) 2012-11-01 2013-11-01 연질 및 컨디셔닝 가능한 화학기계 연마 패드

Country Status (7)

Country Link
US (1) US9144880B2 (enExample)
JP (1) JP6177665B2 (enExample)
KR (1) KR102117902B1 (enExample)
CN (1) CN103802018B (enExample)
DE (1) DE102013018258A1 (enExample)
FR (1) FR2997331B1 (enExample)
TW (1) TWI597355B (enExample)

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US9216489B2 (en) * 2014-03-28 2015-12-22 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing pad with endpoint detection window
US20150306731A1 (en) * 2014-04-25 2015-10-29 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing pad
US9333620B2 (en) * 2014-04-29 2016-05-10 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing pad with clear endpoint detection window
US9259821B2 (en) * 2014-06-25 2016-02-16 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing layer formulation with conditioning tolerance
US20150375361A1 (en) * 2014-06-25 2015-12-31 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing method
US9586304B2 (en) * 2014-12-19 2017-03-07 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Controlled-expansion CMP PAD casting method
US10092998B2 (en) * 2015-06-26 2018-10-09 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method of making composite polishing layer for chemical mechanical polishing pad
US9776300B2 (en) * 2015-06-26 2017-10-03 Rohm And Haas Electronic Materials Cmp Holdings Inc. Chemical mechanical polishing pad and method of making same
KR102640690B1 (ko) * 2015-09-25 2024-02-23 씨엠씨 머티리얼즈 엘엘씨 높은 탄성률 비를 갖는 폴리우레탄 화학 기계적 연마 패드
US9484212B1 (en) 2015-10-30 2016-11-01 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing method
US10208154B2 (en) * 2016-11-30 2019-02-19 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Formulations for chemical mechanical polishing pads and CMP pads made therewith
US20180281149A1 (en) 2017-03-31 2018-10-04 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing pad
CN107553313B (zh) * 2017-08-31 2019-12-31 湖北鼎龙控股股份有限公司 一种抛光垫、聚氨酯抛光层及其制备方法
US11179822B2 (en) 2017-08-31 2021-11-23 Hubei Dinghui Microelectronics Materials Co., Ltd Polyurethane polishing layer, polishing pad comprising polishing layer, method for preparing polishing layer and method for planarizing material
US10464187B2 (en) 2017-12-01 2019-11-05 Rohm And Haas Electronic Materials Cmp Holdings, Inc. High removal rate chemical mechanical polishing pads from amine initiated polyol containing curatives
CN109015342B (zh) * 2018-03-06 2020-08-25 湖北鼎汇微电子材料有限公司 一种化学机械抛光垫及其平坦化基材的方法
TWI735101B (zh) * 2018-12-26 2021-08-01 南韓商Ｓｋｃ索密思股份有限公司 用於研磨墊之組成物、研磨墊及用於製備其之方法
US20210069860A1 (en) * 2019-09-11 2021-03-11 Applied Materials, Inc. Compositions and Methods of Additive Manufacturing of Polishing Pads
US12006442B2 (en) 2019-09-11 2024-06-11 Applied Materials, Inc. Additive manufacturing of polishing pads
EP3967452A1 (en) * 2020-09-07 2022-03-16 SKC Solmics Co., Ltd. Polishing pad and method of fabricating semiconductor device using the same
CN113146488B (zh) * 2021-05-18 2022-06-17 广东伟艺抛磨材料有限公司 一种水磨环保抛光轮及其制造方法
KR102561824B1 (ko) * 2021-06-02 2023-07-31 에스케이엔펄스 주식회사 연마패드 및 이를 이용한 반도체 소자의 제조방법
US20230390889A1 (en) * 2022-06-02 2023-12-07 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Cmp pad having polishing layer of low specific gravity
CN115431175B (zh) * 2022-09-16 2024-03-22 湖北鼎汇微电子材料有限公司 一种自修整抛光垫及其制备方法和应用
CN119734199A (zh) * 2024-09-13 2025-04-01 湖北鼎汇微电子材料有限公司 抛光层，抛光垫及抛光方法

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Also Published As

Publication number Publication date
JP2014097567A (ja) 2014-05-29
US20140120809A1 (en) 2014-05-01
FR2997331B1 (fr) 2016-12-23
CN103802018A (zh) 2014-05-21
FR2997331A1 (fr) 2014-05-02
JP6177665B2 (ja) 2017-08-09
US9144880B2 (en) 2015-09-29
DE102013018258A1 (de) 2014-05-08
KR20140056116A (ko) 2014-05-09
TWI597355B (zh) 2017-09-01
TW201433628A (zh) 2014-09-01
CN103802018B (zh) 2016-09-21

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