JP2017013224A - ケミカルメカニカル研磨パッドのための研磨層の製造方法 - Google Patents
ケミカルメカニカル研磨パッドのための研磨層の製造方法 Download PDFInfo
- Publication number
- JP2017013224A JP2017013224A JP2016125341A JP2016125341A JP2017013224A JP 2017013224 A JP2017013224 A JP 2017013224A JP 2016125341 A JP2016125341 A JP 2016125341A JP 2016125341 A JP2016125341 A JP 2016125341A JP 2017013224 A JP2017013224 A JP 2017013224A
- Authority
- JP
- Japan
- Prior art keywords
- cylindrical chamber
- inner cylindrical
- supply port
- pressurized gas
- liquid component
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005498 polishing Methods 0.000 title claims abstract description 195
- 239000000126 substance Substances 0.000 title claims abstract description 71
- 238000004519 manufacturing process Methods 0.000 title abstract description 7
- 239000007788 liquid Substances 0.000 claims abstract description 150
- 238000000034 method Methods 0.000 claims abstract description 87
- 239000000758 substrate Substances 0.000 claims abstract description 16
- 238000007599 discharging Methods 0.000 claims abstract description 4
- 229920005862 polyol Polymers 0.000 claims description 68
- 150000003077 polyols Chemical class 0.000 claims description 66
- 239000007789 gas Substances 0.000 claims description 65
- 239000000203 mixture Substances 0.000 claims description 37
- 239000012948 isocyanate Substances 0.000 claims description 22
- -1 alcohol amines Chemical class 0.000 claims description 21
- 150000002513 isocyanates Chemical class 0.000 claims description 21
- 239000004065 semiconductor Substances 0.000 claims description 9
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 8
- 229920000768 polyamine Polymers 0.000 claims description 6
- 239000004721 Polyphenylene oxide Substances 0.000 claims description 5
- 229920000570 polyether Polymers 0.000 claims description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 4
- 239000012298 atmosphere Substances 0.000 claims description 3
- 229910052786 argon Inorganic materials 0.000 claims description 2
- IQPQWNKOIGAROB-UHFFFAOYSA-N isocyanate group Chemical group [N-]=C=O IQPQWNKOIGAROB-UHFFFAOYSA-N 0.000 claims description 2
- 235000012431 wafers Nutrition 0.000 description 18
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 17
- 150000001412 amines Chemical class 0.000 description 16
- 150000003673 urethanes Chemical group 0.000 description 14
- UPMLOUAZCHDJJD-UHFFFAOYSA-N 4,4'-Diphenylmethane Diisocyanate Chemical compound C1=CC(N=C=O)=CC=C1CC1=CC=C(N=C=O)C=C1 UPMLOUAZCHDJJD-UHFFFAOYSA-N 0.000 description 11
- 239000000463 material Substances 0.000 description 9
- 229920000909 polytetrahydrofuran Polymers 0.000 description 8
- 239000000853 adhesive Substances 0.000 description 7
- 230000001070 adhesive effect Effects 0.000 description 7
- 239000003570 air Substances 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 239000003054 catalyst Substances 0.000 description 6
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 6
- 229910052757 nitrogen Inorganic materials 0.000 description 6
- YPFDHNVEDLHUCE-UHFFFAOYSA-N propane-1,3-diol Chemical compound OCCCO YPFDHNVEDLHUCE-UHFFFAOYSA-N 0.000 description 6
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 238000013461 design Methods 0.000 description 5
- 150000002009 diols Chemical class 0.000 description 5
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 5
- 239000011344 liquid material Substances 0.000 description 5
- 230000002093 peripheral effect Effects 0.000 description 5
- 239000004094 surface-active agent Substances 0.000 description 5
- PUPZLCDOIYMWBV-UHFFFAOYSA-N (+/-)-1,3-Butanediol Chemical compound CC(O)CCO PUPZLCDOIYMWBV-UHFFFAOYSA-N 0.000 description 4
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 4
- 239000004831 Hot glue Substances 0.000 description 4
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 4
- 238000004891 communication Methods 0.000 description 4
- 229920001577 copolymer Polymers 0.000 description 4
- 125000005442 diisocyanate group Chemical group 0.000 description 4
- 238000002474 experimental method Methods 0.000 description 4
- 229920001610 polycaprolactone Polymers 0.000 description 4
- 239000004632 polycaprolactone Substances 0.000 description 4
- 229920002635 polyurethane Polymers 0.000 description 4
- WERYXYBDKMZEQL-UHFFFAOYSA-N butane-1,4-diol Chemical compound OCCCCO WERYXYBDKMZEQL-UHFFFAOYSA-N 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 238000005187 foaming Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 239000002002 slurry Substances 0.000 description 3
- 239000012974 tin catalyst Substances 0.000 description 3
- DVKJHBMWWAPEIU-UHFFFAOYSA-N toluene 2,4-diisocyanate Chemical compound CC1=CC=C(N=C=O)C=C1N=C=O DVKJHBMWWAPEIU-UHFFFAOYSA-N 0.000 description 3
- PAALZGOZEUHCET-UHFFFAOYSA-N 1,4-dioxecane-5,10-dione Chemical compound O=C1CCCCC(=O)OCCO1 PAALZGOZEUHCET-UHFFFAOYSA-N 0.000 description 2
- AXKZIDYFAMKWSA-UHFFFAOYSA-N 1,6-dioxacyclododecane-7,12-dione Chemical compound O=C1CCCCC(=O)OCCCCO1 AXKZIDYFAMKWSA-UHFFFAOYSA-N 0.000 description 2
- LCZVSXRMYJUNFX-UHFFFAOYSA-N 2-[2-(2-hydroxypropoxy)propoxy]propan-1-ol Chemical compound CC(O)COC(C)COC(C)CO LCZVSXRMYJUNFX-UHFFFAOYSA-N 0.000 description 2
- QWGRWMMWNDWRQN-UHFFFAOYSA-N 2-methylpropane-1,3-diol Chemical compound OCC(C)CO QWGRWMMWNDWRQN-UHFFFAOYSA-N 0.000 description 2
- SXFJDZNJHVPHPH-UHFFFAOYSA-N 3-methylpentane-1,5-diol Chemical compound OCCC(C)CCO SXFJDZNJHVPHPH-UHFFFAOYSA-N 0.000 description 2
- ALYNCZNDIQEVRV-UHFFFAOYSA-N 4-aminobenzoic acid Chemical compound NC1=CC=C(C(O)=O)C=C1 ALYNCZNDIQEVRV-UHFFFAOYSA-N 0.000 description 2
- 239000004604 Blowing Agent Substances 0.000 description 2
- ALQSHHUCVQOPAS-UHFFFAOYSA-N Pentane-1,5-diol Chemical compound OCCCCCO ALQSHHUCVQOPAS-UHFFFAOYSA-N 0.000 description 2
- 229920002176 Pluracol® Polymers 0.000 description 2
- 239000004743 Polypropylene Substances 0.000 description 2
- 239000004820 Pressure-sensitive adhesive Substances 0.000 description 2
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 description 2
- 229920013701 VORANOL™ Polymers 0.000 description 2
- BMRWNKZVCUKKSR-UHFFFAOYSA-N butane-1,2-diol Chemical compound CCC(O)CO BMRWNKZVCUKKSR-UHFFFAOYSA-N 0.000 description 2
- 229910002092 carbon dioxide Inorganic materials 0.000 description 2
- 239000001569 carbon dioxide Substances 0.000 description 2
- 238000005266 casting Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000001143 conditioned effect Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- SZXQTJUDPRGNJN-UHFFFAOYSA-N dipropylene glycol Chemical compound OCCCOCCCO SZXQTJUDPRGNJN-UHFFFAOYSA-N 0.000 description 2
- 239000012776 electronic material Substances 0.000 description 2
- 150000002148 esters Chemical class 0.000 description 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N ether Substances CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- XXMIOPMDWAUFGU-UHFFFAOYSA-N hexane-1,6-diol Chemical compound OCCCCCCO XXMIOPMDWAUFGU-UHFFFAOYSA-N 0.000 description 2
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 230000001788 irregular Effects 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- SLCVBVWXLSEKPL-UHFFFAOYSA-N neopentyl glycol Chemical compound OCC(C)(C)CO SLCVBVWXLSEKPL-UHFFFAOYSA-N 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 229920000515 polycarbonate Polymers 0.000 description 2
- 239000004417 polycarbonate Substances 0.000 description 2
- 229920005906 polyester polyol Polymers 0.000 description 2
- 229920001155 polypropylene Polymers 0.000 description 2
- 229920001451 polypropylene glycol Polymers 0.000 description 2
- 239000004814 polyurethane Substances 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 238000007655 standard test method Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- IMNIMPAHZVJRPE-UHFFFAOYSA-N triethylenediamine Chemical compound C1CN2CCN1CC2 IMNIMPAHZVJRPE-UHFFFAOYSA-N 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- ALQLPWJFHRMHIU-UHFFFAOYSA-N 1,4-diisocyanatobenzene Chemical compound O=C=NC1=CC=C(N=C=O)C=C1 ALQLPWJFHRMHIU-UHFFFAOYSA-N 0.000 description 1
- SBJCUZQNHOLYMD-UHFFFAOYSA-N 1,5-Naphthalene diisocyanate Chemical compound C1=CC=C2C(N=C=O)=CC=CC2=C1N=C=O SBJCUZQNHOLYMD-UHFFFAOYSA-N 0.000 description 1
- CWKVFRNCODQPDB-UHFFFAOYSA-N 1-(2-aminoethylamino)propan-2-ol Chemical compound CC(O)CNCCN CWKVFRNCODQPDB-UHFFFAOYSA-N 0.000 description 1
- VOZKAJLKRJDJLL-UHFFFAOYSA-N 2,4-diaminotoluene Chemical compound CC1=CC=C(N)C=C1N VOZKAJLKRJDJLL-UHFFFAOYSA-N 0.000 description 1
- PISLZQACAJMAIO-UHFFFAOYSA-N 2,4-diethyl-6-methylbenzene-1,3-diamine Chemical compound CCC1=CC(C)=C(N)C(CC)=C1N PISLZQACAJMAIO-UHFFFAOYSA-N 0.000 description 1
- BSYVFGQQLJNJJG-UHFFFAOYSA-N 2-[2-(2-aminophenyl)sulfanylethylsulfanyl]aniline Chemical compound NC1=CC=CC=C1SCCSC1=CC=CC=C1N BSYVFGQQLJNJJG-UHFFFAOYSA-N 0.000 description 1
- WABOBVQONKAELR-UHFFFAOYSA-N 2-methyl-4-(2-methylbutan-2-yl)benzene-1,3-diamine Chemical compound CCC(C)(C)C1=CC=C(N)C(C)=C1N WABOBVQONKAELR-UHFFFAOYSA-N 0.000 description 1
- YBRVSVVVWCFQMG-UHFFFAOYSA-N 4,4'-diaminodiphenylmethane Chemical compound C1=CC(N)=CC=C1CC1=CC=C(N)C=C1 YBRVSVVVWCFQMG-UHFFFAOYSA-N 0.000 description 1
- VIOMIGLBMQVNLY-UHFFFAOYSA-N 4-[(4-amino-2-chloro-3,5-diethylphenyl)methyl]-3-chloro-2,6-diethylaniline Chemical compound CCC1=C(N)C(CC)=CC(CC=2C(=C(CC)C(N)=C(CC)C=2)Cl)=C1Cl VIOMIGLBMQVNLY-UHFFFAOYSA-N 0.000 description 1
- AOFIWCXMXPVSAZ-UHFFFAOYSA-N 4-methyl-2,6-bis(methylsulfanyl)benzene-1,3-diamine Chemical compound CSC1=CC(C)=C(N)C(SC)=C1N AOFIWCXMXPVSAZ-UHFFFAOYSA-N 0.000 description 1
- YJIHNAUJGMTCFJ-UHFFFAOYSA-N 4-methyl-6-(2-methylbutan-2-yl)benzene-1,3-diamine Chemical compound CCC(C)(C)C1=CC(C)=C(N)C=C1N YJIHNAUJGMTCFJ-UHFFFAOYSA-N 0.000 description 1
- DVPHIKHMYFQLKF-UHFFFAOYSA-N 4-tert-butyl-2-methylbenzene-1,3-diamine Chemical compound CC1=C(N)C=CC(C(C)(C)C)=C1N DVPHIKHMYFQLKF-UHFFFAOYSA-N 0.000 description 1
- KXDHJXZQYSOELW-UHFFFAOYSA-M Carbamate Chemical compound NC([O-])=O KXDHJXZQYSOELW-UHFFFAOYSA-M 0.000 description 1
- 239000004821 Contact adhesive Substances 0.000 description 1
- 239000005057 Hexamethylene diisocyanate Substances 0.000 description 1
- 239000005058 Isophorone diisocyanate Substances 0.000 description 1
- OMRDSWJXRLDPBB-UHFFFAOYSA-N N=C=O.N=C=O.C1CCCCC1 Chemical compound N=C=O.N=C=O.C1CCCCC1 OMRDSWJXRLDPBB-UHFFFAOYSA-N 0.000 description 1
- 229920005830 Polyurethane Foam Polymers 0.000 description 1
- 241000350481 Pterogyne nitens Species 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 1
- NSOXQYCFHDMMGV-UHFFFAOYSA-N Tetrakis(2-hydroxypropyl)ethylenediamine Chemical compound CC(O)CN(CC(C)O)CCN(CC(C)O)CC(C)O NSOXQYCFHDMMGV-UHFFFAOYSA-N 0.000 description 1
- SLINHMUFWFWBMU-UHFFFAOYSA-N Triisopropanolamine Chemical compound CC(O)CN(CC(C)O)CC(C)O SLINHMUFWFWBMU-UHFFFAOYSA-N 0.000 description 1
- 239000012190 activator Substances 0.000 description 1
- 125000001931 aliphatic group Chemical group 0.000 description 1
- 150000004982 aromatic amines Chemical class 0.000 description 1
- 150000004984 aromatic diamines Chemical class 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- CDQSJQSWAWPGKG-UHFFFAOYSA-N butane-1,1-diol Chemical compound CCCC(O)O CDQSJQSWAWPGKG-UHFFFAOYSA-N 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- POAHJTISJZSSFK-UHFFFAOYSA-N chloro(phenyl)methanediamine Chemical compound NC(N)(Cl)C1=CC=CC=C1 POAHJTISJZSSFK-UHFFFAOYSA-N 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 150000004985 diamines Chemical class 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000007717 exclusion Effects 0.000 description 1
- 238000001879 gelation Methods 0.000 description 1
- RRAMGCGOFNQTLD-UHFFFAOYSA-N hexamethylene diisocyanate Chemical compound O=C=NCCCCCCN=C=O RRAMGCGOFNQTLD-UHFFFAOYSA-N 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- NIMLQBUJDJZYEJ-UHFFFAOYSA-N isophorone diisocyanate Chemical compound CC1(C)CC(N=C=O)CC(C)(CN=C=O)C1 NIMLQBUJDJZYEJ-UHFFFAOYSA-N 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- YTCQFLFGFXZUSN-BAQGIRSFSA-N microline Chemical compound OC12OC3(C)COC2(O)C(C(/Cl)=C/C)=CC(=O)C21C3C2 YTCQFLFGFXZUSN-BAQGIRSFSA-N 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 239000011496 polyurethane foam Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000012970 tertiary amine catalyst Substances 0.000 description 1
- 150000003512 tertiary amines Chemical class 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- RUELTTOHQODFPA-UHFFFAOYSA-N toluene 2,6-diisocyanate Chemical compound CC1=C(N=C=O)C=CC=C1N=C=O RUELTTOHQODFPA-UHFFFAOYSA-N 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
- 125000006839 xylylene group Chemical group 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D18/00—Manufacture of grinding tools or other grinding devices, e.g. wheels, not otherwise provided for
- B24D18/0009—Manufacture of grinding tools or other grinding devices, e.g. wheels, not otherwise provided for using moulds or presses
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D18/00—Manufacture of grinding tools or other grinding devices, e.g. wheels, not otherwise provided for
- B24D18/009—Tools not otherwise provided for
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/26—Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D3/00—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
- B24D3/02—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent
- B24D3/20—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent and being essentially organic
- B24D3/22—Rubbers synthetic or natural
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D3/00—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
- B24D3/02—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent
- B24D3/20—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent and being essentially organic
- B24D3/28—Resins or natural or synthetic macromolecular compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
- H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
- H01L21/461—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Polyurethanes Or Polyureas (AREA)
Abstract
Description
ケミカルメカニカル研磨層を形成するための様々な従来法、たとえば流込み成形法(すなわち、複数の研磨層へと薄くはがれるケーキを形成する)及び発泡法は、処理を促進するために十分に長いゲル化時間を要する。発泡法及び流込み成形法は、形成された研磨層の表面に最終的な溝パターンを機械加工することを要する。本発明の方法は、研磨層の研磨面に形成される溝パターンの質を大きく改善し、多くの従来の研磨層製造法によって求められるような、完成した研磨層に溝パターンを機械加工する必要性を除く。本発明の方法はまた、従来技術に固有の制約(すなわちゲル化時間の制約)を考慮すると、従来の研磨層製造法に適当であろう組成範囲よりも広い組成範囲を可能にする。
高分子量ポリエーテルポリオール(The Dow Chemical Companyから市販されているVoralux(登録商標)HF505ポリオール)77.62重量%、モノエチレングリコール21.0重量%、シリコーン界面活性剤(Evonikから市販されているTegostab(登録商標)B8418界面活性剤)1.23重量%、スズ触媒(Momentiveから市販されているFomrez(登録商標)UL-28)0.05重量%及び第三級アミン触媒(Air Products, Inc.から市販されているDabco(登録商標)33LV触媒)0.10重量%を含有するポリ側(P)液状成分を準備した。改質ジフェニルメタンジイソシアネート(The Dow Chemical Companyから市販されているIsonate(商標)181MDIプレポリマー)100重量%を含有するイソ側(I)液状成分を準備した。加圧ガス(乾燥空気)を準備した。
Claims (10)
- ケミカルメカニカル研磨パッド研磨層を形成する方法であって、
ベースを有する金型を提供する工程であって、前記ベースが、その中に形成された溝パターンのネガを有する、工程、
(P)側ポリオール類、(P)側ポリアミン類及び(P)側アルコールアミン類の少なくとも一つを含むポリ側(P)液状成分を提供する工程、
少なくとも一つの多官能イソシアネート類を含むイソ側(I)液状成分を提供する工程、
加圧ガスを提供する工程、
内部円柱形チャンバを有する軸混合装置を提供する工程であって、
前記内部円柱形チャンバが、閉止端、開放端、対称軸、前記内部円柱形チャンバに通じる少なくとも一つの(P)側液体供給ポート、前記内部円柱形チャンバに通じる少なくとも一つの(I)側液体供給ポート、及び前記内部円柱形チャンバに通じる少なくとも一つの接線方向加圧ガス供給ポートを有し、
前記閉止端及び前記開放端が前記対称軸に対して垂直であり、
前記少なくとも一つの(P)側液体供給ポート及び前記少なくとも一つの(I)側液体供給ポートが、前記閉止端に近い前記内部円柱形チャンバの周囲に沿って配置され、
前記少なくとも一つの接線方向加圧ガス供給ポートが、前記閉止端から前記少なくとも一つの(P)側液体供給ポート及び前記少なくとも一つの(I)側液体供給ポートより下流で前記内部円柱形チャンバの周囲に沿って配置され、
前記ポリ側(P)液状成分が、前記少なくとも一つの(P)側液体供給ポートを介して6,895〜27,600kPaの(P)側チャージ圧で前記内部円柱形チャンバに導入され、
前記イソ側(I)液状成分が、前記少なくとも一つの(I)側液体供給ポートを介して6,895〜27,600kPaの(I)側チャージ圧で前記内部円柱形チャンバに導入され、
前記内部円柱形チャンバへの前記ポリ側(P)液状成分と前記イソ側(I)液状成分との合計質量流量が1〜500g/sであり、
前記ポリ側(P)液状成分、前記イソ側(I)液状成分及び前記加圧ガスが前記内部円柱形チャンバ内で混ぜ合わされて混合物を形成し、
前記加圧ガスが、前記少なくとも一つの接線方向加圧ガス供給ポートを介して150〜1,500kPaの供給圧で前記内部円柱形チャンバに導入され、
前記内部円柱形チャンバへの前記加圧ガスの入口速度が、20℃及び1気圧の理想気体条件に基づいて計算して50〜600m/sである、工程、
前記混合物を前記内部円柱形チャンバの前記開放端から前記ベースに向けて5〜1,000m/secの速度で放出する工程、
前記混合物をケーキへと固化させる工程、
前記ケーキを前記金型から分離させる工程、及び
前記ケーキからケミカルメカニカル研磨パッド研磨層を得る工程であって、前記ケミカルメカニカル研磨パッド研磨層が研磨面を有し、前記研磨面に溝パターンが形成されており、前記研磨面が、基材を研磨するように適合されている、工程
を含む方法。 - 前記ポリ側(P)液状成分が(P)側ポリオール類25〜95重量%を含み、前記(P)側ポリオール類が高分子量ポリエーテルポリオール類であり、前記高分子量ポリエーテルポリオール類が、2,500〜100,000の数平均分子量MNを有し、1分子あたり平均4〜8個のヒドロキシル基を有する、請求項1記載の方法。
- 前記イソ側(I)液状成分が、1分子あたり平均2個の反応性イソシアネート基を有する多官能イソシアネート類を含む、請求項1記載の方法。
- 前記加圧ガスが、CO2、N2、空気及びアルゴンからなる群から選択される、請求項1記載の方法。
- 前記加圧ガスが≦10ppmの水分含量を有する、請求項4記載の方法。
- 前記内部円柱形チャンバが、前記内部円柱形チャンバの前記対称軸に対して垂直な平面に円形の断面を有する、請求項1記載の方法。
- 前記内部円柱形チャンバの前記開放端が、前記内部円柱形チャンバの前記対称軸に対して垂直な円形の開口を有し、前記円形の開口が前記円形の断面と同心である、請求項6記載の方法。
- 前記円形の開口が2.5〜6mmの内径を有する、請求項7記載の方法。
- 前記円形の開口が3mmの内径を有する、請求項7記載の方法。
- 前記研磨面が、半導体ウェーハを研磨するように適合されている、請求項1記載の方法。
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14/751,423 US10105825B2 (en) | 2015-06-26 | 2015-06-26 | Method of making polishing layer for chemical mechanical polishing pad |
US14/751,423 | 2015-06-26 | ||
US15/163,213 US10144115B2 (en) | 2015-06-26 | 2016-05-24 | Method of making polishing layer for chemical mechanical polishing pad |
US15/163,213 | 2016-05-24 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2017013224A true JP2017013224A (ja) | 2017-01-19 |
JP6783563B2 JP6783563B2 (ja) | 2020-11-11 |
Family
ID=57537134
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016125341A Active JP6783563B2 (ja) | 2015-06-26 | 2016-06-24 | ケミカルメカニカル研磨パッドのための研磨層の製造方法 |
Country Status (7)
Country | Link |
---|---|
US (1) | US10144115B2 (ja) |
JP (1) | JP6783563B2 (ja) |
KR (1) | KR102548640B1 (ja) |
CN (1) | CN107695904A (ja) |
DE (1) | DE102016007771A1 (ja) |
FR (1) | FR3037837B1 (ja) |
TW (1) | TWI705992B (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9776300B2 (en) | 2015-06-26 | 2017-10-03 | Rohm And Haas Electronic Materials Cmp Holdings Inc. | Chemical mechanical polishing pad and method of making same |
US10092998B2 (en) | 2015-06-26 | 2018-10-09 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Method of making composite polishing layer for chemical mechanical polishing pad |
TWI642516B (zh) * | 2017-10-02 | 2018-12-01 | 智勝科技股份有限公司 | 研磨墊以及研磨方法 |
KR102293781B1 (ko) * | 2019-11-11 | 2021-08-25 | 에스케이씨솔믹스 주식회사 | 연마패드, 이의 제조방법 및 이를 이용한 반도체 소자의 제조방법 |
US11772230B2 (en) * | 2021-01-21 | 2023-10-03 | Rohm And Haas Electronic Materials Cmp Holdings Inc. | Formulations for high porosity chemical mechanical polishing pads with high hardness and CMP pads made therewith |
Family Cites Families (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1916330A1 (de) | 1969-03-29 | 1970-10-08 | Richard Zippel & Co Kg Farbspr | Anlage zur Herstellung von grossen oder kompliziert geformten Formteilen aus fluessigen Mehrkomponenten-Kunststoffen |
US3705821A (en) | 1970-08-07 | 1972-12-12 | Bayer Ag | Process and apparatus for applying polyurethane foam-forming composition |
US3954544A (en) | 1974-06-20 | 1976-05-04 | Thomas Hooker | Foam applying apparatus |
DE2538437C3 (de) | 1975-08-29 | 1980-05-08 | Elastogran Maschinenbau Gmbh & Co, 8021 Strasslach | Mischvorrichtung für Mehrkomponentenkunststoffe mit Poren- oder Zellenstruktur, insbesondere Polyurethan |
US4158535A (en) | 1977-01-25 | 1979-06-19 | Olin Corporation | Generation of polyurethane foam |
US5110081A (en) * | 1990-09-26 | 1992-05-05 | Lang Jr William O | Vibration-isolating mount |
US5163584A (en) | 1990-12-18 | 1992-11-17 | Polyfoam Products, Inc. | Method and apparatus for mixing and dispensing foam with injected low pressure gas |
US6315820B1 (en) | 1999-10-19 | 2001-11-13 | Ford Global Technologies, Inc. | Method of manufacturing thin metal alloy foils |
US7214757B2 (en) * | 2000-03-09 | 2007-05-08 | Eastman Kodak Company | Polyurethane elastomers and shaped articles prepared therefrom |
JP4313761B2 (ja) * | 2002-11-18 | 2009-08-12 | ドン ソン エイ アンド ティ カンパニー リミテッド | 微細気孔が含まれたポリウレタン発泡体の製造方法及びそれから製造された研磨パッド |
JP3776428B2 (ja) | 2002-12-27 | 2006-05-17 | 株式会社加平 | ポリウレタン発泡体シート及びそれを用いた積層体シートの製造方法 |
US20060089095A1 (en) * | 2004-10-27 | 2006-04-27 | Swisher Robert G | Polyurethane urea polishing pad |
DE102005058292A1 (de) | 2005-12-07 | 2007-06-14 | Hennecke Gmbh | Verfahren und Vorrichtung zur Herstellung von beschichteten Formteilen |
JP4954762B2 (ja) | 2007-03-27 | 2012-06-20 | 東洋ゴム工業株式会社 | ポリウレタン発泡体の製造方法 |
US20090094900A1 (en) | 2007-10-15 | 2009-04-16 | Ppg Industries Ohio, Inc. | Method of forming a polyurea polyurethane elastomer containing chemical mechanical polishing pad |
US9156124B2 (en) * | 2010-07-08 | 2015-10-13 | Nexplanar Corporation | Soft polishing pad for polishing a semiconductor substrate |
SG11201402224WA (en) * | 2011-11-29 | 2014-09-26 | Nexplanar Corp | Polishing pad with foundation layer and polishing surface layer |
US20160037552A1 (en) | 2013-03-14 | 2016-02-04 | Zte Wistron Telecom Ab | Method and apparatus to adapt the number of harq processes in a distributed network topology |
US9238295B2 (en) * | 2013-05-31 | 2016-01-19 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Soft and conditionable chemical mechanical window polishing pad |
US9539694B1 (en) | 2015-06-26 | 2017-01-10 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Composite polishing layer chemical mechanical polishing pad |
US10092998B2 (en) | 2015-06-26 | 2018-10-09 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Method of making composite polishing layer for chemical mechanical polishing pad |
US9457449B1 (en) | 2015-06-26 | 2016-10-04 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing pad with composite polishing layer |
US10105825B2 (en) | 2015-06-26 | 2018-10-23 | Rohm and Haas Electronics Materials CMP Holdings, Inc. | Method of making polishing layer for chemical mechanical polishing pad |
US9776300B2 (en) | 2015-06-26 | 2017-10-03 | Rohm And Haas Electronic Materials Cmp Holdings Inc. | Chemical mechanical polishing pad and method of making same |
US9630293B2 (en) | 2015-06-26 | 2017-04-25 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing pad composite polishing layer formulation |
US9586305B2 (en) | 2015-06-26 | 2017-03-07 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing pad and method of making same |
US10005172B2 (en) | 2015-06-26 | 2018-06-26 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Controlled-porosity method for forming polishing pad |
-
2016
- 2016-05-24 US US15/163,213 patent/US10144115B2/en active Active
- 2016-06-13 TW TW105118464A patent/TWI705992B/zh active
- 2016-06-23 KR KR1020160078654A patent/KR102548640B1/ko active IP Right Grant
- 2016-06-23 CN CN201610465720.4A patent/CN107695904A/zh active Pending
- 2016-06-24 DE DE102016007771.9A patent/DE102016007771A1/de not_active Withdrawn
- 2016-06-24 JP JP2016125341A patent/JP6783563B2/ja active Active
- 2016-06-27 FR FR1655970A patent/FR3037837B1/fr not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
TWI705992B (zh) | 2020-10-01 |
US10144115B2 (en) | 2018-12-04 |
DE102016007771A1 (de) | 2016-12-29 |
FR3037837A1 (ja) | 2016-12-30 |
JP6783563B2 (ja) | 2020-11-11 |
US20160375555A1 (en) | 2016-12-29 |
CN107695904A (zh) | 2018-02-16 |
FR3037837B1 (fr) | 2020-05-22 |
TW201700557A (zh) | 2017-01-01 |
KR102548640B1 (ko) | 2023-06-28 |
KR20170001625A (ko) | 2017-01-04 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6177665B2 (ja) | 軟質かつコンディショニング可能なケミカルメカニカル研磨パッド | |
JP6463618B2 (ja) | シリコンウェーハを化学機械研磨する方法 | |
JP6783562B2 (ja) | ケミカルメカニカル研磨パッドのための複合研磨層の製造方法 | |
JP6870927B2 (ja) | 研磨パッドを形成するための気孔率制御方法 | |
JP6783563B2 (ja) | ケミカルメカニカル研磨パッドのための研磨層の製造方法 | |
US10105825B2 (en) | Method of making polishing layer for chemical mechanical polishing pad | |
US9233451B2 (en) | Soft and conditionable chemical mechanical polishing pad stack | |
US9586305B2 (en) | Chemical mechanical polishing pad and method of making same | |
US10011002B2 (en) | Method of making composite polishing layer for chemical mechanical polishing pad | |
JP7201338B2 (ja) | 改善された除去速度および研磨均一性のためのオフセット周方向溝を有するケミカルメカニカル研磨パッド | |
JP6870928B2 (ja) | ケミカルメカニカル研磨パッド及び同研磨パッドの製造方法 | |
JP2017035773A (ja) | ケミカルメカニカル研磨パッド複合研磨層調合物 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20190610 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20200529 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20200616 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20200806 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20200929 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20201022 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6783563 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |